Sublattice asymmetry of impurity doping in graphene: A review

• James A. Lawlor and
• Mauro S. Ferreira

Beilstein J. Nanotechnol. 2014, 5, 1210–1217, doi:10.3762/bjnano.5.133

• for synthesis of such graphene monolayers and detail theoretical efforts to explain the mechanisms responsible for the effect, before suggesting future research directions in this nascent field. Keywords: band gap; electronic transport; graphene; nitrogen doping; sublattice asymmetry; Review

Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates

• Gabriele Fisichella,
• Salvatore Di Franco,
• Patrick Fiorenza,
• Raffaella Lo Nigro,
• Fabrizio Roccaforte,
• Cristina Tudisco,
• Guido G. Condorelli,
• Nicolò Piluso,
• Noemi Spartà,
• Stella Lo Verso,
• Corrado Accardi,
• Cristina Tringali,
• Sebastiano Ravesi and
• Filippo Giannazzo

Beilstein J. Nanotechnol. 2013, 4, 234–242, doi:10.3762/bjnano.4.24

• graphene on SiO2 [22]. Both cracks and corrugations contribute to the degradation of the electronic transport properties in graphene [23]. Graphene transfer onto PEN In contrast to the case of virgin SiO2, which is naturally hydrophilic and requires proper treatments to be converted into a hydrophobic

• between the two materials. Results and Discussion Microscale electrical characterization The electronic transport properties of the large-area graphene transferred onto the two different substrates have been characterized on the macroscopic scale by electrical measurements on transmission line model (TLM

Functionalization of vertically aligned carbon nanotubes

• Eloise Van Hooijdonk,
• Carla Bittencourt,
• Rony Snyders and
• Jean-François Colomer

Beilstein J. Nanotechnol. 2013, 4, 129–152, doi:10.3762/bjnano.4.14

• parallel, they observed an exponential dependence of the resistance. No significant modification of the carrier concentration and tube–tube interaction was noticed. Considering that the electronic transport is driven by the localization mechanism (i.e., a localization of the electron states at the defect

Electronic and transport properties of kinked graphene

• Jesper Toft Rasmussen,
• Tue Gunst,
• Peter Bøggild,
• Antti-Pekka Jauho and
• Mads Brandbyge

Beilstein J. Nanotechnol. 2013, 4, 103–110, doi:10.3762/bjnano.4.12

• linear bends in graphene. We find a significant barrier lowering (≈15%) for realistic radii of curvature (≈20 Å) and that adsorption along the linear bend leads to a stable linear kink. We compute the electronic transport properties of individual and multiple kink lines, and demonstrate how these act as

• transport across the kink lines. We finally consider pseudo-ribbon-based heterostructures and propose that such structures present a novel approach for band gap engineering in nanostructured graphene. Keywords: adsorption and reactivity; curvature effects; DFT calculations; electronic transport; graphene

• nanoribbons; graphene nanostructuring; Introduction Nanostructures based on graphene have an enormous potential for applications. Especially in future electronic devices compatible with and extending silicon technology, due to the outstanding electronic transport properties of graphene [1]. However, it is

Revealing thermal effects in the electronic transport through irradiated atomic metal point contacts

• Bastian Kopp,
• Zhiwei Yi,
• Daniel Benner,
• Fang-Qing Xie,
• Christian Obermair,
• Thomas Schimmel,
• Johannes Boneberg,
• Paul Leiderer and
• Elke Scheer

Beilstein J. Nanotechnol. 2012, 3, 703–711, doi:10.3762/bjnano.3.80

• , Karlsruhe Institute of Technology (KIT), Campus South, Wolfgang-Gaede-Straße 1, 76131 Karlsruhe, Germany Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), Campus North, 76027 Karlsruhe, Germany 10.3762/bjnano.3.80 Abstract We report on the electronic transport through nanoscopic

• layer are the most prominent effects. Keywords: atom transistor; atomic contacts; cyclic voltammogram; electrochemically closed break junction; electronic transport; (Helmholtz) double layer; light-induced signals; temperature-induced changes; thermovoltage; Introduction Electronic transport on the

Focused electron beam induced deposition: A perspective

• Michael Huth,
• Fabrizio Porrati,
• Christian Schwalb,
• Marcel Winhold,
• Roland Sachser,
• Maja Dukic,
• Jonathan Adams and
• Georg Fantner

