Changes of structural, magnetic and spectroscopic properties of microencapsulated iron sucrose nanoparticles in saline

• Sabina Lewińska,
• Pavlo Aleshkevych,
• Roman Minikayev,
• Anna Bajorek,
• Mateusz Dulski,
• Krystian Prusik,
• Tomasz Wojciechowski and
• Anna Ślawska-Waniewska

Beilstein J. Nanotechnol. 2025, 16, 762–784, doi:10.3762/bjnano.16.59

•  3d confirms the presence, in addition to iron, of elements from additives and organic compounds, such as Si from SiO2, Ca from calcium alginate, and Co most likely from cobalamin. The Na and Cl peaks relating to salt (NaCl), and peaks of P, S, Ni, and Zn (trace levels), were classified as

• 1s and Si 2p. In the spectrum of the FS0 sample, there was also a small amount <1% of N 1s, Fe 2p, and Ca 2p states, and a trace of Na 1s states. Performed sample dissolution caused the spectrum to be dominated by C 1s, the contribution of Fe 2p and Na 1s states increased, and the Si 2p states

• , as it is predicted in the literature of iron oxide minerals [87][88][93][94]. In addition, the XPS measurements, as a very powerful and sensitive method, confirmed the trace of Si ions in the composition of the samples. Obtained Si 2p spectra are in Figure 12b, while the peak binding energies

Thickness dependent oxidation in CrCl₃: a scanning X-ray photoemission and Kelvin probe microscopies study

• Shafaq Kazim,
• Rahul Parmar,
• Maryam Azizinia,
• Matteo Amati,
• Muhammad Rauf,
• Andrea Di Cicco,
• Seyed Javid Rezvani,
• Dario Mastrippolito,
• Luca Ottaviano,
• Tomasz Klimczuk,
• Luca Gregoratti and
• Roberto Gunnella

Beilstein J. Nanotechnol. 2025, 16, 749–761, doi:10.3762/bjnano.16.58

• known that 270 nm SiO2/Si substrates provide the highest optical contrast (O.C.) value for a single layer or few layers of CrCl3 [2][11]. Because of the insulating behavior of 270 nm SiO2 and to avoid surface charging, we utilized Si(001) wafers with a 1 nm layer of SiO2 and ITO films (190 nm) on glass

• substrates for SPEM investigations. In contrast, 285 nm SiO2/Si and ITO (190 nm) on glass substrates were used for surface potential studies. On native Si substrates, the optical contrast was insufficient to visualize thin flakes. We were unable to observe flakes with thicknesses smaller than 10 nm using the

• optical microscope. Therefore, we opted for an alternative substrate, indium tin oxide (ITO), to conduct the SPEM measurements on thinner layers. Figure 1 gives a direct comparison of AFM images and O.C. on the 1 nm SiO2/Si substrate. Optical contrast, AFM image, and a complete series of profiles showing

Efficiency of single-pulse laser fragmentation of organic nutraceutical dispersions in a circular jet flow-through reactor

• Tina Friedenauer,
• Maximilian Spellauge,
• Alexander Sommereyns,
• Verena Labenski,
• Tuba Esatbeyoglu,
• Christoph Rehbock,
• Heinz P. Huber and
• Stephan Barcikowski

Beilstein J. Nanotechnol. 2025, 16, 711–727, doi:10.3762/bjnano.16.55

Nanostructured materials characterized by scanning photoelectron spectromicroscopy

• Matteo Amati,
• Alexey S. Shkvarin,
• Alexander I. Merentsov,
• Alexander N. Titov,
• María Taeño,
• David Maestre,
• Sarah R. McKibbin,
• Zygmunt Milosz,
• Ana Cremades,
• Rainer Timm and
• Luca Gregoratti

Beilstein J. Nanotechnol. 2025, 16, 700–710, doi:10.3762/bjnano.16.54

• , optoelectronic, or photovoltaic devices, as they combine a direct bandgap of tunable size with high charge carrier mobility [20]. Furthermore, they can be grown on Si substrates [21][22], which enables integration with a well-established technology platform and constrains the use of high performance, but

• few nanometers along the entire nanowire. For operando SPEM measurements, nanowires were transferred onto a prepatterned device template with flat, individually contacted Au/Ti electrodes deposited onto a SiO2/Si substrate, separated by a 1.5 µm wide insulating gap. Optical microscopy images of the

Nanoscale capacitance spectroscopy based on multifrequency electrostatic force microscopy

