Scanning reflection ion microscopy in a helium ion microscope

• Yuri V. Petrov and
• Oleg F. Vyvenko

Beilstein J. Nanotechnol. 2015, 6, 1125–1137, doi:10.3762/bjnano.6.114

• detectable step height was found to be approximately 5 nm. RIM imaging of an insulator surface without the need for charge compensation was successfully demonstrated. Keywords: helium ion microscope; low-angle ion scattering; reflection microscopy; surface imaging; surface morphology; Introduction

• depth of focus for high quality imaging because of the glancing angle of incidence geometry. The helium ion microscope is a new scanning microscope with a single atom ion source that was developed in 2006 [12][13][14][15]. One of the main features of this device is a large depth of focus provided by a

• spectrometry [32][33], and ionoluminescence [34][35] were developed. In this paper we report on the development of the instrumentation and the analysis of the capabilities and limitations of scanning reflection ion microscopy (RIM) in a helium ion microscope. In the experimental part of our work we describe a

Fabrication of carbon nanomembranes by helium ion beam lithography

• Xianghui Zhang,
• Henning Vieker,
• André Beyer and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2014, 5, 188–194, doi:10.3762/bjnano.5.20

• of these films, too. This is related to changes in the chemical structures of the polymers [16][17]. Recently, the helium ion microscope (HIM) has been employed as an imaging and measurement tool for nanotechnology, for which the sub-nanometer sized ion probe and its resulting high brightness lead to

• degassed dimethylformamide (DMF) with ca. 10 mmol NBPT molecules for 72 h in a sealed flask under nitrogen atmosphere. Helium ion lithography and helium ion microscopy The experiments were conducted with a Carl Zeiss Orion Plus® helium ion microscope at room temperature. The irradiation of NBPT SAMs was

Digging gold: keV He⁺ ion interaction with Au

• Vasilisa Veligura,
• Gregor Hlawacek,
• Robin P. Berkelaar,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2013, 4, 453–460, doi:10.3762/bjnano.4.53

• crystals; helium ion microscopy; ion beam/solid interactions; vacancies in crystals; Introduction The helium ion microscope allows the projection of a He+ beam of several tens of kiloelectronvolts with a diameter of 0.4 nm [1] onto a sample. This makes HIM an attractive tool for surface patterning and

• formation, as a function of ion fluence and energy. Experimental The experiments were performed with an ultrahigh vacuum (UHV) Orion® Plus Helium Ion Microscope from Carl Zeiss NTS [15] at room temperature. As a result of the interaction of the He+ beam with the target, secondary electrons (SE

Nano-structuring, surface and bulk modification with a focused helium ion beam

• Daniel Fox,
• Yanhui Chen,
• Colm C. Faulkner and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2012, 3, 579–585, doi:10.3762/bjnano.3.67

• focused helium ion beam to selectively modify and mill materials. The sub nanometer probe size of the helium ion microscope used provides lateral control not previously available for helium ion irradiation experiments. At high incidence angles the helium ions were found to remove surface material from a

• modification. Helium ion irradiation is a widely studied field in nuclear physics. Helium ion irradiation has been used to modify mechanical [31], optical [25] and magnetic [32] properties of surfaces. The highly focused probe of the helium ion microscope provides a greater level of spatial control than

• crystal structure. The resolution of the FIB is limited by the energy spread of the gallium ions generated from the liquid metal ion source (LMIS). The sputter yield is also too large for acute patterning control over very short lateral distances. The recently developed Carl Zeiss Orion Plus helium ion

Imaging ultra thin layers with helium ion microscopy: Utilizing the channeling contrast mechanism

• Gregor Hlawacek,
• Vasilisa Veligura,
• Stefan Lorbek,
• Tijs F. Mocking,
• Antony George,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2012, 3, 507–512, doi:10.3762/bjnano.3.58

• ion microscopy; ion scattering; thin layers; Introduction The helium ion microscope (HIM) has established itself as a high-performance alternative to the classic scanning electron microscope (SEM). The superior resolution and the outstanding performance on insulating samples are well-known facts [1

• recorded on an ultrahigh vacuum (UHV) Orion Plus helium ion microscope from Zeiss [5]. The microscope is equipped with an Everhardt–Thornley (ET) detector to record SE images, and a microchannel plate situated in the beam path below the final lens to record BSHe images. A silicon drift detector to measure

Channeling in helium ion microscopy: Mapping of crystal orientation

• Vasilisa Veligura,
• Gregor Hlawacek,
• Raoul van Gastel,
• Harold J. W. Zandvliet and
• Bene Poelsema

Beilstein J. Nanotechnol. 2012, 3, 501–506, doi:10.3762/bjnano.3.57

• considerations are in fact sufficient. Experimental All images were recorded on an ultrahigh vacuum (UHV) Orion Plus helium ion microscope from Carl Zeiss [4]. The microscope is equipped with an Everhardt–Thornley (ET) detector to record SE images. A micro channel plate, which is placed in the beam path below

• images. Secondary electron images can be used to extract crystallographic information from bulk samples as well as from thin surface layers, in a straightforward manner. Keywords: channeling; crystallography; helium ion microscopy; ion scattering; Introduction The superior resolution of the helium ion

• microscope (HIM) and its outstanding performance on insulating samples [1][2] make it an interesting tool for materials research. Whilst images based on secondary electrons (SE) can yield an edge resolution down to 0.29 nm [2], backscattered helium (BSHe) images reveal the elemental composition of the