Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar⁺ ion beam: a comparative study

• Indra Sulania,
• Harpreet Sondhi,
• Tanuj Kumar,
• Sunil Ojha,
• G R Umapathy,
• Ambuj Mishra,
• Ambuj Tripathi,
• Richa Krishna,
• Devesh Kumar Avasthi and
• Yogendra Kumar Mishra

Beilstein J. Nanotechnol. 2024, 15, 367–375, doi:10.3762/bjnano.15.33

• understood. Despite controlled fabrication of patterns has been achieved, details that influence the process of self-assembly still remain open. Ion beam sputtering is an important method for inducing topographical changes in specific materials. For silicon, self-organized dots, ripples, and cones have been

• or range of damage profiles. Single-crystal materials (e.g. silicon and germanium) are composed of ordered arrays of atoms. If an ion beam is aligned to the atomic planes, most of the ions pass through the interplanar space and penetrate deep into the crystal. This can be used in channelling studies

Modulated critical currents of spin-transfer torque-induced resistance changes in NiCu/Cu multilayered nanowires

• Mengqi Fu,
• Roman Hartmann,
• Julian Braun,
• Sergej Andreev,
• Torsten Pietsch and
• Elke Scheer

Beilstein J. Nanotechnol. 2024, 15, 360–366, doi:10.3762/bjnano.15.32

• Discussion The AAO template was fabricated by directly anodizing a ca. 1 µm thick aluminum (Al) film on a silicon (Si) substrate covered with 200 nm SiO2 and patterned Ti/Au (5/50 nm) bottom electrodes. It has pores with a diameter of around 35 nm, an interpore distance of around 50 nm, and a height of

Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS₂ thin films with domains much smaller than the laser spot size

• Felipe Wasem Klein,
• Jean-Roch Huntzinger,
• Vincent Astié,
• Damien Voiry,
• Romain Parret,
• Houssine Makhlouf,
• Sandrine Juillaguet,
• Jean-Manuel Decams,
• Sylvie Contreras,
• Périne Landois,
• Ahmed-Azmi Zahab,
• Jean-Louis Sauvajol and
• Matthieu Paillet

Beilstein J. Nanotechnol. 2024, 15, 279–296, doi:10.3762/bjnano.15.26

• ) on the precise evaluation of the integrated intensities of the phonon modes of MoS2, namely A(A1g) and A(E12g), with respect to the integrated intensity of the 521 cm−1 mode from a bare area of the oxidized silicon substrate, A0(Si), used as an intensity reference [31], or from the silicon substrate

• -Stokes intensity ratio of A1g phonon modes (similar results are obtained using E12g) and that of silicon from the Stokes/anti-Stokes intensity ratio of the 521 cm−1 Si mode (see [42] for method details). While the silicon temperature is quasi-insensitive to Pλ, the temperature of MoS2 flakes changes

• ratio, it is of great practical advantage to use the same silicon (the silicon below the oxide, which is Si(100) in the present work) in the measurement of A2D(Si) and A0(Si). A necessary precaution is that the Si(100) substrate orientation has to be kept the same for both measurements. Another

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• nitride (Nb-Ti-N) [20][25], or granular aluminum (grAl) [26][27], wolfram (W) [28], and silicon doped with boron (Si:B) [29]. Results and Discussion Figure 1 gives an overview of our fabricated sensor, showing the main components. The cantilever is a 600 nm thick Si-N triangular plate released from a much

• thicker silicon (Si) support, as shown in Figure 1a and Figure 1g. Figure 1a shows the microwave resonant circuit with its interdigital capacitor in series with the nanowire inductor. The meandering nanowire is placed at the base of the cantilever as shown in Figure 1c, in the area of largest strain

• of roughly 6 μm/min. This results in all the samples on the wafer being supported by a thin layer of silicon close to the top side. (h) Release and cantilever under-etch. A simple and fast method of release uses an isotropic dry-etch that completes the chip’s release from the wafer and removes the

