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Search for "Hall effect" in Full Text gives 35 result(s) in Beilstein Journal of Nanotechnology.
Electron energy relaxation under terahertz excitation in (Cd1−xZnx)3As2 Dirac semimetals
Beilstein J. Nanotechnol. 2017, 8, 167–171, doi:10.3762/bjnano.8.17
- inverted spectrum composition region x < 0.08, the third one has x = 0.25 and has a direct spectrum. The main electrophysical parameters of the samples are summarized in Table 1. All samples were of the n-type. The free electron concentration measured using the Hall effect did not change in the temperature
Nitrogen-doped twisted graphene grown on copper by atmospheric pressure CVD from a decane precursor
Beilstein J. Nanotechnol. 2017, 8, 145–158, doi:10.3762/bjnano.8.15
- be an ideal platform for the realization of the high-temperature zero-field quantum valley Hall effect [7]. From a practical point of view, the band gap opening in the electronic structure of graphene is quite attractive. It is expected that this will result in a new approach for application of
Zigzag phosphorene nanoribbons: one-dimensional resonant channels in two-dimensional atomic crystals
Beilstein J. Nanotechnol. 2016, 7, 1983–1990, doi:10.3762/bjnano.7.189
- promising as it appeared, has evolved into a mainstream interest in condensed matter physics due to landmark discoveries in the late 1970s and early 1980s, such as the quantum Hall effect [2] and conductive polymers [3], respectively, 2D and 1D systems. The subsequent discovery of new carbon allotropes
Synthesis and applications of carbon nanomaterials for energy generation and storage
Beilstein J. Nanotechnol. 2016, 7, 149–196, doi:10.3762/bjnano.7.17
- ], impermeability to gases [69], capability to carry high current densities (a million times higher than copper) [70], anomalous quantum Hall effect (QHE) that appears larger than in other materials [71][72], and zero band gap semiconducting properties with one type of electrons and one type of holes [73] that can
Production, detection, storage and release of spin currents
Beilstein J. Nanotechnol. 2015, 6, 736–743, doi:10.3762/bjnano.6.75
- ] proposed using circularly propagating light beams to excite polarized spin currents. Brataas and coworkers [14] predicted that precessing ferromagnets inject spin currents in semiconductors. The spin Hall effect [15][16] uses an electric field. The novel mechanism based on laterally connected rings is
Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization
Beilstein J. Nanotechnol. 2014, 5, 2216–2221, doi:10.3762/bjnano.5.230
- using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on
- . Hall effect measurement The Hall effect measurement of a p-ZnO rectangular pellet with dimensions 0.8 × 0.8 × 0.1 cm3 was performed using a four-probe van der Pauw method using silver contacts, and data were averaged to ensure accuracy. The carrier concentration, Hall mobility and resistivity of p-ZnO
- spectroscopy [9][10]. The depletion width on the n-side is found to be shorter than on the p-side because the carrier concentration of n-Si is higher than p-ZnO, which is supported by the Hall effect results. The calculated values of these various diode parameters using Equations 4–6 are listed in Table 1
Carbon-based smart nanomaterials in biomedicine and neuroengineering
Beilstein J. Nanotechnol. 2014, 5, 1849–1863, doi:10.3762/bjnano.5.196
- electronic structure bestows graphene uncommon and astonishing electronic properties, such as the quantum Hall effect, which can be observed even at room temperature [25], a very high electron mobility [26], the ambipolar electric field effect, the ballistic conduction of electronic charge carriers [27], as
Focused electron beam induced deposition: A perspective
Beilstein J. Nanotechnol. 2012, 3, 597–619, doi:10.3762/bjnano.3.70
- . The anomalous Hall effect, indicative of the Hall contribution proportional to the sample’s magnetization, shows superparamagnetic behavior at room temperature. Data at low temperature could not be taken due to noise issues. From these observations, and in particular with regard to the sudden drop in
Spontaneous dissociation of Co2(CO)8 and autocatalytic growth of Co on SiO2: A combined experimental and theoretical investigation
Beilstein J. Nanotechnol. 2012, 3, 546–555, doi:10.3762/bjnano.3.63
- precursor [52][53]. A larger degree of grain boundary scattering in the spontaneously formed deposit, as well as a possibly higher carbon content may be the cause for this enhanced resistivity. We also performed temperature-dependent resistivity measurements (Figure 4a) as well as Hall effect measurements
- grown on the plasma-activated SiO2 surfaces. The lateral shape of the deposit for resistivity and Hall effect measurements was defined by a lift-off procedure of a photolithographically defined resist pattern on which the plasma-activated growth had been performed. The deposit height was determined as
Junction formation of Cu3BiS3 investigated by Kelvin probe force microscopy and surface photovoltage measurements
Beilstein J. Nanotechnol. 2012, 3, 277–284, doi:10.3762/bjnano.3.31
- good structural and optical properties [5][6]. Recently, the potential of the Cu3BiS3/In2S3 heterojunction was investigated by surface photovoltage (SPV) and Hall-effect measurements, showing a passivation of surface defect states in the Cu3BiS3 by the In2S3 buffer layer and the formation of a
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