10 article(s) from Utke, Ivo
Figure 1: (a) Scanning electron micrograph of a FEBID pad. (b) Atomic force micrograph of the same pad. (c + ...
Figure 2: (a) Raman spectra of a FEBID pad, FEBID precursor and the substrate. The complex structure of the p...
Figure 3: (a) Real and (b) imaginary part of the dielectric function of the measured FEBID material, averaged...
Figure 4: (a + b) Scanning electron micrographs of a single nanopillar (a) and a copper helix with three pitc...
Figure 5: (a) Array of 8 × 8 nanocones with a distance of 400 nm, base diameter of 80 nm and a height of 250 ...
Figure 1: Scanning electron micrographs of deposits from (a, e) AgO2Me2Bu and (b, f) AgO2F5Prop using a beam ...
Figure 2: Dwell-time series for a beam current of 150 pA using (a) AgO2Me2Bu and (b) AgO2F5Prop as precursor ...
Figure 3: Scanning electron micrographs of single silver pillars obtained after continuous spot irradiation f...
Figure 1: Scanning electron micrographs of deposits from AgO2CC2F5 on bulk 200 nm SiO2/Si using a 25 keV/0.25...
Figure 2: SEM images of box deposits with the same electron dose of 7.44 nC/µm2 but different dwell and refre...
Figure 3: Images of a line deposit on a carbon membrane. (a) Scanning electron micrograph of the line deposit...
Figure 4: Dark field scanning transmission electron micrographs of the line deposit. (a) Overview image of th...
Figure 5: LineTV: FEBID line connecting four gold electrodes for four point probe measurements on bulk SiO2/S...
Figure 6: Transmission electron micrographs of the carbon membrane after deposition. (a) Typical dark field S...
Figure 1: Optical microscopy images showing the 200 nm SiO2/Si substrate and gold electrodes together with (a...
Figure 2: SEM-based average diameters of Co, Cu and Au FEBID agglomerates as function of the annealing temper...
Figure 3: Top: Raman spectra in the carbon range as a function of the post-growth annealing temperature of (a...
Figure 4: Electrical resistivities of Co–C, Cu–C and Au–C FEBID materials as a function of the annealing temp...
Figure 5: (a) Time-evolution of the electrical resistance during annealing in a 200 ppm H2 atmosphere, reveal...
Figure 1: Schematic of an array of randomly distributed vertically aligned high-aspect-ratio nanocylinders. T...
Figure 2: Schematic illustration of the geometrical model used to approximate an array of randomly distribute...
Figure 3: Top view schematic of the attenuation of a transverse flux I of molecules through the slice of a na...
Figure 4: Illustration of the equivalent pore diameter (Equation 8) and the mean transverse penetration distance calcul...
Figure 5: Schematic illustration of the angles defined above. The axis x is the direction of the transverse p...
Figure 6: Schematic illustration of the flight geometry between two subsequent collisions of the molecule wit...
Figure 7: Comparison of the diffusion coefficient introduced in this work given by Equation 26 and the one from [17] given b...
Figure 1: Figure 8 in the original article: Calculated resistivity from the resistance measurement of a Cu–C ...
Figure 1: Steady state vertical growth rate of a deposit plotted as a function of electron flux. The linear r...
Figure 2: Potential energy diagram for adsorption governed by a single potential well at the surface. Modifie...
Figure 3: Adsorbate concentration (Na) versus time in the absence of electron irradiation (here, Na = 0 at t ...
Figure 4: Gaussian electron flux profile (Ω = 10 nm) and two tophat flux profiles with a radius of 250 nm (β ...
Figure 5: Molecule flow regimes for two flow rates Q of H2 and H2O. Note that 1 sccm = 4.48 × 1017 molecules/...
Figure 6: Illustration of the two capillary nozzle geometries implemented in the GIS simulator. Left: straigh...
Figure 7: Precursor flux distributions at the substrate under molecular flow conditions for conical nozzles w...
Figure 8: Steady state growth rate versus r calculated at a number of substrate temperatures using Equation 15 and a Gau...
