Pure hydrogen low-temperature plasma exposure of HOPG and graphene: Graphane formation?

• Baran Eren,
• Dorothée Hug,
• Laurent Marot,
• Rémy Pawlak,
• Marcin Kisiel,
• Roland Steiner,
• Dominik M. Zumbühl and
• Ernst Meyer

Beilstein J. Nanotechnol. 2012, 3, 852–859, doi:10.3762/bjnano.3.96

• chemisorbed on the surface, and a small portion will be ionized (required energy Te: 13.6 eV). The atomic ion implantation may also hydrogenate the other side of the surface layer and even some other subsurface layers. The 3.5 eV plasma used in this work results in an ion impact energy (εi) of 12.6 eV on the

Nano-structuring, surface and bulk modification with a focused helium ion beam

• Daniel Fox,
• Yanhui Chen,
• Colm C. Faulkner and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2012, 3, 579–585, doi:10.3762/bjnano.3.67

• the lamella. The purpose of this exposure geometry was to produce a wedge shape of silicon within the lamella so that we could observe the minimum thickness dimensions which can be fabricated by HIM. It also allows us to analyze the subsurface modification effects due to helium ion implantation. All