Beilstein J. Nanotechnol. 2012, 3, 597–619, doi:10.3762/bjnano.3.70

• dissociation. As a matter of fact, post-growth irradiation can be advantageously used for fine-tuning the electronic transport properties of FEBID structures, and this will be discussed in the context of nanogranular structures later in this review. In any case, the energy spectrum of the electrons that can

• molecular flux, keeping the Me3Pt(IV)CpMe molecular flux constant. Details concerning the absolute molecular flux values were not provided. The deposition parameters of 20 nm pitch and 1 μs dwell time were kept constant for all experiments. For the electronic transport measurements the structures were

• answer this question, we turn to some peculiarities observed in the transport-dependent conductivity of the FEBID samples. Electronic transport properties: Figure 7 shows the resistivity as a function of the Si/Pt ratio of the as-grown samples. Apparently, the resistivity drops with increasing Si content

Strong spin-filtering and spin-valve effects in a molecular V–C₆₀–V contact

• Mohammad Koleini and
• Mads Brandbyge

Beilstein J. Nanotechnol. 2012, 3, 589–596, doi:10.3762/bjnano.3.69

• and magnetic adatom on a Cu(111) surface using first-principles calculations. For the case of a vanadium tip/adatom, we demonstrate how spin coupling between the magnetic V atoms, mediated by the C60, can be observed in the electronic transport, which display a strong spin-filtering effect, allowing

• formation, while the C60 is placed on the tip [7]. Subsequently, it is possible to investigate the interactions between tip and sample via electronic transport measurements as tip and sample are brought into contact. STM also provides a powerful tool for investigating spin-transport in magnetic

Molecular-resolution imaging of pentacene on KCl(001)

• Julia L. Neff,
• Jan Götzen,
• Enhui Li,
• Michael Marz and
• Regina Hoffmann-Vogel

Beilstein J. Nanotechnol. 2012, 3, 186–191, doi:10.3762/bjnano.3.20

• causes a pronounced anisotropy of the electronic transport properties. Therefore, the electronic properties of pentacene are closely related to its structural order, and a precise control of the molecular packing and the crystalline orientation of thin films is of vital interest for the optimization of

Current-induced forces in mesoscopic systems: A scattering-matrix approach

• Niels Bode,
• Silvia Viola Kusminskiy,
• Reinhold Egger and
• Felix von Oppen

Beilstein J. Nanotechnol. 2012, 3, 144–162, doi:10.3762/bjnano.3.15

• mechanical vibrations and cause limit-cycle dynamics. Keywords: current-induced forces; electronic transport theory; nanoelectromechanical systems; scattering matrix; S-matrix; Introduction Scattering theory has proved to be a highly successful method for treating coherent transport in mesoscopic systems

• decouple, and which give rise to different experimental phenomena. On one side, when the electronic time scales are slow compared with the mechanical vibrations, drastic consequences can be observed for the electronic transport, such as side bands due to phonon-assisted tunneling [23][24] or the Frank

Lifetime analysis of individual-atom contacts and crossover to geometric-shell structures in unstrained silver nanowires

• Christian Obermair,
• Holger Kuhn and
• Thomas Schimmel

Beilstein J. Nanotechnol. 2011, 2, 740–745, doi:10.3762/bjnano.2.81

• electronic transport and the atomic structure of the nanocontacts. Results and Discussion Figure 1 shows a conductance histogram for electrochemically deposited silver contacts obtained from 21385 conductance levels in the range between 0.01 G0 and 7 G0 with level each lasting longer than at least 200 ms. In

Charge transport in a zinc–porphyrin single-molecule junction

• Mickael L. Perrin,
• Christian A. Martin,
• Ferry Prins,
• Ahson J. Shaikh,
• Rienk Eelkema,
• Jan H. van Esch,
• Jan M. van Ruitenbeek,
• Herre S. J. van der Zant and
• Diana Dulić

Beilstein J. Nanotechnol. 2011, 2, 714–719, doi:10.3762/bjnano.2.77

• transport; Introduction The break-junction method represents a popular choice to investigate the electronic transport through metal–molecule–metal junctions [1][2][3][4][5][6]. While repeatedly breaking and fusing two metallic electrodes, the low-bias conductance is monitored as a function of the electrode

• that within a change in the electrode displacement of 10 pm, the number of energy levels involved in the electronic transport as well as their exact energy drastically changed. A major jump of two orders of magnitude in the low-bias conductance was observed as well. This suggests an abrupt change in