An analytical approach to evaluate the performance of graphene and carbon nanotubes for NH₃ gas sensor applications

• Elnaz Akbari,
• Vijay K. Arora,
• Aria Enzevaee,
• Mohamad. T. Ahmadi,
• Mehdi Saeidmanesh,
• Mohsen Khaledian,
• Hediyeh Karimi and
• Rubiyah Yusof

Beilstein J. Nanotechnol. 2014, 5, 726–734, doi:10.3762/bjnano.5.85

• the bonding characteristics between these molecules and the CNT [33][34]. It is always important to obtain p-type and/or n-type semiconducting CNT to incorporate them in a complementary logic. A p–n junction is a result of this complementarity. n-Type and p-type nanoscale field effect transistors can

Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

• Cathy Bugot,
• Nathanaëlle Schneider,
• Daniel Lincot and
• Frédérique Donsanti

Beilstein J. Nanotechnol. 2013, 4, 750–757, doi:10.3762/bjnano.4.85

• substrates in 2013. The best efficiencies were obtained by using cadmium sulfide (CdS) as buffer layer in solar cells with a glass/Mo/CIGS/CdS/i-ZnO/ZnO:Al stack. The buffer layer is an n-type semiconductor that forms the p–n junction with the p-type CIGS absorber, and also modifies the CIGS surface

Near-field effects and energy transfer in hybrid metal-oxide nanostructures

• Ulrich Herr,
• Barat Achinuq,
• Cahit Benel,
• Giorgos Papageorgiou,
• Manuel Goncalves,
• Johannes Boneberg,
• Paul Leiderer,
• Paul Ziemann,
• Peter Marek and
• Horst Hahn

Beilstein J. Nanotechnol. 2013, 4, 306–317, doi:10.3762/bjnano.4.34

• p-n junction for separating electrons and holes generated by photon absorption, these cells are based on the very different mobility of electrons and holes. The electrons are injected into the conduction band of nanostructured TiO2, where the nanostructure provides a sufficient contact area between