Green synthesis of carbon dot structures from Rheum Ribes and Schottky diode fabrication

• Muhammed Taha Durmus and
• Ebru Bozkurt

Beilstein J. Nanotechnol. 2024, 15, 1369–1375, doi:10.3762/bjnano.15.110

• bandgap value of the CDs layer was 5.25 eV (Figure 6b). The current–voltage (I–V) characteristics of the Si/CDs/Au-based Schottky diode were investigated. I–V measurements of the CDs-based thin film device were carried out using a semiconductor parameter analyzer between −2.5 V and +2.5 V at room

• temperature (Figure 7). The interface between Au and CDs exhibited a nonlinear rectification behavior, indicating the formation of a Schottky diode [24]. The electrical properties of the Si/CDs/Au diode were determined using standard thermionic emission theory [25]. According to this theory, where n, IRs, V

• written as: where Φb is the effective barrier height, A is the device area, and A* is the Richardson constant (112 A·cm−2·K−2 for n-type Si [26]). Φb can be obtained from Equation 3. The value of n is calculated from the slope of semi-logarithmic I–V plots and is given as The ideality factor and the value

Out-of-plane polarization induces a picosecond photoresponse in rhombohedral stacked bilayer WSe₂

• Guixian Liu,
• Yufan Wang,
• Zhoujuan Xu,
• Zhouxiaosong Zeng,
• Lanyu Huang,
• Cuihuan Ge and
• Xiao Wang

Beilstein J. Nanotechnol. 2024, 15, 1362–1368, doi:10.3762/bjnano.15.109

• monolayers of WSe2 were aligned at a 0° angle to form the 3R phase. The graphene/3R WSe2/graphene heterojunctions were aligned and assembled onto a SiO2/Si substrate by the all-dry transfer method. Au/Cr (50/10 nm) electrodes were patterned using standard electron-beam lithography (EBL, Raith 150 Two) and

Investigation of Hf/Ti bilayers for the development of transition-edge sensor microcalorimeters

• Victoria Y. Safonova,
• Anna V. Gordeeva,
• Anton V. Blagodatkin,
• Dmitry A. Pimanov,
• Anton A. Yablokov and
• Andrey L. Pankratov

Beilstein J. Nanotechnol. 2024, 15, 1353–1361, doi:10.3762/bjnano.15.108

• [20]: where NEP is the noise equivalent power. The NEP is equal to the ratio of the total noise power spectral density IN to the ampere–watt sensitivity SI(ω). The total noise is composed of four components, namely, phonon noise , Nyquist TES noise , Nyquist external circuit noise , and the readout

The role of a tantalum interlayer in enhancing the properties of Fe₃O₄ thin films

• Hai Dang Ngo,
• Vo Doan Thanh Truong,
• Van Qui Le,
• Hoai Phuong Pham and
• Thi Kim Hang Pham

Beilstein J. Nanotechnol. 2024, 15, 1253–1259, doi:10.3762/bjnano.15.101

• promising applications. High-quality Fe3O4 thin films are a must to achieve the goals. In this report, Fe3O4 films on different substrates (SiO2/Si(100), MgO(100), and MgO/Ta/SiO2/Si(100)) were fabricated at room temperature with radio-frequency (RF) sputtering and annealed at 450 °C for 2 h. The

• morphological, structural, and magnetic properties of the deposited samples were characterized with atomic force microscopy, X-ray diffractometry, and vibrating sample magnetometry. The polycrystalline Fe3O4 film grown on MgO/Ta/SiO2/Si(100) presented very interesting morphology and structure characteristics

• in significant changes in the film’s characteristics [19][20]. Roy et al. conducted a study on polycrystalline Fe3O4 films on Si and SiO2/Si substrates. Their findings revealed that the value of the Gilbert damping parameter is significantly higher in Fe3O4/Si films compared to Fe3O4/SiO2/Si films

Dual-functionalized architecture enables stable and tumor cell-specific SiO₂NPs in complex biological fluids

• Iris Renata Sousa Ribeiro,
• Raquel Frenedoso da Silva,
• Romênia Ramos Domingues,
• Adriana Franco Paes Leme and
• Mateus Borba Cardoso

