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Search for "depletion" in Full Text gives 162 result(s) in Beilstein Journal of Nanotechnology.

Density functional theory study of Au-fcc/Ge and Au-hcp/Ge interfaces

  • Olga Sikora,
  • Małgorzata Sternik,
  • Benedykt R. Jany,
  • Franciszek Krok,
  • Przemysław Piekarz and
  • Andrzej M. Oleś

Beilstein J. Nanotechnol. 2023, 14, 1093–1105, doi:10.3762/bjnano.14.90

Graphical Abstract
  • accumulation (yellow) and charge depletion (light blue) regions with respect to separate Ge and Au slabs terminated with vacuum (see Appendix B for details). One can observe charge accumulation between the interface Ge and Au atoms, as expected for bond formation. Figure 12b presents the charge density map for
  •  13 with yellow regions representing charge accumulation and light blue regions indicating charge depletion. For all heterostructures, the charge transfer from Au and Ge interfacial atoms leads to the electron accumulation at approximately half of their distance. At the presented isocharge surface
  • e/Å−3) for variants C (a) and D (b) of the Au-fcc(011)/Ge(001) interface compared with the isosurface of the Au-hcp(010)/Ge(111) interface (c). Yellow and cyan regions indicate the electron accumulation and depletion, respectively. Interfacial energies (γint), work of separation values (Wsep
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Published 15 Nov 2023

A visible-light photodetector based on heterojunctions between CuO nanoparticles and ZnO nanorods

  • Doan Nhat Giang,
  • Nhat Minh Nguyen,
  • Duc Anh Ngo,
  • Thanh Trang Tran,
  • Le Thai Duy,
  • Cong Khanh Tran,
  • Thi Thanh Van Tran,
  • Phan Phuong Ha La and
  • Vinh Quang Dang

Beilstein J. Nanotechnol. 2023, 14, 1018–1027, doi:10.3762/bjnano.14.84

Graphical Abstract
  • dark current can be explained by the formation of a depletion region near the surface of the ZnO NRs resulting from oxygen absorption [43] and at p-type CuO NPs/n-type ZnO NRs heterojunctions under dark conditions. In addition, the recovery current obtained 1 min after turning off the visible light is
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Published 13 Oct 2023

N-Heterocyclic carbene-based gold etchants

  • Robert B. Chevalier,
  • Justin Pantano,
  • Matthew K. Kiesewetter and
  • Jason R. Dwyer

Beilstein J. Nanotechnol. 2023, 14, 865–871, doi:10.3762/bjnano.14.71

Graphical Abstract
  • observation contrasts with the localized depletion of gold during etching by solutions of 1 in DCM and THF, as shown in the electron micrographs in Figure 3b,c. The formation of voids in the gold film allowed for comparison of this material loss between different samples without the need to standardize
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Published 21 Aug 2023

Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives

  • Mattia da Lisca,
  • José Alvarez,
  • James P. Connolly,
  • Nicolas Vaissiere,
  • Karim Mekhazni,
  • Jean Decobert and
  • Jean-Paul Kleider

Beilstein J. Nanotechnol. 2023, 14, 725–737, doi:10.3762/bjnano.14.59

Graphical Abstract
  • formation of space charge regions among the different layers along the structure [28]. Specifically, the VCPD progression reflects the band bending present in the presence of depletion and accumulation regions. In particular, undoped InP crystals always contain different unintentional impurities due to the
  • formation of a depletion (or inversion) space charge layer imposed by the charge neutrality condition [32][35]. By illuminating the sample, a SPV is generated by the drift and diffusion of photogenerated carriers towards the surface, which counteracts the defect-induced band bending energy variations [20
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Published 14 Jun 2023

Plasmonic nanotechnology for photothermal applications – an evaluation

  • A. R. Indhu,
  • L. Keerthana and
  • Gnanaprakash Dharmalingam

Beilstein J. Nanotechnol. 2023, 14, 380–419, doi:10.3762/bjnano.14.33

Graphical Abstract
  • specific heat, k is the thermal conductivity, T is the temperature, t is the time, and is the rate of heat generation (or depletion) per unit volume. The Laplacian ∇2 represents the temporal change in the temperature variation of the material. The rate of heat generation or depletion, , is arrived at from
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Published 27 Mar 2023

High–low Kelvin probe force spectroscopy for measuring the interface state density

