Variations in the structure and reactivity of thioester functionalized self-assembled monolayers and their use for controlled surface modification

• Inbal Aped,
• Yacov Mazuz and
• Chaim N. Sukenik

Beilstein J. Nanotechnol. 2012, 3, 213–220, doi:10.3762/bjnano.3.24

• Inbal Aped Yacov Mazuz Chaim N. Sukenik Department of Chemistry and Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan, Israel 52900 10.3762/bjnano.3.24 Abstract Thioester-functionalized, siloxane-anchored, self-assembled monolayers provide a powerful tool for

Self-assembled monolayers and titanium dioxide: From surface patterning to potential applications

• Yaron Paz

Beilstein J. Nanotechnol. 2011, 2, 845–861, doi:10.3762/bjnano.2.94

• semiconductors (Si, GaN, InP, InGaAs) provide a unique way to alter the properties of a surface at will. This ability may be manifested through a variety of phenomena, among which are wetting phenomena (hydrophobicity, hydrophilicity and oleophobicity), electronic phenomena (from affecting band bending and work

• octadecyltrimethoxy silane (ODTMS) SAM on n-type GaN was attributed to a direct mechanism involving electron transfer from the HOMO level of the ODTMS to the valence band of the excited GaN [54]. As a consequence of this direct mechanism in gallium nitride, no remote degradation effects were observed on this

Zirconium nanoparticles prepared by the reduction of zirconium oxide using the RAPET method

• Michal Eshed,
• Swati Pol,
• Aharon Gedanken and
• Mahalingam Balasubramanian

Beilstein J. Nanotechnol. 2011, 2, 198–203, doi:10.3762/bjnano.2.23

• Michal Eshed Swati Pol Aharon Gedanken Mahalingam Balasubramanian Department of Chemistry, Kanbar Laboratory for Nanomaterials, Nanotechnology Research Center, Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan 52900, Israel Advanced Photon Source, Argonne National