High-resolution electrical and chemical characterization of nm-scale organic and inorganic devices

  1. editorImage
  1. Editors: Prof. Ernst Meyer, Universität Basel
    and Dr. Pierre Eyben, IMEC, Leuven

Almost ever since the advent of the microelectronics adventure, silicon-based semiconductor technology has been largely dominant. However, for a few years now this technology has exhibited some fundamental limitations in miniaturization and processing speed and power consumption. Hence, new inorganic semiconductor materials and new architectures are being progressively introduced. The development of high-performance devices is not the only objective of the electronic industry. The need for low-cost devices processed industrially on flexible and light substrates over very large surfaces has led electronic components based on organic semiconductors. The organic materials used nowadays are typically made of single molecules in highly ordered assemblies or of polymeric semiconductors in thin films. It is important to develop and improve two- and threedimensional characterization techniques that can be utilized on both organic and inorganic semiconductors. These techniques should allow nanometer spatial resolution over a broad dynamic range. Ideally, they should also be able to probe the elemental distribution and to provide information on chemical bonding.

  • Editorial
  • Published 16 May 2013
Graphical Abstract

Beilstein J. Nanotechnol. 2013, 4, 318–319, doi:10.3762/bjnano.4.35

  • Full Research Paper
  • Published 11 Mar 2013

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Graphical Abstract

Beilstein J. Nanotechnol. 2013, 4, 180–188, doi:10.3762/bjnano.4.18

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  3. Astrid Wachauer,
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Graphical Abstract

Beilstein J. Nanotechnol. 2013, 4, 208–217, doi:10.3762/bjnano.4.21

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  • Published 02 Apr 2013

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Graphical Abstract

Beilstein J. Nanotechnol. 2013, 4, 234–242, doi:10.3762/bjnano.4.24

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  5. Simona Lorenti,
  6. Mario S. Alessandrino and
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  • Published 08 Apr 2013

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Graphical Abstract

Beilstein J. Nanotechnol. 2013, 4, 249–254, doi:10.3762/bjnano.4.26

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Graphical Abstract

Beilstein J. Nanotechnol. 2013, 4, 255–261, doi:10.3762/bjnano.4.27

  • Full Research Paper
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Graphical Abstract

Beilstein J. Nanotechnol. 2013, 4, 429–440, doi:10.3762/bjnano.4.50

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  8. R. Stanley Williams
  • Full Research Paper
  • Published 07 Aug 2013

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Graphical Abstract

Beilstein J. Nanotechnol. 2013, 4, 467–473, doi:10.3762/bjnano.4.55

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