  • Ryo Izumi,
  • Masato Miyazaki,
  • Yan Jun Li and
  • Yasuhiro Sugawara

Beilstein J. Nanotechnol. 2023, 14, 175–189, doi:10.3762/bjnano.14.18

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  • interface state density inside semiconductors. We derive an analytical expression for the electrostatic forces between a tip and a semiconductor sample in the accumulation, depletion, and inversion regions, taking into account the charge transfer between the bulk and interface states in semiconductors. We
  • show that the analysis of electrostatic forces in the depletion region at high- and low-frequency AC bias voltages provides information about the interface state density in the semiconductor bandgap. As a preliminary experiment, high-low KPFS measurements were performed on ion-implanted silicon
  • semiconductor. We show that the electrostatic force between the tip and the semiconductor sample strongly depends on the capacitance of the charge depletion region on the surface, and that the analysis of the electrostatic force at low- and high-frequency AC bias voltages can provide information on the
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Published 31 Jan 2023

Solvent-induced assembly of mono- and divalent silica nanoparticles

  • Bin Liu,
  • Etienne Duguet and
  • Serge Ravaine

Beilstein J. Nanotechnol. 2023, 14, 52–60, doi:10.3762/bjnano.14.6

Graphical Abstract
  • extended Kern and Kern-inspired patchy models [11][12][13], spot-like patchy models [14][15], and rigid-body patchy models [16][17] have shown a great potentiality of patchy particles to be used as building blocks for the assembly of a great variety of colloidal structures. Depletion interactions have been
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Published 06 Jan 2023

Utilizing the surface potential of a solid electrolyte region as the potential reference in Kelvin probe force microscopy

  • Nobuyuki Ishida

Beilstein J. Nanotechnol. 2022, 13, 1558–1563, doi:10.3762/bjnano.13.129

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  • changes when a DC voltage is applied between the electrodes in a simple electrochemical cell, as shown in Figure 1a. After applying the DC voltage for some time, the electric field in the solid electrolyte becomes shielded by the formation of a Li-depletion layer on the positive electrode side and a Li
  • toward the negatively biased electrode, resulting in an ionic current flow. The ion current decays with time and, in principle, becomes zero when the electric field in the solid electrolyte is shielded by the accumulation and depletion of Li ions. Before starting each KPFM measurement, we waited 2–4 min
  • shielded by the accumulation and depletion of Li ions. In this experiment, the Au2 electrode was connected to the ground; therefore, the CPD changes at the Au2 electrode were negligibly small, and the potentials at the Au1 electrode were almost the same as the applied voltage. As mentioned above, analyzing
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Published 19 Dec 2022

Photoelectrochemical water oxidation over TiO2 nanotubes modified with MoS2 and g-C3N4

  • Phuong Hoang Nguyen,
  • Thi Minh Cao,
  • Tho Truong Nguyen,
  • Hien Duy Tong and
  • Viet Van Pham

Beilstein J. Nanotechnol. 2022, 13, 1541–1550, doi:10.3762/bjnano.13.127

Graphical Abstract
  • Mott–Schottky relationship involving the apparent capacitance as a function of the potential under depletion conditions [54]: where C, ε, ε0, N, A, Va, Vfb, k, and T are the capacitance of the space charge region, the dielectric constant of the semiconductor, the vacuum permittivity, the donor density
  • -C3N4 and MoS2 to TNAs. Furthermore, the Efb values of g-C3N4/TNAs and MoS2/TNAs are shifted to −0.14 and −0.045 V vs RHE (Figure 5c). The heterostructures express much more negative Efb values than pristine TNAs, which is attributed to the enhanced electron density, the depletion of the Efb, and
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Published 16 Dec 2022

LED-light-activated photocatalytic performance of metal-free carbon-modified hexagonal boron nitride towards degradation of methylene blue and phenol

  • Nirmalendu S. Mishra and
  • Pichiah Saravanan

Beilstein J. Nanotechnol. 2022, 13, 1380–1392, doi:10.3762/bjnano.13.114

Graphical Abstract
  • photocatalytic process [24]. The MBN-80 also exhibited a lower LDB and charge transit time through the depletion layer (charge transit time ∝ (LDebye)2), meaning a lower recombination of the charge carriers leading to an enhanced photocatalytic activity [29]. The same could again be justified through the width
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Published 22 Nov 2022

A super-oscillatory step-zoom metalens for visible light

  • Yi Zhou,
  • Chao Yan,
  • Peng Tian,
  • Zhu Li,
  • Yu He,
  • Bin Fan,
  • Zhiyong Wang,
  • Yao Deng and
  • Dongliang Tang

Beilstein J. Nanotechnol. 2022, 13, 1220–1227, doi:10.3762/bjnano.13.101

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  • emission depletion microscopy (STED) can realize the localization of single fluorescent molecules with 1 nm accuracy [2], albeit with the disadvantages of required fluorescence labeling and slow image reconstruction. Super-resolution microscopy based on structured light illumination (SIM) can realize a
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Published 28 Oct 2022

A chemiresistive sensor array based on polyaniline nanocomposites and machine learning classification

