Nanocrystalline TiO₂/SnO₂ heterostructures for gas sensing

• Barbara Lyson-Sypien,
• Anna Kusior,
• Mieczylaw Rekas,
• Jan Zukrowski,
• Marta Gajewska,
• Katarzyna Michalow-Mauke,
• Thomas Graule,
• Marta Radecka and
• Katarzyna Zakrzewska

Beilstein J. Nanotechnol. 2017, 8, 108–122, doi:10.3762/bjnano.8.12

• electrical resistivity reduces to ρ = 1/(e·μe·ne) for n-type semiconductors, the 1/R(pH2) dependence assumes the same form as ne(pH2) does (Equations 8–10). Thus, n = 1/2, 1 or 2 are theoretically predicted for different oxygen species preadsorbed on the surface of the semiconductor. In the case of formation

A new approach to grain boundary engineering for nanocrystalline materials

• Shigeaki Kobayashi,
• Sadahiro Tsurekawa and
• Tadao Watanabe

Beilstein J. Nanotechnol. 2016, 7, 1829–1849, doi:10.3762/bjnano.7.176

• the fractal analysis of the grain boundary microstructure. Keywords: electrical resistivity control; fractal analysis; grain boundary engineering (GBE); intergranular fracture control; nanocrystalline materials; Review Introduction Nanocrystalline metals and alloys have been receiving increased

• properties. Finally, our most recent work on GBE for the control of electrical resistivity in gold thin films is introduced as an example of a possible challenge toward GBE for high performance functional materials. Effect of grain boundary microstructure on hardness in electrodeposited nanocrystalline

• resistivity manipulated by GBE in nanocrystalline gold thin films The improvement of electrical conductivity or precise control of electrical resistivity is required for the development of high performance electrical and magnetic materials for modern electronic devices such as MEMS and NEMS. It has been

Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory

• Austin Deschenes,
• Sadid Muneer,
• Mustafa Akbulut,
• Ali Gokirmak and
• Helena Silva

Beilstein J. Nanotechnol. 2016, 7, 1676–1683, doi:10.3762/bjnano.7.160

• with initially anti-parallel (OFF) free/fixed layers use anti-parallel properties. Graph of materials properties used in model construction. From top to bottom: Seebeck values of CoFeB for parallel (ON) and anti-parallel (OFF) states [11], thermal conductivity of materials [8][10], electrical

• resistivity of materials [8]. Crystalline and amorphous CoFeB values came from literature [12]. Schematic top-down view and quarter cross-section view of the simulated geometries. The dotted lines indicate the axis of symmetry for the 2D cylindrical simulations. The active area of the device is surrounded by

Reasons and remedies for the agglomeration of multilayered graphene and carbon nanotubes in polymers

• Rasheed Atif and
• Fawad Inam

Beilstein J. Nanotechnol. 2016, 7, 1174–1196, doi:10.3762/bjnano.7.109

Thermo-voltage measurements of atomic contacts at low temperature

• Ayelet Ofarim,
• Bastian Kopp,
• Thomas Möller,
• León Martin,
• Johannes Boneberg,
• Paul Leiderer and
• Elke Scheer

Beilstein J. Nanotechnol. 2016, 7, 767–775, doi:10.3762/bjnano.7.68

• , electrical resistivity ρ(T) = 8.73575 × 10−9 Ωm + 0.08325 × 10−9 Ωm K−1·T; polyimide: κ = 0.15 W m−1 K−1, cp = 1100 J kg−1 K−1, ρm = 1300 kg m−3; Kapton: κ = (−1.372384 × 10−3 + 5.601653 × 10−3·T + 2.082966 × 10−6·T2 − 5.05445 × 10−9·T3) W m−1 K−1 (for 5 K ≤ T < 140 K), κ = (−7.707532 × 10−3 + 5.769136 × 10

Synthesis and applications of carbon nanomaterials for energy generation and storage

• Marco Notarianni,
• Jinzhang Liu,
• Kristy Vernon and
• Nunzio Motta

Beilstein J. Nanotechnol. 2016, 7, 149–196, doi:10.3762/bjnano.7.17

• hexagons around the equatorial plane and exhibits a more oval shape (Figure 4) [26]. The main properties of C60 are [25]: Young’s modulus, ≈14 GPa Electrical resistivity, ≈1014 Ω m Thermal conductivity, ≈0.4 W/mK Band gap, 1.7 eV The other fullerene species show similar properties to C60. Depending on the

• , ≈0.62–1.25 TPa [40] Electrical resistivity, ≈1 μΩ cm [41] Thermal conductivity, ≈3000 W/mK [42] In addition to their extraordinary properties, the density of CNTs is around 1.33–1.4 g/cm3 [40], which is half of the density of aluminium (2.7 g/cm3), making them very attractive for lightweight

Blue and white light emission from zinc oxide nanoforests

• Nafisa Noor,
• Luca Lucera,
• Thomas Capuano,
• Venkata Manthina,
• Alexander G. Agrios,
• Helena Silva and
• Ali Gokirmak

Beilstein J. Nanotechnol. 2015, 6, 2463–2469, doi:10.3762/bjnano.6.255

• . Since the ZnO nanoforest material has relatively weak mechanical properties and adhesion to the substrate, probing with tungsten tips causes some shifting of this material and so the probes are likely to touch both ZnO and the polysilicon substrate. The room-temperature electrical resistivity of the ZnO

Growth evolution and phase transition from chalcocite to digenite in nanocrystalline copper sulfide: Morphological, optical and electrical properties

