Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation

• Nan Guan,
• Andrey Babichev,
• Martin Foldyna,
• Dmitry Denisov,
• François H. Julien and
• Maria Tchernycheva

Beilstein J. Nanotechnol. 2018, 9, 2248–2254, doi:10.3762/bjnano.9.209

• communication systems are required [5][6]. The technology for visible wavelength PICs is much less mature than for IR PICs, and different approaches have been explored. One exploratory approach for visible photonics consists of the monolithic integration of InGaN emitters/detectors with GaN-based waveguides [7

• ][8][9]. This approach presents the advantage of providing both passive and active elements, however it brings many fabrication challenges (such as the necessity of low-loss GaN waveguides, etc). For passive photonic circuits used in the visible light range, SiN circuitry is gaining increasing

• extensive research on NW integrated platforms [28][29][30]. The first important step is the on-chip manipulation of light, which can be achieved by integrating NW emitters and detectors with waveguides. Park et al. demonstrated the coupling between an electrically pumped single InGaN/GaN NW LED and a 2D

Light extraction efficiency enhancement of flip-chip blue light-emitting diodes by anodic aluminum oxide

• Yi-Ru Huang,
• Yao-Ching Chiu,
• Kuan-Chieh Huang,
• Shao-Ying Ting,
• Po-Jui Chiang,
• Chih-Ming Lai,
• Chun-Ping Jen,
• Snow H. Tseng and
• Hsiang-Chen Wang

Beilstein J. Nanotechnol. 2018, 9, 1602–1612, doi:10.3762/bjnano.9.152

• the light extraction efficiency (LEE) of the LED [10]. Ding et al. fabricated a LED with enhanced LEE by depositing a patterned sapphire substrate (PSS) on a flip-chip LED with GaN as a base layer [11]. Shei et al. enhanced the LEE of LEDs by 27% by producing a microstructure on the surface of LEDs

• with Ga-doped zinc oxide (GZO)/GaN as the base layer and then reducing the total reflectivity by changing the shape, thickness, and density of the microstructure through dry etching [12]. Li et al. increased the LEE of an InGaN-monolayer quantum-well LED by 1.8–1.9 times relative to that of a

• traditional LED by producing a TiO2 microstructure array on p-GaN through dipping and rapid convective deposition and using noncrystalline TiO2 and anatase TiO2 with a diameter of 520 nm [13]. Huang et al. used Zn and Mg for ion implantation at the GZO thin layer and then adopted rapid thermal annealing to

Cathodoluminescence as a probe of the optical properties of resonant apertures in a metallic film

• Kalpana Singh,
• Evgeniy Panchenko,
• Babak Nasr,
• Amelia Liu,
• Lukas Wesemann,
• Timothy J. Davis and
• Ann Roberts

Beilstein J. Nanotechnol. 2018, 9, 1491–1500, doi:10.3762/bjnano.9.140

• GaAs nanowires [46], modes of single and pairs of AlGaAs disks [47], the optical properties of quantum discs of GaN/AlN in GaN nanowires [48] and various modes of gold nanodecahedra [49]. The potential of CL used in transmission to observe various colour centres in nanodiamonds has also been

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• change of the chemical composition of the contacting materials. Electrical-current-induced thermal effects have been studied in various one-dimensional nanostructures such as Si [92], Ge [10][54], carbon nanotubes (CNTs) [93][94][95], GaN [96][97] and ZnTe [98]. The evolution of a nanocontact between a

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• , Institut d’Electronique Fondamentale, UMR 8622 CNRS, University Paris Sud, University Paris-Saclay, 91405 Orsay cedex, France 10.3762/bjnano.9.17 Abstract In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a

• thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth parameters on the geometrical properties of the GaN NW arrays. First, we find that the annealing procedure carried out prior to deposition of the AlN buffer