  • Jiri Kroutil,
  • Alexandr Laposa,
  • Ali Ahmad,
  • Jan Voves,
  • Vojtech Povolny,
  • Ladislav Klimsa,
  • Marina Davydova and
  • Miroslav Husak

Beilstein J. Nanotechnol. 2022, 13, 411–423, doi:10.3762/bjnano.13.34

Graphical Abstract
  • coefficient. The resistivity of these nanocomposites depends on the p–n depletion layer width on the interface between the n-type nanoparticles and the surrounding p-type PANi molecules. Gas sensing analysis The gas sensing characterizations of sensitive layers were performed using a custom-built apparatus
  • results in a widening of the depletion layers on p–n junctions and, thus, the resistance increases [18]. All these effects are reversible when the reducing gas is replaced by air. Beside these effects, nanostructures added into polyaniline increase the initial resistance due to larger disorder and
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Published 27 Apr 2022

Bacterial safety study of the production process of hemoglobin-based oxygen carriers

  • Axel Steffen,
  • Yu Xiong,
  • Radostina Georgieva,
  • Ulrich Kalus and
  • Hans Bäumler

Beilstein J. Nanotechnol. 2022, 13, 114–126, doi:10.3762/bjnano.13.8

Graphical Abstract
  • additional bacterial depletion could be achieved by steps in the production process. In comparison with the manufacturing of human blood products, it should be noted that the starting materials can be tested or are declared by the manufacturer to be sterile or endotoxin-free. The subsequent manufacturing
  • safety. Endotoxins could potentially be introduced into the production process by the starting substances. Also, the depletion of any bacteria potentially present in the process could also cause the LPS to be released. One Escherichia coli cell has approximately 10–50 fg of LPS [16][17]. One endotoxin
  • product. The production process includes several washing steps that could contribute to the depletion of a potential bacterial load. Glutaraldehyde (GA) is used for the inter- and, to a certain extent, intramolecular cross-linking of the hemoglobin molecules at a concentration of 0.02% [20][21]. It is
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Published 24 Jan 2022

Morphology-driven gas sensing by fabricated fractals: A review

  • Vishal Kamathe and
  • Rupali Nagar

Beilstein J. Nanotechnol. 2021, 12, 1187–1208, doi:10.3762/bjnano.12.88

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  • structure, inherent rough surfaces, and gaps acting as diffusion channels. Gas-sensing mechanism of fractal structures There are a number of models to explain the function of conductometric SMO gas sensors. For instance, electron depletion layer (for n-type materials) or hole accumulation layer theory (for
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Published 09 Nov 2021

A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization

  • Adem Koçyiğit,
  • Adem Sarılmaz,
  • Teoman Öztürk,
  • Faruk Ozel and
  • Murat Yıldırım

Beilstein J. Nanotechnol. 2021, 12, 984–994, doi:10.3762/bjnano.12.74

Graphical Abstract
  • increase of the current at zero bias voltage from dark to 20 mW/cm2 light power illumination intensity can be attributed to the increasing number of carriers at the interface of the Au/CuNiCoS4/p-Si device due to illumination. The depletion region between the metal and semiconductor can cause a current in
  • range of 10 kHz to 1 MHz at voltages from −5 to 5 V. The C–V characteristics revealed that the capacitance values did not change in accumulation and depletion regions when changing voltage and frequency but increased suddenly in the inversion region and exhibited peaks. The intensity of the peaks
  • attributed to interface states [38][39]. The conductance–voltage (G–V) graphs of the Au/CuNiCoS4/p-Si photodiode for different frequencies are displayed in Figure 10. Again, the conductance values did not change in the accumulation and depletion regions. However, the conductance values change in the
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Published 02 Sep 2021

Comprehensive review on ultrasound-responsive theranostic nanomaterials: mechanisms, structures and medical applications

  • Sepand Tehrani Fateh,
  • Lida Moradi,
  • Elmira Kohan,
  • Michael R. Hamblin and
  • Amin Shiralizadeh Dezfuli

Beilstein J. Nanotechnol. 2021, 12, 808–862, doi:10.3762/bjnano.12.64

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Published 11 Aug 2021

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

  • Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

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Published 02 Jul 2021

Impact of GaAs(100) surface preparation on EQE of AZO/Al2O3/p-GaAs photovoltaic structures

  • Piotr Caban,
  • Rafał Pietruszka,
  • Jarosław Kaszewski,
  • Monika Ożga,
  • Bartłomiej S. Witkowski,
  • Krzysztof Kopalko,
  • Piotr Kuźmiuk,
  • Katarzyna Gwóźdź,
  • Ewa Płaczek-Popko,
  • Krystyna Lawniczak-Jablonska and
  • Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 578–592, doi:10.3762/bjnano.12.48