• Pascal N. Rohrbeck,
• Lukas D. Cavar,
• Franjo Weber,
• Peter G. Reichel,
• Mara Niebling and
• Stefan A. L. Weber

Beilstein J. Nanotechnol. 2025, 16, 637–651, doi:10.3762/bjnano.16.49

• locations on the microcapacitor sample. The first spectrum was recorded on one of the microcapacitors (C3, see Figure 2). Then, we measured in one of the FIB-etched trenches around the capacitors. Here, we assume that the bare silicon surface is covered by a thin native oxide layer (Si). Last, we measured

• + ions into the SiO2 layer. The C″ signal of the bare Si was stable over the whole range of excitation frequencies and only dropped at a much higher frequency around 24 MHz (see Figure S5, Supporting Information File 1). The dielectric response of the undefined particle was significantly lower compared

• increase of sample permittivity [95][96]. We measured a CPD difference between Si and F14H20 of −0.72 ± 0.08 V (see Figure S15, Supporting Information File 1), which is close to the literature value of −0.8 V [97]. Interestingly, the image of the C′ signal (Figure 7c,e) showed a more blurry structure

Focused ion and electron beams for synthesis and characterization of nanomaterials

• Aleksandra Szkudlarek

Beilstein J. Nanotechnol. 2025, 16, 613–616, doi:10.3762/bjnano.16.47

• ion beam interactions [15]. In addition, the extension of the continuum model has proven useful in predicting the outcomes of ion beam milling processes in multilayered systems, as demonstrated in the case of the Si/SiO2/Pt system [16]. To identify the current state of the technology and routes

Feasibility analysis of carbon nanofiber synthesis and morphology control using a LPG premixed flame

• Iftikhar Rahman Bishal,
• Muhammad Hilmi Ibrahim,
• Norikhwan Hamzah,
• Mohd Zamri Mohd Yusop,
• Faizuan Bin Abdullah,
• I Putu Tedy Indrayana and
• Mohd Fairus Mohd Yasin

Beilstein J. Nanotechnol. 2025, 16, 581–590, doi:10.3762/bjnano.16.45

• at 1607 cm−1 and a few broad peaks, indicating less graphitization [14]. In another work, a high-density inductively coupled plasma chemical vapor deposition method yielded vertically aligned CNFs using acetylene and hydrogen on a p-type Si wafer with a 10 nm Ni catalyst layer at 20 mTorr and 550 °C

Retrieval of B1 phase from high-pressure B2 phase for CdO nanoparticles by electronic excitations in Cd_xZn_1−xO composite thin films

• Arkaprava Das,
• Marcin Zając and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2025, 16, 551–560, doi:10.3762/bjnano.16.43

• oxygen ion irradiation, while it entirely disappears with silver ion irradiation, confirming the amorphization of the Zn2SiO4 phase. Complementary observations from X-ray photoelectron spectroscopy (XPS), specifically O 1s and Si 2p peaks in XPS spectra, support these findings. Additionally, the track

• irradiated thin films was performed with X-ray diffraction and Raman spectroscopy. Additionally, X-ray absorption near-edge structure (XANES) spectroscopy was conducted at the Zn L3,2 and O K edges for all the thin films. X-ray photoelectron spectroscopy (XPS) on Si 2p and O 1s core levels provided direct

• the presence of the B2 phase. In the Zn L3,2 edge (inset of Figure 4b), the B1 feature is magnified, clearly illustrating the changes in the B1 feature corresponding to the willemite Zn2SiO4 phase across all three thin films. Influence of irradiation on Zn2SiO4 phase from Si 2p XPS spectra Figure 5a–d

Electron beam-based direct writing of nanostructures using a palladium β-ketoesterate complex

• Chinmai Sai Jureddy,
• Krzysztof Maćkosz,
• Aleksandra Butrymowicz-Kubiak,
• Iwona B. Szymańska,
• Patrik Hoffmann and
• Ivo Utke

Beilstein J. Nanotechnol. 2025, 16, 530–539, doi:10.3762/bjnano.16.41

• following the method outlined by Butrymowicz and colleagues [42]. FEBID was performed using a Hitachi S3600 scanning electron microscope (SEM), which features a high-vacuum chamber and a tungsten filament electron source. Native-oxide Si(100) was employed as a substrate, which was thoroughly cleaned with

• duration. A 20 keV electron beam was used with a probe current of 0.7 nA, as measured on a Faraday cup using a Keithley picoamperemeter. This corresponds to a current of 0.5 nA on the native-oxide Si(100) substrate, with the remaining 0.2 nA attributed to BSEs and SEs emitted from the substrate. The

