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Search for "traps" in Full Text gives 82 result(s) in Beilstein Journal of Nanotechnology.

Sb2S3 grown by ultrasonic spray pyrolysis and its application in a hybrid solar cell

  • Erki Kärber,
  • Atanas Katerski,
  • Ilona Oja Acik,
  • Arvo Mere,
  • Valdek Mikli and
  • Malle Krunks

Beilstein J. Nanotechnol. 2016, 7, 1662–1673, doi:10.3762/bjnano.7.158

Graphical Abstract
  • curve and series resistance, due to light soaking, are presented in the Supporting Information File 1 (Figure S4). The study of the cause behind this light-soaking effect is not within the scope of the present work. Proposed explanations for this behavior include the filling of electron traps in TiO2
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Published 10 Nov 2016

Dynamic of cold-atom tips in anharmonic potentials

  • Tobias Menold,
  • Peter Federsel,
  • Carola Rogulj,
  • Hendrik Hölscher,
  • József Fortágh and
  • Andreas Günther

Beilstein J. Nanotechnol. 2016, 7, 1543–1555, doi:10.3762/bjnano.7.148

Graphical Abstract
  • -dimensional with m being the particle mass and ω0 the resonance frequency. Such harmonic potentials are typically found in the center of magnetic or optical traps, which are used to confine ultracold atoms in an ultrahigh vacuum environment. This assures lifetimes of the cold-atom tip in the 100 s regime, as
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Published 31 Oct 2016

Enhanced detection of nitrogen dioxide via combined heating and pulsed UV operation of indium oxide nano-octahedra

  • Oriol Gonzalez,
  • Sergio Roso,
  • Xavier Vilanova and
  • Eduard Llobet

Beilstein J. Nanotechnol. 2016, 7, 1507–1518, doi:10.3762/bjnano.7.144

Graphical Abstract
  • concentration and when the sensor is flushed with pure dry air during the cleaning phases, its baseline resistance is never regained. Nitrogen dioxide is an oxidizing species. When a nitrogen dioxide molecule gets adsorbed on the indium oxide, it traps electronic charge from the conduction band of the
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Published 25 Oct 2016

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

  • Ionel Stavarache,
  • Valentin Adrian Maraloiu,
  • Petronela Prepelita and
  • Gheorghe Iordache

Beilstein J. Nanotechnol. 2016, 7, 1492–1500, doi:10.3762/bjnano.7.142

Graphical Abstract
  • ) [42][43][44] compared to the traps formed at the interface between Ge-nps and the surrounding SiO2 [45]. Such increased responsivity (leading to QE higher than 100%) were also observed and reported for other types of Si- or Ge-based structures [15]. The increased current density and the high spectral
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Published 21 Oct 2016

Metal oxide-graphene field-effect transistor: interface trap density extraction model

  • Faraz Najam,
  • Kah Cheong Lau,
  • Cheng Siong Lim,
  • Yun Seop Yu and
  • Michael Loong Peng Tan

Beilstein J. Nanotechnol. 2016, 7, 1368–1376, doi:10.3762/bjnano.7.128

Graphical Abstract
  • Cit and Qit is given by Extraction of interface trap states For the extraction, according to standard convention [6] acceptor and donor type traps states were considered for the n-type MOGFET, and p-type MOGFET operation, respectively. The interface trap charge for both acceptor type and donor type
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Published 30 Sep 2016

Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires

  • Stephen Connaughton,
  • Maria Koleśnik-Gray,
  • Richard Hobbs,
  • Olan Lotty,
  • Justin D. Holmes and
  • Vojislav Krstić

Beilstein J. Nanotechnol. 2016, 7, 1284–1288, doi:10.3762/bjnano.7.119

Graphical Abstract
  • ]. To describe our findings, we first recall that in self-seeded Ge NWs the majority charge carriers are free holes whose concentration depends on the number of charge traps at the NW core/shell interface [11][18]. In particular, for larger diameter NWs those free holes will be predominantly located in
  • free holes into the space-charge region close to the NW surface only, however, cannot remain for all diameters. The available volume for the free holes and the number of charge-traps at the core/shell interface scale with NW diameter. Therefore, with decreasing diameter the holes will extend further
  • and a classical description to be sufficient. Assuming that the number of holes is the same as the number of charge traps, we get for the free-hole concentration nh = 2ηctR·(2Rd – d2)−1 with ηct being the charge trap density per cm2. The NW resistivity can be therefore written as (Supporting
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Published 13 Sep 2016

