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Search for "dielectric" in Full Text gives 442 result(s) in Beilstein Journal of Nanotechnology. Showing first 200.

Mn-doped ZnO nanopowders prepared by sol–gel and microwave-assisted sol–gel methods and their photocatalytic properties

  • Cristina Maria Vlăduț,
  • Crina Anastasescu,
  • Silviu Preda,
  • Oana Catalina Mocioiu,
  • Simona Petrescu,
  • Jeanina Pandele-Cusu,
  • Dana Culita,
  • Veronica Bratan,
  • Ioan Balint and
  • Maria Zaharescu

Beilstein J. Nanotechnol. 2024, 15, 1283–1296, doi:10.3762/bjnano.15.104

Graphical Abstract
  • dielectric properties of material [17]. Therefore, instantaneous decomposition of the precursors occurs, leading to the formation of a supersaturated solution. Consequently, appropriate conditions for obtaining materials with well-defined properties (i.e., monodispersed nanoparticles from rapid and brief
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Published 28 Oct 2024

Quantum-to-classical modeling of monolayer Ge2Se2 and its application in photovoltaic devices

  • Anup Shrivastava,
  • Shivani Saini,
  • Dolly Kumari,
  • Sanjai Singh and
  • Jost Adam

Beilstein J. Nanotechnol. 2024, 15, 1153–1169, doi:10.3762/bjnano.15.94

Graphical Abstract
  • coefficient and a high dielectric constant inspired the design of a monolayer Ge2Se2-based solar cell, exhibiting a high open circuit voltage of Voc = 1.11 V, a fill factor of 87.66%, and more than 28% power conversion efficiency at room temperature. Our findings advocate monolayer Ge2Se2 for various
  • wavelength are summarized in Figure 5, depicting the dielectric function εr (real and imaginary parts) and the refractive index n for monolayer Ge2Se2. The real and imaginary components of the dielectric function correspond to dispersive and absorption effects of the material. We observe that the
  • investigated structure exhibits strongly anisotropic optical properties for which the parametric values depend on the direction of the chosen plane. Dielectric function and absorption coefficient The static dielectric constants (real part of εr at ω = 0), along the in-plane (XX) and out-of-plane (ZZ) direction
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Published 11 Sep 2024

Unveiling the potential of alginate-based nanomaterials in sensing technology and smart delivery applications

  • Shakhzodjon Uzokboev,
  • Khojimukhammad Akhmadbekov,
  • Ra’no Nuritdinova,
  • Salah M. Tawfik and
  • Yong-Ill Lee

Beilstein J. Nanotechnol. 2024, 15, 1077–1104, doi:10.3762/bjnano.15.88

Graphical Abstract
  • ]. The polymer film’s soil moisture sensing capabilities were proved by measuring the dielectric constant of the polymer with soil samples containing low and high moisture (Figure 7). According to the results, the polymer film has excellent moisture sensing characteristics at frequencies as low as a few
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Published 22 Aug 2024

Signal generation in dynamic interferometric displacement detection

  • Knarik Khachatryan,
  • Simon Anter,
  • Michael Reichling and
  • Alexander von Schmidsfeld

Beilstein J. Nanotechnol. 2024, 15, 1070–1076, doi:10.3762/bjnano.15.87

Graphical Abstract
  • a Michelson interferometer. Experiments reported here are performed with the dielectric/vacuum interface of the bare fiber end acting as the first mirror and a metal-coated silicon cantilever as the second mirror. We keep the fiber–cantilever distance d always large enough to work in the Michelson
  • beams with almost identical power. The first part is directed to a power meter for control purposes, while the second part is guided to the interferometer in the UHV [11]. The fiber end in the interferometer is carefully cleaved to achieve high optical quality for the dielectric/vacuum interface having
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Published 20 Aug 2024

