1 article(s) from Bunel, Catherine
sMIM setup showing the detection of the sMIM-C (ε) and sMIM-R (σ) signals. VAC and VDC are applied ...
Jump to Figure 1
Topography of the cross section of the PIN diode. The scanned area is 83 µm × 54 µm. Deep trenches ...
Jump to Figure 2
sMIM results for a 25 µm × 25 µm area at the PIN anode area (area 1 in Figure 2). (a) ∂C/∂V phase, (b) ∂C/∂V...
Jump to Figure 3
sMIM-C profiles along the central axis of the diode structure. A single line scan (blue) and the av...
Jump to Figure 4
Depth profiles (∂C/∂V phase, ∂C/∂V amplitude, sMIM-R, and sMIM-C) along the PIN structure compared ...
Jump to Figure 5
sMIM acquisitions of the bottom of the deep trench structure. (a) ∂C/∂V phase (10 µm × 10 µm), (b) ∂...
Jump to Figure 6
sMIM maps acquired at VDC = 0 V on a large area (83 µm × 54 µm) of the PIN diode device. (a) ∂C/∂V ...
Jump to Figure 7
Analytic calculations of the equivalent capacitance CNano determined for the tip–sample contact as ...
Jump to Figure 8
Force curve as a function of time during the dynamic spectroscopy sMIM measurement. 1: tip approach...
Jump to Figure 9
sMIM-C DCUBE slices (55 µm × 33 µm) obtained for various VDC values (the bias is applied to the sam...
Jump to Figure 10
Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159
Subscribe to our Latest Articles RSS Feed.
Register and get informed about new articles.
Follow the Beilstein-Institut