Sequence-dependent electrical response of ssDNA-decorated carbon nanotube, field-effect transistors to dopamine

• Hari Krishna Salila Vijayalal Mohan,
• Jianing An and
• Lianxi Zheng

Beilstein J. Nanotechnol. 2014, 5, 2113–2121, doi:10.3762/bjnano.5.220

• of the ssDNA–DA complex containing bases G and A, which have better affinity to SWCNT [35], causes the charge traps formed by ssDNA–DA adducts to be in greater proximity to the nanotube surface, thus, increasing the hysteresis gap (+∆H). Anions such as UA are predominantly involved in hydrogen bond

Effect of channel length on the electrical response of carbon nanotube field-effect transistors to deoxyribonucleic acid hybridization

• Hari Krishna Salila Vijayalal Mohan,
• Jianing An,
• Yani Zhang,
• Chee How Wong and
• Lianxi Zheng

Beilstein J. Nanotechnol. 2014, 5, 2081–2091, doi:10.3762/bjnano.5.217

• between probe DNA and cDNA whereas the negative shift in Vfth implies electron transfer to the SWCNT by the negatively charged cDNA molecules as the possible mechanisms [27]. The increase in H is proportional to the number of charge traps formed by ds-DNA hybrids immobilized on SWCNT, which indicates the

• guanine and adenine bases [28][31]. Similarly, the shift in Vth to more positive values for the reverse sweep is an indicator of hole trapping by the cytosine and thymine bases [28][31]. Thus, the increase in charge traps in the channel region leads to an overall shift in Vth for forward and reverse

• . Similarly, the additional number of charge traps formed during hybridization increases along the length of the nanotube, thus, offering more trapping/detrapping sites leading to an increase in ΔH with L. Hence, ultra-long channel FETs exhibited greater charge transfer and charge trapping mechanisms, but the

Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide

• Domenico Melisi,
• Maria Angela Nitti,
• Marco Valentini,
• Antonio Valentini,
• Teresa Ligonzo,
• Giuseppe De Pascali and
• Marianna Ambrico

Beilstein J. Nanotechnol. 2014, 5, 1999–2006, doi:10.3762/bjnano.5.208

• linear dependence of the photocurrent on the light intensity is an important achievement in a photodetector. Nevertheless in such devices (either p-i-n or Schottky diodes) the value of the exponent γ depends not only on the intrinsic properties of the photoactive material (traps and recombination centres

Silicon and germanium nanocrystals: properties and characterization

• Ivana Capan,
• Alexandra Carvalho and
• José Coutinho

Beilstein J. Nanotechnol. 2014, 5, 1787–1794, doi:10.3762/bjnano.5.189

• interface-related traps cannot be neglected. The interface traps are located at the substrate/oxide-matrix interface (most commonly Si–SiO2) and at the NCs/oxide-matrix interface. Unlike the other traps located in the oxide matrix (fixed and mobile oxide charges), interface traps are in electrical

• to increase the density of the interface traps. However, most of the interface traps can be neutralized by low-temperature (about 450 °C) annealing with hydrogen or forming gas [24]. In general, the formation of Ge NC is much more complicated than that of Si NC because GeO2 is thermodynamically less

• simple MOS structure, with Ge NCs embedded in the SiO2 film deposited on a Si substrate. In order to check for the existence of the deep level traps coming from the Si/SiO2 interface, temperature dependent C–V measurements have been performed. The activation energy of the electron emission has been

From sticky to slippery: Biological and biologically-inspired adhesion and friction

• Stanislav N. Gorb and
• Kerstin Koch

Beilstein J. Nanotechnol. 2014, 5, 1450–1451, doi:10.3762/bjnano.5.157

• of cells, insect feet, snake skin, plant traps, and bird wings are just a few striking examples of a tremendous diversity of biological surfaces and systems with remarkable contact behavior about many of which our knowledge is limited compared to medically relevant biotribosystems. Since the 90s a

Insect attachment on crystalline bioinspired wax surfaces formed by alkanes of varying chain lengths

• Elena Gorb,
• Sandro Böhm,
• Nadine Jacky,
• Louis-Philippe Maier,
• Kirstin Dening,
• Sasha Pechook,
• Boaz Pokroy and
• Stanislav Gorb

Beilstein J. Nanotechnol. 2014, 5, 1031–1041, doi:10.3762/bjnano.5.116

• system and may serve as a defence mechanism against herbivores and nectar robbers or as a mechanism preventing the escape of insects from traps of carnivorous plants and kettle trap flowers. Plant surface features such as particular cell arrangements, shapes, and orientation, as well as the presence of

Photoactivation of luminescence in CdS nanocrystals

• Valentyn Smyntyna,
• Bogdan Semenenko,
• Valentyna Skobeeva and
• Nikolay Malushin

Beilstein J. Nanotechnol. 2014, 5, 355–359, doi:10.3762/bjnano.5.40

• influence of humid argon and oxygen on the photoinduced amplification of the photoluminescence intensity of CdSe/ZnS quantum dots of is presented. It is suggested that this effect is the result of solvation of the charged states of the surface traps. Two competing processes may occur during the irradiation

• concentration of water molecules. Thus, our results are consistent with the assumptions made in [5], in the sense that the effect of PFE is the result of photoactivation and stabilization of surface traps through adsorption of water molecules under conditions of high humidity. According to [1][18][19], the

AFM as an analysis tool for high-capacity sulfur cathodes for Li–S batteries

• Renate Hiesgen,
• Seniz Sörgel,
• Rémi Costa,
• Linus Carlé,
• Ines Galm,
• Natalia Cañas,
• Brigitta Pascucci and
• K. Andreas Friedrich

