Beilstein J. Nanotechnol.2019,10, 1401–1411, doi:10.3762/bjnano.10.138
preparation and characterization of metallic nanoinclusions on the surface of semiconducting Bi2Se3 that could be used for an enhancement of the efficiency of thermoelectric materials. We used Au forming a 1D alloy through diffusion (point nanoinclusion) and Mo forming thermodynamically stable layered MoSe2
revealed that long-time exposure (tens of seconds) to the electrical field leads to deep oxidation and the formation of perturbations greater than 1 µm in height, which hinder the I–V measurements.
Keywords: Kelvin probe atomic force microscope; nanoinclusion; Schottky barrier; thermoelectric materials
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Figure 1:
(A) Topographical and (B) phase-shift image, and (C) surface contact potential map of Au nanopartic...