Synthesis and characterization of RF-sputtered ZnTe/Cu_2−xTe thin films for solar cell applications

• Gerardo Arreola Jardón,
• Susana Meraz Dávila,
• Claudia Elena Pérez García,
• Aime Margarita Gutiérrez Peralta and
• Sergio Joaquín Jiménez Sandoval

Beilstein J. Nanotechnol. 2026, 17, 1016–1027, doi:10.3762/bjnano.17.69

• transmittance with increasing Cu concentration, attributed to the metallic-like absorption of Cu2−xTe phases. Electrical characterization revealed a transition from semiconducting to highly conductive behavior with resistivity decreasing from approximately 102 to 10−2 Ω·cm for films grown at 300 °C and from 101

• challenges for large-scale application [4]. One of the most persistent limitations in CdTe solar cells is the formation of a stable back contact with low resistance. The high work function of CdTe (≈5.7 eV) and its relatively high surface resistivity hinder the formation of an ideal ohmic contact with

• developed, demonstrating that controlled incorporation of Cu and O through RF sputtering enables modification of the base semiconductor properties while reducing uncontrolled Cu migration [17][18][19][20][21][22]. These studies showed that composite growth strategies can significantly decrease resistivity

Materials challenges in solid-state sensors for continuous monitoring of ions in water

• Maryam Darestani-Farahani and
• Peter Kruse

Beilstein J. Nanotechnol. 2026, 17, 935–973, doi:10.3762/bjnano.17.66

He⁺ FIBID-fabricated 3D AFM tip architectures: an exploratory study of hollow pillars, helices, and spirals

• Alba Arroyo-Fructuoso,
• Ana Galet,
• Gregor Hlawacek and
• Rosa Córdoba

Beilstein J. Nanotechnol. 2026, 17, 863–871, doi:10.3762/bjnano.17.62

• . In contrast, the platinum–carbon deposits produced via FEBID exhibit a high carbon content and contain embedded platinum grains measuring approximately 3–5 nm in diameter [24]. This high carbon content results in elevated electrical resistivity [15], yet such deposits have demonstrated utility in

Glycerol photoelectrochemical oxidation reaction at carbon nitrides/BiVO₄ materials

• Charles Garcia da Cunha,
• Isabelle M. D. Gonzaga,
• Cristian Hessel,
• Izadora F. Reis,
• Ivo F. Teixeira,
• Lucia H. Mascaro and
• Elton Sitta

Beilstein J. Nanotechnol. 2026, 17, 806–817, doi:10.3762/bjnano.17.57

• (ethylene glycol) (PEG-300, Sigma-Aldrich, ACS reagent, 99.99%) for 30 min in an ultrasound bath (Soni-tech ultrasonic cleaner). Subsequently, 60 µL of a freshly sonicated suspension was drop-cast onto a 1 × 1 cm FTO (Sigma-Aldrich, surface resistivity ≈7 Ω/sq) substrate cleaned/pre-treated according to the

Oxidative atmosphere-driven formation of single-phase spinel CuRh₂O₄ nanofibers for alkaline water oxidation

• Namhee Kim,
• Sumin Ko,
• Sohyeon Choi,
• Seoyoon Jang,
• Myung Hwa Kim and
• Dasol Jin

Beilstein J. Nanotechnol. 2026, 17, 737–743, doi:10.3762/bjnano.17.50

• obtained from Daejung Chemicals (Korea). Commercial Ir/C catalyst (20 wt % metal loading on Vulcan XC-72) was purchased from Premetek Co. (USA). All aqueous solutions were prepared using deionized water (resistivity ≥ 18 MΩ·cm). Synthesis The electrospinning solution was prepared by dissolving Rh and Cu

Interconnection morphology effects on the radio frequency response of carbon nanotube sponges

• Manuela Scarselli,
• Javad Rezvani,
• Zeno Zuccari,
• Mattia Scagliotti and
• Simone Tocci

Beilstein J. Nanotechnol. 2026, 17, 343–351, doi:10.3762/bjnano.17.23

• resistivity, especially metals, which, when applied in antennas, guarantee good radiation of electromagnetic (EM) waves into free space. Applications of wireless technology are constantly expanding regarding short-range connections, like wireless local area networks and Bluetooth, and wide-area coverage, like