Recent progress on field-effect transistor-based biosensors: device perspective

  • Billel Smaani,
  • Fares Nafa,
  • Mohamed Salah Benlatrech,
  • Ismahan Mahdi,
  • Hamza Akroum,
  • Mohamed walid Azizi,
  • Khaled Harrar and
  • Sayan Kanungo

Beilstein J. Nanotechnol. 2024, 15, 977–994, doi:10.3762/bjnano.15.80

Graphical Abstract
  • FET-based biosensors. Finally, this article proposes intriguing avenues for further research on the topology of FET-based biosensors. Keywords: biomolecule detection; biosensors; charge modulation; dielectric modulation; field-effect transistor; Review 1 Introduction In recent years, biosensor
  • is known as dielectric modulation, where a nanoscale gap cavity is introduced in either the gate metal or gate insulator region. The biomolecules are immobilized in this cavity region functionalized with bioreceptor elements, where the presence of the specific target biomolecule alters the effective
  • dielectric constant inside the cavity resulting in a gating effect modulation and subsequent alteration in channel conductivity. This leads to a change in both threshold voltage and drain current, manifesting the presence of target biomolecules in the cavity, and the corresponding sensitivity is defined
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Published 06 Aug 2024

Electrospun nanofibers: building blocks for the repair of bone tissue

  • Tuğrul Mert Serim,
  • Gülin Amasya,
  • Tuğba Eren-Böncü,
  • Ceyda Tuba Şengel-Türk and
  • Ayşe Nurten Özdemir

Beilstein J. Nanotechnol. 2024, 15, 941–953, doi:10.3762/bjnano.15.77

Graphical Abstract
  • , concentration and molecular weight of the polymer, solvent or solvent mixture, surface tension, conductivity, dielectric constant, and environmental parameters are parameters that must be optimized in the electrospinning process. Voltage Voltage is the parameter that most affects the shape of the droplet from
  • fewer beads are formed [79]. Dielectric constant The dielectric constant refers to the ability of a substance to hold an electric charge in the region where an electric field is applied. The dielectric constant of a polymer liquid mainly depends on the solvent used. For the electrospinning process, the
  • dielectric constant must be high enough [74][75]. With an increase in dielectric constant fewer beads and smaller fiber diameters are formed [80]. Environmental parameters Temperature Temperature affects the viscosity and spinnability of polymer liquids and the thickness of the collected fiber mats
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Published 25 Jul 2024

Exploring surface charge dynamics: implications for AFM height measurements in 2D materials

  • Mario Navarro-Rodriguez,
  • Andres M. Somoza and
  • Elisa Palacios-Lidon

Beilstein J. Nanotechnol. 2024, 15, 767–780, doi:10.3762/bjnano.15.64

Graphical Abstract
  • Equation 8 is entirely a consequence of a non-negligible σs; if we set σs = 0, the time evolution cancels, and we recover the expected solution for a dielectric interface. When the tip oscillates or an AC voltage is applied, the oscillating electric field produces Joule dissipation at the surface as well
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Published 01 Jul 2024

Level set simulation of focused ion beam sputtering of a multilayer substrate

  • Alexander V. Rumyantsev,
  • Nikolai I. Borgardt,
  • Roman L. Volkov and
  • Yuri A. Chaplygin

Beilstein J. Nanotechnol. 2024, 15, 733–742, doi:10.3762/bjnano.15.61

Graphical Abstract
  • semiconductor heterostructures [13]. Metal and dielectric layers can be used as hard masks for achieving high resolution and throughput of the FIB nanofabrication process [14]. Modification of integrated circuits [15] is an industrially relevant application of multilayer structure processing. Effective
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Published 24 Jun 2024

Reduced subthreshold swing in a vertical tunnel FET using a low-work-function live metal strip and a low-k material at the drain

