Modulated critical currents of spin-transfer torque-induced resistance changes in NiCu/Cu multilayered nanowires

• Mengqi Fu,
• Roman Hartmann,
• Julian Braun,
• Sergej Andreev,
• Torsten Pietsch and
• Elke Scheer

Beilstein J. Nanotechnol. 2024, 15, 360–366, doi:10.3762/bjnano.15.32

• (Imicro), the transverse instability makes the magnetization change along the interface, opening low-resistivity paths for both spin-up and spin-down electrons at different spatial positions of the magnetic layer, and thus reduces (dV/dI)red. The current densities of Ic+, Ic−, and Imicro are estimated to

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• simulation and experiment. Electrical mode From the measured normal-state resistance of our nanowires and the measured thickness and width, we find a sheet resistance R□ = 243 Ω/□, corresponding to a resistivity of ρn = 365 μΩ cm. We monitor the microwave response during cool-down and estimate a critical

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

• Gabriela Lewińska,
• Piotr Jeleń,
• Zofia Kucia,
• Maciej Sitarz,
• Łukasz Walczak,
• Bartłomiej Szafraniak,
• Jerzy Sanetra and
• Konstanty W. Marszalek

Beilstein J. Nanotechnol. 2024, 15, 144–156, doi:10.3762/bjnano.15.14

• was determined. The resistivity of the layers was determined using impedance spectroscopy. Simulations (General-Purpose Photovoltaic Device Model) showed a performance improvement in the cells with quantum dots of 0.36–1.45% compared to those without quantum dots. Keywords: efficiency; luminescence

• system is mainly caused by the many times reduced resistivity, demonstrated by the impendance spectroscopy results. Absolute values of efficiency growth for the investigated doped QD cells are about 1–2%. However, counting the percentage increase, these small values represent an increase of 10–20% over

A combined gas-phase dissociative ionization, dissociative electron attachment and deposition study on the potential FEBID precursor [Au(CH₃)₂Cl]₂

• Elif Bilgilisoy,
• Ali Kamali,
• Thomas Xaver Gentner,
• Gerd Ballmann,
• Sjoerd Harder,
• Hans-Peter Steinrück,
• Hubertus Marbach and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2023, 14, 1178–1199, doi:10.3762/bjnano.14.98

• (trifluorophosphine)gold(I) (AuICl(PF3)) [23]. These precursors have enabled depositions of ≈95 atom % Au and a resistivity of Au grains as low as 22 µΩ, respectively. However, the short lifetime of both precursors, which results from their moisture sensitivity and thermal instability, has limited their applicability

A multi-resistance wide-range calibration sample for conductive probe atomic force microscopy measurements

• François Piquemal,
• Khaled Kaja,
• Pascal Chrétien,
• José Morán-Meza,
• Frédéric Houzé,
• Christian Ulysse and
• Abdelmounaim Harouri

Beilstein J. Nanotechnol. 2023, 14, 1141–1148, doi:10.3762/bjnano.14.94

• wide) electrode arms designed for local C-AFM imaging and spectroscopic measurements. The gold lines’ dimensions were characterized for calculating their intrinsic resistances using the gold resistivity value. Calibration of SMD resistors and gold lines Before conducting C-AFM measurements, the

• segments, Ri,seg, in the central zone of the sample, and the resistance of the wiring, Rwire, between the two probes and the DVM. Considering the dimensions of the line segments and the measured resistivity of the deposited gold lines (ρ = (31.4 ± 0.4) × 10−9 Ω·m), we calculated three correction

Silver-based SERS substrates fabricated using a 3D printed microfluidic device

• Phommachith Sonexai,
• Minh Van Nguyen,
• Bui The Huy and
• Yong-Ill Lee

Beilstein J. Nanotechnol. 2023, 14, 793–803, doi:10.3762/bjnano.14.65

• (USA). Deionized water with a resistivity of 18 MΩ·cm−1, provided by a Milli-Q water purification system (Millipore Corp., MA, USA), was used throughout all the experiments. The morphologies of Ag NPs and SERS substrates were examined using a field-emission scanning electron microscope (FE-SEM, Mira II

• centrifuged at 12,000 rpm for 5 min to separate the Ag NPs solution and remove the oil phase. Finally, the Ag NPs suspension was stored in a dark vial at room temperature for further experiments. Fabrication of porous silicon (PS) substrate A p-type Si(100) wafer with a resistivity of 0.01–0.09 Ω·cm was used

