Electrostatic pull-in application in flexible devices: A review

• Teng Cai,
• Yuming Fang,
• Yingli Fang,
• Ruozhou Li,
• Ying Yu and
• Mingyang Huang

Beilstein J. Nanotechnol. 2022, 13, 390–403, doi:10.3762/bjnano.13.32

• . Electrode materials include diamond, SiC, Si, and Ge. Table 3 summarizes nanowire materials commonly used for NEM switches. The research on NWs-NEM switches can be classified into two types, namely manufacturing techniques and in situ techniques. In the former, the switches are first processed by top-down

• et al. [8] made a CuO NWs switch, 3 µm long, 80 nm in diameter, and 120 nm in the gap, with a pull-in voltage of 12.5 V. Feng et al. [40] prepared SiC nanowire NEM switches using bottom-up techniques. The pull-in voltage ranges from one to several volts and the response time is below microseconds

• for resonance detection of a GeSn alloy. Meija et al. [42] proposed the technique of using resonance aid to reduce the pull-in voltage of Ge0.91Sn0.09 NWs. By applying 610.8 kHz and 0.45 V AC voltage to a GeSn alloy nanowire, the pull-in voltage can be reduced from 13.8 to 5 V. This method can

Plasma modes in capacitively coupled superconducting nanowires

• Alex Latyshev,
• Andrew G. Semenov and
• Andrei D. Zaikin

Beilstein J. Nanotechnol. 2022, 13, 292–297, doi:10.3762/bjnano.13.24

• elsewhere. The system of two capacitively coupled superconducting nanowires. Time-dependent phase configurations describing a QPS event at t = 0 (red) and t > 0 (blue) together with propagating voltage pulses generated by this QPS event in a single superconducting nanowire. The same as in Figure 1 in the

Impact of device design on the electronic and optoelectronic properties of integrated Ru-terpyridine complexes

• Max Mennicken,
• Sophia Katharina Peter,
• Corinna Kaulen,
• Ulrich Simon and
• Silvia Karthäuser

Beilstein J. Nanotechnol. 2022, 13, 219–229, doi:10.3762/bjnano.13.16

• conductance value characteristic for long supramolecular wires. These nanowire devices are compared to well-accessible devices based on a few Ru(MPTP)2–AuNP building blocks with a diameter of 12.9 ± 1.6 nm immobilized between nanoelectrode pairs with gap sizes of 20 to 50 nm. Here, the redox-active Ru(MPTP)2

• -complexes form the ligand shell of the AuNPs. In these devices two to four Ru(MPTP)2–AuNP building blocks are needed to bridge the gap between the nanoelectrodes. The AuNP devices have been characterized in the same manner as the nanowire devices. The thus determined conductance values are 12.8, 16.3, and

• 28.9 pS. These values are higher, by roughly a factor of ten, than the conductance values obtained for nanowire devices, but three orders of magnitude lower than conductance values obtained for single-AuNP devices, which are typically around 14 ± 3 nS, as reported in [15]. Representative conductance

Topographic signatures and manipulations of Fe atoms, CO molecules and NaCl islands on superconducting Pb(111)

• Carl Drechsel,
• Philipp D’Astolfo,
• Jung-Ching Liu,
• Thilo Glatzel,
• Rémy Pawlak and
• Ernst Meyer

Beilstein J. Nanotechnol. 2022, 13, 1–9, doi:10.3762/bjnano.13.1

• realization of MZMs in two dimensions has been also observed in vortex cores on a proximitized topological insulator surface [19][20], in iron-based superconductors [7][21][22] or hybrid van der Waals heterostructures [23]. The fingerprint for MZMs in conductance measurements through the nanowire or in

Chemical vapor deposition of germanium-rich CrGe_x nanowires

• Vladislav Dřínek,
• Stanislav Tiagulskyi,
• Roman Yatskiv,
• Jan Grym,
• Radek Fajgar,
• Věra Jandová,
• Martin Koštejn and
• Jaroslav Kupčík

