Schottky junction/ohmic contact behavior of a nanoporous TiO₂ thin film photoanode in contact with redox electrolyte solutions

• Masao Kaneko,
• Hirohito Ueno and
• Junichi Nemoto

Beilstein J. Nanotechnol. 2011, 2, 127–134, doi:10.3762/bjnano.2.15

• are transported first to the fluorine-doped tin oxide (FTO, SnO2:F) conductive layer through TiO2 grain boundaries and then to the cathode reducing electron acceptor there (O2 in the present case). In a Schottky junction, under the conditions when the band structure is flat without any bending, the

• . The thin space charge layer is located at the interface between TiO2 and the liquid, and the band structure (CB and VB) in the TiO2 bulk is interconnected through the TiO2 grain boundaries forming continuous CB electron-transporting channels from the space charge layer to reach the conductive layer on

• separated into electrons and holes due to the slope of the VB and CB bands, the h+ then being reduced by MeOH present in the liquid, and the e− being transported in the CB through TiO2 grain boundaries to the counter cathode via the FTO. As reported earlier by us [13], resistances at the grain boundaries

Defects in oxide surfaces studied by atomic force and scanning tunneling microscopy

• Thomas König,
• Georg H. Simon,
• Lars Heinke,
• Leonid Lichtenstein and
• Markus Heyde

Beilstein J. Nanotechnol. 2011, 2, 1–14, doi:10.3762/bjnano.2.1

• trapped charge on the surface dipole. This demonstrates the great benefit of NC-AFM and KPFM in combination with STM and STS. Line defects Apart from point defects more complex structures like line defects are found on oxide surfaces. Line defects can be caused by step edges or grain boundaries that