Beilstein J. Nanotechnol. 2013, 4, 611–624, doi:10.3762/bjnano.4.68

• use of highly ordered mesoporous carbon with a bimodal pore structure with a high specific area and a large pore volume is beneficial. It traps a part of the polysulfides for a certain time before release, thereby reduces the electrochemical irreversibility and can lead to a very high and stable

3D nano-structures for laser nano-manipulation

• Gediminas Seniutinas,
• Lorenzo Rosa,
• Gediminas Gervinskas,
• Etienne Brasselet and
• Saulius Juodkazis

Beilstein J. Nanotechnol. 2013, 4, 534–541, doi:10.3762/bjnano.4.62

• from the interaction with a focused laser beam [1]. Nano-focusing and light control, which are possible with metallic plasmonic structures, are very attractive to engineer optical traps, in order to accurately position and manipulate objects down to the nanometer-scale [2]. Plasmonic nano-antennas have

A look underneath the SiO₂/4H-SiC interface after N₂O thermal treatments

• Patrick Fiorenza,
• Filippo Giannazzo,
• Lukas K. Swanson,
• Alessia Frazzetto,
• Simona Lorenti,
• Mario S. Alessandrino and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2013, 4, 249–254, doi:10.3762/bjnano.4.26

• N2O have a beneficial effect on the SiO2 insulator and on the SiO2/4H-SiC interface due to the passivation of oxide defects and interface traps by the incorporated nitrogen, the impact of these thermal treatments on the electrical properties of the 4H-SiC substrate is still under debate. Recently

• be invoked to explain the better nitrogen incorporation during POA, leading to a more efficient passivation of interface traps and to a higher compensation of interfacial SiC. In fact, for a macroscopically stepped surface, the SiO2/SiC interface is not only formed on the basal plane (0001), but a

Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates

• Gabriele Fisichella,
• Salvatore Di Franco,
• Patrick Fiorenza,
• Raffaella Lo Nigro,
• Fabrizio Roccaforte,
• Cristina Tudisco,
• Guido G. Condorelli,
• Nicolò Piluso,
• Noemi Spartà,
• Stella Lo Verso,
• Corrado Accardi,
• Cristina Tringali,
• Sebastiano Ravesi and
• Filippo Giannazzo

Beilstein J. Nanotechnol. 2013, 4, 234–242, doi:10.3762/bjnano.4.24

• have been obtained. It is worth noting that the effect of traps at the graphene/SiO2 interface is not accounted for in the determination of μp from Equation 2. This approximation implies an overestimation of the hole density p, which is actually reduced with respect to the value induced by the field

• effect due to carrier trapping, and, consequently, an underestimation of the carrier mobility. Furthermore, the presence of charged traps at the graphene/substrate interface strongly affects the mobility in graphene due to Coulomb scattering [11][26], leading to a degradation with respect to the ideal

• value in the absence of interface traps. A similar macroscopic electrical characterization using TLM structures was performed also in CVD graphene transferred onto PEN. In this case, the sheet resistance and specific contact resistance only were measured, whereas an estimate of mobility and carrier

Influence of diffusion on space-charge-limited current measurements in organic semiconductors

• Thomas Kirchartz

Beilstein J. Nanotechnol. 2013, 4, 180–188, doi:10.3762/bjnano.4.18

• reasonably accurate mobility values. Keywords: current–voltage curves; electron-only device; drift–diffusion; mobility; simulation; traps; Introduction A frequently used method to analyze charge carrier transport in organic semiconductors is based on space-charge-limited current measurements performed on

• ][21][22][23][24][25][26]. While there have been numerous attempts to develop models to take traps in unipolar devices into account [27][28][29][30][31], nearly all of them still rely on drift as the only transport mechanism. However, traps will often lead to a situation where diffusion currents cannot

• be neglected anymore, which makes analytical approximations for this situation problematic [7][10][13]. In this article numerical simulations are used to show how the presence of traps leads to deviations from the analytical equations typically used to analyze single-carrier current–voltage curves. I

Horizontal versus vertical charge and energy transfer in hybrid assemblies of semiconductor nanoparticles

• Gilad Gotesman,
• Rahamim Guliamov and
• Ron Naaman

Beilstein J. Nanotechnol. 2012, 3, 629–636, doi:10.3762/bjnano.3.72

• quenching was independent of the linker length. This effect is well known for CdSe NPs; it results from the formation of surface traps owing to the thiol binding [28][29][30][31]. The PL quenching, which is independent of the MT length, indicates that the number of traps is the same for all linkers, and

Mesoporous MgTa₂O₆ thin films with enhanced photocatalytic activity: On the interplay between crystallinity and mesostructure

• Jin-Ming Wu,
• Igor Djerdj,
• Till von Graberg and
• Bernd M. Smarsly

Beilstein J. Nanotechnol. 2012, 3, 123–133, doi:10.3762/bjnano.3.13

• subsequent calcination, three factors readily affecting the photocatalytic activity changed dramatically in the current investigation, i.e., crystallinity, grain size, and ordered mesopores [27][28]. Defects serve as traps for photogenerated electron–hole pairs [26]; therefore, improved crystallinity

The effect of surface anisotropy in the slippery zone of Nepenthes alata pitchers on beetle attachment

• Elena V. Gorb and
• Stanislav N. Gorb

Beilstein J. Nanotechnol. 2011, 2, 302–310, doi:10.3762/bjnano.2.35

• characteristic for carnivorous plants from the genus Nepenthes [1][2]. These traps, using a passive pitfall mechanism for capturing, mainly, invertebrates, consist of several functional zones specialized for prey attraction, capture, retention, digestion, and uptake of nutrients [3][4][5][6]. During the past few