High sensitivity and high resolution element 3D analysis by a combined SIMS–SPM instrument

• Yves Fleming and
• Tom Wirtz

Beilstein J. Nanotechnol. 2015, 6, 1091–1099, doi:10.3762/bjnano.6.110

• of the TiCN cermet. Keywords: alloy; atomic force microscopy (AFM); correlative microscopy; differential sputtering; in situ; multimodal imaging; nano-cluster; polymer blend; secondary ion mass spectrometry (SIMS); scanning probe microscopy (SPM); SIMS artefacts; sputter-induced effects; sputter

• has increased during the last decade [1]. In particular, nano-analytical techniques and instruments providing both excellent spatial resolution and high-sensitivity chemical information are of utmost importance for investigations at the nanoscale. Secondary ion mass spectrometry (SIMS) is a method of

• . Conclusion A correlative approach between secondary ion mass spectrometry and atomic force microscopy in a single instrument leads to 3D chemical maps with highest sensitivity and enhanced spatial accuracy. This combination of techniques is of particular interest to detect and eliminate artefacts due to

Site-selective growth of surface-anchored metal-organic frameworks on self-assembled monolayer patterns prepared by AFM nanografting

• Tatjana Ladnorg,
• Alexander Welle,
• Stefan Heißler,
• Christof Wöll and
• Hartmut Gliemann

Beilstein J. Nanotechnol. 2013, 4, 638–648, doi:10.3762/bjnano.4.71

• growth of the SURMOF is observed. In the latter case the roughness of the HKUST-1 is found to be significantly higher than for the 1-mercaptopropionic acid. The successful grafting process was verified by time-of-flight secondary ion mass spectrometry and atomic force microscopy. The SURMOF structures

• . In addition to the AFM investigations, which provided information about topography and material contrast of the grafted sample, a chemical characterization was carried out by time-of-flight secondary ion mass spectrometry (ToF-SIMS). For that purpose a sample with grafted rectangular structures of 10

• pixel FPA detector sensitive to a range of 900–3800 cm−1 was used. 4096 spectra were aquired in one measurement over a field of view of 32 × 32 µm, 4 × 64 scans were collected over an area of 64 × 64 µm with a spectral resolution of 4 cm−1. ToF-SIMS Time-of-flight secondary ion mass spectrometry was

Diamond nanophotonics

• Katja Beha,
• Helmut Fedder,
• Marco Wolfer,
• Merle C. Becker,
• Petr Siyushev,
• Mohammad Jamali,
• Anton Batalov,
• Christopher Hinz,
• Jakob Hees,
• Lutz Kirste,
• Harald Obloh,
• Etienne Gheeraert,
• Boris Naydenov,
• Ingmar Jakobi,
• Florian Dolde,
• Sébastien Pezzagna,
• Daniel Twittchen,
• Matthew Markham,
• Daniel Dregely,
• Harald Giessen,
• Jan Meijer,
• Fedor Jelezko,
• Christoph E. Nebel,
• Rudolf Bratschitsch,
• Alfred Leitenstorfer and
• Jörg Wrachtrup

Beilstein J. Nanotechnol. 2012, 3, 895–908, doi:10.3762/bjnano.3.100

• decrease of the nickel signal after lowering the argon flux at both 40 min and 50 min indicates the absence of unwanted hysteresis effects. 5.3 Verification of nickel incorporation The incorporation of nickel into the as-grown diamond layers was verified by secondary ion mass spectrometry (SIMS). An