Beilstein J. Nanotechnol. 2024, 15, 1238–1252, doi:10.3762/bjnano.15.100

• -rays with charge compensation. Spectra were recorded in three distinct areas per sample with 400 μm spatial resolution, using 200 eV pass energy. High-resolution spectra for C 1s, N 1s, Si 2p, and S 2p were recorded with a resolution of 0.1 eV, using a pass energy of 40 eV. All spectra were analyzed

Photocatalytic methane oxidation over a TiO₂/SiNWs p–n junction catalyst at room temperature

• Qui Thanh Hoai Ta,
• Luan Minh Nguyen,
• Ngoc Hoi Nguyen,
• Phan Khanh Thinh Nguyen and
• Dai Hai Nguyen

Beilstein J. Nanotechnol. 2024, 15, 1132–1141, doi:10.3762/bjnano.15.92

• , Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Street, Cau Giay District, Hanoi 100000, Vietnam Department of Chemical and Biological Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Republic of Korea 10.3762/bjnano.15.92 Abstract Rapid

• tools is extremely essential and important [37][38][39]. Herein, we constructed a robust p–n junction catalyst by atomic layer deposition (ALD) of TiO2 thin films on a p-type SiNW substrate for enhancing the photocatalytic efficiency in CH4 oxidation. Pristine p-Si wafers have limited surface area and

• are highly susceptible to mechanical failure because of their brittle nature; in contrast, the etched SiNW arrays exhibit superior optical absorption and enhanced surface catalytic reaction properties. The intimate contact between 1D Si NWs and thin TiO2 layers reduces the recombination rate of

Local work function on graphene nanoribbons

• Daniel Rothhardt,
• Amina Kimouche,
• Tillmann Klamroth and
• Regina Hoffmann-Vogel

Beilstein J. Nanotechnol. 2024, 15, 1125–1131, doi:10.3762/bjnano.15.91

• cyclodehydrogenation and the formation of GNRs following [13][26]. The sample was introduced into our SFM attached to the same vacuum chamber, which was cooled down to 115 K using liquid nitrogen. Nanosensors Si tips (resonance frequency f0 = 158 kHz and longitudinal force constant cL = 45 N/m) and PtIr-coated tips

• applied to the tip or to the surface and on the polarity of the voltage applied. In order to ensure that the values and the polarity are compatible with previous results [20][27], the measured results were cross-checked on well-known surfaces, that is, Si(111) and Pb on Si(111). For the average taken over

• several measurements of the local potential difference (LCPD) shown below, we have mainly used PtIr tips and only a few Si tips since the results obtained in a previous work did not show any difference between metal-coated and non-coated Si-tips [27]. For this work, we assume that the non-coated Si-tips

Signal generation in dynamic interferometric displacement detection

• Knarik Khachatryan,
• Simon Anter,
• Michael Reichling and
• Alexander von Schmidsfeld

Beilstein J. Nanotechnol. 2024, 15, 1070–1076, doi:10.3762/bjnano.15.87

• a reflectivity of Rf = 0.04. The fourth end of the 3 dB coupler is connected to the detector, which is a photoreceiver (model HBPR-200M-30K-SI-FC, FEMTO Messtechnik, Berlin, Germany) converting the incoming light power into a voltage signal. The photoreceiver allows for high-sensitivity low-noise

Effect of wavelength and liquid on formation of Ag, Au, Ag/Au nanoparticles via picosecond laser ablation and SERS-based detection of DMMP

• Sree Satya Bharati Moram,
• Chandu Byram and
• Venugopal Rao Soma

Beilstein J. Nanotechnol. 2024, 15, 1054–1069, doi:10.3762/bjnano.15.86

• imaging due to the nonconductive nature of the FP substrate. FESEM energy-dispersive X-ray spectroscopy (EDX) mapping investigations were conducted on Ag/Au alloy NPs deposited on a Si substrate by drop casting 10 µL to avoid confusion in the data caused by the Au coating. Transmission electron microscopy

• confirms the occurrence of Ag, Au, Na, Cl, C, and O elements on the FP-AgAuN3 substrate, provided in Supporting Information File 1, Figure S4. To confirm the presence of Ag and Au in alloy NPs, an EDX mapping investigation was conducted on AgAuD3 NPs coated on a Si substrate. The color map image of a