Quantitative wear evaluation of tips based on sharp structures

• Ke Xu and
• Houwen Leng

Beilstein J. Nanotechnol. 2024, 15, 230–241, doi:10.3762/bjnano.15.22

• analyze the shape of the tip, we use a probe to scan a TipCheck calibration sample and characterize its morphology. The TipCheck sample, provided by BudgetSensors, consists of a silicon chip sample with a wear-resistant thin film coating. The thin film coating exhibits granular and sharp nanostructures

Ion beam processing of DNA origami nanostructures

• Leo Sala,
• Agnes Zerolová,
• Violaine Vizcaino,
• Alain Mery,
• Alicja Domaracka,
• Hermann Rothard,
• Philippe Boduch,
• Dominik Pinkas and
• Jaroslav Kocišek

Beilstein J. Nanotechnol. 2024, 15, 207–214, doi:10.3762/bjnano.15.20

• . Preparation of dry samples and AFM imaging Silicon wafers were cut into ∼7 × 7 mm2 chips and were then plasma-cleaned in air using a Roplass RPS40+ plasma cleaner, which generates a thin layer of plasma by diffuse coplanar surface barrier discharge [35]. The Si surface is exposed to the thin plasma layer for

CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics

• Gabriela Lewińska,
• Piotr Jeleń,
• Zofia Kucia,
• Maciej Sitarz,
• Łukasz Walczak,
• Bartłomiej Szafraniak,
• Jerzy Sanetra and
• Konstanty W. Marszalek

Beilstein J. Nanotechnol. 2024, 15, 144–156, doi:10.3762/bjnano.15.14

• are used in opto- and nanoelectronics. QDs establish a class of materials transitional between subatomic and mass types of matter. The classification of QDs according to the core material is divided into cadmium [7][8], silver [9][10], indium [9], carbon [11][12], and silicon [13][14]. Numerous

• carried out for three incidence angles (65°, 70°, and 75°). A Bruker atomic force microscope (AFM) MULTIMODE 8 was used in the measurements in the ScanAsyst in Air mode, using silicon nitride probes (with a nominal tip radius of 2 nm and a spring constant equal to 0.4 N/m). The substrate was

• monocrystalline silicon. A WITec Alpha 300 M+ spectrometer with a 488 nm laser, 600 groove grating, and a 100× ZEISS objective was used for Raman measurements. The samples were deposited on a glass substrate. Ultraviolet photoelectron spectroscopy (UPS) was conducted in an ultrahigh-vacuum chamber with a base

Influence of conductive carbon and MnCo₂O₄ on morphological and electrical properties of hydrogels for electrochemical energy conversion

• Sylwia Pawłowska,
• Karolina Cysewska,
• Yasamin Ziai,
• Jakub Karczewski,
• Piotr Jasiński and
• Sebastian Molin

Beilstein J. Nanotechnol. 2024, 15, 57–70, doi:10.3762/bjnano.15.6

• an accelerating voltage of 10 kV. Before imaging, the hydrogel samples were freeze-dried and coated with a 10 nm gold layer. The chemical composition of the hydrogel was analysed with a Thermo Fisher Scientific silicon drift detector energy-dispersive X-ray spectroscope. For characterisation of the

Measurements of dichroic bow-tie antenna arrays with integrated cold-electron bolometers using YBCO oscillators

• Leonid S. Revin,
• Dmitry A. Pimanov,
• Alexander V. Chiginev,
• Anton V. Blagodatkin,
• Viktor O. Zbrozhek,
• Andrey V. Samartsev,
• Anastasia N. Orlova,
• Dmitry V. Masterov,
• Alexey E. Parafin,
• Victoria Yu. Safonova,
• Anna V. Gordeeva,
• Andrey L. Pankratov,
• Leonid S. Kuzmin,
• Anatolie S. Sidorenko,
• Silvia Masi and
• Paolo de Bernardis