Metal-organic framework-based nanomaterials as opto-electrochemical sensors for the detection of antibiotics and hormones: A review

• Akeem Adeyemi Oladipo,
• Saba Derakhshan Oskouei and
• Mustafa Gazi

Beilstein J. Nanotechnol. 2023, 14, 631–673, doi:10.3762/bjnano.14.52

• might produce localization of donor states close to the aromatic ring, were suggested as the source of the bandgap modulation due to changes in the functionality of the organic linker [82]. Due to MOFs’ low resistivity and rapid charge carrier mobility, some researchers [80][81][82][83] have recently

• behaviour even further. Through variation in temperature resistivity, Clough et al. [83] demonstrated band-like metallic conductivity in cobalt-based MOF. The ferroelectric characteristics of MOFs have not yet been extensively investigated experimentally. However, calculations based on density functional

ZnO-decorated SiC@C hybrids with strong electromagnetic absorption

• Liqun Duan,
• Zhiqian Yang,
• Yilu Xia,
• Xiaoqing Dai,
• Jian’an Wu and
• Minqian Sun

Beilstein J. Nanotechnol. 2023, 14, 565–573, doi:10.3762/bjnano.14.47

• stability, chemical corrosion resistance, and high strength. Hence, it has received a lot of attention [5][6][7]. Because of the high resistivity and the low dielectric parameters of traditionally prepared SiC, its EM absorption is poor [8]. According to existing literature reports, the electromagnetic

Concentration-dependent photothermal conversion efficiency of gold nanoparticles under near-infrared laser and broadband irradiation

• Vikas,
• Raj Kumar and
• Sanjeev Soni

Beilstein J. Nanotechnol. 2023, 14, 205–217, doi:10.3762/bjnano.14.20

• -CTAB-DIH-1-25) were purchased from Nanopartz Inc. Suspensions with different concentrations of these GNPs were prepared by using ultrapure water (18.1 MΩ resistivity). Plasmonic photothermal measurements The photothermal experiments were performed by adding a 1.5 mL volume of different GNP

Liquid phase exfoliation of talc: effect of the medium on flake size and shape

• Samuel M. Sousa,
• Helane L. O. Morais,
• Joyce C. C. Santos,
• Ana Paula M. Barboza,
• Bernardo R. A. Neves,
• Elisângela S. Pinto and
• Mariana C. Prado

Beilstein J. Nanotechnol. 2023, 14, 68–78, doi:10.3762/bjnano.14.8

• was manually milled to a fine powder. Sodium cholate and Triton-X100 were purchased from Sigma-Aldrich and used as received. All organic solvents were of analytical grade and used as received. Deionized water (resistivity 18.2 MΩ·cm) from a milliQ system was used for solution preparation. AFM

Solvent-induced assembly of mono- and divalent silica nanoparticles

• Bin Liu,
• Etienne Duguet and
• Serge Ravaine

Beilstein J. Nanotechnol. 2023, 14, 52–60, doi:10.3762/bjnano.14.6

• ), and sodium hydroxide (≥98%, pellets, Sigma-Aldrich) were used as received. Ultrapure water with a resistivity of 18.2 MΩ·cm at 25 °C obtained from a Milli-Q system (Millipore) was also systematically used. Absolute ethanol and tetrahydrofuran (>99%) were purchased from VWR Chemicals. Synthesis of

Upper critical magnetic field in NbRe and NbReN micrometric strips

• Zahra Makhdoumi Kakhaki,
• Antonio Leo,
• Federico Chianese,
• Loredana Parlato,
• Giovanni Piero Pepe,
• Angela Nigro,
• Carla Cirillo and
• Carmine Attanasio

Beilstein J. Nanotechnol. 2023, 14, 45–51, doi:10.3762/bjnano.14.5

• the electrical resistivity [6]. This feature is related to the polycrystalline or amorphous nature of these materials when deposited in a thin-film form [4][7][8]. In addition to the applicative interest, the study of these materials is relevant from a fundamental point of view. NbxRe1−x (NbRe) for

• is still lacking. Finally, while the morphological properties are similar to those of NbRe films [18], the values of the electrical resistivity stand slightly higher with respect to NbRe films [4][7][18]. The value of the upper critical magnetic field is a fundamental quantity that gives a measure of

