Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

Noel Kennedy, Ray Duffy, Luke Eaton, Dan O’Connell, Scott Monaghan, Shane Garvey, James Connolly, Chris Hatem, Justin D. Holmes and Brenda Long
Beilstein J. Nanotechnol. 2018, 9, 2106–2113. https://doi.org/10.3762/bjnano.9.199

Supporting Information

Comprehensive Hall effect analysis data and ECV of annealing variation experiments on bulk silicon.

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Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates
Noel Kennedy, Ray Duffy, Luke Eaton, Dan O’Connell, Scott Monaghan, Shane Garvey, James Connolly, Chris Hatem, Justin D. Holmes and Brenda Long
Beilstein J. Nanotechnol. 2018, 9, 2106–2113. https://doi.org/10.3762/bjnano.9.199

How to Cite

Kennedy, N.; Duffy, R.; Eaton, L.; O’Connell, D.; Monaghan, S.; Garvey, S.; Connolly, J.; Hatem, C.; Holmes, J. D.; Long, B. Beilstein J. Nanotechnol. 2018, 9, 2106–2113. doi:10.3762/bjnano.9.199

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  • MacHale, J.; Meaney, F.; Sheehan, B.; Duffy, R.; Kennedy, N.; Long, B. Electrical Evaluation of Ion Implant, Liquid, and Gas Sources for Doping of Ultra-Thin Body SOI and Si Nanowire Structures. In 2018 22nd International Conference on Ion Implantation Technology (IIT), IEEE, 2018. doi:10.1109/iit.2018.8807918

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