Nanostructure sensitization of transition metal oxides for visible-light photocatalysis

• Hongjun Chen and
• Lianzhou Wang

Beilstein J. Nanotechnol. 2014, 5, 696–710, doi:10.3762/bjnano.5.82

• the band alignment between CdS and CdSe, the co-sensitized ZnO nanowire arrayed photoanode exhibited almost the entire visible-light absorption and fast electron transfer from CdSe quantum dots to ZnO nanowires and thereby the IPCE value can reach 45% at 0 V vs Ag/AgCl, as demonstrated in Figure 4c

Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

• Cathy Bugot,
• Nathanaëlle Schneider,
• Daniel Lincot and
• Frédérique Donsanti

Beilstein J. Nanotechnol. 2013, 4, 750–757, doi:10.3762/bjnano.4.85

• of their properties [13][14][15]. It is therefore a suitable technique for the deposition of buffer layers. Platzer-Björkman et al. have used ALD to improve the energy-band alignment between the CIGS and the front electrode by controlling the oxygen concentration in Zn(S,O) buffer layers [4][16

Low-temperature synthesis of carbon nanotubes on indium tin oxide electrodes for organic solar cells

• Andrea Capasso,
• Luigi Salamandra,
• Aldo Di Carlo,
• John M. Bell and
• Nunzio Motta

Beilstein J. Nanotechnol. 2012, 3, 524–532, doi:10.3762/bjnano.3.60

• states of ITO–CNT lying lower than those of ITO. A similar kind of band alignment is almost achieved in the standard cell architecture by the insertion of a layer of poly(3,4-ethylene dioxythiophene):(polystyrene sulfonic acid) (PEDOT:PSS). This polymer is used to improve the contact (and reduce the

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

• Thomas H. Loeber,
• Dirk Hoffmann and
• Henning Fouckhardt

Beilstein J. Nanotechnol. 2011, 2, 333–338, doi:10.3762/bjnano.2.39

• (SK) growth, depending on the precise control of the Sb/Ga V/III flux ratio, coverage, and growth temperature. Furthermore these parameters influence dot shape, size and density. The staggered (type-II) band alignment with a large valence band offset provides hole confinement. The electronic states