Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating

Dirk König, Daniel Hiller, Noël Wilck, Birger Berghoff, Merlin Müller, Sangeeta Thakur, Giovanni Di Santo, Luca Petaccia, Joachim Mayer, Sean Smith and Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264. doi:10.3762/bjnano.9.210

Supporting Information

Supporting Information features the comparison of h-DFT results to experimental data, further information on the interface impact on Si nanocrystal electronic structure and its connection to quantum-chemical nature of N and O, details of UPS scans with further reference data, the derivation of charge carrier densities for nonequilibrium Green’s function (NEGF) transport simulation of undoped Si-nanowire MISFET devices and details on NEGF device simulations.

Supporting Information File 1: Further discussion and data of h-DFT, UPS, and NEGF simulations.
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Picture with graphical abstract, title and authors for social media postings and presentations.

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