A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• ; focused helium ion beam-induced deposition; focused helium ion beam milling; helium ion beam lithography; helium ion implantation; Introduction Since the helium ion microscope (HIM) was introduced 15 years ago [1][2][3], over one hundred HIMs have been installed worldwide and over one thousand research

• piezoelectricity has been patterned into multilayered MoTe2 [56]. In the case of helium ion irradiation of a bulk van der Waals layered ferroelectric semiconductor crystal (CuInP2S6), local volume expansion due to helium ion implantation was observed, forming a conical surface topography within which for

• overall damage evolution process was also noted. 2 Ion implantation Helium ion implantation and the associated structural changes to a material are often unwanted, with measures taken to avoid these effects. However, the HIM also offers a unique opportunity for fundamental studies of helium ion

Nano-structuring, surface and bulk modification with a focused helium ion beam

• Daniel Fox,
• Yanhui Chen,
• Colm C. Faulkner and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2012, 3, 579–585, doi:10.3762/bjnano.3.67

• the lamella. The purpose of this exposure geometry was to produce a wedge shape of silicon within the lamella so that we could observe the minimum thickness dimensions which can be fabricated by HIM. It also allows us to analyze the subsurface modification effects due to helium ion implantation. All