Beilstein J. Nanotechnol. 2024, 15, 26–36, doi:10.3762/bjnano.15.3

• We consider properties of dichroic antenna arrays on a silicon substrate with integrated cold-electron bolometers to detect radiation at frequencies of 210 and 240 GHz. This frequency range is widely used in cosmic microwave background experiments in space, balloon, and ground-based missions such as

• TES bolometers. The low- and mid-frequency arrays consist of dual- and triple-frequency detectors combined with sinusoidal antennas and silicon lenses. The high-frequency array consists of single- and dual-frequency detectors with orthomodal transducers and silicon horns. This array is aimed at 195

• antennas for frequencies of 210 and 240 GHz with cold-electron bolometers, described in the present paper, is proposed to be suitable for such applications. Two arrays placed on a single silicon chip with 7 mm × 7 mm size can independently detect radiation at two frequencies. Here, in the design of

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

• Joshua Williams,
• Michael I. Faley,
• Joseph Vimal Vas,
• Peng-Han Lu and
• Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

• Abstract We have prepared ferromagnetic nanostructures intended for the investigation of high-frequency magnetization dynamics in permalloy (Py) nanodisks using Lorentz transmission electron microscopy (LTEM) and electron holography. Py nanodisks were fabricated on thin silicon nitride (SiN) membranes

• layer on the resist, creating fences on the edge of the structure and contaminating the silicon nitride membrane. A possible solution is replacing IBE with reactive ion etching (RIE). Using RIE, there would be less redeposition since the reaction between gas and etched metal will form a gaseous compound

Determination of the radii of coated and uncoated silicon AFM sharp tips using a height calibration standard grating and a nonlinear regression function

• Perawat Boonpuek and
• Jonathan R. Felts

Beilstein J. Nanotechnol. 2023, 14, 1200–1207, doi:10.3762/bjnano.14.99

• measured using a tip characterizer and tip qualification or standard calibration grating. In one of those studies, the tip geometry was determined by using a well-known sharp-edged silicon structure, which included height patterns with a certified pitch on a nanostructure plate [10]. Three types of AFM

• tips (silicon nitride, silicon, and high-aspect-ratio tips) were scanned over the calibration pattern. Simultaneously, the AFM measurement signal showed the tip path profile as the real geometry of a fabricated microstructure. The tip radius was obtained from the curvature radius of the curve profile

• silicon tip (HQ:CSC17/No Al, nominal radius < 8 nm for regular force contact AFM; Figure 1c), all supplied by MikroMasch. The full cone angle for all tips is 40° as given by MikroMasch [9]. The tip end is a hemisphere with specific radius. For the coated tips, the tip radius includes the coating material

Dual-heterodyne Kelvin probe force microscopy

• Benjamin Grévin,
• Fatima Husainy,
• Dmitry Aldakov and
• Cyril Aumaître

Beilstein J. Nanotechnol. 2023, 14, 1068–1084, doi:10.3762/bjnano.14.88

• ), driven by a Mimea scanning probe microscope (SPM) controller (SPECS-Nanonis). Topographic imaging is performed in FM mode (FM-AFM) in the attractive regime, with negative frequency shifts of a few Hz and vibration amplitudes of a few tens of nm. All experiments were performed with Pt/Ir coated silicon

Spatial mapping of photovoltage and light-induced displacement of on-chip coupled piezo/photodiodes by Kelvin probe force microscopy under modulated illumination

• Zeinab Eftekhari,
• Nasim Rezaei,
• Hidde Stokkel,
• Jian-Yao Zheng,
• Andrea Cerreta,
• Ilka Hermes,
• Minh Nguyen,
• Guus Rijnders and
• Rebecca Saive

Beilstein J. Nanotechnol. 2023, 14, 1059–1067, doi:10.3762/bjnano.14.87

• In this work, a silicon photodiode integrated with a piezoelectric membrane is studied by Kelvin probe force microscopy (KPFM) under modulated illumination. Time-dependent KPFM enables simultaneous quantification of the surface photovoltage generated by the photodiode as well as the resulting

