3 article(s) from Agnello, Simonpietro
- Full Research Paper
- Published 16 Jan 2019
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Figure 1: Sample A (SiO2+Ge, 33 mJ/pulse); a) SEM image of an agglomerate/aggregate of nanoparticles, inset z...
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Figure 2: Sample A (SiO2+Ge, 33 mJ/pulse); a) SEM image of the zone indicated as square 2 in Figure 1a; b) CL panchrom...
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Figure 3: Sample A (SiO2+Ge, 33 mJ/pulse); a) TEM image of the region labeled 1 in Figure 1a; b) details of the red sq...
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Figure 4: Sample B (SiO2+Ge, 165 mJ/pulse); a) SEM image of an aggregate/agglomerate of nanoparticles, inset ...
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Figure 5: Sample B (SiO2+Ge, 165 mJ/pulse); a) TEM image of the same agglomerate/aggregate of nanoparticles o...
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Figure 6: SEM image of an aggregate/agglomerate of sample C (SiO2 400 mJ/pulse); b) details from panel a.
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- Full Research Paper
- Published 10 Feb 2017
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Figure 1: (a) AFM morphology image and (b) micro-Raman spectra of the as transferred graphene on SiO2 substra...
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Figure 2: (Top) Comparison of the in situ Raman spectra of a Gr sample as transferred and subsequently treate...
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Figure 3: (Top) Comparison of the in situ Raman spectra of a Gr sample as transferred and subsequently treate...
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Figure 4: Correlation map of the 2D and G peak positions measured at room temperature in the Gr/SiO2/Si sampl...
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Figure 5: In situ Raman spectra of MoS2 before thermal treatments (bottom), after thermal treatment in O2 at ...
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Figure 6: MoS2 flake after the thermal treatment up to 430 °C in O2; optical microscopy (left) and AFM (right...
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Figure 7: Ex situ Raman spectra of MoS2 before thermal treatment (bottom line), after thermal treatment in O2...
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- Full Research Paper
- Published 25 Jan 2017
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Figure 1: (a) Schematic including an optical image of a MoS2 transistor with the SiO2/Si backgate and Ni/Au s...
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Figure 2: Semilog scale plot (a) and linear scale plot (b) of the transfer characteristics (ID−VG) measured a...
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Figure 3: (a) Semilog scale plot of the transfer characteristics (ID−VG) in the subthreshold regime at differ...
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Figure 4: (a) Linear scale plot of ID (left axis) and of the transconductance gm (right axis) at VDS = 0.1 V ...
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Figure 5: (a) Temperature dependence of the field effect mobility extracted from the linear region of the ID−V...
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Figure 6: Output characteristics ID−VDS for different gate bias values from −56 to 0 V at different temperatu...
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Figure 7: (a) On-resistance Ron vs 1/(VG−Vth,lin) at different temperatures. (b) Temperature dependence of RC....
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Figure 8: (a) Output characteristics (ID−VDS) for different gate bias values from −56 to 0 V at T = 298 K. (b...
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