• the study, we introduce a new dopant-stimulated method for GaN nanotube-like nanostructure synthesis using a high-intensity Si flux. Transmission electron microscopy was used to investigate the morphological features of the GaN nanostructures. The synthesized structures have a hexagonal cross-section

Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire

• Tino Wagner,
• Fabian Menges,
• Heike Riel,
• Bernd Gotsmann and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2018, 9, 129–136, doi:10.3762/bjnano.9.15

• substrate, = geWc = (1.8 ± 0.6) × 107 W·m−2·K−1. Both values are below the interfacial conductivity of the nanowire to the oxide. This is not unusual, as shown before for GaN nanowires [36]. Because the exact contact geometries are unknown, the error in the estimation of τc is rather large, and could be

Synthesis of metal-fluoride nanoparticles supported on thermally reduced graphite oxide

• Alexa Schmitz,
• Kai Schütte,
• Vesko Ilievski,
• Juri Barthel,
• Laura Burk,
• Rolf Mülhaupt,
• Junpei Yue,
• Bernd Smarsly and
• Christoph Janiak

Beilstein J. Nanotechnol. 2017, 8, 2474–2483, doi:10.3762/bjnano.8.247

• by grant Ja466/31-2 and in the core-facilities program through grant MA 1280/40-1. The authors also gratefully acknowledge financial support of research on functionalized graphene research by the European Community as part of the EU Graphene Flagship (GAN 696656). We thank Mr. Manuel Endres for the

Angstrom-scale flatness using selective nanoscale etching

• Takashi Yatsui,
• Hiroshi Saito and
• Katsuyuki Nobusada

Beilstein J. Nanotechnol. 2017, 8, 2181–2185, doi:10.3762/bjnano.8.217

• . Subsequently, the molecules are dissociated by the ONF, and the dissociated radicals selectively etch the protrusions. Finally, the ONF disappears and the etching process stops automatically. Near-field etching is performed using Cl2 gas for glass, GaN [9], and plastic surfaces, and O2 gas for diamond and

Enhancement of mechanical and electrical properties of continuous-fiber-reinforced epoxy composites with stacked graphene

• Naum Naveh,
• Olga Shepelev and
• Samuel Kenig

Beilstein J. Nanotechnol. 2017, 8, 1909–1918, doi:10.3762/bjnano.8.191

• Naum Naveh Olga Shepelev Samuel Kenig Shenkar College of Engineering and Design, 12 Anna Frank St., Ramat Gan 5252626, Israel Israel Plastics and Rubber Center, Technion City, Haifa 3200004, Israel 10.3762/bjnano.8.191 Abstract Impregnation of expandable graphite (EG) after thermal treatment with

Surface improvement of organic photoresists using a near-field-dependent etching method

• Felix J. Brandenburg,
• Tomohiro Okamoto,
• Hiroshi Saito,
• Benjamin Leuschel,
• Olivier Soppera and
• Takashi Yatsui

Beilstein J. Nanotechnol. 2017, 8, 784–788, doi:10.3762/bjnano.8.81

• effective in producing atomically flat surfaces in various materials, including GaN [9], glass [10] and even diamond [11] and has shown to be effective on both flat and patterned surfaces. According to theory, the etching effect originates from radical gas-phase components. More precisely, ambient O2

• eV; excitation power density: 0.8 W/cm2) and (2) GaN laser (405 nm; 3.06 eV; excitation power: 39 mW). These lasers were carefully selected to be below the dissociation energy of O2 (5.12 eV) in order to avoid conventional photochemical etching through direct O2 dissociation. The light intensity for

• photoresist after 120 min of near-field etching with a He–Cd laser (325 nm, 3.81 eV) ((a) before and (b) after) and a GaN laser (405 nm; 3.06 eV) ((c) before and (d) after). (e) and (f) provide details of (c) and (d) respectively at the same positions (white dashed line). (a) Photoresist profile before (black

Localized surface plasmons in structures with linear Au nanoantennas on a SiO₂/Si surface