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  • the layers in the device. Arsenic underwent oxidation, gallium exhibited distortion related with lowered concentration of As in relation to stoichiometric GaAs. Also, the Zn 3d spectrum shows that the structure of ZnO is defected by the depletion of oxygen, which is accompanied by the appearance of a
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Published 28 Jun 2021

The impact of molecular tumor profiling on the design strategies for targeting myeloid leukemia and EGFR/CD44-positive solid tumors

  • Nikola Geskovski,
  • Nadica Matevska-Geshkovska,
  • Simona Dimchevska Sazdovska,
  • Marija Glavas Dodov,
  • Kristina Mladenovska and
  • Katerina Goracinova

Beilstein J. Nanotechnol. 2021, 12, 375–401, doi:10.3762/bjnano.12.31

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Published 29 Apr 2021

Structural and optical characteristics determined by the sputtering deposition conditions of oxide thin films

  • Petronela Prepelita,
  • Florin Garoi and
  • Valentin Craciun

Beilstein J. Nanotechnol. 2021, 12, 354–365, doi:10.3762/bjnano.12.29

Graphical Abstract
  • percentage composition allowed us to observe the stoichiometry of the sample and a depletion of oxygen (48.38%) in the oxide film. For the 250 nm thick SiO2 sample, and given the percentage data, following carbon contamination (according to the XPS results) the amount of O K increases (as compared to the 200
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Published 19 Apr 2021

Differences in surface chemistry of iron oxide nanoparticles result in different routes of internalization

  • Barbora Svitkova,
  • Vlasta Zavisova,
  • Veronika Nemethova,
  • Martina Koneracka,
  • Miroslava Kretova,
  • Filip Razga,
  • Monika Ursinyova and
  • Alena Gabelova

Beilstein J. Nanotechnol. 2021, 12, 270–281, doi:10.3762/bjnano.12.22

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  • transferrin (Tr) internalization than MDC in A549 cells. Caveolae and lipid raft internalizations are known to be inhibited by N, F, and MBCD through depletion of cholesterol from the cell membrane [51]. While F and N were described to be very specific inhibitors of caveolin-mediated endocytosis (CavME
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Published 23 Mar 2021

Paper-based triboelectric nanogenerators and their applications: a review

  • Jing Han,
  • Nuo Xu,
  • Yuchen Liang,
  • Mei Ding,
  • Junyi Zhai,
  • Qijun Sun and
  • Zhong Lin Wang

Beilstein J. Nanotechnol. 2021, 12, 151–171, doi:10.3762/bjnano.12.12

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  • layer. In a low RH scenario, water molecules are primarily condensed onto the available active sites of the GO surface, which act as the obstacle for electrostatically induced charges and reduce the contact surface to form a depletion region. As a consequence, the output current of the GO P-TENGs
  • on the GO surface, which results in the formation of a continuous depletion region and leads to a more rapid current decrease at a higher RH. In order to investigate the electrical performances of the fabricated GO P-TENG as a self-powered humidity sensor, the normalized Voc and Isc of the GO P-TENG
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Published 01 Feb 2021

ZnO and MXenes as electrode materials for supercapacitor devices

  • Ameen Uddin Ammar,
  • Ipek Deniz Yildirim,
  • Feray Bakan and
  • Emre Erdem

Beilstein J. Nanotechnol. 2021, 12, 49–57, doi:10.3762/bjnano.12.4

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  • MXenes as electrode material for their use in supercapacitor devices. MXenes as electrode material in supercapacitors Today, there is a great interest in renewable energy sources, such as solar and wind, for various reasons, such as the depletion of fossil fuels and the smaller environmental impact [15
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Published 13 Jan 2021

Bio-imaging with the helium-ion microscope: A review

  • Matthias Schmidt,
  • James M. Byrne and
  • Ilari J. Maasilta

Beilstein J. Nanotechnol. 2021, 12, 1–23, doi:10.3762/bjnano.12.1

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  • holds promise to detect fluorescent biomarkers with better resolution than that achievable even with the most advanced super-resolution optical microscopy techniques, for instance, stimulated emission depletion microscopy [51]. In particular, it may allow for correlating fluorescence microscopy with HIM
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Published 04 Jan 2021

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

  • Rosine Coq Germanicus,
  • Peter De Wolf,
  • Florent Lallemand,
  • Catherine Bunel,
  • Serge Bardy,
  • Hugues Murray and
  • Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

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  • applied voltage can be extracted. The availability of a C–V (sMIM-C as a function of V) spectrum in every pixel allows for the extraction of a high-resolution map of the flatband voltage and pn junction depletion zones. This illustrates the capability to reveal sample properties that are either not
  • differentiation and localization of all carrier levels and regions in the sample. A positive bias applied to the sample drives the n-type regions into the depletion regime enhancing their contrast, while the p-type regions are in the inversion regime lowering their contrast. When a negative bias is applied, the
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Published 23 Nov 2020
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