Photocatalytic methane oxidation over a TiO₂/SiNWs p–n junction catalyst at room temperature

• Qui Thanh Hoai Ta,
• Luan Minh Nguyen,
• Ngoc Hoi Nguyen,
• Phan Khanh Thinh Nguyen and
• Dai Hai Nguyen

Beilstein J. Nanotechnol. 2024, 15, 1132–1141, doi:10.3762/bjnano.15.92

• TiO2/SiNWs catalyst may be attributed to the vertical wires, which enable strong light scattering leading to enhancement in light harvesting. The optical bandgap values of SiNWs and TiO2/SiNWs are estimated at around 3.8 and 3.3 eV, respectively. Figure 3b displays the current–voltage (I–V) curves of

Bolometric IR photoresponse based on a 3D micro-nano integrated CNT architecture

• Yasameen Al-Mafrachi,
• Sandeep Yadav,
• Sascha Preu,
• Jörg J. Schneider and
• Oktay Yilmazoglu

Beilstein J. Nanotechnol. 2024, 15, 1030–1040, doi:10.3762/bjnano.15.84

• , demonstrating its robustness in extreme environments. We achieved a current (voltage) responsivity of 2 mA/W (30 V/W) to the absorbed IR power, which is already comparable in the context of current CNT-based microbolometer technology with high potential for miniaturized design and responsivity optimization

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

• Gabriela Lewińska,
• Piotr Jeleń,
• Zofia Kucia,
• Maciej Sitarz,
• Łukasz Walczak,
• Bartłomiej Szafraniak,
• Jerzy Sanetra and
• Konstanty W. Marszalek

Beilstein J. Nanotechnol. 2024, 15, 144–156, doi:10.3762/bjnano.15.14

• obtained by conducting UPS analysis, and then the energy graph of the solar cell was built. Impedance spectroscopy results showed increased conductivity of the active layer upon doping with quantum dots. Current–voltage characteristics and standard parameters of photovoltaic cells were simulated for two

• solar cells. Current–voltage characteristics for (a) ITO/active layer/Al and (b) ITO/PEDOT:PSS/P3HT:PCBM:QD/aluminium bulk heterojunctions cells. Designations of the nanodots used in the system. Refractive indices and extinction coefficient parameters for investigated quantum dots thin films. Roughness

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

• Leonid S. Revin,
• Dmitry A. Pimanov,
• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Viktor O. Zbrozhek,
• Andrey V. Samartsev,
• Anastasia N. Orlova,
• Dmitry V. Masterov,
• Alexey E. Parafin,
• Victoria Yu. Safonova,
• Anna V. Gordeeva,
• Andrey L. Pankratov,
• Leonid S. Kuzmin,
• Anatolie S. Sidorenko,
• Silvia Masi and
• Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

• results. Measurement results of samples of receiving systems with CEBs Measurements of samples from the LSPE VB 210/240 SINS1 series, deposited at NNSTU, were performed in a sorption 3He cryostat at a temperature of 300 mK. Current–voltage (I–V) characteristics (Figure 5), frequency response (Figure 6

Spatial variations of conductivity of self-assembled monolayers of dodecanethiol on Au/mica and Au/Si substrates

• Julian Skolaut,
• Jędrzej Tepper,
• Federica Galli,
• Wulf Wulfhekel and
• Jan M. van Ruitenbeek

Beilstein J. Nanotechnol. 2023, 14, 1169–1177, doi:10.3762/bjnano.14.97

• SAM by the tip during imaging. Studies of the extent and type presented here can be used as the basis for well-founded statements concerning electronic properties such as the current–voltage characteristics of the molecular SAM. To this purpose, the characteristics should only be averaged over

A visible-light photodetector based on heterojunctions between CuO nanoparticles and ZnO nanorods

• Doan Nhat Giang,
• Nhat Minh Nguyen,
• Duc Anh Ngo,
• Thanh Trang Tran,
• Le Thai Duy,
• Cong Khanh Tran,
• Thi Thanh Van Tran,
• Phan Phuong Ha La and
• Vinh Quang Dang