• zirconate titanate (PZT), was integrated onto a silicon photodiode. The PZT layer was sandwiched between two lanthanum nickelate (LNO) electrodes and ultimately the backside of the silicon substate was etched to enhance the motion of the membrane. More detailed information on the fabrication and cross

• -sectional scanning electron microscopy images can be found in [32]. The top view of the piezo/photodiode device is given in Figure 1a, where the inset represents the cross section of the device stack. Owing to the integration of PZT with silicon processing and operation at low voltages, this device can be

Isolation of cubic Si₃P₄ in the form of nanocrystals

• Polina K. Nikiforova,
• Sergei S. Bubenov,
• Vadim B. Platonov,
• Andrey S. Kumskov,
• Nikolay N. Kononov,
• Tatyana A. Kuznetsova and
• Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2023, 14, 971–979, doi:10.3762/bjnano.14.80

• Centre «Crystallography and Photonics», Russian Academy of Sciences, 59 Leninskiy prospekt, Moscow, Russia Prokhorov General Physics Institute, Russian Academy of Sciences, 38 Vavilov Str., Moscow, Russia 10.3762/bjnano.14.80 Abstract This article describes an approach for synthesizing silicon phosphide

• nanoparticles with a defective zinc blende structure under mild conditions through thermal annealing of hydrogenated silicon nanoparticles with red phosphorus. The synthesized Si3P4 nanoparticles were analyzed using FTIR, XRD, electron diffraction, EDX, TEM, Raman spectroscopy, X-ray fluorescence spectrometry

• precursor for diffusion doping of wafers and as anode material for Li-ion batteries. A similar method with a hydrogenation step offers the possibility to obtain other compounds, such as silicon selenides, arsenides, and sulfides. Keywords: ampoule annealing; defective zinc blende structure; DFT

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

• Mathias Franz,
• Mahnaz Safian Jouzdani,
• Lysann Kaßner,
• Marcus Daniel,
• Frank Stahr and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

• crystal 200 mm silicon (100) wafers with a pre-coated thermal SiO2 film of 100 nm thickness. As precursor for all depositions dicobalt hexacarbonyl-1-heptyne [Co2(CO)6HC≡CC5H11] was used. The precursor was synthesised according to Georgi et al. [23] and filled to a common 200 mL stainless steel bubbler

Upscaling the urea method synthesis of CoAl layered double hydroxides

• Camilo Jaramillo-Hernández,
• Víctor Oestreicher,
• Martín Mizrahi and
• Gonzalo Abellán

Beilstein J. Nanotechnol. 2023, 14, 927–938, doi:10.3762/bjnano.14.76

• electron microscopy (SEM) Scanning electron microscopy data was acquired using a Hitachi S-4800, with a beam energy of 5 keV. The samples on silicon wafers were directly investigated without any surface coating. Energy dispersive X-ray (EDS) spectroscopy studies were performed on a Hitachi S-4800

• microscope at an accelerating voltage of 20 kV. Atomic force microscopy (AFM) AFM was carried out with a Bruker Dimension Icon microscope in scan-assist-mode. A Bruker Scanasyst-Air silicon tip with a diameter of around 10 nm was used to obtain images with a resolution of 512 × 512 or 1024 × 1024 pixels. The

Ultralow-energy amorphization of contaminated silicon samples investigated by molecular dynamics

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2023, 14, 834–849, doi:10.3762/bjnano.14.68

• . Keywords: angle dependency; argon; contamination; energy dependency; ion bombardment; low energy; molecular dynamics; silicon; simulations; water; Introduction Low-energy ion beams offer substantial improvements and possibilities to reduce the damage production on the surface of samples [1][2]. In recent

• and carbonated components that can be found in the atmosphere [22][23][24], and residuals from past experiments in the chamber, which can include silicon, carbon, or any type of particles that were sputtered previously and adsorbed on the walls of the sample chamber [24][25]. The work in this paper