• these k-ratios, Stratagem then recalculates the composition for a thin film (multi)layered structure. The native-oxide Si(100) substrate was accounted for by including a 1 nm thick SiO2 layer of density 2.65 g·cm−3 between the Si substrate and the deposit for the thin film correction. This way, the

Zeolite materials with Ni and Co: synthesis and catalytic potential in the selective hydrogenation of citral

• Inocente Rodríguez-Iznaga,
• Yailen Costa Marrero,
• Tania Farias Piñeira,
• Céline Fontaine,
• Lexane Paget,
• Beatriz Concepción Rosabal,
• Arbelio Penton Madrigal,
• Vitalii Petranovskii and
• Gwendoline Lafaye

Beilstein J. Nanotechnol. 2025, 16, 520–529, doi:10.3762/bjnano.16.40

• elements, as well as the Si/Al ratios for the obtained materials are shown in Table 1 and/or Figure 3. The Si/Al ratio shows no significant change (Table 1), indicating a high degree of stability for the clinoptilolite–heulandite and mordenite phases after the applied hydrothermal treatments. Additionally

• Imp. TPR profiles for the mono- and bimetallic materials obtained by (a) Imp and (b) IE. Main pathways of citral hydrogenation. Citral hydrogenation results on the mono- and bimetallic catalyst materials obtained by IE and Imp. Cobalt and nickel contents and Si/Al ratio values for the materials

N₂⁺-implantation-induced tailoring of structural, morphological, optical, and electrical characteristics of sputtered molybdenum thin films

• Usha Rani,
• Kafi Devi,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 495–509, doi:10.3762/bjnano.16.38

• remarkable thermal stability, high melting point, and chemical inertness. In the present study, Mo thin films of different thicknesses (150, 200, 250, and 300 nm) have been deposited on Si(100) substrates via radio frequency sputtering in an argon atmosphere at room temperature. Some of these films have been

• for various applications in photovoltaics, sensors, optoelectronics, and electronic devices. In the present work, Mo thin films with varying thickness of 150, 200, 250, and 300 nm were deposited on Si(100) substrates using radio frequency (RF) sputtering in an argon environment at ambient temperature

• this study, molybdenum thin films of varying thickness were deposited at room temperature on Si(100) substrates via RF sputtering using a pure 2″ diameter Mo target (99.99% purity) in Ar gas atmosphere with a flow rate of 10 sccm. The plasma was obtained by setting the RF power to 100 W, while careful

Performance optimization of a microwave-coupled plasma-based ultralow-energy ECR ion source for silicon nanostructuring

• Joy Mukherjee,
• Safiul Alam Mollick,
• Tanmoy Basu and
• Tapobrata Som

Beilstein J. Nanotechnol. 2025, 16, 484–494, doi:10.3762/bjnano.16.37

• power, and extraction grid voltage is documented for different ion energies. Additionally, the manuscript establishes the relationship between ion beam current and ion energy. Irradiation of p-type single crystal Si(100) surfaces at off-normal angles (60° and 72.5°) with 450 eV Ar ions results in the

• current with the target position, known as the beam profile, is also presented in Figure 4e. The beam profile is Gaussian for concave grid beam extraction optics. Nanostructuring on Si surface by 450 eV Ar-ion bombardment The morphological evolution of Si after the off-normal bombardment with 450 eV Ar

• ions at different incidence angles and for various irradiation times is investigated using AFM in tapping mode. Si cantilevers with tip radii of 10 nm were employed, with scan rate of 1 µm/s and a fixed scan size of 5 µm × 5 µm. Quantitative analysis of the surface topography was conducted using WSxM

Impact of adsorbate–substrate interaction on nanostructured thin films growth during low-pressure condensation

• Alina V. Dvornichenko,
• Vasyl O. Kharchenko and
• Dmitrii O. Kharchenko

Beilstein J. Nanotechnol. 2025, 16, 473–483, doi:10.3762/bjnano.16.36

• were observed for Si/Si(100) [13], as well as during Ge deposition on Si [14]. Additionally, elongated metallic islands were detected during the deposition of Cu on Pd(110) [15] and Ag on Cu(110) [16]. Small separated adsorbate islands of Al and Cu condensates were obtained on glass substrates [17][18

