Kelvin probe force microscopy for local characterisation of active nanoelectronic devices

Tino Wagner,
Hannes Beyer,
Patrick Reissner,
Philipp Mensch,
Heike Riel,
Bernd Gotsmann and
Andreas Stemmer

Full Research Paper
Published 23 Nov 2015

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1. Figure 1: Contributions of apex, cone, and cantilever to the first (AM, left) and second (FM, right) order ca...
  
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2. Figure 2: a) Sideband amplitude (blue) and phase (red) relative to the carrier oscillation measured during a ...
  
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3. Figure 3: In-phase (red) and quadrature (blue) sideband amplitudes, normalised to the carrier oscillation amp...
  
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4. Figure 4: Modulation indices of the sidebands at ω_m (a) and 2ω_m (b) against for different modulation amplitu...
  
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5. Figure 5: Block diagram of a Kelvin controller based on a) a proportional–integral–differential (PID) control...
  
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6. Figure 6: Closed-loop response of the Kelvin observer (black) and a proportional-integral controller (red) to...
  
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7. Figure 7: Normalised closed-loop bandwidth (−3 dB) of the steady-state Kelvin observer as a function of the n...
  
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8. Figure 8: Schematic of the modified KFM setup. For topography feedback, the cantilever is excited at a consta...
  
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9. Figure 9: a) Topography, b) tip–sample capacitance gradient, C'', and c) local contact potential difference, U...
  
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10. Figure 10: a), b) Kelvin and c), d) error signal of an InAs nanowire similar to the device shown in Figure 9, measured...
  
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11. Figure 11: One-dimensional power spectral densities of the error signals in Figure 10c,d. Integral feedback works well a...
  
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