Fast vortex dynamics and relaxation times in NbRe-based heterostructures

• Francesco De Chiara,
• Zahra Makhdoumi Kakhaki,
• Francesco Avitabile,
• Francesco Colangelo,
• Abhishek Kumar,
• Carmine Attanasio and
• Carla Cirillo

Beilstein J. Nanotechnol. 2026, 17, 292–302, doi:10.3762/bjnano.17.20

• proximity to a ferromagnetic layer leads to a stronger suppression of superconductivity than in S/N bilayers. From R10K, the low-temperature resistivities of the two strips have been calculated, yielding = 52 μΩ·cm and = 124 μΩ·cm. The significant difference in resistivity observed between the two

• are characterized by significantly different electrical resistivities, with Au being an excellent electrical conductor even at small thicknesses and Py films showing high resistivity in the ultrathin film regime [40][41]. To calculate the London penetration depth at T = 0 K, the formula λ(0) = 1.05

• , ρ10K is the resistivity in the normal state at T = 10 K, λ(0) and ξ(0) are, respectively, the London penetration length and the coherence length at zero temperature, and D is the quasiparticles diffusion coefficient. Acknowledgements The authors thank L. Parlato and M. Peluso for performing the

Electron transport through nanoscale multilayer graphene and hexagonal boron nitride junctions

• Aleksandar Staykov and
• Takaya Fujisaki

Beilstein J. Nanotechnol. 2025, 16, 2132–2143, doi:10.3762/bjnano.16.147

• composed of polar bonds with N acting as electron donor and B acting as electron acceptor. Unlike graphene and graphite, h-BN shows high resistivity and is a large-bandgap semiconductor [17]. h-BN has a wide range of applications due to its unique properties [18]. It is used as a substrate material for

Evaluating metal-organic precursors for focused ion beam-induced deposition through solid-layer decomposition analysis

• Benedykt R. Jany,
• Katarzyna Madajska,
• Aleksandra Butrymowicz-Kubiak,
• Franciszek Krok and
• Iwona B. Szymańska

Beilstein J. Nanotechnol. 2025, 16, 1942–1951, doi:10.3762/bjnano.16.135

• , leading to faster deposition growth (around 100 times). Second, FIBID deposits have higher metal content and lower resistivity compared to FEBID. However, there are some disadvantages to FIBID, such as the larger size of noble gas and metal ions that penetrate to smaller depths in solids and result in

Electrical, photocatalytic, and sensory properties of graphene oxide and polyimide implanted with low- and medium-energy silver ions

• Josef Novák,
• Eva Štěpanovská,
• Petr Malinský,
• Vlastimil Mazánek,
• Jan Luxa,
• Ulrich Kentsch and
• Zdeněk Sofer

Beilstein J. Nanotechnol. 2025, 16, 1794–1811, doi:10.3762/bjnano.16.123

• atomic force microscopy. Electrical properties as a function of air humidity were evaluated using a two-point method, and photocatalytic activity was tested by monitoring the UV-induced decomposition of rhodamine B. The results demonstrate that ion implantation significantly reduces surface resistivity

• surface electrical resistivity [8]. During implantation, the kinetic energy of the implanted particles is transferred to the matrix, causing local crystallization and carbonization of the polymer structures. This process is associated with the destruction of the original covalent bonds (e.g., C–N, C=O

• interconnected carbon network. Such changes have significant implications for the material’s properties, particularly its electrical conductivity, as a denser carbon structure typically lowers resistivity and enhances conductive pathway. Structure analysis by Raman and FTIR spectroscopies Comprehensive

Influence of laser beam profile on morphology and optical properties of silicon nanoparticles formed by laser ablation in liquid

• Natalie Tarasenka,
• Vladislav Kornev,
• Alena Nevar and
• Nikolai Tarasenko

Beilstein J. Nanotechnol. 2025, 16, 1533–1544, doi:10.3762/bjnano.16.108

• , repetition rate, and liquid composition. The parameters of the ablated target, such as its optical characteristics and conductivity/resistivity, might also have a pronounced impact on size and morphology of the produced NPs. As demonstrated in [12], femtosecond laser ablation of silicon with varying

• Bessel, annular, and Gaussian beams. As a target, a silicon plate (boron-doped Si wafer with resistivity 12 Ω·cm) was used, which was fixed in a holder and placed at the bottom of a 15 mL glass beaker (Figure 1) under an ethanol layer in a way that a 3 mm distance was kept between the surface of the