Beilstein J. Nanotechnol. 2023, 14, 1018–1027, doi:10.3762/bjnano.14.84

• composition of the materials. The morphology of pure CuO NPs and CuO NPs/ZnO NRs was examined by field-emission scanning electron microscopy. UV–vis absorption spectroscopy showed the optical properties of the materials. The photodetector performance was studied through the current–voltage (I–V

A distributed active patch antenna model of a Josephson oscillator

• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2023, 14, 151–164, doi:10.3762/bjnano.14.16

• emitted but mostly reflected backwards in the JJ. Propagation and reflection of FFO pulses in the transmission line (TL) formed by the JJ leads to the formation of standing waves. The corresponding cavity mode resonances are manifested by Fiske steps in the current–voltage (I–V) characteristics [16][28

• , connected by the transmission line impedance ZTL. (a) Simulated current–voltage characteristics of a junction with L = 5λJ, Φ/Φ0 = 5 and α = 0.1. Blue symbols represent the full numeric solution of the sine-Gordon equation (up and down current sweep). The red line represents the approximate (perturbative

Frontiers of nanoelectronics: intrinsic Josephson effect and prospects of superconducting spintronics

• Anatolie S. Sidorenko,
• Horst Hahn and
• Vladimir Krasnov

Beilstein J. Nanotechnol. 2023, 14, 79–82, doi:10.3762/bjnano.14.9

• magnetic proximity effect at a ferromagnetic–insulator–superconductor (FIS) interface was investigated through combined experimental and theoretical work [25]. Manifestations of nonlinear features in magnetic dynamics and current–voltage characteristics of the 0 Josephson junction in superconductor

Observation of collective excitation of surface plasmon resonances in large Josephson junction arrays

• Roger Cattaneo,
• Mikhail A. Galin and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2022, 13, 1578–1588, doi:10.3762/bjnano.13.132

• formation of standing waves at the electrode/substrate interface. We observe that resonant steps in the current–voltage characteristics appear above some threshold number of junctions, Nth ≈ 100, and then progressively enhance in amplitude with further increment of the number of junctions in the resistive

• profound step structure in the current–voltage (I–V) characteristics. The resonances are caused by the formation of surface plasmon-type standing waves at the electrode–substrate interface [34]. Thus, the electrodes themselves act as a common external resonator, facilitating the effective indirect coupling

Induced electric conductivity in organic polymers

• Konstantin Y. Arutyunov,
• Anatoli S. Gurski,
• Vladimir V. Artemov,
• Alexander L. Vasiliev,
• Azat R. Yusupov,
• Danfis D. Karamov and
• Alexei N. Lachinov

Beilstein J. Nanotechnol. 2022, 13, 1551–1557, doi:10.3762/bjnano.13.128

• mechanical stress is applied. In this work, the transport properties of thin-film layered lead–PDP–lead structures were experimentally studied in a wide temperature range. At sufficiently high temperatures, the current voltage characteristics are satisfactorily described in terms of the injection model of

• that in the measured Pb–PDP–Pb structure, the shape of the current–voltage characteristics strongly depends on temperature. At 300 K the I–V dependencies have a nonlinear character j ≈ kUn, typical for organic dielectrics. At temperatures ≈77 K and below, the dependence j = f(U) is also nonlinear, but

• described in terms of the injection current model limited by the space charge. At low temperatures, the tunneling mechanism is the predominant mechanism. Figure 3 shows the current–voltage characteristics of Pb–PDP–Pb structures with different PDP film thicknesses. With increase of the polymer film

Coherent amplification of radiation from two phase-locked Josephson junction arrays

• Mikhail A. Galin,
• Vladimir M. Krasnov,
• Ilya A. Shereshevsky,
• Nadezhda K. Vdovicheva and
• Vladislav V. Kurin

Beilstein J. Nanotechnol. 2022, 13, 1445–1457, doi:10.3762/bjnano.13.119

• measurement of current–voltage characteristic (IVC) and bolometric analysis of the emitted radiation. In all cases, we observe clear signatures of inter-array interaction. They occur when both arrays are biased at the same voltage and oscillate at the same frequency, coinciding with one of the cavity modes in

Density of states in the presence of spin-dependent scattering in SF bilayers: a numerical and analytical approach