Bolometric IR photoresponse based on a 3D micro-nano integrated CNT architecture

• Yasameen Al-Mafrachi,
• Sandeep Yadav,
• Sascha Preu,
• Jörg J. Schneider and
• Oktay Yilmazoglu

Beilstein J. Nanotechnol. 2024, 15, 1030–1040, doi:10.3762/bjnano.15.84

• 600 nm thick thermally oxidized SiO2 layer. The wafer was p-type and lightly boron-doped (Si-Mat, Silicon Materials). The substrate was thoroughly cleaned to remove impurities and contaminants to provide an ideal condition for CNT growth. Subsequently, an essential 30 nm aluminum oxide (AlOx) layer

•  1c was defined by overlapping two tantalum-based growth stop strips (150 nm, sputtering) with a rectangular Fe layer (2 nm, e-beam) on the Si wafer. Only regions with direct Fe/AlOx contact were active for CNT growth. This combination allows for the definition of any shape, offering versatility for

• CNT thermistor wall stabilized by complementary CNT block structures. Two strategically positioned metal electrodes on the Si substrate provide lateral contacts with the vertical CNT bolometer, facilitating effective resistance measurements. Importantly, this CNT structure exhibits remarkable thermal

Recent progress on field-effect transistor-based biosensors: device perspective

• Billel Smaani,
• Fares Nafa,
• Mohamed Salah Benlatrech,
• Ismahan Mahdi,
• Hamza Akroum,
• Mohamed walid Azizi,
• Khaled Harrar and
• Sayan Kanungo

Beilstein J. Nanotechnol. 2024, 15, 977–994, doi:10.3762/bjnano.15.80

• , such as double-gate TFET and Ge-source dielectric-modulated dual-gate TFET. 2.2.14 Staggered heterojunction vertical TFET-based biosensors. A GaSb/Si staggered heterojunction vertical tunnel FET (SHV TFET)-based biosensor has been analytically investigated and proposed for biological applications by

• tunnel field-effect transistor (TFET)-based biosensor with N+-pocket doping (PKD V TFET) has been proposed by Devi et al. [115] to enhance sensitivity in FET biosensors. This structure utilizes a 30% concentration of germanium in the Si/Ge N+ pocket and an N-type doping concentration of 1019 cm−3. In

Facile synthesis of Fe-based metal–organic frameworks from Fe₂O₃ nanoparticles and their application for CO₂/N₂ separation

• Van Nhieu Le,
• Hoai Duc Tran,
• Minh Tien Nguyen,
• Hai Bang Truong,
• Toan Minh Pham and
• Jinsoo Kim

Beilstein J. Nanotechnol. 2024, 15, 897–908, doi:10.3762/bjnano.15.74

• , Van Lang University, Ho Chi Minh City 700000, Vietnam Faculty of Applied Technology, School of Technology, Van Lang University, Ho Chi Minh City 700000, Vietnam Department of Chemical Engineering (Integrated Engineering), Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin-si, Gyeonggi-do

Water-assisted purification during electron beam-induced deposition of platinum and gold

• Cristiano Glessi,
• Fabian A. Polman and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 884–896, doi:10.3762/bjnano.15.73

• observed by a decrease of the Si content in the EDX spectrum, which indicates that the two processes occur at the same time (Supporting Information File 1, pp S14–S15). This effectively rules out the possibility of a post-deposition purification process, in which only the adsorbed Pt precursor is deposited

• through water-induced oxidation of the Si substrate, (ii) the Pt layer deposited in the patterned area (with a height of circa 60 nm), and (iii) the partially purified halo around the patterned area, which appears on top of the purified area in the lamella projection (Figure 7b, Supporting Information

• patterned area is seen, suggesting further oxidation of the Si substrate (similar to the observation presented in Figure 7) [57]. At the same time, at the perimeter of the BSE range, the formation of a dark halo is observed where the deposition of carbon from contaminants dominates the water-assisted

Intermixing of MoS₂ and WS₂ photocatalysts toward methylene blue photodegradation

