1 article(s) from Bahm, Alan
Fit of the DFT data for the argon–silicon potential in (a) the 1–5 Å region, with the potential wel...
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Visualisations of the samples during equilibration steps: (a) represents the silicon sample after S...
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Representations of (a) clean and (b) contaminated samples. The silicon atoms are shown in yellow, o...
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Bond length distributions for the pristine sample (blue) and the contaminated sample (pink) regardl...
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Evolution of bond lengths in the contaminated sample under bombardment. (a) The first graph shows b...
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Evolution of the clean (a, b, c) and contaminated (d, e, f) samples under ion irradiation, before t...
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Representation of each region in the sample, the amorphous region is the one with the highest disor...
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Evolution of the μ coefficient with respect to the angle for (a) pristine and (b) contaminated samp...
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Radial distribution function for (a) clean and (b) contaminated samples for all previously determin...
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Comparison of the radial distribution function for both samples in the amorphous layer. The same cu...
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Comparison of the radial distribution function in the amorphous slab of the contaminated sample wit...
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Comparison between samples after irradiation with an incident beam at 100 eV and 85° for (a) the pr...
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Distribution of implanted contaminants, (a) oxygen, (b) hydrogen and (c) argon, with respect to the...
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Number of argon atoms retained in the sample, regardless of the depth of implantation, with respect...
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Evolution of the Si–O (a) and Si–H (b) products with respect to the fluence and the angle.
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Sputtering yields of pristine and contaminated samples with respect to the incidence angle. For the...
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Fraction of the contaminants sputtered after 500 impacts with respect to the angle. The values are ...
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Sputtering yields for (a) silicon-related and (b) oxygen-related clusters.
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Graph showing the probability to dissociate at least one water cluster per impact, with respect to ...
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Beilstein J. Nanotechnol. 2022, 13, 986–1003, doi:10.3762/bjnano.13.86
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