• Tairzhan Karabassov,
• Valeriia D. Pashkovskaia,
• Nikita A. Parkhomenko,
• Anastasia V. Guravova,
• Elena A. Kazakova,
• Boris G. Lvov,
• Alexander A. Golubov and
• Andrey S. Vasenko

Beilstein J. Nanotechnol. 2022, 13, 1418–1431, doi:10.3762/bjnano.13.117

• spin–orbit scattering on the DOS behavior. Then, we provide a comparison with the exact numerical calculation using a self-consistent two-step iterative method. Furthermore, we briefly discuss the consequences of the different kinds of scattering on the current–voltage characteristics in SFIFS

• features is the examination of the current–voltage characteristics. Utilizing the Werthamer expression for the quasiparticle current in tunneling junctions, we can calculate the I–V curves for an SFIFS junction. The current then reads Here, Nf1,2(E) is the density of states (DOS) in the corresponding

• influence on the current. Figure 8 demonstrates the current–voltage characteristics of the SFIFS junction calculated in the presence of parallel magnetic (Figure 8a), spin–orbit (Figure 8b), and perpendicular magnetic scattering (Figure 8c). From the plots, we can notice that while a magnetic scattering

Nonlinear features of the superconductor–ferromagnet–superconductor φ₀ Josephson junction in the ferromagnetic resonance region

• Aliasghar Janalizadeh,
• Ilhom R. Rahmonov,
• Sara A. Abdelmoneim,
• Yury M. Shukrinov and
• Mohammad R. Kolahchi

Beilstein J. Nanotechnol. 2022, 13, 1155–1166, doi:10.3762/bjnano.13.97

• difference with the magnetic moment of a ferromagnet in a φ0 junction leads to a number of unique features important for superconducting spintronics and modern information technology [1][2][3][4][5]. It allows one to control the magnetization precession by the superconducting current and affects the current

• –voltage (I–V) characteristics by magnetic dynamics in the ferromagnet, in particular, to create a DC component in the superconducting current [6][7][8]. A remarkable manifestation of this coupling is the possibility to stimulate a magnetization reversal in the ferromagnetic layer by applying a current

Efficiency of electron cooling in cold-electron bolometers with traps

• Dmitrii A. Pimanov,
• Vladimir A. Frost,
• Anton V. Blagodatkin,
• Anna V. Gordeeva,
• Andrey L. Pankratov and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2022, 13, 896–901, doi:10.3762/bjnano.13.80

• the measured bolometric structure. After the program run, we get the fitted current–voltage characteristics in a numerical form, as well as a set of all parameters that gives the best solution of the equations. In this way, we can determine the parameters of Andreev current and leakage current, as

• as in [7]. The current–voltage characteristics of this sample were measured in a Triton 200 dilution cryostat at different phonon temperatures from 100 to 300 mK. According to these characteristics, the electron temperature, as well as the contribution of Andreev and leakage currents, were determined

• with the use of the heat balance equation (Equation 1). The theoretical current–voltage characteristics show good matching with the experimental ones, as it can be seen in Figure 1a. In Figure 1b we show the plots of differential resistances to demonstrate that the fit agrees well not only for the

Approaching microwave photon sensitivity with Al Josephson junctions

• Andrey L. Pankratov,
• Anna V. Gordeeva,
• Leonid S. Revin,
• Dmitry A. Ladeynov,
• Anton A. Yablokov and
• Leonid S. Kuzmin

Beilstein J. Nanotechnol. 2022, 13, 582–589, doi:10.3762/bjnano.13.50

• switching probability, respectively. We begin our consideration of the Josephson junction as a photon counter with its current–voltage characteristic (see Figure 2a) and the determination of the critical current. All further analysis of experimental results and understanding of the energy relations of the

• , used before for terahertz receiver applications [27][28], in Figure 2a one can see a typical current–voltage characteristics (IVC) with the critical current close to the theoretical value [29]. Besides, a subgap structure is visible at the inverse branch of the IVC. Such a structure with peculiarities

• (assuming front smoothing due to twisted pairs) and voltage across the JJ. (a) The current–voltage characteristics of the Josephson junction with Ic = 8.6 μA at 50 mK. The red point indicates the state of JJ in a “waiting” mode, the arrow shows a jump to the resistive state after absorption of photons. (b

A chemiresistive sensor array based on polyaniline nanocomposites and machine learning classification