• Ilya A. Milekhin,
• Sergei A. Kuznetsov,
• Ekaterina E. Rodyakina,
• Alexander G. Milekhin,
• Alexander V. Latyshev and
• Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2016, 7, 1519–1526, doi:10.3762/bjnano.7.145

• of the theoretical study of coupling between the LSPR and SO phonon modes in the nanoantenna structures formed on a GaN substrate were also reported [32]. A significant increase of the phonon response (1900 times) at the SO phonon frequencies is observed for the structures with nanoantenna arrays

Viability and proliferation of endothelial cells upon exposure to GaN nanoparticles

• Tudor Braniste,
• Ion Tiginyanu,
• Tibor Horvath,
• Simion Raevschi,
• Serghei Cebotari,
• Marco Lux,
• Axel Haverich and
• Andres Hilfiker

Beilstein J. Nanotechnol. 2016, 7, 1330–1337, doi:10.3762/bjnano.7.124

• Moldova 10.3762/bjnano.7.124 Abstract Nanotechnology is a rapidly growing and promising field of interest in medicine; however, nanoparticle–cell interactions are not yet fully understood. The goal of this work was to examine the interaction between endothelial cells and gallium nitride (GaN

• ) semiconductor nanoparticles. Cellular viability, adhesion, proliferation, and uptake of nanoparticles by endothelial cells were investigated. The effect of free GaN nanoparticles versus the effect of growing endothelial cells on GaN functionalized surfaces was examined. To functionalize surfaces with GaN, GaN

• nanoparticles were synthesized on a sacrificial layer of zinc oxide (ZnO) nanoparticles using hydride vapor phase epitaxy. The uptake of GaN nanoparticles by porcine endothelial cells was strongly dependent upon whether they were fixed to the substrate surface or free floating in the medium. The endothelial

Sonochemical co-deposition of antibacterial nanoparticles and dyes on textiles

• Ilana Perelshtein,
• Anat Lipovsky,
• Nina Perkas,
• Tzanko Tzanov and
• Aharon Gedanken

Beilstein J. Nanotechnol. 2016, 7, 1–8, doi:10.3762/bjnano.7.1

• Ilana Perelshtein Anat Lipovsky Nina Perkas Tzanko Tzanov Aharon Gedanken Bar-Ilan University, Department of Chemistry, Bar-Ilan Institute of Nanotechnology & Advanced Materials, IL-52900 Ramat-Gan, Israel Universitat Politècnica de Catalunya, Group of Molecular and Industrial Biotechnology

Blue and white light emission from zinc oxide nanoforests

• Nafisa Noor,
• Luca Lucera,
• Thomas Capuano,
• Venkata Manthina,
• Alexander G. Agrios,
• Helena Silva and
• Ali Gokirmak

Beilstein J. Nanotechnol. 2015, 6, 2463–2469, doi:10.3762/bjnano.6.255

• -cost alternative to GaN [8]. It is also one of the substances that sublimate congruently at atmospheric pressure [15][16][17]: The results we present here are from electrical experiments performed on ZnO nanoforests formed by high-density nanowires grown on highly doped silicon microstructures. We have

• through multiple defect levels or because of the optical excitation of materials by the ultraviolet source [21]. Blue light has been previously observed from ZnO-based homojunction LEDs, where it is attributed to donor–acceptor pair recombination in the p-type ZnO layer [10] and also from n-ZnO/p-GaN

Surface-enhanced Raman scattering by colloidal CdSe nanocrystal submonolayers fabricated by the Langmuir–Blodgett technique

• Alexander G. Milekhin,
• Larisa L. Sveshnikova,
• Tatyana A. Duda,
• Ekaterina E. Rodyakina,
• Volodymyr M. Dzhagan,
• Ovidiu D. Gordan,
• Sergey L. Veber,
• Cameliu Himcinschi,
• Alexander V. Latyshev and
• Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2015, 6, 2388–2395, doi:10.3762/bjnano.6.245