• Maryam Al Qaydi,
• Nitul S. Rajput,
• Michael Lejeune,
• Abdellatif Bouchalkha,
• Mimoun El Marssi,
• Steevy Cordette,
• Chaouki Kasmi and
• Mustapha Jouiad

Beilstein J. Nanotechnol. 2024, 15, 817–829, doi:10.3762/bjnano.15.68

• SiO2/Si substrates as detailed elsewhere [27]. The fabricated samples were exfoliated in a mixed solution composed of 10 mL of ethanol, 10 mL acetone, and 10 mL of deionized water under sonication for 30 min as shown in Figure 12. Five to ten substrates loaded with the samples were used to prepare the

Electrospun polysuccinimide scaffolds containing different salts as potential wound dressing material

• Veronika Pálos,
• Krisztina S. Nagy,
• Rita Pázmány,
• Krisztina Juriga-Tóth,
• Bálint Budavári,
• Judit Domokos,
• Dóra Szabó,
• Ákos Zsembery and
• Angela Jedlovszky-Hajdu

Beilstein J. Nanotechnol. 2024, 15, 781–796, doi:10.3762/bjnano.15.65

• specific antibacterial areas were more extensive (20–60 cm2/mg) than we experienced for the same bacteria strains in the case of Sr(NO3)2 and Zn(O2CCH3)2 salt-containing scaffolds. These values were even higher when 5 mg/mL of paracetamol was added to them [22]. In another study, electrospun gelatin/Cs–Si

Exploring surface charge dynamics: implications for AFM height measurements in 2D materials

• Mario Navarro-Rodriguez,
• Andres M. Somoza and
• Elisa Palacios-Lidon

Beilstein J. Nanotechnol. 2024, 15, 767–780, doi:10.3762/bjnano.15.64

• SI.1 of Supporting Information File 1. Beyond their significance in various applications such as materials science, electronics, and biomedicine [70], these materials serve as benchmark systems for fundamental studies in 2D materials because of their markedly distinct properties [71]. Specifically

• conducted at RH < 10% to minimize any potential influence of this effect, although no significant differences were observed compared to measurements at 45% RH. Additionally, KPFM operation does not seem to play a crucial role in this specific situation (see Supporting Information File 1, section SI.2

• charging the flakes through bringing the tip into contact while applying an external bias voltage to the tip [78] (see Supporting Information File 1, section SI.3 for further details). Following the charging process, without activating the KPFM feedback (Figure 2a), there is a noticeable increase in the

Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties

• Monika Ozga,
• Eunika Zielony,
• Aleksandra Wierzbicka,
• Anna Wolska,
• Marcin Klepka,
• Marek Godlewski,
• Bogdan J. Kowalski and
• Bartłomiej S. Witkowski

Beilstein J. Nanotechnol. 2024, 15, 743–754, doi:10.3762/bjnano.15.62

• spectrum as there are four atoms in the primitive cell. Out of these modes, only the Ag and two Bg modes are Raman-active. The next three modes (Au + 2Bu) are acoustic, whereas six modes (3Au + 3Bu) are IR-active [56][57]. Figure 5 shows the Raman spectra measured for as-grown, 2× and 3× CuO/Si samples. A

• reference sample (Si ref.), which was a pure silicon wafer, was also studied for comparison (Figure 5A). Comparing the Raman spectra of CuO/Si samples with the spectrum of the Si reference sample, one can notice a dominating phonon mode at a frequency of 521 cm−1 originating from the silicon substrate [57

• the CuO-like phonon mode frequencies that have been documented by other authors [56][58][59][60]. Thus, the obtained results confirm the cupric phase of the copper oxide layer. After comparing the Raman spectra of all CuO/Si structures, it can be noticed that the 2× and 3× samples exhibit the best

Level set simulation of focused ion beam sputtering of a multilayer substrate

• Alexander V. Rumyantsev,
• Nikolai I. Borgardt,
• Roman L. Volkov and
• Yuri A. Chaplygin

