Evaluating metal-organic precursors for focused ion beam-induced deposition through solid-layer decomposition analysis

• Benedykt R. Jany,
• Katarzyna Madajska,
• Aleksandra Butrymowicz-Kubiak,
• Franciszek Krok and
• Iwona B. Szymańska

Beilstein J. Nanotechnol. 2025, 16, 1942–1951, doi:10.3762/bjnano.16.135

• -dispersive X-ray spectroscopy (EDX); focused ion beam (FIB); focused ion beam-induced deposition (FIBID); machine learning; scanning electron microscopy (SEM); Introduction A variety of nanomanufacturing techniques, such as optical and electron-beam lithography, nanoimprint lithography, atomic layer

Quantum circuits with SINIS structures

• Mikhail Tarasov,
• Mikhail Fominskii,
• Aleksandra Gunbina,
• Artem Krasilnikov,
• Maria Mansfeld,
• Dmitrii Kukushkin,
• Andrei Maruhno,
• Valeria Ievleva,
• Mikhail Strelkov,
• Daniil Zhogov,
• Konstantin Arutyunov,
• Vyacheslav Vdovin,
• Vladislav Stolyarov and
• Valerian Edelman

Beilstein J. Nanotechnol. 2025, 16, 1931–1941, doi:10.3762/bjnano.16.134

• different layers of superconducting aluminum and normal metal (e.g., copper). In case of chemical wet etching, this is achieved through an alkali and acid pair, for dry etching, chlorine and fluorine plasmas are used. Alternatively, in the case of magnetron sputtering and separate lithography, ion etching

• magnetron sputtering with separate lithography, and (f) single SINIS detector with suspended Hf absorber. Aharonov–Bohm structure. (а) SEM image of the sample made by Manhattan-type SINIS fabrication and (b) I–V curve and dynamic resistance of the Aharonov–Bohm interferometer at 330 mK. NIS thermometer

• series array. (a) Schematic view of a thermometer with a chain of 20 NIS junctions and SEM images of thermometers made by (b) Manhattan technology and (c) magnetron sputtering with separate lithography technology. (a) Ratio of resistance at zero bias to the asymptotic resistance using Equation 7

Laser processing in liquids: insights into nanocolloid generation and thin film integration for energy, photonic, and sensing applications

• Akshana Parameswaran Sreekala,
• Pooja Raveendran Nair,
• Jithin Kundalam Kadavath,
• Bindu Krishnan,
• David Avellaneda Avellaneda,
• M. R. Anantharaman and
• Sadasivan Shaji

Beilstein J. Nanotechnol. 2025, 16, 1428–1498, doi:10.3762/bjnano.16.104

Wavelength-dependent correlation of LIPSS periodicity and laser penetration depth in stainless steel

• Nitin Chaudhary,
• Chavan Akash Naik,
• Shilpa Mangalassery,
• Jai Prakash Gautam and
• Sri Ram Gopal Naraharisetty

Beilstein J. Nanotechnol. 2025, 16, 1302–1315, doi:10.3762/bjnano.16.95

• promising alternative to high-precision lithography techniques [1][2][3]. The utilization of short femtosecond laser pulses has proven instrumental in overcoming diffraction limit restrictions, enabling controlled fabrication of periodic subwavelength structures [4][5][6][7][8][9]. This controlled

Nanostructured materials characterized by scanning photoelectron spectromicroscopy

• Matteo Amati,
• Alexey S. Shkvarin,
• Alexander I. Merentsov,
• Alexander N. Titov,
• María Taeño,
• David Maestre,
• Sarah R. McKibbin,
• Zygmunt Milosz,
• Ana Cremades,
• Rainer Timm and
• Luca Gregoratti

Beilstein J. Nanotechnol. 2025, 16, 700–710, doi:10.3762/bjnano.16.54

• composition and the surface potential across InP nanowire p–n junctions for individual nanowire devices. InP nanowires were grown on InP(111) substrates by vapor–liquid–solid growth using nanoimprint lithography for generating catalytic Au nanoparticles in a metal–organic vapor phase epitaxy (MOVPE) reactor

