1 article(s) from Scheid, Emmanuel
Removed SiGe thickness measured by different methods (TEM, XRD and ellipsometry) as a function of t...
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Removed SiGe thickness (measured by ellipsometry) as a function of etching time for two different G...
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(a) Sheet resistance RS, (b) Hall dose NH, and (c) Hall mobility µH as functions of the etching tim...
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Depth profiles of (a) active dopant concentration and (b) carrier mobility extracted from the DHE m...
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Sheet resistance as a function of the laser energy density for 6 nm SiGeOI (xGe = 0.25) layer impla...
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Hall effect measurements (raw data: (a) RS, (b) NH and (c) µH) of the SiGeOI sample (xGe = 0.25) im...
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Depth profiles of (a) active dopant concentration and (b) carrier mobility extracted from DHE measu...
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Concentration depth profiles of (a) arsenic and (b) oxygen measured by SIMS in 11 nm thick SOI wafe...
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Hall effect measurements (raw data: (a) RS, (b) NH and (c) µH) of the SOI samples implanted with ar...
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Active dopant concentration depth profiles as extracted by DHE measurements from 11 nm thick SOI wa...
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Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184
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