• , even for monoatomic layers [34]. The patterns may serve as templates for the later evolution of film textures. Relevant examples of such systems are Al or Cu layers deposited on Si substrates, or SiO2 and TiN layers deposited on Ti or Al substrates [31]. In this article, we perform a computational

Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature

• Kafi Devi,
• Usha Rani,
• Arun Kumar,
• Divya Gupta and
• Sanjeev Aggarwal

Beilstein J. Nanotechnol. 2025, 16, 333–348, doi:10.3762/bjnano.16.25

• used for this purpose. However, the requirement of very pure material for making these devices leads to high production cost. Metal chalcogenide-based solar cells, because of their low cost and comparable efficiency, can act as a substitute for the Si-based technology. Metal chalcogenide (II–VI

Radiosensitizing properties of dual-functionalized carbon nanostructures loaded with temozolomide

• Radmila Milenkovska,
• Nikola Geskovski,
• Dushko Shalabalija,
• Ljubica Mihailova,
• Petre Makreski,
• Dushko Lukarski,
• Igor Stojkovski,
• Maja Simonoska Crcarevska and
• Kristina Mladenovska

Beilstein J. Nanotechnol. 2025, 16, 229–251, doi:10.3762/bjnano.16.18

Synthesis and the impact of hydroxyapatite nanoparticles on the viability and activity of rhizobacteria

• Bedah Rupaedah,
• Indrika Novella,
• Atiek Rostika Noviyanti,
• Diana Rakhmawaty Eddy,
• Anna Safarrida,
• Abdul Hapid,
• Zhafira Amila Haqqa,
• Suryana Suryana,
• Irwan Kurnia and
• Fathiyah Inayatirrahmi

Beilstein J. Nanotechnol. 2025, 16, 216–228, doi:10.3762/bjnano.16.17

• clear zone (halo) and the bacterial colony. The solubilizing index (SI) was then calculated using the formula: SI = (colony diameter + clear zone diameter)/colony diameter. Assessment of nitrogen-fixing activity of rhizobacteria-nHA The nitrogen-fixing ability of rhizobacteria was assessed qualitatively

• composition of the Pd-nHA sample. Elemental composition of the Tb-nHA sample. Solubilizing index (SI) of rhizobacteria loaded onto the nHA carrier. Nitrogen-fixing activity of rhizobacteria loaded onto the carrier.a Supporting Information Supporting Information File 16: Activity tests of Pd and Tb

Clays enhanced with niobium: potential in wastewater treatment and reuse as pigment with antibacterial activity

• Silvia Jaerger,
• Patricia Appelt,
• Mario Antônio Alves da Cunha,
• Fabián Ccahuana Ayma,
• Ricardo Schneider,
• Carla Bittencourt and
• Fauze Jacó Anaissi

Beilstein J. Nanotechnol. 2025, 16, 141–154, doi:10.3762/bjnano.16.13

• angular deformation of the water molecule, respectively [7][17]. The band in the region of approximately 1115 cm−1 is related to the stretching vibrations of Si–O. Bands in the region of 520 and 463 cm−1, which appear in all spectra of bentonite and bentonite modified with niobium, are attributed to the

• stretching and bending of Si–O present in the clay layers [7]. The spectra for Nb2O5 and NbOPO4 and the bentonite modified with niobium before and after adsorption/photocatalysis present an intense band in the region of 630 cm−1 related to the stretching of the Nb–O bond. The A-BEPh, A-BEPhP, A-BEOx, and A

• at 530.9 and 533.5 eV. The component centered at 531.0 eV can be attributed to photoelectrons emitted from oxygen atoms in Si–O, Al–O, or Nb–O bonds, whereas the low-intensity component at a higher binding energy can be associated with the hydroxyl OH− group of Nb–OH located in the interlayer region

TiO₂ immobilized on 2D mordenite: effect of hydrolysis conditions on structural, textural, and optical characteristics of the nanocomposites

• Marina G. Shelyapina,
• Rosario Isidro Yocupicio-Gaxiola,
• Gleb A. Valkovsky and
• Vitalii Petranovskii

Beilstein J. Nanotechnol. 2025, 16, 128–140, doi:10.3762/bjnano.16.12

• mesoporosity after calcination due to anatase nanoparticles of about 4 nm preventing the collapse of the interlamellar space. Immobilization of TiO2 on the zeolite surface is evidenced by the formation of Si–O–Ti bonds. The bandgap width of the synthetized nanocomposites was found to be sensitive to the