Photocurrent generation in carbon nanotube/cubic-phase HfO2 nanoparticle hybrid nanocomposites

  • Protima Rauwel,
  • Augustinas Galeckas,
  • Martin Salumaa,
  • Frédérique Ducroquet and
  • Erwan Rauwel

Beilstein J. Nanotechnol. 2016, 7, 1075–1085, doi:10.3762/bjnano.7.101

Graphical Abstract
  • around 2.5 eV is usually attributed to deep-level traps generated by oxygen vacancies, whereas the prominent emission component centered at 3.1 eV is related to Hf3+ defects on the surface of the nanoparticles. The attachment of the nanoparticles to a CNT not only provides a conducting pathway to
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Published 26 Jul 2016

Comparative kinematical analyses of Venus flytrap (Dionaea muscipula) snap traps

  • Simon Poppinga,
  • Tim Kampowski,
  • Amélie Metzger,
  • Olga Speck and
  • Thomas Speck

Beilstein J. Nanotechnol. 2016, 7, 664–674, doi:10.3762/bjnano.7.59

Graphical Abstract
  • about diversity of the snap-trap motion, the functionality of snap traps under varying environmental conditions, and their opening motion. By conducting simple snap-trap closure experiments in air and under water, we present striking evidence that adult Dionaea snaps similarly fast in aerial and
  • submersed states and, hence, is potentially able to gain nutrients from fast aquatic prey during seasonal inundation. We reveal three snapping modes of adult traps, all incorporating snap buckling, and show that millimeter-sized, much slower seedling traps do not yet incorporate such elastic instabilities
  • . Moreover, opening kinematics of young and adult Dionaea snap traps reveal that reverse snap buckling is not performed, corroborating the assumption that growth takes place on certain trap lobe regions. Our findings are discussed in an evolutionary, biomechanical, functional–morphological and biomimetic
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Published 04 May 2016

Single-molecule mechanics of protein-labelled DNA handles

  • Vivek S. Jadhav,
  • Dorothea Brüggemann,
  • Florian Wruck and
  • Martin Hegner

Beilstein J. Nanotechnol. 2016, 7, 138–148, doi:10.3762/bjnano.7.16

Graphical Abstract
  • induced crosstalk [9]. In a stable and well-aligned instrument, the magnitude of the parasitic signal due to optical crosstalk is greatest when both traps overlap and reduces rapidly with increasing trap separation, oscillating about some mean value. By designing DIG-dsDNA-biotin handles (DHs) of specific
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Published 29 Jan 2016

Charge injection and transport properties of an organic light-emitting diode

  • Peter Juhasz,
  • Juraj Nevrela,
  • Michal Micjan,
  • Miroslav Novota,
  • Jan Uhrik,
  • Lubica Stuchlikova,
  • Jan Jakabovic,
  • Ladislav Harmatha and
  • Martin Weis

Beilstein J. Nanotechnol. 2016, 7, 47–52, doi:10.3762/bjnano.7.5

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  • density and carrier mobility, it reflects the impact of charge traps on the carrier transport as well as that of energy barriers on the carrier injection. Figure 5b depicts the voltage dependence of the activation energies estimated from the steady-state current–voltage and impedance spectroscopy
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Published 14 Jan 2016

Distribution of Pd clusters on ultrathin, epitaxial TiOx films on Pt3Ti(111)

  • Christian Breinlich,
  • Maria Buchholz,
  • Marco Moors,
  • Tobias Pertram,
  • Conrad Becker and
  • Klaus Wandelt