• resistance at 10 K. Results and Discussion Figure 1 displays the normalized resistive transitions in zero magnetic field of the NbRe and NbReN microstrips. The critical temperature, the low-temperature resistivity, and the residual resistivity ratio (RRR) are reported for both microstrips in Table 1. The RRR

Electrical and optical enhancement of ITO/Mo bilayer thin films via laser annealing

• Abdelbaki Hacini,
• Ahmad Hadi Ali,
• Nurul Nadia Adnan and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2022, 13, 1589–1595, doi:10.3762/bjnano.13.133

• transmittance of 94% and increased the bandgap energy from 2.76 to 2.88 eV at 120 mJ. The annealing treatment decreased the resistivity from 15.63 × 10−4 to 1.73 × 10−4 Ω/cm−1. Additionally, the figure of merit of the ITO/Mo structure improved significantly from 6.63 × 10−4 Ω−1 of the as-deposited sample to

• to improve the performance of optoelectronic devices. One of these materials is indium tin oxide (ITO), which combines high transparency with high conductivity [7][8]. However, a single layer of as-deposited ITO shows a high resistivity. Consequently, inserting a very thin metal film layer can

• adherence to the substrate, very high thermal stability (up to 600 °C), and high electrical conductivity [14]. Over the last decades, the development of solar cells has grown dramatically. The cells have become larger, thinner, and lighter. This increases the electrical resistivity, which is undesirable

Enhanced electronic transport properties of Te roll-like nanostructures

• E. R. Viana,
• N. Cifuentes and
• J. C. González

Beilstein J. Nanotechnol. 2022, 13, 1284–1291, doi:10.3762/bjnano.13.106

• nanostructures [11][12][13][14]. Te NTs have shown metallic character and decreasing electrical resistivity with temperature [11]. Te NWs encapsulated in boron nitride nanotubes have shown a large current-carrying capacity and p-type semiconducting characteristics, which can be reversed to n-type behavior after

• -nanostructure back-gate FETs, as well as the electrical resistivity of the nanostructures as a function of temperature from 5 to 400 K. The transport measurements were carried out in a low-noise custom-made system for electrical characterization of FET devices [16][17][18]. FET devices were built by laser

• = dIds/dVg is the transconductance, ρ is the resistivity, Cox is the gate capacitance, and e is the electron charge. For a flat nanostructure, the gate capacitance can be obtained by a simple parallel-plate approximation, given by Cox = ε0(εav)wL/dSiO2 and ρ = (R·w·t/L). Here, ε0 is the permittivity of

Hierarchical Bi₂WO₆/TiO₂-nanotube composites derived from natural cellulose for visible-light photocatalytic treatment of pollutants

• Zehao Lin,
• Zhan Yang and
• Jianguo Huang

Beilstein J. Nanotechnol. 2022, 13, 745–762, doi:10.3762/bjnano.13.66

• obtained from the Milli-Q Advantage A 10 system (Millipore, Bedford, MA, USA), displaying a resistivity of 18.2 MΩ·cm. Preparation of Bi2WO6/TiO2-NT nanocomposites The fabrication process of cellulose-derived Bi2WO6/TiO2-NT nanocomposites is exhibited in Figure 1. Ten layers of ultrathin titania film were

Nanoarchitectonics of the cathode to improve the reversibility of Li–O₂ batteries

• Hien Thi Thu Pham,
• Jonghyeok Yun,
• So Yeun Kim,
• Sang A Han,
• Jung Ho Kim,
• Jong-Won Lee and
• Min-Sik Park

Beilstein J. Nanotechnol. 2022, 13, 689–698, doi:10.3762/bjnano.13.61

• determined by a porosity analyzer (Micromeritics, Tristar II 3020). The electrical conductivity measurements were conducted by the four-point probe method using a power resistivity measurement system (MCP-PD51) at different applied pressures ranging from 5 to 20 kN. The thermal stability was examined by TGA

Tunable superconducting neurons for networks based on radial basis functions

• Andrey E. Schegolev,
• Nikolay V. Klenov,
• Sergey V. Bakurskiy,
• Igor I. Soloviev,
• Mikhail Yu. Kupriyanov,
• Maxim V. Tereshonok and
• Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2022, 13, 444–454, doi:10.3762/bjnano.13.37

