Direct observation of the Si(110)-(16×2) surface reconstruction by atomic force microscopy

• Tatsuya Yamamoto,
• Ryo Izumi,
• Kazushi Miki,
• Takahiro Yamasaki,
• Yasuhiro Sugawara and
• Yan Jun Li

Beilstein J. Nanotechnol. 2020, 11, 1750–1756, doi:10.3762/bjnano.11.157

• , Himeji, Hyogo 671-2280, Japan Institute for Nanoscience Design, Osaka University, 1-2 Machikaneyama, Toyonaka, Osaka 560-0043, Japan 10.3762/bjnano.11.157 Abstract The atomic arrangement of the Si(110)-(16×2) reconstruction was directly observed using noncontact atomic force microscopy (NC-AFM) at 78 K

• between upper and lower terraces, which have not been reported using STM. These findings are key evidence for establishing an atomic model of the Si(110)-(16×2) reconstruction, which indeed has a complex structure. Keywords: atomic force microscopy (AFM); noncontact atomic force microscopy (NC-AFM); Si

• (110); Si(110)-(16×2); Introduction The Si(110) surface, which is one of the low-index Si planes, has been attracting growing interest in the fields of industrial technology and surface science. From an industrial application perspective, it has been considered to be a promising material for p-type

Increasing the stability of DNA nanostructure templates by atomic layer deposition of Al₂O₃ and its application in imprinting lithography

• Hyojeong Kim,
• Kristin Arbutina,
• Anqin Xu and
• Haitao Liu

Beilstein J. Nanotechnol. 2017, 8, 2363–2375, doi:10.3762/bjnano.8.236

• features [50][51]. The conformal protective film significantly improves the chemical and mechanical stabilities of DNA nanostructures, allowing them to be used in environments that are incompatible with pristine DNA nanostructures. Experimental Materials Silicon wafers [Si(110), with native oxide] and

Simulation of thermal stress and buckling instability in Si/Ge and Ge/Si core/shell nanowires

• Suvankar Das,
• Amitava Moitra,
• Mishreyee Bhattacharya and
• Amlan Dutta

Beilstein J. Nanotechnol. 2015, 6, 1970–1977, doi:10.3762/bjnano.6.201

• opposite trends. The largest core diameter of 10 nm corresponds to the pure, monoelemental nanowires. Quantum scaling between the real and classical (MD) temperatures for the (a) Si/Ge <111>, (b) Ge/Si <111>, (c) Si/Ge <110> and (d) Ge/Si <110> CSNWs. The minimum nonzero MD temperature corresponding to 0 K

• >-oriented wires of different core diameters. Stability diagrams for CSNWs of (a) Si/Ge <111>, (b) Ge/Si <111>, (c) Si/Ge <110> and (d) Ge/Si <110> configurations. Any combination of temperature increase and nanowire length is safe so long as it remains below the corresponding stability curve