Synthesis and applications of carbon nanomaterials for energy generation and storage

• Marco Notarianni,
• Jinzhang Liu,
• Kristy Vernon and
• Nunzio Motta

Beilstein J. Nanotechnol. 2016, 7, 149–196, doi:10.3762/bjnano.7.17

• silicon carbide (SiC) has also been extensively explored as it results in wafer-scale growth. Additionally, SiC is an excellent substrate for many electronics applications, avoiding the need to transfer to another substrate. High-quality graphene with a controlled thickness and a specific crystallographic

Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

• Urs Gysin,
• Thilo Glatzel,
• Thomas Schmölzer,
• Adolf Schöner,
• Sergey Reshanov,
• Holger Bartolf and
• Ernst Meyer

Beilstein J. Nanotechnol. 2015, 6, 2485–2497, doi:10.3762/bjnano.6.258

• ) measurements before and after sputtering of a copper alloy with chromium grains used as electrical contact surface in ultra-high power switches. In addition, we discuss KPFM measurements on cross sections of cleaved silicon carbide structures: a calibration layer sample and a power rectifier. To demonstrate

• the benefit of surface photo voltage measurements, we analysed the contact potential difference of a silicon carbide p/n-junction under illumination. Keywords: copper alloy; electrostatic force microscopy; high-voltage device; Kelvin probe force microscopy; silicon carbide (SiC); surface photo

• remove the oxide layer. Second, two different silicon carbide (SiC) devices are analysed and discussed. A calibration layer structure containing precisely defined p/n-interfaces is used to elaborate the challenges associated to KPFM and SPV measurements on semiconducting surfaces. Furthermore, a complex

Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature

• Mykola Telychko,
• Jan Berger,
• Zsolt Majzik,
• Pavel Jelínek and
• Martin Švec

Beilstein J. Nanotechnol. 2015, 6, 901–906, doi:10.3762/bjnano.6.93

• hinders applications of epitaxial graphene in the nanoelectronics [1]. The two main methods of epitaxial graphene growth are chemical vapor deposition (CVD) on metal surfaces [2] and annealing of silicon carbide (SiC) [3]. The large conductivity of metal substrates leaves graphene on metals as model-only

Low-cost formation of bulk and localized polymer-derived carbon nanodomains from polydimethylsiloxane

• Juan Carlos Castro Alcántara,
• Mariana Cerda Zorrilla,
• Lucia Cabriales,
• Luis Manuel León Rossano and
• Mathieu Hautefeuille

Beilstein J. Nanotechnol. 2015, 6, 744–748, doi:10.3762/bjnano.6.76

• may then be obtained according to the desired application and nanodomains such as carbon nanotubes and nanowires, silicon carbide (SiC) and SiC/SiO2 nanofibres have also been recently produced [2][3]. Typically, the use of special fillers and high temperatures of 1000 °C or greater are critical for

X-ray photoelectron spectroscopy of graphitic carbon nanomaterials doped with heteroatoms

• Toma Susi,
• Thomas Pichler and
• Paola Ayala

Beilstein J. Nanotechnol. 2015, 6, 177–192, doi:10.3762/bjnano.6.17

• Rajasekaran et al. [77] found no difference between single- and few-layer graphene (both measured at 284.0 eV). On the other hand, Emtsev et al. [64] and Hibino et al. [73] measured the C 1s energy of mono- to few-layer graphene epitaxial on silicon carbide as a function of the number of layers, and found

Materials and characterization techniques for high-temperature polymer electrolyte membrane fuel cells

• Roswitha Zeis

Beilstein J. Nanotechnol. 2015, 6, 68–83, doi:10.3762/bjnano.6.8

• based on phosphoric-acid-doped polybenzimidazole membranes shares many common features with the classical phosphoric acid fuel cell (PAFC), which also utilizes phosphoric acid as the electrolyte. Unlike the electrolyte system used in a PAFC, silicon carbide (SiC) soaked in acid, the acid-doped PBI

Cathode lens spectromicroscopy: methodology and applications

• T. O. Menteş,
• G. Zamborlini,
• A. Sala and
• A. Locatelli

Beilstein J. Nanotechnol. 2014, 5, 1873–1886, doi:10.3762/bjnano.5.198

• Elettra. The bulk of this work is dedicated to applications of the SPELEEM technique. We put special emphasis on graphene, which has been extensively studied by using cathode lens microscopy, LEEM in particular, with numerous studies of epitaxial graphene grown on a variety of transition metal and silicon

• carbide supports. These microscopy experiments have been carried out by using well-established methodologies, which were formerly developed for the analysis of ultra-thin metal films on single crystal surfaces [6]. These methods were soon adapted to the needs of the rising research field of graphene

En route to controlled catalytic CVD synthesis of densely packed and vertically aligned nitrogen-doped carbon nanotube arrays

• Slawomir Boncel,
• Sebastian W. Pattinson,
• Valérie Geiser,
• Milo S. P. Shaffer and
• Krzysztof K. K. Koziol

Beilstein J. Nanotechnol. 2014, 5, 219–233, doi:10.3762/bjnano.5.24

• and iron carbide. As XRD analysis revealed these particles were not oxidized because of the shielding from the carbon shell. The particle at the growth surface is an active catalyst particle (‘base’ growth mechanism) [70] and it is an iron silicon carbide phase. In case of N-CNTs, the catalyst

• growth of nanotubes and mainly carbon diffusion through the metal particle. The particle at the base (growth substrate) of the nanotube is likely to be iron silicon carbide and iron silicon oxide since it was in the contact with the silica quartz substrate. In the nitrogen-assisted growth of nanotubes