  • Kalai Selvi Kanagarajan and
  • Dhanalakshmi Krishnan Sadhasivan

Beilstein J. Nanotechnol. 2024, 15, 713–718, doi:10.3762/bjnano.15.59

Graphical Abstract
  • research paper, a vertical tunnel field-effect transistor (TFET) structure containing a live metal strip and a material with low dielectric constant is designed, and its performance metrics are analyzed in detail. Low-k SiO2 is incorporated in the channel–drain region. A live molybdenum metal strip with
  • low work function is placed in a high-k HfO2 layer in the source–channel region. The device is examined by the parameters Ioff, subthreshold swing, threshold voltage, and Ion/Ioff ratio. The introduction of a live metal strip in the dielectric layer closer to the source–channel interface results in a
  • excellent improvement in TFETs, an on-current of 1.00 × 10−5 A/μm, an Ion/Ioff ratio of 7.14 × 1011, and a threshold voltage of 0.28 V. Keywords: dual low-work-function live strip (DLWLS); low-k dielectric spacer; low-work-function live strip (LWLS); Miller capacitance; molybdenum; subthreshold swing (SS
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Published 19 Jun 2024

Laser synthesis of nanoparticles in organic solvents – products, reactions, and perspectives

  • Theo Fromme,
  • Sven Reichenberger,
  • Katharine M. Tibbetts and
  • Stephan Barcikowski

Beilstein J. Nanotechnol. 2024, 15, 638–663, doi:10.3762/bjnano.15.54

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  • spectra at long pulse durations and high irradiance [84]. This approach provides the essential understanding of the dependence of electron energy spectra on laser pulse duration, wavelength, and irradiance, which opens pathways for inducing energy-specific molecular modifications in dielectric media, such
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Published 05 Jun 2024

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

  • Gabriela Lewińska,
  • Piotr Jeleń,
  • Zofia Kucia,
  • Maciej Sitarz,
  • Łukasz Walczak,
  • Bartłomiej Szafraniak,
  • Jerzy Sanetra and
  • Konstanty W. Marszalek

Beilstein J. Nanotechnol. 2024, 15, 144–156, doi:10.3762/bjnano.15.14

Graphical Abstract
  • were applied to gold foils. A system equipped with a Solartron 1260A frequency response analyzer, a Solartron 1296A dielectric interface, and a supervisory computer was prepared to determine the impedance parameters of the obtained structures. The impedance characteristics of the obtained samples were
  • (point by point). The layer under consideration was first pure quantum dots and then a ternary system with PC71BM and P3HT. The refractive index (n) of the quantum dots thin film and the extinction coefficient (k) were estimated using the Lorentz model modified by Tauc. The complex dielectric function is
  • related to the complex refractive index n by the equation in the Tauc–Lorentz model: where ε1, ε2 are, respectively, the real and imaginary parts of the dielectric function, n is the refractive index, and k is the extinction coefficient. The real part of the Tauc–Lorentz dielectric function is given as
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Published 02 Feb 2024

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

  • Leonid S. Revin,
  • Dmitry A. Pimanov,
  • Alexander V. Chiginev,
  • Anton V. Blagodatkin,
  • Viktor O. Zbrozhek,
  • Andrey V. Samartsev,
  • Anastasia N. Orlova,
  • Dmitry V. Masterov,
  • Alexey E. Parafin,
  • Victoria Yu. Safonova,
  • Anna V. Gordeeva,
  • Andrey L. Pankratov,
  • Leonid S. Kuzmin,
  • Anatolie S. Sidorenko,
  • Silvia Masi and
  • Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

Graphical Abstract
  • /20 nm was deposited with an electron-beam evaporation machine. After lift-off, a double layer of MMA and ARP electron resist was deposited, which is necessary to form an aluminum oxide dielectric layer without breaking the vacuum. Then the electron lithography was made, but the resist was not
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Published 04 Jan 2024

A combined gas-phase dissociative ionization, dissociative electron attachment and deposition study on the potential FEBID precursor [Au(CH3)2Cl]2

