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Search for "HED-TIEs" in Full Text gives 1 result(s) in Beilstein Journal of Nanotechnology.

Light-induced magnetoresistance in solution-processed planar hybrid devices measured under ambient conditions

  • Sreetama Banerjee,
  • Daniel Bülz,
  • Danny Reuter,
  • Karla Hiller,
  • Dietrich R. T. Zahn and
  • Georgeta Salvan

Beilstein J. Nanotechnol. 2017, 8, 1502–1507, doi:10.3762/bjnano.8.150

Graphical Abstract
  • -pentacene film. Keywords: HED-TIEs; hybrid electronic devices; organic field-effect transistors (OFETs); organic magnetoresistance; planar hybrid devices; TIPS-pentacene; Findings The field of molecular spintronics has received lot of research interest in the last years because of the possibility of
  • trenches were patterned using conventional UV lithography and partially refilled with a thermally grown SiO2 layer of 130 nm. The cavity-like trench (see Figure 1b for a sketch) electrically isolates the electrodes. The process flow for the preparation of the HED-TIEs is similar to that described in [12
  • exhibit a slower carrier relaxation. This can be attributed to higher electric fields and shorter charge-carrier transit times in the shorter channels of the HED-TIEs (ca. 100 nm) compared to that of OFETs (20 µm). Also the magnitude of switching in the HED-TIE device for both light and magnetic field was
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Published 21 Jul 2017
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