Beilstein J. Nanotechnol. 2015, 6, 2007–2014, doi:10.3762/bjnano.6.204

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  • further deposition process. Heterogeneous nucleation occurs on a surface of higher corrugation on which the diffusing atoms are trapped at the sites of highest adsorption energy, which thereby become preferred nucleation and growth sites. Obviously, defect sites are such traps. As shown in Figure 5a
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Published 09 Oct 2015

Current–voltage characteristics of manganite–titanite perovskite junctions

  • Benedikt Ifland,
  • Patrick Peretzki,
  • Birte Kressdorf,
  • Philipp Saring,
  • Andreas Kelling,
  • Michael Seibt and
  • Christian Jooss

Beilstein J. Nanotechnol. 2015, 6, 1467–1484, doi:10.3762/bjnano.6.152

Graphical Abstract
  • Shockley–Read–Hall recombination at deep traps in inorganic semiconductors) or if it involves the recombination of free carriers is highly debated (see, e.g., [45]). Kirchartz et al. [49] introduced a voltage-dependent ideality factor (for both with and without illumination), in order to study
  • recombination mechanisms in polymer–fullerene solar cells. They concluded that in their devices, the recombination is a trap-assisted recombination at lower voltages and surface recombination at higher voltages. However, intramolecular recombination of excitons at traps within single-blend compounds depends
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Published 07 Jul 2015

Atomic force microscopy as analytical tool to study physico-mechanical properties of intestinal cells

  • Christa Schimpel,
  • Oliver Werzer,
  • Eleonore Fröhlich,
  • Gerd Leitinger,
  • Markus Absenger-Novak,
  • Birgit Teubl,
  • Andreas Zimmer and
  • Eva Roblegg

Beilstein J. Nanotechnol. 2015, 6, 1457–1466, doi:10.3762/bjnano.6.151

Graphical Abstract
  • ], micropipette aspiration [16] and magnetic/optical tweezers or optical traps [17][18][19], atomic force microcopy (AFM) is a versatile and potent tool for studying biological structures [20][21][22]. AFM enables both topographical and force curve measurements (atomic force spectroscopy) [23]. The former allow
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Published 06 Jul 2015

Charge carrier mobility and electronic properties of Al(Op)3: impact of excimer formation

  • Andrea Magri,
  • Pascal Friederich,
  • Bernhard Schäfer,
  • Valeria Fattori,
  • Xiangnan Sun,
  • Timo Strunk,
  • Velimir Meded,
  • Luis E. Hueso,
  • Wolfgang Wenzel and
  • Mario Ruben

Beilstein J. Nanotechnol. 2015, 6, 1107–1115, doi:10.3762/bjnano.6.112

Graphical Abstract
  • organic thin film or at the organic/organic interface (exciplexes) act as electron traps, and as a result, the electron mobility can be lowered until the point of suppression (i.e., below the sensitivity of the instrumentation). Theory of HOMO–LUMO level charge mobility In order to shed more light on the
  • electrons at relatively low reduction potentials (as shown by the cyclic voltammetry experiment in Figure 2), is the formation of excimers in the solid state (see Figure 3). Excimers or exciplexes are known to prevent electron diffusion, acting as traps in the organic layer. This is confirmed by the charge
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Published 05 May 2015

Magnetic properties of self-organized Co dimer nanolines on Si/Ag(110)

  • Lisa Michez,
  • Kai Chen,
  • Fabien Cheynis,
  • Frédéric Leroy,
  • Alain Ranguis,
  • Haik Jamgotchian,
  • Margrit Hanbücken and
  • Laurence Masson

Beilstein J. Nanotechnol. 2015, 6, 777–784, doi:10.3762/bjnano.6.80

Graphical Abstract
  • regular-spaced surface traps, which can exist as steps [1][2], atomic sites [3], or the combination of both [4][5], chemical species [6] or dislocation networks [7]. In contrast, when molecules are deposited onto surfaces, the growth is more driven by thermodynamics and molecular arrangements are the
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Published 19 Mar 2015

Liquid-phase exfoliated graphene: functionalization, characterization, and applications