  • Elif Bilgilisoy,
  • Ali Kamali,
  • Thomas Xaver Gentner,
  • Gerd Ballmann,
  • Sjoerd Harder,
  • Hans-Peter Steinrück,
  • Hubertus Marbach and
  • Oddur Ingólfsson

Beilstein J. Nanotechnol. 2023, 14, 1178–1199, doi:10.3762/bjnano.14.98

Graphical Abstract
  • ; quantum chemical calculation; ultrahigh vacuum; Introduction In recent years, gold nanostructures have received much attention owing to their dielectric properties [1], their biocompatibility [2], and their electrical properties [3][4], which enable a multitude of exciting applications in the field of
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Published 06 Dec 2023

A multi-resistance wide-range calibration sample for conductive probe atomic force microscopy measurements

  • François Piquemal,
  • Khaled Kaja,
  • Pascal Chrétien,
  • José Morán-Meza,
  • Frédéric Houzé,
  • Christian Ulysse and
  • Abdelmounaim Harouri

Beilstein J. Nanotechnol. 2023, 14, 1141–1148, doi:10.3762/bjnano.14.94

Graphical Abstract
  • versatility and high resolution in probing the local conductivity of materials, C-AFM has been extensively used in studying semiconductors [6][7], two-dimensional materials [8][9][10], memristive devices [11][12][13][14][15], photoelectric systems [16][17][18], dielectric films [19][20][21][22][23], molecular
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Published 22 Nov 2023

Nanoarchitectonics of photothermal materials to enhance the sensitivity of lateral flow assays

  • Elangovan Sarathkumar,
  • Rajasekharan S. Anjana and
  • Ramapurath S. Jayasree

Beilstein J. Nanotechnol. 2023, 14, 988–1003, doi:10.3762/bjnano.14.82

Graphical Abstract
  • LSPR effect highly depends on size, shape, composition, interparticle distance, dielectric constant, and surrounding medium of the particles [36][37]. While Pt, Ag, and Au particles all exhibit photothermal properties, Au nanoparticles are commonly used for photothermal applications. By changing the
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Published 04 Oct 2023

Silver-based SERS substrates fabricated using a 3D printed microfluidic device

  • Phommachith Sonexai,
  • Minh Van Nguyen,
  • Bui The Huy and
  • Yong-Ill Lee

Beilstein J. Nanotechnol. 2023, 14, 793–803, doi:10.3762/bjnano.14.65

Graphical Abstract
  • ], porous aluminum oxide [38], and semiconductors [39] have been reported. Dielectric and semiconductor substrates, such as ZnO nanowires, silicon nanowires, and porous silicon (PS), are particularly popular because of their larger contribution to the amplification of the Raman signal and longer shelf life
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Published 21 Jul 2023

Humidity-dependent electrical performance of CuO nanowire networks studied by electrochemical impedance spectroscopy

  • Jelena Kosmaca,
  • Juris Katkevics,
  • Jana Andzane,
  • Raitis Sondors,
  • Liga Jasulaneca,
  • Raimonds Meija,
  • Kiryl Niherysh,
  • Yelyzaveta Rublova and
  • Donats Erts

Beilstein J. Nanotechnol. 2023, 14, 683–691, doi:10.3762/bjnano.14.54

Graphical Abstract
  • dependence of log Z on log f in the whole frequency range (Figure 2c) and the phase angle value of ca. 80° in the frequency range of 1–1000 Hz (Figure 2d) indicate that the electrochemical processes on the surface of the sample at RH < 50% result in a capacitive behaviour with good dielectric properties. The
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Published 05 Jun 2023

Investigations on the optical forces from three mainstream optical resonances in all-dielectric nanostructure arrays

