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Search for "band alignment" in Full Text gives 31 result(s) in Beilstein Journal of Nanotechnology.

Functionalized nanostructures for enhanced photocatalytic performance under solar light

  • Liejin Guo,
  • Dengwei Jing,
  • Maochang Liu,
  • Yubin Chen,
  • Shaohua Shen,
  • Jinwen Shi and
  • Kai Zhang

Beilstein J. Nanotechnol. 2014, 5, 994–1004, doi:10.3762/bjnano.5.113

Graphical Abstract
  • nanoscale, i.e., materials with the same compositions but different phases with certain band alignment. We conclude this review with perspectives on nanostructure design that might direct future research of this technology. Keywords: functionalized nanostructures; hydrogen; photocatalysis; photocatalytic
  • with well-tailored band alignment provides a powerful means to the improvement of the photocatalytic activity. In the process of our study, we have also paid special attention on the nanoscale control of the material morphology and construction of functionalized nanostructures to promote charge
  • junction-free semiconductors [66]. Depending on the band gaps and the electronic affinity of semiconductors, semiconductor heterostructures can be divided into three different cases: type-I, type-II and type-III band alignment [67]. In a type-II band alignment, the band offsets in the conduction and
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Published 09 Jul 2014

Biomolecule-assisted synthesis of carbon nitride and sulfur-doped carbon nitride heterojunction nanosheets: An efficient heterojunction photocatalyst for photoelectrochemical applications

  • Hua Bing Tao,
  • Hong Bin Yang,
  • Jiazang Chen,
  • Jianwei Miao and
  • Bin Liu

Beilstein J. Nanotechnol. 2014, 5, 770–777, doi:10.3762/bjnano.5.89

Graphical Abstract
  • ). This type-II band alignment means that once CN and CNS are electronically coupled, a well-matched band structure for charge separation will be formed. In this case, the photogenerated electrons are transferred from CN to CNS, while the photogenerated holes are transferred from CNS to CN, leading to an
  • photoelectrode, which can be attributed to the large contact area between the CN/CNS photoelectrode and the electrolyte as well as an appropriate band alignment of the CN/CNS interface. It has been well-established that photocurrent is generated because of the diffusion of photogenerated electrons to the back
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Published 03 Jun 2014

Nanostructure sensitization of transition metal oxides for visible-light photocatalysis

  • Hongjun Chen and
  • Lianzhou Wang

Beilstein J. Nanotechnol. 2014, 5, 696–710, doi:10.3762/bjnano.5.82

Graphical Abstract
  • the band alignment between CdS and CdSe, the co-sensitized ZnO nanowire arrayed photoanode exhibited almost the entire visible-light absorption and fast electron transfer from CdSe quantum dots to ZnO nanowires and thereby the IPCE value can reach 45% at 0 V vs Ag/AgCl, as demonstrated in Figure 4c
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Published 23 May 2014

Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

  • Cathy Bugot,
  • Nathanaëlle Schneider,
  • Daniel Lincot and
  • Frédérique Donsanti

Beilstein J. Nanotechnol. 2013, 4, 750–757, doi:10.3762/bjnano.4.85

Graphical Abstract
  • of their properties [13][14][15]. It is therefore a suitable technique for the deposition of buffer layers. Platzer-Björkman et al. have used ALD to improve the energy-band alignment between the CIGS and the front electrode by controlling the oxygen concentration in Zn(S,O) buffer layers [4][16
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Published 13 Nov 2013

Low-temperature synthesis of carbon nanotubes on indium tin oxide electrodes for organic solar cells

  • Andrea Capasso,
  • Luigi Salamandra,
  • Aldo Di Carlo,
  • John M. Bell and
  • Nunzio Motta

Beilstein J. Nanotechnol. 2012, 3, 524–532, doi:10.3762/bjnano.3.60

Graphical Abstract
  • states of ITO–CNT lying lower than those of ITO. A similar kind of band alignment is almost achieved in the standard cell architecture by the insertion of a layer of poly(3,4-ethylene dioxythiophene):(polystyrene sulfonic acid) (PEDOT:PSS). This polymer is used to improve the contact (and reduce the
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Published 19 Jul 2012

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

  • Thomas H. Loeber,
  • Dirk Hoffmann and
  • Henning Fouckhardt

Beilstein J. Nanotechnol. 2011, 2, 333–338, doi:10.3762/bjnano.2.39

Graphical Abstract
  • (SK) growth, depending on the precise control of the Sb/Ga V/III flux ratio, coverage, and growth temperature. Furthermore these parameters influence dot shape, size and density. The staggered (type-II) band alignment with a large valence band offset provides hole confinement. The electronic states
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Published 30 Jun 2011
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