Focused ion and electron beams for synthesis and characterization of nanomaterials

• Aleksandra Szkudlarek

Beilstein J. Nanotechnol. 2025, 16, 613–616, doi:10.3762/bjnano.16.47

• Aleksandra Szkudlarek Academic Centre for Materials and Nanotechnology, AGH University of Krakow, av. Mickiewicza 30, 30-059, Krakow, Poland 10.3762/bjnano.16.47 Keywords: deposition; etching; focused electron beams; focused ion beams; lithography; milling; nanofabrication; 3D nanostructures; It

• underdeveloped technology at that time. In his visionary address, he proposed techniques such as direct ion lithography using focused beams and introduced the concept of combined photo-electron lithography. Feynman's contribution was not limited to his visionary approach of advancing technology through

Polyurethane/silk fibroin-based electrospun membranes for wound healing and skin substitute applications

• Iqra Zainab,
• Zohra Naseem,
• Syeda Rubab Batool,
• Muhammad Waqas,
• Ahsan Nazir and
• Muhammad Anwaar Nazeer

Beilstein J. Nanotechnol. 2025, 16, 591–612, doi:10.3762/bjnano.16.46

• functionalization of SF facilitate its usage in optics as a biosensor and implantable device [92]. Malinowski et al. showed that conventional transparent films often lack adequate haze, but SF films exhibit ultrahigh optical transparency (>93%) and transmission haze (>65%). In this study, soft lithography was used

Electron beam-based direct writing of nanostructures using a palladium β-ketoesterate complex

• Chinmai Sai Jureddy,
• Krzysztof Maćkosz,
• Aleksandra Butrymowicz-Kubiak,
• Iwona B. Szymańska,
• Patrik Hoffmann and
• Ivo Utke

Beilstein J. Nanotechnol. 2025, 16, 530–539, doi:10.3762/bjnano.16.41

• , though they follow a two-step process similar to lithography techniques [26]. Since the dissociation of molecules under an electron beam on the substrate can follow multiple pathways, the deposition parameters can greatly influence the composition, leading to the creation of novel materials [27

Orientation-dependent photonic bandgaps in gold-dust weevil scales and their titania bioreplicates

• Norma Salvadores Farran,
• Limin Wang,
• Primoz Pirih and
• Bodo D. Wilts

Beilstein J. Nanotechnol. 2025, 16, 1–10, doi:10.3762/bjnano.16.1

• copolymers [10][11], lithography, or laser etching [12][13], but it can be routinely found in animal integuments. Biomimetic approaches using templates from natural structures offers a possible alternative. The scales of many beetles and weevils contain diamond photonic crystals [14][15][16] that may serve

Fabrication of hafnium-based nanoparticles and nanostructures using picosecond laser ablation

• Abhishek Das,
• Mangababu Akkanaboina,
• Jagannath Rathod,
• R. Sai Prasad Goud,
• Kanaka Ravi Kumar,
• Raghu C. Reddy,
• Ratheesh Ravendran,
• Katia Vutova,
• S. V. S. Nageswara Rao and
• Venugopal Rao Soma

Beilstein J. Nanotechnol. 2024, 15, 1639–1653, doi:10.3762/bjnano.15.129

• desired morphology is essential for a given application. Generally, practical techniques for obtaining nanomaterials are sol–gel method, chemical and physical vapour deposition, hydrothermal method, ball milling, grinding, lithography, etching, and laser ablation [14][15][16][17][18]. The morphology

Green synthesis of silver nanoparticles derived from algae and their larvicidal properties to control Aedes aegypti

• Matheus Alves Siqueira de Assunção,
• Douglas Dourado,
• Daiane Rodrigues dos Santos,
• Gabriel Bezerra Faierstein,
• Mara Elga Medeiros Braga,
• Severino Alves Junior,
• Rosângela Maria Rodrigues Barbosa,
• Herminio José Cipriano de Sousa and
• Fábio Rocha Formiga