  • Guangdong Wang and
  • Zhanghua Han

Beilstein J. Nanotechnol. 2023, 14, 674–682, doi:10.3762/bjnano.14.53

Graphical Abstract
  • within the confined fields of three optical resonances supported by all-dielectric nanostructure arrays, including toroidal dipole (TD), anapoles, and quasi-bound states in continuum (quasi-BIC) resonances. By elaborately designing the geometry of a slotted-disk array, three different resonances can be
  • large contrast in the optical forces generated with these resonances is attributed to a higher electromagnetic field enhancement provided by the quasi-BIC. These results suggest that the quasi-BIC resonance is preferred when one employs all-dielectric nanostructure arrays for the trapping and
  • manipulation of nanoparticles by optical forces. It is important to use low-power lasers to achieve efficient trapping and avoid any harmful heating effects. Keywords: all-dielectric nanostructures; anapole; optical force; quasi-bound states in the continuum; toroidal dipole; Introduction Optical forces have
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Published 02 Jun 2023

ZnO-decorated SiC@C hybrids with strong electromagnetic absorption

  • Liqun Duan,
  • Zhiqian Yang,
  • Yilu Xia,
  • Xiaoqing Dai,
  • Jian’an Wu and
  • Minqian Sun

Beilstein J. Nanotechnol. 2023, 14, 565–573, doi:10.3762/bjnano.14.47

Graphical Abstract
  • that crystalline ZnO particles adhere to the surface of amorphous carbon, and the ZnO content increases as a function of a dosage of ZnNO3·6H2O. The as-prepared SiC@C-ZnO hybrids exhibit effective electromagnetic absorption, which is related to a synergy effect of different dielectric loss processes
  • mm). The excellent properties of the materials suggest great prospect as electromagnetic absorbers. Keywords: carbon; dielectric; electromagnetic absorption; SiC nanowires; ZnO; Introduction With increasing functionality of electronic devices, the widening of the working frequency bands, and the
  • stability, chemical corrosion resistance, and high strength. Hence, it has received a lot of attention [5][6][7]. Because of the high resistivity and the low dielectric parameters of traditionally prepared SiC, its EM absorption is poor [8]. According to existing literature reports, the electromagnetic
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Published 04 May 2023

Carbon nanotube-cellulose ink for rapid solvent identification

  • Tiago Amarante,
  • Thiago H. R. Cunha,
  • Claudio Laudares,
  • Ana P. M. Barboza,
  • Ana Carolina dos Santos,
  • Cíntia L. Pereira,
  • Vinicius Ornelas,
  • Bernardo R. A. Neves,
  • André S. Ferlauto and
  • Rodrigo G. Lacerda

Beilstein J. Nanotechnol. 2023, 14, 535–543, doi:10.3762/bjnano.14.44

Graphical Abstract
  • two important properties of the liquids, namely dielectric constant and vapor pressure, on the transduction of the MFC-MWCNT sensors. These results were corroborated by independent heat flow measurements (thermogravimetric analysis). The proposed MFC-MWCNT sensor platform may help paving the way to
  • mechanism of polymer composites with physicochemical characteristics such as dielectric constant, specific heat, and vapor pressure [25][56][57]. Our ink-based devices could extract those characteristics even from unknown samples and mixtures. Finally, test analysis using principal component analysis (PCA
  • ) with physicochemical properties of the organic solvents (vapor pressure and dielectric constant) [63][64]. Guided by previous studies that show the electrical response is due to the swelling of CPCs [25][56][57], we found that the maximum value in the Gain curve (max) is proportional to the dielectric
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Published 26 Apr 2023

Plasmonic nanotechnology for photothermal applications – an evaluation

  • A. R. Indhu,
  • L. Keerthana and
  • Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

