Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

Jacques Perrin Toinin,
Alain Portavoce,
Khalid Hoummada,
Michaël Texier,
Maxime Bertoglio,
Sandrine Bernardini,
Marco Abbarchi and
Lee Chow

Full Research Paper
Published 30 Jan 2015

PDF
Album
1. Figure 1: SRIM calculations of the implant distribution of Te (red) and Se (blue) atoms in Ge. The distributi...
  
  Jump to Figure 1
2. Figure 2: SEM plan-view images of the as-implanted Se sample: (1) low resolution view showing the different t...
  
  Jump to Figure 2
3. Figure 3: Thermal annealing effects on the co-implanted Se/Te sample: (1) as-implanted, (2) TB = 4.1 µm; (3) ...
  
  Jump to Figure 3
4. Figure 4: (1) and (2) TEM cross-sectional view of the Se-implanted sample after annealing with TB = 3.1 µm. (...
  
  Jump to Figure 4
5. Figure 5: SEM plan-view image obtained after annealing a 340 nm thick Ge layer sputtered on the native Si oxi...
  
  Jump to Figure 5

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

Full Text

Si/Ge intermixing during Ge Stranski–Krastanov growth

Alain Portavoce,
Khalid Hoummada,
Antoine Ronda,
Dominique Mangelinck and
Isabelle Berbezier

Full Research Paper
Published 09 Dec 2014

PDF
Album
1. Figure 1: SEM images acquired during APT sample preparation in a dual-beam FIB process. The image sequence (a...
  
  Jump to Figure 1
2. Figure 2: Sketch of the sample structure and AFM measurements performed on the sample surface after MBE growt...
  
  Jump to Figure 2
3. Figure 3: APT volume (100 × 100 × 90 nm³) obtained from the sample. Green, gray, red and blue dots correspond...
  
  Jump to Figure 3
4. Figure 4: Top-down, 1D Ge concentration profiles measured between the islands in two different samples. The p...
  
  Jump to Figure 4
5. Figure 5: Cross-sectional TEM image of a typical dome island (a), and side-views of two different APT volumes...
  
  Jump to Figure 5
6. Figure 6: APT volume showing 2% of the Ni atoms, 5% of the Ge atoms, and 100% of the O atoms (the Si atoms ar...
  
  Jump to Figure 6
7. Figure 7: Top-down 1D Ge concentration profiles measured in two different APT volumes, one in the direction p...
  
  Jump to Figure 7
8. Figure 8: APT analysis: (a) 3D volume (120 × 120 × 100 nm³), (b) 2D map of the Ge concentration distribution ...
  
  Jump to Figure 8
9. Figure 9: (a) APT volume (90 × 90 × 130 nm³) and (b) Si and Ge 1D concentration profiles measured in (a). Figure 9c in...
  
  Jump to Figure 9
10. Figure 10: (a) APT volume (70 × 70 × 85 nm³) and (b) Si and Ge 1D concentration profiles measured in this volu...
  
  Jump to Figure 10
11. Figure 11: APT measurements obtained for four APT volumes (green and red surfaces) which form almost half of a...
  
  Jump to Figure 11