1 article(s) from Lallemand, Florent
sMIM setup showing the detection of the sMIM-C (ε) and sMIM-R (σ) signals. VAC and VDC are applied ...
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Topography of the cross section of the PIN diode. The scanned area is 83 µm × 54 µm. Deep trenches ...
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sMIM results for a 25 µm × 25 µm area at the PIN anode area (area 1 in Figure 2). (a) ∂C/∂V phase, (b) ∂C/∂V...
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sMIM-C profiles along the central axis of the diode structure. A single line scan (blue) and the av...
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Depth profiles (∂C/∂V phase, ∂C/∂V amplitude, sMIM-R, and sMIM-C) along the PIN structure compared ...
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sMIM acquisitions of the bottom of the deep trench structure. (a) ∂C/∂V phase (10 µm × 10 µm), (b) ∂...
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sMIM maps acquired at VDC = 0 V on a large area (83 µm × 54 µm) of the PIN diode device. (a) ∂C/∂V ...
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Analytic calculations of the equivalent capacitance CNano determined for the tip–sample contact as ...
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Force curve as a function of time during the dynamic spectroscopy sMIM measurement. 1: tip approach...
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sMIM-C DCUBE slices (55 µm × 33 µm) obtained for various VDC values (the bias is applied to the sam...
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Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159
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