• Priscilla Vasthi Quintana-Ramirez,
• Ma. Concepción Arenas-Arrocena,
• José Santos-Cruz,
• Marina Vega-González,
• Omar Martínez-Alvarez,
• Víctor Manuel Castaño-Meneses,
• Laura Susana Acosta-Torres and
• Javier de la Fuente-Hernández

Beilstein J. Nanotechnol. 2014, 5, 1542–1552, doi:10.3762/bjnano.5.166

• ]. Electrical properties The CuxS films prepared in aqueous solution are amorphous with undefined morphology. They exhibit a low square electrical resistivity (about 103 Ω/sq) as shown in Figure 6. Chalcocite CuxS from organic solution has a resistance of the order of 105–106 Ω/sq, while crystalline CuxS has a

Review of nanostructured devices for thermoelectric applications

• Giovanni Pennelli

Beilstein J. Nanotechnol. 2014, 5, 1268–1284, doi:10.3762/bjnano.5.141

• electrical resistivity ρ = 1/σ and from the material thermal conductivity kt, to be combined with the geometrical parameters of the legs (length and cross-section surface). Given a temperature difference TH − TC, the generator acts as a voltage generator with an open circuit voltage Vg = Stotal(TH − TC

Structural and thermoelectric properties of TMGa₃ (TM = Fe, Co) thin films

• Sebastian Schnurr,
• Ulf Wiedwald,
• Paul Ziemann,
• Valeriy Y. Verchenko and
• Andrei V. Shevelkov

Beilstein J. Nanotechnol. 2013, 4, 461–466, doi:10.3762/bjnano.4.54

• resistivity of ρ = 200 μΩ·cm for CoGa3 and an electrical resistivity of about 600 μΩ·cm with a small negative temperature dependence for FeGa3. The observed values and temperature dependencies are typical of high-resistivity metallic glasses. This is especially surprising in the case of FeGa3, which as

• 43 nm. Backscattering energies of Co, Ga and Si at the sample surface are indicated by vertical marks. The displacement of the Si edge of the substrate toward lower backscattering energies is caused by the film thickness. Electrical resistivity of FeGa3, CoGa3 and Fe0.75Co0.25Ga3 films as a function

• as demonstrated by Rutherford backscattering experiments. The relatively low deposition temperature necessary for conserving the composition leads, however, to ‘X-ray amorphous’ film structures with immediate consequences on their transport properties: A practically temperature-independent electrical

Catalytic activity of nanostructured Au: Scale effects versus bimetallic/bifunctional effects in low-temperature CO oxidation on nanoporous Au

• Lu-Cun Wang,
• Yi Zhong,
• Haijun Jin,
• Daniel Widmann,
• Jörg Weissmüller and
• R. Jürgen Behm

Beilstein J. Nanotechnol. 2013, 4, 111–128, doi:10.3762/bjnano.4.13

• was performed in 1 M HClO4 aqueous solution (using deionized ultrapure water with electrical resistivity of 18.2 MΩ cm2/cm), at potentials of 1.430, 1.480 and 1.530 VSHE (Ag/AgCl reference electrode placed directly in the 1 M HClO4 electrolyte close to the sample) for approximately one day. To

Characterization and properties of micro- and nanowires of controlled size, composition, and geometry fabricated by electrodeposition and ion-track technology

• Maria Eugenia Toimil-Molares

Beilstein J. Nanotechnol. 2012, 3, 860–883, doi:10.3762/bjnano.3.97

• , including investigations on electrical resistivity, surface plasmon resonances, and thermal instability. Keywords: electrodeposition; etched ion-track membrane; finite-size effects; heavy ion irradiation; nanowire; radiation-induced nanostructures; Introduction During the past decade, nanowires have

• lithographic techniques. Electrical resistivity of individual lithographically contacted Cu nanowires monitored over many hours revealed the critical problem of oxidation. During the measurement, the wire resistance increased from a few hundred ohms to several megaohms. Due to oxidation, the nanowire

• μm [133][134][135]. Figure 15 and Figure 16 display the specific electrical resistivity of individual nanowires as a function of the nanowire diameter for Bi and

Revealing thermal effects in the electronic transport through irradiated atomic metal point contacts

• Bastian Kopp,
• Zhiwei Yi,
• Daniel Benner,
• Fang-Qing Xie,
• Christian Obermair,
• Thomas Schimmel,
• Johannes Boneberg,
• Paul Leiderer and
• Elke Scheer

Beilstein J. Nanotechnol. 2012, 3, 703–711, doi:10.3762/bjnano.3.80

• gate-controlled quantum switch (GCQS), have been studied. We demonstrate that in these kinds of contacts thermal effects resulting from local heating due to the incident light, namely thermovoltage and the temperature dependences of the electrical resistivity and the electrochemical (Helmholtz) double

A facile approach to nanoarchitectured three-dimensional graphene-based Li–Mn–O composite as high-power cathodes for Li-ion batteries

• Wenyu Zhang,
• Yi Zeng,
• Chen Xu,
• Ni Xiao,
• Yiben Gao,
• Lain-Jong Li,
• Xiaodong Chen,
• Huey Hoon Hng and
• Qingyu Yan

Beilstein J. Nanotechnol. 2012, 3, 513–523, doi:10.3762/bjnano.3.59

• ions and reduce the electrical resistivity, coating LMO powders with another functional layer [3][4][15][16] can help. However, to achieve a uniform functional layer on the LMO powder surface still remains a technical challenge. The fabrication of nanoarchitectured 3D electrodes is a promising approach