Beilstein J. Nanotechnol. 2024, 15, 733–742, doi:10.3762/bjnano.15.61

• of them is the flux of sputtered particles. For a multilayer structure, it can be presented by the extension of the well-known expression [21] as where denotes the flux of sputtered atoms of the i-th material with i = 1 for SiO2 and i = 2 for Si. In the case considered, it is equal to where μi = [Yr

• computational grid. The experimental angular dependences of the sputtering yield [24] and YSi(θ) [34] were used for the calculations of Fsp,i with μi values of 0.15 for SiO2 (i =1) [24] and 0.3 for Si (i = 2) [35]. The function at t=0 was specified by the structure of the Si substrate covered by a SiO2 layer

• sputtered atoms and backscattered ions differed slightly for Si and SiO2, and an idea of the form of these distributions is given by the plots presented in [36]. Although the functions found by Monte Carlo simulations described the angular distribution of sputtered atoms more realistically, the

Elastic modulus of β-Ga₂O₃ nanowires measured by resonance and three-point bending techniques

• Annamarija Trausa,
• Sven Oras,
• Sergei Vlassov,
• Mikk Antsov,
• Tauno Tiirats,
• Andreas Kyritsakis,
• Boris Polyakov and
• Edgars Butanovs

Beilstein J. Nanotechnol. 2024, 15, 704–712, doi:10.3762/bjnano.15.58

• -Ga2O3 NW synthesis methods and detailed post-examination of their mechanical properties before considering their application in future nanoscale devices. Results For structural analysis of the as-grown NW arrays on Si(100)/SiO2 substrates, X-ray diffraction (XRD) measurements were conducted. The marked

• peaks are associated with monoclinic β-Ga2O3 (ICDD-PDF #41–1103), as indicated in Figure 1a, while the Bragg peak at around 33 degrees corresponds to the Si substrate (forbidden Si(200) reflection). Furthermore, transmission electron microscopy (TEM) was used to study the inner crystalline structure of

• pressure chemical vapour transport in a horizontal quartz tube reactor (18 mm inner diameter) according to the method reported in [2]. The process involved loading a ceramic boat with 0.15 g of Ga2O3 powder (99.99%, Alfa Aesar) at the centre of the quartz tube. Oxidised silicon wafers SiO2/Si (100) coated

AFM-IR investigation of thin PECVD SiO_x films on a polypropylene substrate in the surface-sensitive mode

• Hendrik Müller,
• Hartmut Stadler,
• Teresa de los Arcos,
• Adrian Keller and
• Guido Grundmeier

Beilstein J. Nanotechnol. 2024, 15, 603–611, doi:10.3762/bjnano.15.51

• level spectra, a Shirley type background was used. The Si 2p peak was fitted with doublet peaks with a Si 2p3/2-1/2 splitting of 0.6 eV [18]. Results and Discussion XPS analysis The XPS data in Figure 2 and Figure 3 show that the deposition of silicon oxide thin films was successful. In the survey

• nm SiOx layer, the C 1s is a mixture of adventitious carbon and the signal from the underlying polypropylene substrate. The core levels of O 1s, C 1s, and Si 2p are shown in Figure 2 and Figure 3. In the figures, the spectra are arbitrarily charge corrected by fixing the binding energy of the Si 2p

• Si 2p peaks. The O 1s–Si 2p distance is 429.6 eV for the 50 nm film and 429.9 eV for the 5 nm film. This is in good agreement with values found in the literature for the PECVD deposition of SiOx films from HMDSO/O2/Ar gas mixtures [21]. A comparison of the relative intensities of the O 1s and Si 2p

Stiffness calibration of qPlus sensors at low temperature through thermal noise measurements

• Laurent Nony,
• Sylvain Clair,
• Daniel Uehli,
• Aitziber Herrero,
• Jean-Marc Themlin,
• Andrea Campos,
• Franck Para,
• Alessandro Pioda and
• Christian Loppacher

Beilstein J. Nanotechnol. 2024, 15, 580–602, doi:10.3762/bjnano.15.50

• include the contribution of the tip. The qPlus sensor is assumed to be in thermal equilibrium at T = 9.8 K. The temperature is measured within the head of the microscope by a Si diode and readout by a Lakeshore 335 Controller. The microscope being in closed-cycle has been thermalized at that temperature