• Jiri Kroutil,
• Alexandr Laposa,
• Ali Ahmad,
• Jan Voves,
• Vojtech Povolny,
• Ladislav Klimsa,
• Marina Davydova and
• Miroslav Husak

Beilstein J. Nanotechnol. 2022, 13, 411–423, doi:10.3762/bjnano.13.34

• been used for the classification of gas sensor data using a 10-fold cross-validation to reach the highest classification rate. Results and Discussion The sensors layers were investigated by scanning electron microcopy (SEM), Raman spectroscopy, current–voltage and temperature analysis, and gas sensing

• +, characteristic band of the polaron radical cation); (6) 1412 cm−1 (phenazine structures); (7) 1498 cm−1 (C=N of the quinoid nonprotonated diimine units); (8) 1590 cm−1 (C=C stretching vibration of the quinonoid ring) [16][17]. Current–voltage and temperature analysis Figure 3 shows current–voltage

• the PANI. Current–voltage characteristics of active layers. Temperature dependence characteristics of active layers. Schematic diagram of the gas sensing characterizations apparatus. Gas characterization of active layers towards (a) 25 ppm of NH3, (b) 25 ppm of NO2, (c) 25 ppm of CO, (d) 250 ppm of

A broadband detector based on series YBCO grain boundary Josephson junctions

• Egor I. Glushkov,
• Alexander V. Chiginev,
• Leonid S. Kuzmin and
• Leonid S. Revin

Beilstein J. Nanotechnol. 2022, 13, 325–333, doi:10.3762/bjnano.13.27

• –frequency characteristic, beam pattern, and fraction of the absorbed power in each Josephson junction were investigated. Based on the obtained results, a numerical simulation of one-dimensional arrays was carried out. The dc characteristics of the detector were calculated, that is, current–voltage

• there are N junctions connected in series one after another with a common load in parallel to all junctions (see Figure 5, left). The circuit equations describing the current–voltage relation are [27][28][29]: where ϕi is the Josephson phase in the i-th junction, and the overdot denotes differentiation

• (Z) = RL, dIm(Z)/dω = 2LL, and . For the serial resonance at 250 GHz, RL = 43 Ω, LL = 500 pH, and CL = 0.8 fF. Figure 5, right, shows the current–voltage characteristics (IVCs) of a single junction with the antenna under the influence of an external signal. A bias current regime with the optimum

Impact of device design on the electronic and optoelectronic properties of integrated Ru-terpyridine complexes

• Max Mennicken,
• Sophia Katharina Peter,
• Corinna Kaulen,
• Ulrich Simon and
• Silvia Karthäuser

Beilstein J. Nanotechnol. 2022, 13, 219–229, doi:10.3762/bjnano.13.16

• apparatus using an acceleration voltage of 5 kV. The electronic characterization of the Ru(TP)2-complex wire devices as well as the Ru(MPTP)2–AuNP devices was conducted with a Keithley 6430 sub-femtoampere remote source meter as described recently [21]. Current-voltage (I/U) characteristics were taken in

Sputtering onto liquids: a critical review

• Anastasiya Sergievskaya,
• Adrien Chauvin and
• Stephanos Konstantinidis

Beilstein J. Nanotechnol. 2022, 13, 10–53, doi:10.3762/bjnano.13.2

• reported data; we will address the influence of the sputtering parameters (sputter power, current, voltage, sputter time, working gas pressure, and the type of sputtering plasma) and host liquid properties (composition, temperature, viscosity, and surface tension) on the NP formation as well as a detailed

• distribution and stability of NPs produced via SoL depend on many experimental parameters that can be divided into two groups, namely sputtering parameters and host liquid parameters. Sputtering parameters include the sputter power, current, voltage, time, the distance between target and substrate surface, the

• Power, current, voltage (i.e., particle flux): The effect of the discharge current and/or discharge voltage on the NPs was studied in [113][114][115][116][117][118][119][120][121][122][123][124][125][126][127][128][129]. Controversial data were obtained by different research groups. It is worth noting

Design aspects of Bi₂Sr₂CaCu₂O_8+δ THz sources: optimization of thermal and radiative properties