Surface passivation and optical characterization of Al₂O₃/a-SiC_x stacks on c-Si substrates

• Gema López,
• Pablo R. Ortega,
• Cristóbal Voz,
• Isidro Martín,
• Mónica Colina,
• Anna B. Morales,
• Albert Orpella and
• Ramón Alcubilla

Beilstein J. Nanotechnol. 2013, 4, 726–731, doi:10.3762/bjnano.4.82

• study the surface passivation of aluminum oxide/amorphous silicon carbide (Al2O3/a-SiCx) stacks on both p-type and n-type crystalline silicon (c-Si) substrates as well as the optical characterization of these stacks. Al2O3 films of different thicknesses were deposited by thermal atomic layer deposition

• ; silicon carbide (SiCx); surface passivation; Introduction Surface passivation has become a relevant issue in high efficiency crystalline silicon (c-Si) solar cells. The importance is even increasing as thinner wafers are used to reduce the cost for photovoltaic applications [1]. Aluminum oxide (Al2O3

• times of 38, 53, 73 and 137 min respectively). On top of these films, we deposited an amorphous silicon carbide (a-SiCx) film by PECVD that uses silane (SiH4) and methane (CH4) as precursor gases. The thicknesses of these a-SiCx films were 50, 40 and 25 nm, respectively (deposition times of 12 min 50

Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates

• Gabriele Fisichella,
• Salvatore Di Franco,
• Patrick Fiorenza,
• Raffaella Lo Nigro,
• Fabrizio Roccaforte,
• Cristina Tudisco,
• Guido G. Condorelli,
• Nicolò Piluso,
• Noemi Spartà,
• Stella Lo Verso,
• Corrado Accardi,
• Cristina Tringali,
• Sebastiano Ravesi and
• Filippo Giannazzo

Beilstein J. Nanotechnol. 2013, 4, 234–242, doi:10.3762/bjnano.4.24

• substrates [11]. As a matter of fact, future applications in large-scale electronics will require wafer-scale sheets of graphene that can be deterministically placed on a substrate. Other methods, such as epitaxial graphene growth by controlled graphitization of silicon carbide [12][13][14][15] and by

Graphite, graphene on SiC, and graphene nanoribbons: Calculated images with a numerical FM-AFM

• Fabien Castanié,
• Laurent Nony,
• Sébastien Gauthier and
• Xavier Bouju

Beilstein J. Nanotechnol. 2012, 3, 301–311, doi:10.3762/bjnano.3.34

• tackled FM-AFM image calculations of three types of graphitic structures, namely a graphite surface, a graphene sheet on a silicon carbide substrate with a Si-terminated surface, and finally, a graphene nanoribbon. We compared static structures, meaning that all the tip and sample atoms are kept frozen in

• community due to its fascinating prospects related to its particular electronic properties [69][70][71][72]. Many papers report on the growth process, which occurs mainly on metallic surfaces or on the silicon carbide surface, and on the characterization at the atomic scale by scanning tunneling microscopy

• small motions of the carbon atoms during the scanning. Even a tiny out-of-plane displacement of the graphite atoms (<0.05 Å) generates a variation of about 90 Hz due to the abrupt slope of the Δf(H) curve in the repulsive zone. Supported graphene on a silicon carbide substrate We consider here a

Formation of SiC nanoparticles in an atmospheric microwave plasma

• Martin Vennekamp,
• Ingolf Bauer,
• Matthias Groh,
• Evgeni Sperling,
• Susanne Ueberlein,
• Maksym Myndyk,
• Gerrit Mäder and
• Stefan Kaskel

Beilstein J. Nanotechnol. 2011, 2, 665–673, doi:10.3762/bjnano.2.71

• size is mainly influenced by the concentration of the precursor material in the plasma. Keywords: atmospheric microwave plasma; nanoparticle; SiC; Introduction Silicon Carbide (SiC) is a solid with various applications in materials science. It is used, e.g., as a wear-resistant material, as a

• 4 and 6 nm were synthesised; higher gas flows reduced the particle size. The overall smaller particle size of the nanoparticles in the previous work can be explained on the basis of our own findings by the lower pressure and the lower residence time of particles in the plasma. Conclusion Silicon

• carbide nanoparticles were produced by means of atmospheric-microwave-plasma induced decomposition of tetramethylsilane. The reaction conditions were varied to produce nanoparticles with a diameter from 7 to 20 nm depending on the reaction conditions. The main parameter controlling the size of the

Ceria/silicon carbide core–shell materials prepared by miniemulsion technique

• Lars Borchardt,
• Martin Oschatz,
• Robert Frind,
• Emanuel Kockrick,
• Martin R. Lohe,
• Christoph P. Hauser,
• Clemens K. Weiss,
• Katharina Landfester,
• Bernd Büchner and
• Stefan Kaskel

Beilstein J. Nanotechnol. 2011, 2, 638–644, doi:10.3762/bjnano.2.67

• . Furthermore, first catalytic tests were carried out by temperature programmed oxidation (TPO) of methane, and the activity of this material in lowering the onset temperature of methane combustion by 262 K was documented. Keywords: ceria; cerium dioxide; core shell; miniemulsion; oxycarbide; silicon carbide

• nanosized [26] silicon carbide are becoming increasingly interesting. There are several reports in literature showing that these materials are able to compete with supports such as alumina, silica or activated carbons, particularly in exothermic reactions [27][28][29][30]. In particular, the use of

• electron micrographs an average shell thickness of approximately 60 nm was obtained. Figure 4C illustrates the formation of these ceria shells on silicon carbide spheres. The cerium loading of these materials was increased up to 4 wt % Ce. Element mapping with EDX was used in order to verify the core–shell