3D nano-structures for laser nano-manipulation

• Gediminas Seniutinas,
• Lorenzo Rosa,
• Gediminas Gervinskas,
• Etienne Brasselet and
• Saulius Juodkazis

Beilstein J. Nanotechnol. 2013, 4, 534–541, doi:10.3762/bjnano.4.62

• from the interaction with a focused laser beam [1]. Nano-focusing and light control, which are possible with metallic plasmonic structures, are very attractive to engineer optical traps, in order to accurately position and manipulate objects down to the nanometer-scale [2]. Plasmonic nano-antennas have

A look underneath the SiO₂/4H-SiC interface after N₂O thermal treatments

• Patrick Fiorenza,
• Filippo Giannazzo,
• Lukas K. Swanson,
• Alessia Frazzetto,
• Simona Lorenti,
• Mario S. Alessandrino and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2013, 4, 249–254, doi:10.3762/bjnano.4.26

• N2O have a beneficial effect on the SiO2 insulator and on the SiO2/4H-SiC interface due to the passivation of oxide defects and interface traps by the incorporated nitrogen, the impact of these thermal treatments on the electrical properties of the 4H-SiC substrate is still under debate. Recently

• be invoked to explain the better nitrogen incorporation during POA, leading to a more efficient passivation of interface traps and to a higher compensation of interfacial SiC. In fact, for a macroscopically stepped surface, the SiO2/SiC interface is not only formed on the basal plane (0001), but a

Micro- and nanoscale electrical characterization of large-area graphene transferred to functional substrates

• Gabriele Fisichella,
• Salvatore Di Franco,
• Patrick Fiorenza,
• Raffaella Lo Nigro,
• Fabrizio Roccaforte,
• Cristina Tudisco,
• Guido G. Condorelli,
• Nicolò Piluso,
• Noemi Spartà,
• Stella Lo Verso,
• Corrado Accardi,
• Cristina Tringali,
• Sebastiano Ravesi and
• Filippo Giannazzo

Beilstein J. Nanotechnol. 2013, 4, 234–242, doi:10.3762/bjnano.4.24

• have been obtained. It is worth noting that the effect of traps at the graphene/SiO2 interface is not accounted for in the determination of μp from Equation 2. This approximation implies an overestimation of the hole density p, which is actually reduced with respect to the value induced by the field

• effect due to carrier trapping, and, consequently, an underestimation of the carrier mobility. Furthermore, the presence of charged traps at the graphene/substrate interface strongly affects the mobility in graphene due to Coulomb scattering [11][26], leading to a degradation with respect to the ideal

• value in the absence of interface traps. A similar macroscopic electrical characterization using TLM structures was performed also in CVD graphene transferred onto PEN. In this case, the sheet resistance and specific contact resistance only were measured, whereas an estimate of mobility and carrier

Influence of diffusion on space-charge-limited current measurements in organic semiconductors

• Thomas Kirchartz

Beilstein J. Nanotechnol. 2013, 4, 180–188, doi:10.3762/bjnano.4.18

• reasonably accurate mobility values. Keywords: current–voltage curves; electron-only device; drift–diffusion; mobility; simulation; traps; Introduction A frequently used method to analyze charge carrier transport in organic semiconductors is based on space-charge-limited current measurements performed on

• ][21][22][23][24][25][26]. While there have been numerous attempts to develop models to take traps in unipolar devices into account [27][28][29][30][31], nearly all of them still rely on drift as the only transport mechanism. However, traps will often lead to a situation where diffusion currents cannot

• be neglected anymore, which makes analytical approximations for this situation problematic [7][10][13]. In this article numerical simulations are used to show how the presence of traps leads to deviations from the analytical equations typically used to analyze single-carrier current–voltage curves. I

Horizontal versus vertical charge and energy transfer in hybrid assemblies of semiconductor nanoparticles

• Gilad Gotesman,
• Rahamim Guliamov and
• Ron Naaman

Beilstein J. Nanotechnol. 2012, 3, 629–636, doi:10.3762/bjnano.3.72

• quenching was independent of the linker length. This effect is well known for CdSe NPs; it results from the formation of surface traps owing to the thiol binding [28][29][30][31]. The PL quenching, which is independent of the MT length, indicates that the number of traps is the same for all linkers, and

Mesoporous MgTa₂O₆ thin films with enhanced photocatalytic activity: On the interplay between crystallinity and mesostructure

• Jin-Ming Wu,
• Igor Djerdj,
• Till von Graberg and
• Bernd M. Smarsly

Beilstein J. Nanotechnol. 2012, 3, 123–133, doi:10.3762/bjnano.3.13

• subsequent calcination, three factors readily affecting the photocatalytic activity changed dramatically in the current investigation, i.e., crystallinity, grain size, and ordered mesopores [27][28]. Defects serve as traps for photogenerated electron–hole pairs [26]; therefore, improved crystallinity

The effect of surface anisotropy in the slippery zone of Nepenthes alata pitchers on beetle attachment

• Elena V. Gorb and
• Stanislav N. Gorb

Beilstein J. Nanotechnol. 2011, 2, 302–310, doi:10.3762/bjnano.2.35

• characteristic for carnivorous plants from the genus Nepenthes [1][2]. These traps, using a passive pitfall mechanism for capturing, mainly, invertebrates, consist of several functional zones specialized for prey attraction, capture, retention, digestion, and uptake of nutrients [3][4][5][6]. During the past few