Graphical Abstract
  • arrival at the expression for the LSPR frequency of a free electron cloud (as is typically assumed to be present in metals) starts with the relations between the dielectric displacement (D) of the electron gas in relation to the incident electric field (E) which it is [38] subjected to, given by wherein P
  • is the polarization density. P can be arrived at by solving the equation of motion for a single electron as Hence the expression relating the dielectric displacement (D) and the external electric field can be obtained as where is the natural frequency of oscillation of the electron cloud. Comparing
  • product of ωτ, where τ is the relaxation time of the free electron gas) is much higher than unity, thus leading to an approximation that there is no damping. Hence ignoring the damping term in Equation 5, we get It follows also that under plasmon resonance conditions ε1 < −εm, εm is the dielectric
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Published 27 Mar 2023

Quasi-guided modes resulting from the band folding effect in a photonic crystal slab for enhanced interactions of matters with free-space radiations

  • Kaili Sun,
  • Yangjian Cai,
  • Uriel Levy and
  • Zhanghua Han

Beilstein J. Nanotechnol. 2023, 14, 322–328, doi:10.3762/bjnano.14.27

Graphical Abstract
  • are introduced into large-scale periodic structures [1]. Extremely high Q-factors can be achieved thanks to the bandgap associated with the periodic structure, which prevents the leakage of radiation into the surrounding environment. Whispering gallery modes supported by dielectric spheres or
  • . Plasmonic nanoantennas [3], although with relatively low Q-factors resulting from material dissipation, still provide a large level of field enhancement due to the deep-subwavelength level of mode confinement. As new alternatives to plasmonic nanostructures, all-dielectric nanostructures supporting Mie
  • have been demonstrated in all aspects of light–matter interactions, ranging from optical generation [6], propagation [7], nonlinear processes [8] to signal detection [9] and collection, to name a few. Although QBIC resonances in all-dielectric nanostructures have become a popular and mainstream
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Published 06 Mar 2023

Bismuth-based nanostructured photocatalysts for the remediation of antibiotics and organic dyes

  • Akeem Adeyemi Oladipo and
  • Faisal Suleiman Mustafa

Beilstein J. Nanotechnol. 2023, 14, 291–321, doi:10.3762/bjnano.14.26

Graphical Abstract
  • photocatalytic activity [101][102][103][104]. Bi2WO6 has an orthorhombic structure, a high Curie temperature of about 900 °C, and a narrow bandgap of 2.6–2.8 eV [103]. Other desirable physical and chemical characteristics of Bi2WO6 include comparatively low toxicity, piezoelectricity, non-linear dielectric
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Published 03 Mar 2023

Concentration-dependent photothermal conversion efficiency of gold nanoparticles under near-infrared laser and broadband irradiation

  • Vikas,
  • Raj Kumar and
  • Sanjeev Soni

Beilstein J. Nanotechnol. 2023, 14, 205–217, doi:10.3762/bjnano.14.20

Graphical Abstract
  • ]. Localized heat generation through GNPs under irradiation can be used for hyperthermia treatment of tumors, termed plasmonic photothermal therapy (PPTT) [7][8][9][10][11]. The net temperature rise of a GNP-containing medium highly depends on shape and size of the GNPs, the dielectric constant of the medium
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Published 06 Feb 2023

High–low Kelvin probe force spectroscopy for measuring the interface state density

  • Ryo Izumi,
  • Masato Miyazaki,
  • Yan Jun Li and
  • Yasuhiro Sugawara

Beilstein J. Nanotechnol. 2023, 14, 175–189, doi:10.3762/bjnano.14.18

Graphical Abstract
  • on the semiconductor surface and ε0 is the dielectric constant of vacuum. A bias voltage Vdc + Vac·cos 2πft is applied between the tip and the semiconductor sample, where Vdc, Vac, and f are the DC bias voltage, amplitude of the AC bias voltage, and modulation frequency of the AC bias voltage
  • dielectric constant. LD is the Debye length for majority carriers (electrons), which characterizes the change in the potential inside the semiconductor. kB, T and e are the Boltzmann constant, absolute temperature, and elementary charge (e > 0), respectively. Since the applied voltage V is divided between
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Published 31 Jan 2023
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