• will be based on methodologies developed in a previous paper [26], which focused on a silicon sample contaminated with a water layer, and in which we showed the influence of the contamination layer on the sputtering process. In the presence of water on the sample surface, we showed that while the

Silver-based SERS substrates fabricated using a 3D printed microfluidic device

• Phommachith Sonexai,
• Minh Van Nguyen,
• Bui The Huy and
• Yong-Ill Lee

Beilstein J. Nanotechnol. 2023, 14, 793–803, doi:10.3762/bjnano.14.65

• assembled into a monolayer on a liquid/air interface and deposited onto a porous silicon array prepared through a metal-assisted chemical etching approach. By using the developed microfluidic device, enhancement factors of the Raman signal for rhodamine B (at 10−9 M) and melamine (at 10−7 M) of 8.59 × 106

• ], porous aluminum oxide [38], and semiconductors [39] have been reported. Dielectric and semiconductor substrates, such as ZnO nanowires, silicon nanowires, and porous silicon (PS), are particularly popular because of their larger contribution to the amplification of the Raman signal and longer shelf life

• [40][41][42]. Silicon nanostructures with high specific areas are especially popular because they have no fluorescence properties. In this work, we report on the synthesis of a highly sensitive SERS substrate for detecting rhodamine B (RhB) and melamine (MLM) and on the analytical properties of the

In situ magnesiothermic reduction synthesis of a Ge@C composite for high-performance lithium-ion batterie anodes

• Ha Tran Huu,
• Ngoc Phi Nguyen,
• Vuong Hoang Ngo,
• Huy Hoang Luc,
• Minh Kha Le,
• Minh Thu Nguyen,
• My Loan Phung Le,
• Hye Rim Kim,
• In Young Kim,
• Sung Jin Kim,
• Van Man Tran and
• Vien Vo

Beilstein J. Nanotechnol. 2023, 14, 751–761, doi:10.3762/bjnano.14.62

• , is a possible alternative for graphite electrodes due to its high theoretical capacity of 1623 mAh·g−1 (four times higher than that of graphite) and good rate performance due to high electronic (2.1 S·m−1, 1 × 104 times higher than that of silicon) and ionic (6.51 × 10−12 cm2·s−1, 400 times higher

Investigations on the optical forces from three mainstream optical resonances in all-dielectric nanostructure arrays

• Guangdong Wang and
• Zhanghua Han

Beilstein J. Nanotechnol. 2023, 14, 674–682, doi:10.3762/bjnano.14.53

• numerical results to compare the optical trapping capability provided by all-dielectric nanostructures based on the excitation of these three different modes. Using an array of high-index silicon disks with elaborately designed slots, all these three resonances can be supported by the same platform. The

• , these resonances by the spheres are beyond the spectrum of our interest. The presence of PS spheres only leads to some spectral shift of the resonances supported by the silicon nanostructure, which have been fully considered. Using the Maxwell stress tensor (MST) technique [17], the generated optical

• top of the silicon disks represent the trapped PS spheres. The metasurface consists of a 225 nm thick array of silicon disks on a quartz substrate with elliptical slots etched perforating each disk. The number and positions of the slots depend on the specific mode to be excited, and may be different

Thermal transport in kinked nanowires through simulation

• Alexander N. Robillard,
• Graham W. Gibson and
• Ralf Meyer

Beilstein J. Nanotechnol. 2023, 14, 586–602, doi:10.3762/bjnano.14.49

• , anisotropic heat transport has been found in silicon nanosystems [38], where the thermal conductivity can vary based on the lattice orientation along the direction of transport. It is possible that this effect is related to how lattice orientation can affect surface scattering. Zhou, Chen and Hu showed that a

• and more diffusive cases. The 1× scattering rate corresponds to rates observed in silicon, while the higher rates represent an artificial case where ballistic transport is suppressed. Details on the methods used for calculation of scattering rates are elaborated in the Methodology section of this work