Wavelength-dependent correlation of LIPSS periodicity and laser penetration depth in stainless steel

• Nitin Chaudhary,
• Chavan Akash Naik,
• Shilpa Mangalassery,
• Jai Prakash Gautam and
• Sri Ram Gopal Naraharisetty

Beilstein J. Nanotechnol. 2025, 16, 1302–1315, doi:10.3762/bjnano.16.95

• on the laser intensity. In the linear regime, pure metals such as copper, aluminum, and silver, which have low electrical resistivity, exhibit a low penetration depth for EM waves. In contrast, composite alloys such as stainless steel have higher resistivity and show a higher penetration depth than

Focused ion beam-induced platinum deposition with a low-temperature cesium ion source

• Thomas Henning Loeber,
• Bert Laegel,
• Meltem Sezen,
• Feray Bakan Misirlioglu,
• Edgar J. D. Vredenbregt and
• Yang Li

Beilstein J. Nanotechnol. 2025, 16, 910–920, doi:10.3762/bjnano.16.69

• currents. Deposition rate, material composition, and electrical resistivity were examined and compared with layers deposited at comparable settings with a standard gallium (Ga) FIB. The deposition rate is found to depend linearly on the current density. The rate is comparable for Cs+ and Ga+ under similar

• conditions, but the deposit has lower Pt content for Cs+. The electrical resistivity of the deposit is found to be higher for Cs+ than for Ga+ and decreasing with increasing acceleration voltage. Keywords: cesium ion source; cold atom ion source; focused ion beam (FIB); FIB-induced deposition (FIBID

• Cs+ FIB in comparison to results of layer deposition induced by Rb+ and Ga+. Pt was deposited at different acceleration voltages and ion beam currents to evaluate the deposition rate and the electrical resistivity of the layers. To measure the grain structure as well as the material composition using

High-temperature epitaxial growth of tantalum nitride thin films on MgO: structural evolution and potential for SQUID applications

• Michelle Cedillo Rosillo,
• Oscar Contreras López,
• Jesús Antonio Díaz,
• Agustín Conde Gallardo and
• Harvi A. Castillo Cuero

Beilstein J. Nanotechnol. 2025, 16, 690–699, doi:10.3762/bjnano.16.53

• 6.3 K, depending on the stoichiometry and deposition conditions. Resistance–temperature curves further confirm the high quality of the films, as evidenced by their low residual resistivity ratios. These findings demonstrate that PLD is a suitable technique for producing high-quality TaN

• diffraction database was used for the qualitative search–match phase identification. To determine the epitaxy of the films, TEM was carried out with a Jeol JEM 2100F. Finally, the resistivity, R, was measured as a function of the temperature T using the van der Pauw method in a DynaCool Quantum Design

Nanoscale capacitance spectroscopy based on multifrequency electrostatic force microscopy

• Pascal N. Rohrbeck,
• Lukas D. Cavar,
• Franjo Weber,
• Peter G. Reichel,
• Mara Niebling and
• Stefan A. L. Weber

Beilstein J. Nanotechnol. 2025, 16, 637–651, doi:10.3762/bjnano.16.49

• , which is 25·1021 Ω, taking into account the electrical resistivity of silicon dioxide of [92] and a thickness of the SiO2 layer of 300 nm on an area of 9 μm2. The observed discrepancy may be attributed to the increased conductivity of the microcapacitors, which is a result of the incorporation of Ga

• materials science, biology, and nanotechnology. Experimental Polymer blend samples We used F14H20 samples that we bought from SPM Labs LLC, Tempe, AZ, USA. Microcapacitors Si wafers “CZ” were bought from “Si-Mat” with a diameter of 150 mm, ⟨100⟩ surface orientation, a thickness of 675 ± 20 μm, a resistivity

N₂⁺-implantation-induced tailoring of structural, morphological, optical, and electrical characteristics of sputtered molybdenum thin films

• Usha Rani,
• Kafi Devi,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 495–509, doi:10.3762/bjnano.16.38

• resistivity of Mo thin films makes them desirable for integrated circuits, where they contribute to the efficient flow of electrical current [3]. Furthermore, their optical properties make them well suited for a use as a protective coating in energy storage and electronic devices [4][5]. Mo films deposited on