  • Mildred Quintana,
  • Jesús Iván Tapia and
  • Maurizio Prato

Beilstein J. Nanotechnol. 2014, 5, 2328–2338, doi:10.3762/bjnano.5.242

Graphical Abstract
  • approach, the ultrasonication of graphite upon addition of N-(2-mercaptopropionyl)glycine (tiopronin) was reported [9]. Tiopronin is an antioxidant molecule that traps electrons, radicals and peroxides. The ultrasonication of graphite in the presence of tiopronin produced larger graphene layers as compared
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Published 04 Dec 2014

Advances in NO2 sensing with individual single-walled carbon nanotube transistors

  • Kiran Chikkadi,
  • Matthias Muoth,
  • Cosmin Roman,
  • Miroslav Haluska and
  • Christofer Hierold

Beilstein J. Nanotechnol. 2014, 5, 2179–2191, doi:10.3762/bjnano.5.227

Graphical Abstract
  • summarize the current knowledge on this topic, focusing not only on the effect of adsorbates but also the effect of dielectric charge traps on the electrical transport in single-walled carbon nanotube transistors that are to be used in sensing applications. Recently, contact-passivated, open-channel
  • of charge traps have reduced the hysteresis, drift and low-frequency noise in carbon nanotube transistors. While open challenges such as large-scale fabrication, selectivity tuning and noise reduction still remain, these results demonstrate considerable progress in transforming the promise of carbon
  • ] discuss the effect of water adsorption on substrate-bound carbon nanotube devices, lying on SiO2 substrates (Figure 5a and Figure 5b). Due to the hydrophilic surface chemistry of SiO2, a thin water layer is present close to the nanotube. These water molecules then act as charge traps that screen the gate
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Published 20 Nov 2014

Sequence-dependent electrical response of ssDNA-decorated carbon nanotube, field-effect transistors to dopamine

  • Hari Krishna Salila Vijayalal Mohan,
  • Jianing An and
  • Lianxi Zheng

Beilstein J. Nanotechnol. 2014, 5, 2113–2121, doi:10.3762/bjnano.5.220

Graphical Abstract
  • of the ssDNA–DA complex containing bases G and A, which have better affinity to SWCNT [35], causes the charge traps formed by ssDNA–DA adducts to be in greater proximity to the nanotube surface, thus, increasing the hysteresis gap (+∆H). Anions such as UA are predominantly involved in hydrogen bond
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Published 13 Nov 2014

Effect of channel length on the electrical response of carbon nanotube field-effect transistors to deoxyribonucleic acid hybridization

  • Hari Krishna Salila Vijayalal Mohan,
  • Jianing An,
  • Yani Zhang,
  • Chee How Wong and
  • Lianxi Zheng

Beilstein J. Nanotechnol. 2014, 5, 2081–2091, doi:10.3762/bjnano.5.217

Graphical Abstract
  • between probe DNA and cDNA whereas the negative shift in Vfth implies electron transfer to the SWCNT by the negatively charged cDNA molecules as the possible mechanisms [27]. The increase in H is proportional to the number of charge traps formed by ds-DNA hybrids immobilized on SWCNT, which indicates the
  • guanine and adenine bases [28][31]. Similarly, the shift in Vth to more positive values for the reverse sweep is an indicator of hole trapping by the cytosine and thymine bases [28][31]. Thus, the increase in charge traps in the channel region leads to an overall shift in Vth for forward and reverse
  • . Similarly, the additional number of charge traps formed during hybridization increases along the length of the nanotube, thus, offering more trapping/detrapping sites leading to an increase in ΔH with L. Hence, ultra-long channel FETs exhibited greater charge transfer and charge trapping mechanisms, but the
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Published 12 Nov 2014

Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide

  • Domenico Melisi,
  • Maria Angela Nitti,
  • Marco Valentini,
  • Antonio Valentini,
  • Teresa Ligonzo,
  • Giuseppe De Pascali and
  • Marianna Ambrico

Beilstein J. Nanotechnol. 2014, 5, 1999–2006, doi:10.3762/bjnano.5.208

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  • linear dependence of the photocurrent on the light intensity is an important achievement in a photodetector. Nevertheless in such devices (either p-i-n or Schottky diodes) the value of the exponent γ depends not only on the intrinsic properties of the photoactive material (traps and recombination centres
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Published 05 Nov 2014

