Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Eleonora M. Danilina and
• Sergei N. Chebotarev

Beilstein J. Nanotechnol. 2018, 9, 2794–2801, doi:10.3762/bjnano.9.261

• . It is shown that isovalent doping of GaAs potential barriers by bismuth was accompanied by a red-shift of the photoluminescence peak of InAs quantum dots of 121 meV. Keywords: infrared photodetectors; ion-beam deposition; nanoheterostructures; photoluminescence; quantum dot; semiconductors

• ; Introduction The formation of III–V nanoheterostructures with quantum dots (QDs) raises the possibility of developing a new generation of photodetectors in the infrared range [1][2][3]. The significant problems of existing HgCdTe detectors are low yield and high cost in comparison with quantum-well infrared

• other researchers described the first method in [20][21][22][23]. Mechanical strains are a technological problem in the development of effective IR devices based on InAs/GaAs nanoheterostructures with vertically stacked QD layers [24][25]. The surface density and geometric sizes of InAs quantum dots

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

• Sergei N. Chebotarev,
• Alexander S. Pashchenko,
• Leonid S. Lunin,
• Elena N. Zhivotova,
• Georgy A. Erimeev and
• Marina L. Lunina

Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2

• doping profiles higher than 1018 cm3 were not obtained as a result of these processes. Photoluminescence The influence of the SnTe doping of the GaAs barrier layer on the photoluminescence of the grown InAs/GaAs nanoheterostructures was studied. The measurements were performed at a temperature of 90 K

• the barrier layer to 1018 cm−3 reduces the voltage at which the change of the transport mechanism can been observed to 0.47 V. Conclusion The results of the experimental studies of crystallization of InAs-QD/GaAs(001) quantum-dot nanoheterostructures obtained by ion beam sputtering are presented and

Influence of wide band gap oxide substrates on the photoelectrochemical properties and structural disorder of CdS nanoparticles grown by the successive ionic layer adsorption and reaction (SILAR) method

• Mikalai V. Malashchonak,
• Alexander V. Mazanik,
• Olga V. Korolik,
• Еugene А. Streltsov and
• Anatoly I. Kulak

Beilstein J. Nanotechnol. 2015, 6, 2252–2262, doi:10.3762/bjnano.6.231

• General and Inorganic Chemistry, National Academy of Sciences of Belarus, Surganov St. 9/1, 220072 Minsk, Belarus 10.3762/bjnano.6.231 Abstract The photoelectrochemical properties of nanoheterostructures based on the wide band gap oxide substrates (ZnO, TiO2, In2O3) and CdS nanoparticles deposited by the