• number, T is the temperature, kB is Boltzmann’s constant, where H is the exchange energy (H = 0 in S and N layers). The indexes “l” and “r” denote the materials at, respectively, the left and right side of an interface, ξ is the coherence length, ρ is the resistivity of the material (in the following, ξ

• [61][62]: where ρS is the resistivity of the superconducting material, μ0 is the vacuum permeability and ℏ is Planck’s constant. For instance, for a homogeneous niobium film, the estimate for the constant λ0 is around 100 nm, while experimentally measured values of the screening length λ at T = 4.2 K

• , and the structure thickness is much smaller than the screening length. We propose a hybrid structure (see Figure 5) consisting of three parts, namely a pairing source, a spin valve, and a current-carrying layer of normal metal with low-resistivity. The general principle of operation is the following

A chemiresistive sensor array based on polyaniline nanocomposites and machine learning classification

• Jiri Kroutil,
• Alexandr Laposa,
• Ali Ahmad,
• Jan Voves,
• Vojtech Povolny,
• Ladislav Klimsa,
• Marina Davydova and
• Miroslav Husak

Beilstein J. Nanotechnol. 2022, 13, 411–423, doi:10.3762/bjnano.13.34

• coefficient. The resistivity of these nanocomposites depends on the p–n depletion layer width on the interface between the n-type nanoparticles and the surrounding p-type PANi molecules. Gas sensing analysis The gas sensing characterizations of sensitive layers were performed using a custom-built apparatus

• deformation of the polyaniline conjugation chains. The summary of the gas sensor responses for all active layers is shown in Figure 9. All layers show an increasing resistivity as a clear response to CO, CO2, NH3, and NO2. Additionally, to exclude the influence of humidity on the sensor signal, the sensor

• concentration due to PANI doping and the formation of charge transfer complexes [20]. The decrease of electrical resistance is caused by the greater mobility of the dopant ions, related to the development of PANI chains. Furthermore, the swelling effect contributes to the change in resistivity [21]. Statistical

Selected properties of Al_xZn_yO thin films prepared by reactive pulsed magnetron sputtering using a two-element Zn/Al target

• Witold Posadowski,
• Artur Wiatrowski,
• Jarosław Domaradzki and
• Michał Mazur

Beilstein J. Nanotechnol. 2022, 13, 344–354, doi:10.3762/bjnano.13.29

• a function of the distance from the target axis on both sides (front and back) of the substrate. The lowest measured resistivity was about 4 × 10−3 Ω·cm. Additionally, optical properties, surface topography, and elemental composition were determined in selected areas of the substrate. Keywords

• manufacturing transparent electrodes, the TCO films should have relatively low resistivity, ρTCO ≤ 10−3 Ω·cm, and optical transmittance, preferably over 80%, for films with thicknesses not exceeding 200 nm. In addition, parameters such as high resistance to mechanical exposure and good adhesion to the substrate

• of aluminum oxide in such targets is approximately 2% [6][7][8][9][10][11][12][13][14][15][16][17][18]. However, in research in which the objective was to obtain films with minimum resistivity, the alumina content was typically varied in the range of 1–6% [8][9][12]. AZO films have also been obtained

Controllable two- and three-state magnetization switching in single-layer epitaxial Pd_1−xFe_x films and an epitaxial Pd_0.92Fe_0.08/Ag/Pd_0.96Fe_0.04 heterostructure

• Igor V. Yanilkin,
• Amir I. Gumarov,
• Gulnaz F. Gizzatullina,
• Roman V. Yusupov and
• Lenar R. Tagirov

Beilstein J. Nanotechnol. 2022, 13, 334–343, doi:10.3762/bjnano.13.28

• resistivity returns to a common value of approx. 15.8 μΩ·cm, corresponding to the magnetic moment along the easy axes (see more details below). The resistivities hierarchy for the magnetic moment oriented along the X-, Y-, and Z-axes, ρx > ρy > ρz, is typical for ferromagnetic films of comparable thickness

• lying in the plane of the film and close to [110] (⟨110⟩) (approx. 38° relative to [100], see Figure 3b). In the following, we denote the measured resistivity by ρxy, ρxz, and ρyz, with the magnetic field applied in the XY-, XZ-, and YZ-planes, respectively. The angles are defined in the top insets in