Silicon and germanium nanocrystals: properties and characterization

  • Ivana Capan,
  • Alexandra Carvalho and
  • José Coutinho

Beilstein J. Nanotechnol. 2014, 5, 1787–1794, doi:10.3762/bjnano.5.189

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  • interface-related traps cannot be neglected. The interface traps are located at the substrate/oxide-matrix interface (most commonly Si–SiO2) and at the NCs/oxide-matrix interface. Unlike the other traps located in the oxide matrix (fixed and mobile oxide charges), interface traps are in electrical
  • to increase the density of the interface traps. However, most of the interface traps can be neutralized by low-temperature (about 450 °C) annealing with hydrogen or forming gas [24]. In general, the formation of Ge NC is much more complicated than that of Si NC because GeO2 is thermodynamically less
  • simple MOS structure, with Ge NCs embedded in the SiO2 film deposited on a Si substrate. In order to check for the existence of the deep level traps coming from the Si/SiO2 interface, temperature dependent C–V measurements have been performed. The activation energy of the electron emission has been
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Published 16 Oct 2014

From sticky to slippery: Biological and biologically-inspired adhesion and friction

  • Stanislav N. Gorb and
  • Kerstin Koch

Beilstein J. Nanotechnol. 2014, 5, 1450–1451, doi:10.3762/bjnano.5.157

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  • of cells, insect feet, snake skin, plant traps, and bird wings are just a few striking examples of a tremendous diversity of biological surfaces and systems with remarkable contact behavior about many of which our knowledge is limited compared to medically relevant biotribosystems. Since the 90s a
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Published 03 Sep 2014

Insect attachment on crystalline bioinspired wax surfaces formed by alkanes of varying chain lengths

  • Elena Gorb,
  • Sandro Böhm,
  • Nadine Jacky,
  • Louis-Philippe Maier,
  • Kirstin Dening,
  • Sasha Pechook,
  • Boaz Pokroy and
  • Stanislav Gorb

Beilstein J. Nanotechnol. 2014, 5, 1031–1041, doi:10.3762/bjnano.5.116

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  • system and may serve as a defence mechanism against herbivores and nectar robbers or as a mechanism preventing the escape of insects from traps of carnivorous plants and kettle trap flowers. Plant surface features such as particular cell arrangements, shapes, and orientation, as well as the presence of
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Published 14 Jul 2014

Photoactivation of luminescence in CdS nanocrystals

  • Valentyn Smyntyna,
  • Bogdan Semenenko,
  • Valentyna Skobeeva and
  • Nikolay Malushin

Beilstein J. Nanotechnol. 2014, 5, 355–359, doi:10.3762/bjnano.5.40

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  • influence of humid argon and oxygen on the photoinduced amplification of the photoluminescence intensity of CdSe/ZnS quantum dots of is presented. It is suggested that this effect is the result of solvation of the charged states of the surface traps. Two competing processes may occur during the irradiation
  • concentration of water molecules. Thus, our results are consistent with the assumptions made in [5], in the sense that the effect of PFE is the result of photoactivation and stabilization of surface traps through adsorption of water molecules under conditions of high humidity. According to [1][18][19], the
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Published 25 Mar 2014

AFM as an analysis tool for high-capacity sulfur cathodes for Li–S batteries

  • Renate Hiesgen,
  • Seniz Sörgel,
  • Rémi Costa,
  • Linus Carlé,
  • Ines Galm,
  • Natalia Cañas,
  • Brigitta Pascucci and
  • K. Andreas Friedrich

Beilstein J. Nanotechnol. 2013, 4, 611–624, doi:10.3762/bjnano.4.68

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  • use of highly ordered mesoporous carbon with a bimodal pore structure with a high specific area and a large pore volume is beneficial. It traps a part of the polysulfides for a certain time before release, thereby reduces the electrochemical irreversibility and can lead to a very high and stable
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Published 04 Oct 2013
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