3 article(s) from Yu, Xiao
Schematic representation of Ni/CTF-1 composite synthesis via microwave-assisted thermal decompositi...
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PXRD patterns of Ni/CTF-1 composite materials. The simulated diffractograms for hexagonal close-pac...
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TEM images of Ni/CTF-1-600-22 showing (a) Ni nanoparticles supported on CTF, (b,c) the aggregation ...
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SEM images and EDX elemental mappings of Ni for (a) Ni/CTF-1-400-20, (b) Ni/CTF1-400-35, (c) Ni/CTF...
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Nitrogen adsorption and desorption isotherms (at 77 K) of Ni/CTF-1 composites.
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XPS measurements of Ni/CTF-1-600-22 with deconvoluted Ni 2p (left) (Sat. = satellite) and N 1s spec...
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(a) OER polarization curves of various materials, (b) overpotential values calculated from (a); (c)...
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Nyquist plots recorded in 1 mol/L KOH solution.
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(a) ORR polarization curves of various materials, (b) half-wave potential values calculated from (a...
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Beilstein J. Nanotechnol. 2020, 11, 770–781, doi:10.3762/bjnano.11.62
Experimental (×) and calculated (—) X-ray powder diffraction patterns of 1-S0 (a) and 2-S2 (b). Pea...
TEM images (a–c) and HRTEM images (d–f) for 1-S0, 2-S0, and 2-S2.
The FTIR spectra of 1-S0, 1-S2 and 1-S5 (a); 2-S0, 2-S2 and 2-S5 (b).
Core-level XP spectra of Ti 2p (a and d), O 1s (b and e) and S 2p (c and f) for 2-S1 and 2-S3. The ...
Valence-band XPS of 2-S0, 2-S0.5, 2-S1, 2-S3 and 2-S5.
The UV–vis DRS of 2-S0, 2-S0.5, 2-S1, 2-S3 and 2-S5. The inset is the magnified plot of the UV–vis ...
The temporal evolution of the UV–Vis spectra during the photodegradation of aqueous MB over the sam...
Nitrogen adsorption–desorption isotherms of samples 2-S0, 2-S and 2-S5. The inset shows the pore si...
The PL spectra of 2-S0, 2-S0.5, 2-S2, 2-S3 and 2-S5 using an excitation wavelength of λex = 300 nm.
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ESR spectra of radical adducts trapped by DMPO in 2-S0 (a, e), 2-S2 (b, f), 2-S3 (c, g), and 2-S2 (...
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Beilstein J. Nanotechnol. 2019, 10, 2116–2127, doi:10.3762/bjnano.10.206
Conceptual diagram of a SiNW FET.
Typical measurement system.
Shape of the power spectrum of IRS from 5-bit length shift register.
Schematic of the applied SiNW FET device.
SEM image of the SiNW FET device. The scale bar is 20 µm.
Ids–Vds DC measurement results.
Ids–Vg DC measurement results.
Conceptual diagram of the measurement setup.
Simplified schematic of the measurement amplifier.
Generated excitation sequence; a) sample in the time domain, and b) (scaled) energy content.
Admittance spectroscopy for gate voltages from 1.0 V to 3.0 V.
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Admittance spectroscopy for gate voltages of 2.0 V and 2.2 V.
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Beilstein J. Nanotechnol. 2014, 5, 964–972, doi:10.3762/bjnano.5.110
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