• heterostructure can switch between P, OG, and AP steady magnetic configurations in the film plane by rotating the magnetic moment of the soft magnetic layer with respect to the magnetically harder layer. Dependence of the resistivity on the magnetic field at its different orientations, T = 5 K. The field is

Investigation of a memory effect in a Au/(Ti–Cu)Ox-gradient thin film/TiAlV structure

• Damian Wojcieszak,
• Jarosław Domaradzki,
• Michał Mazur,
• Tomasz Kotwica and
• Danuta Kaczmarek

Beilstein J. Nanotechnol. 2022, 13, 265–273, doi:10.3762/bjnano.13.21

• used. All electrical measurements were made at controlled room temperature (23 °C) and humidity (30% RH) in ambient air. Results Electrical properties The resistivity of the thin film was determined to be 1 × 103 Ω·cm. The type of electrical conductivity was determined on the basis of the sign of the

Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy

• Hiroya Tanaka,
• Shinya Ohno,
• Kazushi Miki and
• Masatoshi Tanaka

Beilstein J. Nanotechnol. 2022, 13, 172–181, doi:10.3762/bjnano.13.12

• oxidation on Si(113) using our VT-STM. Experimental The Si(113) sample used was a p-type (B-doped) wafer with a resistivity of 1–10 Ω·cm. Sacrificed oxidation was performed to produce the oxide with a thickness of 200 nm using an oxidation furnace. The sample was cut to 6.5 × 1.5 mm2, rinsed with acetone to

Sputtering onto liquids: a critical review

• Anastasiya Sergievskaya,
• Adrien Chauvin and
• Stephanos Konstantinidis

Beilstein J. Nanotechnol. 2022, 13, 10–53, doi:10.3762/bjnano.13.2

Chemical vapor deposition of germanium-rich CrGe_x nanowires

• Vladislav Dřínek,
• Stanislav Tiagulskyi,
• Roman Yatskiv,
• Jan Grym,
• Radek Fajgar,
• Věra Jandová,
• Martin Koštejn and
• Jaroslav Kupčík

Beilstein J. Nanotechnol. 2021, 12, 1365–1371, doi:10.3762/bjnano.12.100

• . Keywords: chemical vapor deposition; chromium germanide; nanostructured materials; nanowire; resistivity; Introduction Metal silicides and germanides belong to an extensively studied group of materials offering a wide variety of properties to meet various requirements in battery, optical, and electronic

• effort to prepare a Cr/Ge deposit in a nanostructured form. Using chemical vapor deposition (CVD), we succeeded to synthesize deposits containing CrGex NWs. Their structure was elucidated and measurements of individual NWs were carried out to determine their electrical resistivity. Results and Discussion

• carbon–platinum composite using focused electron beam-induced deposition (FEBID) (Supporting Information File 1, Figure S10). The resistivity of the nanowire–deposit system was estimated to be 2.7 kΩ·cm (Figure 5). This value is significantly higher than the previously reported resistivity for nominally

In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures

• Olena M. Kapran,
• Roman Morari,
• Taras Golod,
• Evgenii A. Borodianskyi,
• Vladimir Boian,
• Andrei Prepelita,
• Nikolay Klenov,
• Anatoli S. Sidorenko and
• Vladimir M. Krasnov

Beilstein J. Nanotechnol. 2021, 12, 913–923, doi:10.3762/bjnano.12.68

• thinner S′ (6 nm) is smaller than that of the S1 ML with S′ (8 nm). Figure 1e shows Rxx(T) curves for a horizontal bridge at the S1 sample at four sequentially increasing magnetic field strengths (hard axis orientation) and Iac = 1 mA. It is seen that the onset of resistivity at T ≈ 7.3 K is affected by

• -linear flux-flow Hall effect Resistivity in type-II superconductors with sizes larger than the London penetration depth, λ, is caused by motion of Abrikosov vortices, that is, it has a flux-flow (FF) nature [50][51][52][53]. Since our micrometer-size bridges are significantly larger than λ ≈ 100 nm of Nb

• resistivity in our bridges, the observed unusual maximum in MR is likely caused by triggering of the FF phenomenon by domain stray fields, which change upon remagnetization of F-layers. The remarkable temperature variation of MR in Figure 2a–c is then primarily caused by the temperature variation of the