• that direct synthesis of TiO2 in mesoporous silica or zeolites provides strong immobilization of TiO2 nanoparticles through Ti–O–Si bonding [21][22][23]. Previously, we reported the results of the trial synthesis of a new TiO2/2D mordenite nanocomposite [28]. The material was obtained from a composite

• most important chemical property. For various reasons, the sol–gel method is mainly associated with the hydrolysis of Si(OR)4; this reagent is readily available, inexpensive, and its hydrolysis proceeds relatively smoothly, as discussed in numerous original papers and reviews [29]. However, the

Theoretical study of the electronic and optical properties of a composite formed by the zeolite NaA and a magnetite cluster

• Joel Antúnez-García,
• Roberto Núñez-González,
• Vitalii Petranovskii,
• H’Linh Hmok,
• Armando Reyes-Serrato,
• Fabian N. Murrieta-Rico,
• Mufei Xiao and
• Jonathan Zamora

Beilstein J. Nanotechnol. 2025, 16, 44–53, doi:10.3762/bjnano.16.5

• characteristics of zeolites depend largely on the chemical composition of the framework, specifically the Si/Al ratio [1][2]. These characteristics make zeolites highly appealing for a wide range of applications, including the production of fine chemicals [3][4], gas separation [5][6][7], ion exchange [8][9][10

• magnetic materials. Computational Details In the current study, the dehydrated sodium LTA zeolite, commonly denoted as NaA in the literature, with a ratio of Si/Al = 1 was considered. For this purpose, we adopted the trigonal cell proposed by Antúnez-García et al. [54], for which the lattice parameters are

• magnitude of the largest vector in charge density Fourier expansion is Gmax = 12.0. The energy to separate the valence states of the core states was set at a value of −7.5 Ry; thus, the Al [1s2 2s2], O [1s2], Si [1s2 2s2], Na [1s2], and Fe [1s2 2s2 2p6] electronic states are considered as core states, and

Precursor sticking coefficient determination from indented deposits fabricated by electron beam induced deposition

• Alexander Kuprava and
• Michael Huth

Beilstein J. Nanotechnol. 2025, 16, 35–43, doi:10.3762/bjnano.16.4

• itself once the first closed layer is formed. In another series of surface-science-oriented works, the sticking coefficient has been studied for small organic molecules, such as allyl methyl ether on Si(100) [17], trimethylamine on Si(001) [18], tetrahydrofuran on Si(001) [19], and benzene on Pt(111) [20

• dynamics of larger precursor molecules. Methods A dual-beam microscope Nova 600 (FEI Company, the Netherlands) at Goethe University Frankfurt was used for the nanofabrication process. Structures were deposited on a 500 nm thick Au surface on top of a SiO2-terminated Si substrate in order to prevent

Fabrication of hafnium-based nanoparticles and nanostructures using picosecond laser ablation

• Abhishek Das,
• Mangababu Akkanaboina,
• Jagannath Rathod,
• R. Sai Prasad Goud,
• Kanaka Ravi Kumar,
• Raghu C. Reddy,
• Ratheesh Ravendran,
• Katia Vutova,
• S. V. S. Nageswara Rao and
• Venugopal Rao Soma

Beilstein J. Nanotechnol. 2024, 15, 1639–1653, doi:10.3762/bjnano.15.129

• techniques The synthesised NPs were drop-cast on carbon-coated copper grids to record transmission electron microscopy (TEM) images and selected area electron diffraction (SAED) patterns using a FEI Tecnai G2 S-Twin operating at 200 kV. Further, these NPs were drop-cast on cleaned Si substrates, and their

• . The high fraction of C indicates the formation of the graphitic shell around HfC NPs in both toluene and anisole. Figure 8 shows the reflectance data of a pristine Si substrate compared to a Si substrate coated with HfNPs-D, HfNPs-T, and HfNPs-A under three different angles of incidence (30°, 45°, and

• 60°) taken in the wavelength range from 250 to 1200 nm. The black curve corresponds to the reflectance spectrum of the reference pristine Si sample; the red curve is HfNPs-T, the blue curve is HfNPs-A, and the green curve is HfNPs-D. The values of the reflectance and reduction in the UV (λ = 250 nm

Heterogeneous reactions in a HFCVD reactor: simulation using a 2D model

• Xochitl Aleyda Morán Martínez,
• José Alberto Luna López,
• Zaira Jocelyn Hernández Simón,
• Gabriel Omar Mendoza Conde,
• José Álvaro David Hernández de Luz and
• Godofredo García Salgado