• parameters for silicon given by Jean et al. [28] in their work on simulations of nanoporous silicon and germanium. In that work, an isotropic model based on a parabolic fit is used for the description of the dispersion relations of the acoustic phonons. Since we are not attempting to obtain exact

Transferability of interatomic potentials for silicene

• Marcin Maździarz

Beilstein J. Nanotechnol. 2023, 14, 574–585, doi:10.3762/bjnano.14.48

• single-layer silicon, polymorphs was examined. Structural and mechanical properties of flat, low-buckled, trigonal dumbbell, honeycomb dumbbell, and large honeycomb dumbbell silicene phases, were obtained using density functional theory and molecular statics calculations with Tersoff, MEAM, Stillinger

• the “silicon age” because of the great importance of elemental silicon to the modern global economy, mainly concerning electronics. Silicon is one of the most extensively investigated materials, and the quality of its production is impressive. However, this applies to bulk silicon. The success of

• graphene has also sparked interest in other non-carbon 2D materials [1][2]. One of such materials is 2D silicon, called silicene [3][4]. Using first-principles methods with current computer resources enables us to model structures up to about a few hundred atoms. For larger systems, approximate methods are

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms

• Magdalena A. Zając,
• Bogusław Budner,
• Malwina Liszewska,
• Bartosz Bartosewicz,
• Łukasz Gutowski,
• Jan L. Weyher and
• Bartłomiej J. Jankiewicz

Beilstein J. Nanotechnol. 2023, 14, 552–564, doi:10.3762/bjnano.14.46

• GaN/Ag substrates The morphology of the fabricated GaN/Ag substrates was visualized using a scanning electron microscope (SEM) (Quanta 3D FEG, FEI Company, Eindhoven, Netherlands). The thickness of the reference Ag layers, deposited on flat silicon substrates at room temperature, was measured with an

• × objective lens (N.A. = 0.75). The spectrometer was calibrated using an internal silicon wafer, and the spectrum was centered at 520.5 cm−1. The measurement parameters were as follows: acquisition time of 1 s and one accumulation at each point for GaN/Ag substrates, and acquisition time of 5 s and 50

Carbon nanotube-cellulose ink for rapid solvent identification

• Tiago Amarante,
• Thiago H. R. Cunha,
• Claudio Laudares,
• Ana P. M. Barboza,
• Ana Carolina dos Santos,
• Cíntia L. Pereira,
• Vinicius Ornelas,
• Bernardo R. A. Neves,
• André S. Ferlauto and
• Rodrigo G. Lacerda

Beilstein J. Nanotechnol. 2023, 14, 535–543, doi:10.3762/bjnano.14.44

• contact mode. AC160TS silicon cantilevers from Olympus with a typical spring constant of k ≈ 46 N/m, a nominal radius of curvature of r ≈ 7 nm, and a resonant frequency of ω0 ≈ 300 kHz were employed. Heat flow and weight changes of selected solvents were determined by thermogravimetric analysis (TGA

Nanoarchitectonics to entrap living cells in silica-based systems: encapsulations with yolk–shell and sepiolite nanomaterials

• Celia Martín-Morales,
• Jorge Fernández-Méndez,
• Pilar Aranda and
• Eduardo Ruiz-Hitzky

Beilstein J. Nanotechnol. 2023, 14, 522–534, doi:10.3762/bjnano.14.43

• , by inorganic components generated by sol–gel processes from silicon alkoxides is an illustrative example of biohybrids that display the extraordinary functionality inherent to the assembled living components. For instance, bacteria such as Escherichia coli maintain their metabolic activity entrapped

• without staining. Electron microscopy imaging was conducted using a field-emission scanning electron microscope FEI-NOVA NanoSEM 230 equipped with an Apollo XL silicon drift detector from EDAX-Ametek or using a high-resolution JEOL IT500HR/LA microscope equipped with an energy dispersive X-ray