• Mikhail M. Krasnov,
• Natalia D. Novikova,
• Roger Cattaneo,
• Alexey A. Kalenyuk and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 1392–1403, doi:10.3762/bjnano.12.103

• photolithography and argon-ion etching. Mesa structures are formed at the overlap between the line and the electrodes, as indicated in Figure 1a. Figure 2a,b shows current–voltage (I–V) characteristics of mesas of whisker- and crystal-based devices, respectively. The I–V curves are fairly similar. They contain

• of both devices. Current–voltage characteristics of mesa structures on (a) whisker- and (b) crystal-based devices. (c, d) On-chip generation–detection experiment for (c) whisker- and (d) crystal-based devices. Here, the ac resistance of the detector mesa is shown as function of the total dc

Chemical vapor deposition of germanium-rich CrGe_x nanowires

• Vladislav Dřínek,
• Stanislav Tiagulskyi,
• Roman Yatskiv,
• Jan Grym,
• Radek Fajgar,
• Věra Jandová,
• Martin Koštejn and
• Jaroslav Kupčík

Beilstein J. Nanotechnol. 2021, 12, 1365–1371, doi:10.3762/bjnano.12.100

• with the Ga+ focused ion beam (FIB), gas injection system (GIS), and nanomanipulator OmniProbe 400 (Oxford Instruments) with a tungsten tip. The nanomanipulator enabled a direct contact of single as-grown NWs. The current–voltage (I–V) characteristics were measured using a Keithley 237 source

Nonmonotonous temperature dependence of Shapiro steps in YBCO grain boundary junctions

• Leonid S. Revin,
• Dmitriy V. Masterov,
• Alexey E. Parafin,
• Sergey A. Pavlov and
• Andrey L. Pankratov

Beilstein J. Nanotechnol. 2021, 12, 1279–1285, doi:10.3762/bjnano.12.95

• depends on the characteristic frequency ωc = 2eIcRN/ℏ of the JJ. Results First, the current–voltage characteristics (IVCs) were measured, and the value of the critical current as a function of temperature was found, see Figure 1. The Ic(T) dependence is similar to the experimental observations for other

Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review

• Keshav Nagpal,
• Erwan Rauwel,
• Frédérique Ducroquet and
• Protima Rauwel

Beilstein J. Nanotechnol. 2021, 12, 1078–1092, doi:10.3762/bjnano.12.80

• , EML, ETL, and cathode) is analyzed. Subsequently, various characteristics of LED containing carbon nanostructures and plasmonic NP are discussed in terms of EQE, internal quantum efficiency, luminance, EL, and current–voltage (I–V) characteristics. A list of various abbreviations employed in this

In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures

• Olena M. Kapran,
• Roman Morari,
• Taras Golod,
• Evgenii A. Borodianskyi,
• Vladimir Boian,
• Andrei Prepelita,
• Nikolay Klenov,
• Anatoli S. Sidorenko and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 913–923, doi:10.3762/bjnano.12.68

• ) transition occurs with Tc(S) = 8 K and T′c(S′) = 7.8 K and the shape of Rxx(T) remains the same. This indicates that the current–voltage characteristics at low bias are almost linear and resistance is almost bias-independent. However, at high bias, Iac = 500 μA, Rxx(T) is significantly smeared out and the

9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber

• Rafal Pietruszka,
• Bartlomiej S. Witkowski,
• Monika Ozga,
• Katarzyna Gwozdz,
• Ewa Placzek-Popko and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 766–774, doi:10.3762/bjnano.12.60

• . The obtained solar cell shows response in a wide spectral range from ultraviolet to infrared. Current–voltage and current–voltage–temperature measurements were performed to evaluate basic photovoltaic parameters. At room temperature, the cells efficiency equals to 9.1% for textured structures and 5.4

• the light-trapping effect. The impact of light-trapping on the operation of solar cells is presented by means of current–voltage curves. In contrast, sample B showed a flat surface morphology. The average RMS roughness value was 9 nm. Therefore, interference peaks in external quantum efficiency (EQE

• solar cells. Figure 5b presents the current–voltage characteristics of the textured and planar ZnO/Si solar cells. Both types of the samples were investigated under standard test conditions (100 mW·cm−2, AM 1.5G, 25 °C). A better performance was observed for sample A. Short-circuit current values were