Beilstein J. Nanotechnol. 2024, 15, 1627–1638, doi:10.3762/bjnano.15.128

• ratio x = [O]/[Si], which is determined by controlling key parameters in the deposition process [2]. This ratio determines optical and electrical properties such as bandgap energy, absorption coefficient, photoluminescence, refractive index, and electrical conductivity [3]. SiOx cannot only be obtained

• , OH, H2O, and O2; those with lower concentrations were SiH4, SiH, Si, O, Si2, and Si3 [24]. This study was the basis for establishing the four main chemical reactions in zone 2 in the HFCVD reactor, which are listed below in Table 3. Here, an additional thermochemical study of the reaction SiO2 (s

• increases with the flux of H2. This effect was already studied experimentally, and the most significant results were the analysis of how the hydrogen flow influences the composition SiOx films by X-ray photoelectron spectroscopy; as the hydrogen flow increases, the concentration of Si also increases in

Ion-induced surface reactions and deposition from Pt(CO)₂Cl₂ and Pt(CO)₂Br₂

• Mohammed K. Abdel-Rahman,
• Patrick M. Eckhert,
• Atul Chaudhary,
• Johnathon M. Johnson,
• Jo-Chi Yu,
• Lisa McElwee-White and
• D. Howard Fairbrother

Beilstein J. Nanotechnol. 2024, 15, 1427–1439, doi:10.3762/bjnano.15.115

• occurs at ≈1 mC/cm2 in Figure 5. Figure 6 and Figure S5 (Supporting Information File 1) show the results of experiments where a Si substrate was exposed to a constant partial pressure of Pt(CO)2Cl2 and a steady Ar+ flux of 5 nA at an incident energy of 800 eV. These conditions represent a situation that

• a separate UHV chamber equipped with a Stanford Research Instruments RGA200 quadrupole mass spectrometer and a PHI 04-303 ion gun. The base pressure of this chamber was 2.9 × 10−9 Torr. Si substrates (20 × 20 mm, Ted Pella, Inc.) were cleaned by sonication in acetone, then isopropanol, and finally

Various CVD-grown ZnO nanostructures for nanodevices and interdisciplinary applications

• The-Long Phan,
• Le Viet Cuong,
• Vu Dinh Lam and
• Ngoc Toan Dang

Beilstein J. Nanotechnol. 2024, 15, 1390–1399, doi:10.3762/bjnano.15.112

• prepare ZnO nanostructures. A commercial Zn powder was used as the starting material (a vapour source) which was loaded in a ceramic bath. Clean Au-coated Si(001) substrates were arranged upstream on an alumina plate that was placed on the bath, nearby the vapour source. This system was placed in the

• down to collect white products formed on Si substrates. They were characterized by scanning electron microscopy (SEM, JEOL-6330F) and energy-dispersive X-ray (EDX) spectroscopy. Renishaw’s RS and PL spectrometers operating with laser wavelengths of 488 and 325 nm were also employed to study phonon

• vibrational and emission spectra, respectively, of typical nanostructures. Results and Discussion We performed multiple experiments of growth of nanostructured ZnO materials by CVD under temperature and gas conditions as aforementioned described. After each growth, we obtained white products deposited on Si

A biomimetic approach towards a universal slippery liquid infused surface coating

• Ryan A. Faase,
• Madeleine H. Hummel,
• AnneMarie V. Hasbrook,
• Andrew P. Carpenter and
• Joe E. Baio

Beilstein J. Nanotechnol. 2024, 15, 1376–1389, doi:10.3762/bjnano.15.111

• a 1:1 mixture of ethanol and acetone for 30 min. Si substrates were fabricated via a diamond-tipped blade in a Disco wafer saw (Disco, Tokyo, Japan) from a silicon wafer cut into 1 × 1 cm2 substrates. These Si substrates were left overnight to soak in DI water and then sonicated in 20 min intervals

• were (89.3 ± 3.7)° for bare COC, (62.2 ± 1.9)° for Si, and (66.8 ± 2.5)° for SS (Figure 2), all of which were consistent with what was expected [38][39][40][41]. The experimental contact angles for substrates following the next functionalization step, the addition of PDA, were (43.3 ± 2.5)° for COC

• , (39.6 ± 2.1)° for Si, and (43.4 ± 4.7)° for SS, which was also in agreement with other values reported for PDA-coated substrates [19]. The final layer of the coating involved covalently attaching the fluorinated thiol, FDT, to the newly formed PDA film. The reported values for the final layer are (127.6