• ] investigated the effects of argon ion bombardment on the characteristics of Mo thin films. Films with reduced porosity and larger grains demonstrated increased reflectance and decreased resistivity, consistent with electron mean free path analysis results. Navin et al. [15] investigated self-organized pattern

• implanted Mo thin films as a function of thickness. I–V curves have been obtained within a voltage range of −5 to 5 V. A nearly linear relationship between applied voltage and the resulting current indicates ohmic behavior [51]. Resistance and resistivity of the Mo thin films have been calculated based on

Pulsed laser in liquid grafting of gold nanoparticle–carbon support composites

• Madeleine K. Wilsey,
• Teona Taseska,
• Qishen Lyu,
• Connor P. Cox and
• Astrid M. Müller

Beilstein J. Nanotechnol. 2025, 16, 349–361, doi:10.3762/bjnano.16.26

• resistivity of ≥17.5 MΩ·cm was obtained from a Thermo Scientific Barnstead Smart2Pure Pro UV/UF 15 LPH Water Purification System. The experiments were performed at room temperature and in ambient air. Glassware was cleaned with aqua regia, thoroughly rinsed with water, and dried before use. Data analysis and

Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature

• Kafi Devi,
• Usha Rani,
• Arun Kumar,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 333–348, doi:10.3762/bjnano.16.25

• carrier transport, ZnTe can be used as a buffer layer in CdTe-based solar cells for back contact. Moreover, n-type zinc telluride films can be used in the window layer as a substitute for CdS [6]. Zinc telluride films are highly resistive with a resistivity of about several megaohm·centimetres [7]. The

• resistivity of the films depends on the structure, grain boundary defects, and surface morphology of the films. These properties can be altered by varying the deposition method as well as the deposition parameters. In literature, there are several reports of zinc telluride films deposited using various

• . Rakhshani et al. [16] reported the impact of substrate temperature (35 and 305 °C), thermal annealing, and nitrogen doping on optoelectronic properties of ZnTe films and established an optimal doping concentration of nitrogen for lowering the resistivity of the grown films. Further, there are reports [17

Advanced atomic force microscopy techniques V

• Philipp Rahe,
• Ilko Bald,
• Nadine Hauptmann,
• Regina Hoffmann-Vogel,
• Harry Mönig and
• Michael Reichling

Beilstein J. Nanotechnol. 2025, 16, 54–56, doi:10.3762/bjnano.16.6

• 10.3762/bjnano.16.6 Keywords: AFM; atomic force microscopy; conductivity; drift correction; force spectroscopy; NC-AFM; non-contact atomic force microscopy; resistivity; tip–surface interaction; With the restrictions on travelling and social distancing lifted, we were delighted to continue two series of

• accurate knowledge of the quartz cantilever stiffness, the authors develop a method to quantify the stiffness based on thermal noise measurements and numerical simulation. Calibrated measurements of conductivity and resistivity are the focus of the contribution by Piquemal et al. [3]. A particular

Fabrication of hafnium-based nanoparticles and nanostructures using picosecond laser ablation

• Abhishek Das,
• Mangababu Akkanaboina,
• Jagannath Rathod,
• R. Sai Prasad Goud,
• Kanaka Ravi Kumar,
• Raghu C. Reddy,
• Ratheesh Ravendran,
• Katia Vutova,
• S. V. S. Nageswara Rao and
• Venugopal Rao Soma

Beilstein J. Nanotechnol. 2024, 15, 1639–1653, doi:10.3762/bjnano.15.129

• -dispersive X-ray spectroscopy (EDX, Figure 1b). Distilled water with a resistivity of more than 18 MΩ·cm was obtained from a Millipore system. Toluene and anisole (spectroscopic grade) were obtained from Sigma-Aldrich and used as received. Synthesis of nanoparticles and nanostructures A linearly polarised

Investigation of Hf/Ti bilayers for the development of transition-edge sensor microcalorimeters

• Victoria Y. Safonova,
• Anna V. Gordeeva,
• Anton V. Blagodatkin,
• Dmitry A. Pimanov,
• Anton A. Yablokov and
• Andrey L. Pankratov