Figure 9: First FEBIP resolution scaling law for Gaussian and tophat electron beams.
Figure 10: Illustration of two adsorbate FEBIP where the molecules are supplied by two capillaries and impinge...
Figure 11: (a) Adsorbate concentrations Ne and Nd versus time, calculated in the absence of electron irradiati...
Figure 12: Potential energy diagram for the case of chemisorption governed by a potential well of depth Ec and...
Figure 13:
(a) Steady state concentrations of physisorbed and chemisorbed
adsorbates versus pressure, calcul...
Figure 14: Steady-state vertical growth rate versus substrate temperature for a precursor that undergoes activ...
Figure 15: Flowchart showing how F radicals (represented by α) generated by electron induced dissociation of NF...
Figure 16: (a) Etch rate of Si calculated using Equation 61 as a function of electron flux f. (b,c) Corresponding steady ...
Figure 17: Calculated changes in dissociation yields YA and YB (per primary electron as defined in Equation 66 and Equation 67) and ...
Figure 18: Deposit geometries analogous to those shown in Figure 11b, simulated using Equation 70 and Equation 71, a Gaussian electron-beam pr...
Figure 19: FEBID growth rates simulated using Equation 75 and Equation 76, a Gaussian electron-beam profile (Ω = 5 nm) and substrate...
Figure 20: Examples of deposit geometries simulated using exposure times (t) of 5 ms; 10 ms; 50 ms; 100 ms, a ...
Figure 21: Examples of deposit geometries simulated using exposure times (t) of 5 ms; 10 ms; 50 ms; 100 ms, a ...
Figure 1: Sketch of post-growth annealing experiments: a) conventional heating using a hot plate in an SEM, b...
Figure 2: TEM of as-deposited lines and squares from Cu(hfac)2 on an amorphous carbon membrane on a TEM grid....
Figure 3: Post-growth annealing of FEBID line from Cu(hfac)2 between four gold electrodes. SEM tilt images (6...
Figure 4: Post-growth laser annealing of FEBID deposits from Cu(hfac)2. SEM top view images of a) as-deposite...
Figure 5: Periodic 3D FEBID line deposits from (hfac)Cu(DMB) between gold electrodes on SiO2/Si. SEM tilt ima...
Figure 6: In situ TEM annealing for 10 min at 220 °C on a line deposit from Cu(hfac)2 shown in Figure 2. a) STEM high...
Figure 7: TEM in situ annealing of FEBID rods grown from (hfac)Cu(VTMS). a) Dark field image of an as-deposit...
Figure 8: Calculated resistivity from the resistance measurement of a Cu–C line during in situ post-growth he...
Figure 1: Efficiency enhancement mechanisms for photocatalysis using CNT–TiO2 nanocomposites. (a) CNT scaveng...
Figure 2: A schematic illustration of one cycle in ALD: (a) The first precursor flows into the chamber and re...
Figure 3: Micrographs of TiO2 deposited on MW-CNT by using ALD with different number of cycles to control the...
Figure 4: A schematic illustration of the principle in STEM-EELS: (a) the microscope configuration in the STE...
Figure 5: An atomic-resolution chemical mapping of Ba-doped SrTiO3 nanoparticles: (a) the HAADF-STEM image of...
Figure 6: An example of electron beam damage during EELS acquisition. Note that there is a chemical shift in ...
Figure 1: Illustration of one ALD cycle on a VACNT array. Upon exposure to the precursor gas (a: bulk gas dif...
Figure 2: Flow chart of the precursor exposure/adsorption simulation for one ALD cycle.
Figure 3: Results of the precursor adsorption kinetics simulation while using the parameters defined in Table 1. The...
Figure 4: Comparison of the simplified model (Equation 18) and the simulation of the full diffusion model (solid line) w...
Figure 5: Plot of deposited oxide thickness with respect to the VACNT depth for a multi-cycle ALD process, de...
Figure 6: Experimental results for TiO2 coated VACNTs. (a) An SEM image of a VACNT array coated with 400 cycl...