Beilstein J. Nanotechnol. 2024, 15, 1566–1575, doi:10.3762/bjnano.15.123

• electrical, optical, and magnetic properties for a wide range of applications [22][23]. They can be synthesized by different procedures based on “top-down” or “bottom-up” approaches [24] (Figure 1). Top-down synthesized silver nanoparticles can be obtained by lithography, attrition, milling, and other

• residues in the environment [30]. Physical methods include laser ablation, UV irradiation, evaporation condensation, aerosol methods, and lithography. High cost, high energy consumption, and expensive equipment make these techniques uneconomical [31]. Because of these disadvantages, synthesis methods based

Ion-induced surface reactions and deposition from Pt(CO)₂Cl₂ and Pt(CO)₂Br₂

• Mohammed K. Abdel-Rahman,
• Patrick M. Eckhert,
• Atul Chaudhary,
• Johnathon M. Johnson,
• Jo-Chi Yu,
• Lisa McElwee-White and
• D. Howard Fairbrother

Beilstein J. Nanotechnol. 2024, 15, 1427–1439, doi:10.3762/bjnano.15.115

• techniques, they do not require the use of organic solvents present in traditional lithography. Indeed, FEBID/FIBID can be considered as alternatives to commonly used methods such as chemical vapor deposition (CVD) and atomic layer deposition (ALD), particularly for area-selective, as opposed to conformal

Out-of-plane polarization induces a picosecond photoresponse in rhombohedral stacked bilayer WSe₂

• Guixian Liu,
• Yufan Wang,
• Zhoujuan Xu,
• Zhouxiaosong Zeng,
• Lanyu Huang,
• Cuihuan Ge and
• Xiao Wang

Beilstein J. Nanotechnol. 2024, 15, 1362–1368, doi:10.3762/bjnano.15.109

• monolayers of WSe2 were aligned at a 0° angle to form the 3R phase. The graphene/3R WSe2/graphene heterojunctions were aligned and assembled onto a SiO2/Si substrate by the all-dry transfer method. Au/Cr (50/10 nm) electrodes were patterned using standard electron-beam lithography (EBL, Raith 150 Two) and

Investigation of Hf/Ti bilayers for the development of transition-edge sensor microcalorimeters

• Victoria Y. Safonova,
• Anna V. Gordeeva,
• Anton V. Blagodatkin,
• Dmitry A. Pimanov,
• Anton A. Yablokov and
• Andrey L. Pankratov

Beilstein J. Nanotechnol. 2024, 15, 1353–1361, doi:10.3762/bjnano.15.108

• different geometries were investigated in a continuation of [10], in which thin films of both pure hafnium and hafnium in combination with normal metals were considered. It is expected that an additional processing operation (lithography and lift-off process) to form the bridges may degrade their properties

• , photolithography was performed on a Karl Suss MJB3 lithography aligner before deposition. We used AZ5214E photoresist, which was subsequently developed with MIF726. We then deposited 85 nm of hafnium and 5 nm of titanium onto the substrates through developed areas in the resist, using an electron beam evaporator

Effect of wavelength and liquid on formation of Ag, Au, Ag/Au nanoparticles via picosecond laser ablation and SERS-based detection of DMMP

• Sree Satya Bharati Moram,
• Chandu Byram and
• Venugopal Rao Soma

Beilstein J. Nanotechnol. 2024, 15, 1054–1069, doi:10.3762/bjnano.15.86

• detection of DMMP (1.2 ppm V) in the vapor phase using Glass_Ag_Au NPs, 3D fractal microstructure substrates developed by corner lithography and anisotropic wet etching of silicon using the 785 nm as the Raman excitation. When UV excitation was utilized during the measurements, the Raman peak intensities

Bolometric IR photoresponse based on a 3D micro-nano integrated CNT architecture

• Yasameen Al-Mafrachi,
• Sandeep Yadav,
• Sascha Preu,
• Jörg J. Schneider and
• Oktay Yilmazoglu