Directed growth of quinacridone chains on the vicinal Ag(35 1 1) surface

• Niklas Humberg,
• Lukas Grönwoldt and
• Moritz Sokolowski

Beilstein J. Nanotechnol. 2024, 15, 556–568, doi:10.3762/bjnano.15.48

• same time, the surface also exhibits flat areas with wide terraces of up to 300 Å in width. This can also be seen in the STM image. A similar type of step width distribution was also found for various other surfaces, for example, Cu(11n) [33] with n = 5, 9, 17, and Si(100) as well as Si(111) [34

On the additive artificial intelligence-based discovery of nanoparticle neurodegenerative disease drug delivery systems

• Shan He,
• Julen Segura Abarrategi,
• Harbil Bediaga,
• Sonia Arrasate and
• Humberto González-Díaz

Beilstein J. Nanotechnol. 2024, 15, 535–555, doi:10.3762/bjnano.15.47

• ) and n(cn4) = 16 coating agents (UC, PEG-Si(OMe)3, PVA, sodium citrate, 11-mercaptoundecanoic acid, PVP, propylamonium fragment, undecylazide fragment, CTAB, N,N,N-trimethyl-3(1-propene) ammonium fragment, potato starch, N-acetylcysteine, CMC-90, 2,3-dimercaptopropanesulfonate, 3

• fragment, and UAF = undecylazide fragment. The symbol UC = uncoated represents non-coated N2D3Ss. Interestingly, a high value of prediction involves PEG-Si(OMe)3 as NP coating with p(N2D3Sin)cdj.cnj = 0.80–0.99 for the majority of NDDs. Another important factor that may affect the value of probability is

• the type of NP. It appears that metal oxide compounds such as SiO2 and TiO2 along with PEG-Si(OMe)3NP coating for almost all NDDs are likely to be promising for further assays. Double metal oxide compounds such as CoFe2O4 and ZnFe2O4 obtained intermediate probability values p(N2D3Sin)cdj.cnj = 0.17

Electron-induced deposition using Fe(CO)₄MA and Fe(CO)₅ – effect of MA ligand and process conditions

• Hannah Boeckers,
• Atul Chaudhary,
• Petra Martinović,
• Amy V. Walker,
• Lisa McElwee-White and
• Petra Swiderek

Beilstein J. Nanotechnol. 2024, 15, 500–516, doi:10.3762/bjnano.15.45

• ) trifluoroacetylacetonate (Au(tfac)Me2) [16] or neopentasilane (Si5H12) [17] to produce Fe–Au alloy nanostructures and Fe–Si binary compounds, respectively. More recently, diiron nonacarbonyl (Fe2(CO)9) has received particular attention [5][6][18][19][20]. With this precursor and applying high beam energies, nanopillars

• from the complex. This has, for instance, been shown for the case of Cu(I)(hfac)VTMS (hfac = hexafluoroacetylacetonate, VTMS = vinyltrimethylsilane, H2C=CH-Si(CH3)3) [3][49]. Therefore, we explore herein the electron-induced decomposition of a novel Fe precursor with an olefin ligand and a reduced

Aero-ZnS prepared by physical vapor transport on three-dimensional networks of sacrificial ZnO microtetrapods

• Veaceslav Ursaki,
• Tudor Braniste,
• Victor Zalamai,
• Emil Rusu,
• Vladimir Ciobanu,
• Vadim Morari,
• Daniel Podgornii,
• Pier Carlo Ricci,
• Rainer Adelung and
• Ion Tiginyanu

Beilstein J. Nanotechnol. 2024, 15, 490–499, doi:10.3762/bjnano.15.44

• devices, and in other specific applications, such as electromagnetic interference shielding and microwave absorbing materials. Among inorganic porous materials, several groups predominate, such as metal halide perovskites (MHP) [1], Si and III–V semiconductors [2][3][4][5][6], chalcogenides [7][8][9], and

• selected to focus the light on the sample surface. The system calibration was performed on a monocrystalline Si wafer with the main peak measured at 521 cm−1. A 1200 gr/mm grating with a resolution of 1 cm−1 was utilized. SEM images of ZnS microtetrapods obtained from ZnO microtetrapods after a