• CdS [17][18], CdTe [19], CdSe [20][21][22][23][24], ZnO [25][26][27][28], GaN [26], and CuxS [29][30], reveal the SERS effect by optical phonons when placed in close proximity of Au or Ag nanoclusters. Among those, CdSe NCs have attracted much attention for SERS experiments for at least two reasons

Combination of surface- and interference-enhanced Raman scattering by CuS nanocrystals on nanopatterned Au structures

• Alexander G. Milekhin,
• Nikolay A. Yeryukov,
• Larisa L. Sveshnikova,
• Tatyana A. Duda,
• Ekaterina E. Rodyakina,
• Victor A. Gridchin,
• Evgeniya S. Sheremet and
• Dietrich R. T. Zahn

Beilstein J. Nanotechnol. 2015, 6, 749–754, doi:10.3762/bjnano.6.77

• scattering by LO phonons in epitaxial GaN and ZnO NC thin films covered with Ag was also explained by SERS [9]. A pronounced 104-fold SERS enhancement by surface optical phonons was observed for ZnO NCs excited in resonance with localised surface plasmon in Ag nanoclusters deposited on ZnO NCs and out of the

Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111)

• D. J. Lockwood,
• N. L. Rowell,
• A. Benkouider,
• A. Ronda,
• L. Favre and
• I. Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2498–2504, doi:10.3762/bjnano.5.259

• 25 K) using a Bomem DA3 FTIR spectrometer equipped with a cooled Ge (Applied Detector Corporation) detector, and the samples were excited with loosely-focused light from a GaN-based semiconductor laser (70 mW at 405 nm) or from an argon ion laser (35 mW at 458 nm). Results and Discussion The PL

Nanometer-resolved mechanical properties around GaN crystal surface steps

• Jörg Buchwald,
• Marina Sarmanova,
• Bernd Rauschenbach and
• Stefan G. Mayr

Beilstein J. Nanotechnol. 2014, 5, 2164–2170, doi:10.3762/bjnano.5.225

• these effects, while avoiding artifacts caused by the measurement technique itself. We performed a molecular dynamics study to investigate the mechanical properties of a GaN step of only a few lattice constants step height and scrutinized its applicability to indentation experiments using a finite

• more advanced surface features, including steps, are unclear at this point. The present work addresses the mechanical behavior around a gallium nitride (GaN) step employing a combination of classical molecular dynamics (MD) simulations with a finite element (FEM) approach and CR-AFM experiments. GaN is

• a material of great interest due to its application as a wide-band-gap semiconductor especially for optoelectronic devices [7][8]. Additionally, it is known that GaN can exhibit terraces ranging from monoatomic to a few lattice parameters in step height [9][10]. In principle, the results of this

A nanometric cushion for enhancing scratch and wear resistance of hard films

• Katya Gotlib-Vainshtein,
• Olga Girshevitz,
• Chaim N. Sukenik,
• David Barlam and
• Sidney R. Cohen

Beilstein J. Nanotechnol. 2014, 5, 1005–1015, doi:10.3762/bjnano.5.114

• Katya Gotlib-Vainshtein Olga Girshevitz Chaim N. Sukenik David Barlam Sidney R. Cohen Department of Chemistry and Institute of Nanotechnology & Advanced Materials, Bar Ilan University, Ramat-Gan 52900, Israel Department of Mechanical Engineering, Ben Gurion University, Beer Sheva, Israel

Growth and characterization of CNT–TiO₂ heterostructures

• Yucheng Zhang,
• Ivo Utke,
• Johann Michler,
• Gabriele Ilari,
• Marta D. Rossell and
• Rolf Erni

Beilstein J. Nanotechnol. 2014, 5, 946–955, doi:10.3762/bjnano.5.108

• illustration of the principle in STEM-EELS: (a) the microscope configuration in the STEM mode; (b) the inelastic scattering processes in the TEM sample contributing to the low-loss and the core-loss EELS signals; (c) an atomic-resolution STEM-HAADF image of a GaN–Ge interface; (d) a EELS core-loss spectrum

