2 article(s) from Gonzalez, Juan C
Representative SEM images of samples grown at (a) 490 °C, (b) 530 °C, and (c) 580 °C, showing a lar...
Jump to Figure 1
(a) High-resolution HAADF image of a nanodot on top of the amorphous SiO2 layer, taken along the [1...
Jump to Figure 2
Chemical analysis of the sample grown at 530 °C. (a) Low-resolution cross-section STEM HAADF image ...
Jump to Figure 3
(a) PL spectra measured at 7 K and with an excitation power of 104 mW of a Si substrate and the bar...
Jump to Figure 4
Simulated transition energy as a function of the size of CIS nanodots according to Equation 1. The illustrate...
Jump to Figure 5
Beilstein J. Nanotechnol. 2019, 10, 1103–1111, doi:10.3762/bjnano.10.110
(a) Optical image of the back-gate GaAs:Mg nanowire FET device. The inset shows an illustrative TEM...
Scanning electron images of GaAs nanowires grown on GaAs(111)B (a,c) and on Si(111) (b,d) substrate...
(a), (b) Grazing incidence X-ray diffraction diffractograms (ω/2θ) measured for samples A and B, re...
(a) p-type characteristic curves Ids–Vg of a FET based on the Mg-doped single GaAs nanowire #1 grow...
PL spectra of Mg-doped GaAs nanowires measured at ≈6 K under an excitation power of ≈27.7 mW, for (...
Dependence on the excitation power of the peak energy for (a) sample A and (b) sample B, and of the...
Jump to Figure 6
Dependence on the temperature of the peak energy for (a) sample A and (b) sample B, and of the PL i...
Jump to Figure 7
Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212
Subscribe to our Latest Articles RSS Feed.
Register and get informed about new articles.
Follow the Beilstein-Institut