Beilstein J. Nanotechnol. 2024, 15, 1030–1040, doi:10.3762/bjnano.15.84

• -density, mainly double-walled CNTs with simple lateral external contacts to the surroundings. Standard optical lithography techniques were used to locally tailor the width of the vertical block structure. The complete sensor system, based on a broadband blackbody absorber region and a high-resistance

• stability and reliable operation at elevated temperatures in excess of 200 °C, extending its potential utility in challenging environmental conditions. This design allows for further device miniaturization using optical lithography techniques. Its unique properties for mass production through large-scale

• was deposited by atomic layer deposition to support the elongated growth of CNTs (Figure 1a). The contact pad regions were opened by an optical lithography process prior to the evaporation of Cr/Au (20 nm, e-beam/100 nm, thermal) (Figure 1b). The overall M-shape for the CNT growth as shown in Figure

Recent progress on field-effect transistor-based biosensors: device perspective

• Billel Smaani,
• Fares Nafa,
• Mohamed Salah Benlatrech,
• Ismahan Mahdi,
• Hamza Akroum,
• Mohamed walid Azizi,
• Khaled Harrar and
• Sayan Kanungo

Beilstein J. Nanotechnol. 2024, 15, 977–994, doi:10.3762/bjnano.15.80

• -care diagnostic systems. This device was realized using a top-to-down approach with an anisotropic and cost-effective self-stop etching method [85][86]. A novel CMOS anisotropic technique was implemented for the etching process, combining classical optical and electron beam lithography with anisotropic

• CMOS technology, combined with optical lithography and an anisotropic self-stop etching method [88][89]. The incorporated P- and N-type NWs showed complementary electrical responses upon prostate-specific antigen binding, providing a unique means of internal command for biosensing signal verification

• -end biosensing parts are made using gold electrode material and manufactured by a lithography process, liftoff technique, and metal evaporation process. It has been indicated that the proposed EG FET-based biosensors exhibit super selectivity and high sensitivity for a reliable detection of uric acid

Beyond biomimicry – next generation applications of bioinspired adhesives from microfluidics to composites

• Dan Sameoto

Beilstein J. Nanotechnol. 2024, 15, 965–976, doi:10.3762/bjnano.15.79

• lithography; Perspective As of the time of this writing, it has been 24 years since the seminal work by Kellar Autumn and his colleagues demonstrated how a single gecko foot hair could generate adhesion [1]. Autumn’s discovery that van der Waals forces were the primary mechanism behind the extraordinary

• draws inspiration from nature, as it is quite common for many animals to include multiple adhesion mechanisms. Between multimaterial 3D printing and the use of newer techniques to precisely define micro/nanofeatures [34] that are beyond the capabilities of traditional lithography, there is a good deal

Water-assisted purification during electron beam-induced deposition of platinum and gold

• Cristiano Glessi,
• Fabian A. Polman and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 884–896, doi:10.3762/bjnano.15.73

• orientation) with a native silicon oxide layer. Samples of 1 × 1 cm2 were used, on to which an array of annular patterns was lithographically defined, by laser lithography and etching using an SF6–O2 dry-etch, to facilitate location of the deposition areas. The substrates were roughly cleaned in acetone and

Elastic modulus of β-Ga₂O₃ nanowires measured by resonance and three-point bending techniques

• Annamarija Trausa,
• Sven Oras,
• Sergei Vlassov,
• Mikk Antsov,
• Tauno Tiirats,
• Andreas Kyritsakis,
• Boris Polyakov and
• Edgars Butanovs

Beilstein J. Nanotechnol. 2024, 15, 704–712, doi:10.3762/bjnano.15.58

• photoresist on the wafer using conventional optical lithography. Next, the SiO2 was selectively removed using a buffered HF solution to replicate the resist pattern in the oxide layer. Then, the silicon was etched at 90 °C in a tetramethylammonium hydroxide (TMAH) solution to create etch pits. Finally, the

Sidewall angle tuning in focused electron beam-induced processing

• Sangeetha Hari,
• Willem F. van Dorp,
• Johannes J. L. Mulders,
• Piet H. F. Trompenaars,
• Pieter Kruit and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 447–456, doi:10.3762/bjnano.15.40