Beilstein J. Nanotechnol. 2024, 15, 1353–1361, doi:10.3762/bjnano.15.108

• , shown in Figure 1a, are connected by 140 μm-wide electrodes, which increase the effective bridge length. This has to be thought about when calculating the resistivity. Thus, 280 μm was added to the length of all square bridges except sample A1 (electrodes are already integrated into this sample). The

• resistivity estimated considering the width of the electrodes ranged from 0.7 × 10−7 to 1.1 × 10−7 Ω·m for the four structures A1–A4 from Figure 1a. Bearing in mind that the residual resistance ratio of the studied samples is in the range from 1.9 to 2.5, the room temperature resistivity is close to the value

• of the bulk resistivity at room temperature of 3.3 × 10−7 Ω·m [11]. The variation of calculated resistivity between bridges of different sizes is likely not due to physically different film properties, but rather due to rough estimations not taking into account the edge effects for the current flow

New design of operational MEMS bridges for measurements of properties of FEBID-based nanostructures

• Bartosz Pruchnik,
• Krzysztof Kwoka,
• Ewelina Gacka,
• Dominik Badura,
• Piotr Kunicki,
• Andrzej Sierakowski,
• Paweł Janus,
• Tomasz Piasecki and
• Teodor Gotszalk

Beilstein J. Nanotechnol. 2024, 15, 1273–1282, doi:10.3762/bjnano.15.103

• apex by choosing appropriate dwell time and pitch for the deposition. The dimensions of the nanowire were 60 nm in diameter and 1.6 μm in length. The junction was tested by resistance measurements (Figure 8b). The measured resistance was 12 MΩ, giving a resistivity of approximately 2.1 Ω·cm, which is

• consistent with the reported resistivity of the FEBID material [24]. The resistivity was also measured across the milled structure before nanowire deposition (Figure 8a) and after FIB removal (Figure 8b). The results obtained show that in both cases the measured current was mostly related to the charging and

• shown that the leakage was not affected by gallium FIB milling or conductive FEBID deposition in the vicinity of the RoI. This is particularly important in the field of high-resistivity materials (e.g., FEBID) where the elimination of parasitic interactions is critical to the measurement. More

The role of a tantalum interlayer in enhancing the properties of Fe₃O₄ thin films

• Hai Dang Ngo,
• Vo Doan Thanh Truong,
• Van Qui Le,
• Hoai Phuong Pham and
• Thi Kim Hang Pham

Beilstein J. Nanotechnol. 2024, 15, 1253–1259, doi:10.3762/bjnano.15.101

• NTT Hi-Tech Institute, Nguyen Tat Thanh University, 298-300A Nguyen Tat Thanh Street, Ward 13, District 4, Ho Chi Minh City 700000, Vietnam 10.3762/bjnano.15.101 Abstract High spin polarization and low resistivity of Fe3O4 at room temperature have been an appealing topic in spintronics with various

Dual-functionalized architecture enables stable and tumor cell-specific SiO₂NPs in complex biological fluids

• Iris Renata Sousa Ribeiro,
• Raquel Frenedoso da Silva,
• Romênia Ramos Domingues,
• Adriana Franco Paes Leme and
• Mateus Borba Cardoso

Beilstein J. Nanotechnol. 2024, 15, 1238–1252, doi:10.3762/bjnano.15.100

• , resistivity of 18.2 MΩ·cm–1). Synthesis of rhodamine-labeled SiO2NPs (SiO2NPs) The synthesis of rhodamine-labeled SiO2NPs was similar to the protocol proposed by the group [27]. The dye precursor was synthesized by conjugation of the isothiocyanate group of rhodamine B isothiocyanate to APTES at a molar ratio

Photocatalytic methane oxidation over a TiO₂/SiNWs p–n junction catalyst at room temperature

• Qui Thanh Hoai Ta,
• Luan Minh Nguyen,
• Ngoc Hoi Nguyen,
• Phan Khanh Thinh Nguyen and
• Dai Hai Nguyen

Beilstein J. Nanotechnol. 2024, 15, 1132–1141, doi:10.3762/bjnano.15.92

• . Experimental Chemicals and materials Commercial p-type Si 3-inch wafers (⟨100⟩ orientation, boron-doped, resistivity = 0.01–1 Ω·cm) were purchased from Silicon Mitus Corporation, South Korea. Silver nitrate (AgNO3, 0.1 M), hydrofluoric acid HF (50 wt %), nitric acid (HNO3, 63%), acetone, and ethanol were