An ultrasonic technology for production of antibacterial nanomaterials and their coating on textiles

• Anna V. Abramova,
• Vladimir O. Abramov,
• Aharon Gedanken,
• Ilana Perelshtein and
• Vadim M. Bayazitov

Beilstein J. Nanotechnol. 2014, 5, 532–536, doi:10.3762/bjnano.5.62

• Anna V. Abramova Vladimir O. Abramov Aharon Gedanken Ilana Perelshtein Vadim M. Bayazitov Institute of general and inorganic chemistry of the Russian Academy of Sciences, Leninskiy prospect 31, Moscow, 119991, Russian Federation Department of Chemistry, Bar Ilan University, Ramat-Gan, 52900

Challenges in realizing ultraflat materials surfaces

• Takashi Yatsui,
• Wataru Nomura,
• Fabrice Stehlin,
• Olivier Soppera,
• Makoto Naruse and
• Motoichi Ohtsu

Beilstein J. Nanotechnol. 2013, 4, 875–885, doi:10.3762/bjnano.4.99

• than DPP etching only. DPP etching was also performed on GaN(001) substrates while using Cl2 gas at a pressure of 200 Pa. A 532 nm light (2.33 eV, CW laser, power density of 0.28 W·cm−2) was used for this photochemical etching, because Ed of Cl2 is 3.10 eV (which corresponds to a wavelength of 400 nm

• ) [39]. The low power density also prevented any multiphoton excitation associated with irradiation from ultrashort-pulse lasers. The AFM images taken before (Figure 3a) and after 30 min (Figure 3b) of etching show that Ra decreased from 0.23 to 0.14 nm. GaN is a compound semiconductor, so the Ra value

• of 0.140 nm obtained for GaN might be limited by the value of the interatomic distance between Ga and N of 0.195 nm for hexagonal GaN [40]. Furthermore, R(l) again shows the individual contributions of the surface roughness at different length scales to the overall surface roughness, as shown in

High-resolution electrical and chemical characterization of nm-scale organic and inorganic devices

• Pierre Eyben

Beilstein J. Nanotechnol. 2013, 4, 318–319, doi:10.3762/bjnano.4.35

• technology has exhibited some fundamental limitations in tackling the increasingly challenging issues of miniaturization and improvements in processing speed and power consumption. Hence, new inorganic semiconductor materials (Ge, InGaAs, InP, InSb, GaN, GaSb, SiC, etc.) and new architectures (multiple-gate

Photoresponse from single upright-standing ZnO nanorods explored by photoconductive AFM

• Igor Beinik,
• Markus Kratzer,
• Astrid Wachauer,
• Lin Wang,
• Yuri P. Piryatinski,
• Gerhard Brauer,
• Xin Yi Chen,
• Yuk Fan Hsu,
• Aleksandra B. Djurišić and
• Christian Teichert

Beilstein J. Nanotechnol. 2013, 4, 208–217, doi:10.3762/bjnano.4.21

• feature of wide-band-gap semiconductors, such as ZnO, GaN, etc., is the presence of deep levels in the forbidden gap. The appearance of such levels as well as the density of electronic states associated with them depends on the number of defects within a semiconductor and is determined very often by the

Forming nanoparticles of water-soluble ionic molecules and embedding them into polymer and glass substrates

• Stella Kiel,
• Olga Grinberg,
• Nina Perkas,
• Jerome Charmet,
• Herbert Kepner and
• Aharon Gedanken

Beilstein J. Nanotechnol. 2012, 3, 267–276, doi:10.3762/bjnano.3.30

• Stella Kiel Olga Grinberg Nina Perkas Jerome Charmet Herbert Kepner Aharon Gedanken Department of Chemistry, Kanbar Laboratory for Nanomaterials, Nanotechnology Research Center, Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan, 52900, Israel HES-SO Arc, Institut