• etching the deposit from below, resulting in under-etched structures. The evolution of the sidewall angle during etching has also been experimentally observed in a scanning electron microscope by continuously monitoring the secondary electron detector signal. Keywords: electron lithography; FEBID; FEBIE

• using focused ion beam (FIB) milling and shown as an electron tilt image in Figure 1b, clearly demonstrates the Gaussian shape. For lithography applications, however, both the long tails and the Gaussian cross section are highly undesirable. The tails may form interconnects to neighboring lines, and the

• which the sidewall angle becomes 90°. The method described here to make vertical sidewalls of FEBID deposits has the potential to make FEBIP a more competitive technology for lithography applications. Experimental The FEBID and FEBIE experiments were carried out in a Thermo Fisher Scientific Helios 650

Heat-induced morphological changes in silver nanowires deposited on a patterned silicon substrate

• Elyad Damerchi,
• Sven Oras,
• Edgars Butanovs,
• Allar Liivlaid,
• Mikk Antsov,
• Boris Polyakov,
• Annamarija Trausa,
• Veronika Zadin,
• Andreas Kyritsakis,
• Loïc Vidal,
• Karine Mougin,
• Siim Pikker and
• Sergei Vlassov

Beilstein J. Nanotechnol. 2024, 15, 435–446, doi:10.3762/bjnano.15.39

• silicon substrates with square holes were prepared from (100) silicon wafers (Semiconductor Wafer, Inc.) with 50 nm thermal oxide in four steps as follows: 1) conventional optical lithography process to produce the desired pattern in a photoresist on the wafer; 2) selective removal of SiO2 using buffered

On the mechanism of piezoresistance in nanocrystalline graphite

• Sandeep Kumar,
• Simone Dehm and
• Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

• in the structure shown in Figure 1b using e-beam lithography. There were no metal films deposited on NCG, and the electrical contact was made between gold spring contacts and NCG directly. For Raman measurements, S1805 (1:10 dilution with PGMEA) was spin-coated on both sides of the flexible glass

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• -beam lithography and reactive-ion etching. We simulate the electromagnetic response of the meandering nanowire inductors using Sonnet, a quasi-3D electromagnetic simulator [32], which has the feature of including sheet kinetic inductance Lk,□. We begin by simulating the meandering inductor itself to

• -ion etch (RIE) process in a Plasmapro 100 ICP300 from Oxford Instruments, with an etch rate of roughly 8 nm/min. (e) Fine circuit pattern. Electron-beam lithography defines the finer structures, such as the meandering nanowire inductor, the shunt inductor, and the interdigital gap of the capacitor. We

• etch under the triangular silicon nitride plate and form a very straight clamping line to the Si substrate. However, the KOH etch is slow compared to the isotropic RIE process and attacks the Nb-Ti-N superconducting film. An additional lithography step was needed to protect the superconducting circuit

Ion beam processing of DNA origami nanostructures

• Leo Sala,
• Agnes Zerolová,
• Violaine Vizcaino,
• Alain Mery,
• Alicja Domaracka,
• Hermann Rothard,
• Philippe Boduch,
• Dominik Pinkas and
• Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

• by ion beams, modeling ion implantation, lithography, and sputtering conditions. Structural changes in 2D DNA origami nanostructures deposited on Si are analyzed using AFM imaging. The observed effects on DNA origami include structure height decrease or increase upon fast heavy ion irradiation in

• in the present context are works on the use of DNA origami nanostructures in top-down or bottom-up nanopatterning approaches [7][8][9][10]. So far, DNA origami has been proposed only as a resist or as a platform to precisely arrange nanostructure precursors in lithography [11][12][13]. Incorporating

• origami but also their transformation upon irradiation. FIB processing Inspired by the shape preservation of DNA origami nanostructures under ion beam irradiation, we explored the damage response under a conventional focused ion beam typically used in lithography. Lines of about ∼140 nm in width ∼40 nm in