Beilstein J. Nanotechnol. 2021, 12, 1365–1371, doi:10.3762/bjnano.12.100

• . The nanowires possessed a complex structure, namely a thin crystalline germanium core and amorphous CrGex coating. The composition of the nanowire coating was [Cr]/[Ge] = 1:(6–7). The resistance of the nanowire–deposit system was estimated to be 2.7 kΩ·cm using an unique vacuum contacting system

• . Keywords: chemical vapor deposition; chromium germanide; nanostructured materials; nanowire; resistivity; Introduction Metal silicides and germanides belong to an extensively studied group of materials offering a wide variety of properties to meet various requirements in battery, optical, and electronic

• , nanowires grew in a tapering manner (Figure 1b and Supporting Information File 1, Figure S2). Linear EDX analysis (Figure 2) and elemental mapping (Supporting Information File 1, Figure S3) of a single nanowire showed that it was composed of Cr, Ge, O (from an oxidized surface) and C (a standard impurity in

Comprehensive review on ultrasound-responsive theranostic nanomaterials: mechanisms, structures and medical applications

• Sepand Tehrani Fateh,
• Lida Moradi,
• Elmira Kohan,
• Michael R. Hamblin and
• Amin Shiralizadeh Dezfuli

Beilstein J. Nanotechnol. 2021, 12, 808–862, doi:10.3762/bjnano.12.64

Recent progress in actuation technologies of micro/nanorobots

• Ke Xu and
• Bing Liu

Beilstein J. Nanotechnol. 2021, 12, 756–765, doi:10.3762/bjnano.12.59

• an electric eel, called nanoeel. It has a smart flexible tail, made of polyvinylidene fluoride copolymer, connected to the head of a polypyrrole nanowire. The head is decorated with a nickel ring for magnetic actuation. When an alternating magnetic field is applied, the magnetic head module (nickel

Recent progress in magnetic applications for micro- and nanorobots

• Ke Xu,
• Shuang Xu and
• Fanan Wei

Beilstein J. Nanotechnol. 2021, 12, 744–755, doi:10.3762/bjnano.12.58

• operating frequency range. Targeted treatment and controlled drug delivery with MNRs have been achieved [74][75]. For locomotion and drug delivery, the same external power sources should be chosen, if possible. Chen et al. [76] proposed a hybrid magnetoelectric nanowire for MNR applications, which could use

• materials. In the presence of an external magnetic field, a piezoresponse force microscope (PFM) could be used to directly probe the ferroelectricity and magnetoelectricity of this nanowire. Experiments were carried out in a specially designed setup with three pairs of orthogonal electromagnetic coils to

Nanogenerator-based self-powered sensors for data collection

• Yicheng Shao,
• Maoliang Shen,
• Yuankai Zhou,
• Xin Cui,
• Lijie Li and
• Yan Zhang

Beilstein J. Nanotechnol. 2021, 12, 680–693, doi:10.3762/bjnano.12.54

• . Lee et al. proposed a based Hg2+ ion sensor based on ZnO nanowires and carbon nanotubes for detecting toxic pollutants [17]. The ZnO nanowire (NW) array acted as power source. When Hg2+ ions were detected, the system powered a light-emitting diode (LED). Li et al. designed a self-powered heavy metal

• to the test gas. The sensitivity of above ZnO-based self-powered sensor is 127.3% under 1000 ppm H2S. The piezoelectric output of sensor decreased with increase of the concentration of the tested gas, as shown in Figure 5e. In 2016, a self-powered gas sensor based on a NiO/ZnO heterojunction nanowire

• flexible nanogenerator as self-powered sensor for transportation monitoring“, pages no. 75–81, Copyright (2012), with permission from Elsevier. Figure 1f was republished from [18] (X. Xue et al., “Surface free-carrier screening effect on the output of a ZnO nanowire nanogenerator and its potential as a

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• into the YBCO thin film and thus be used to define precise sample geometries, without material removal. For example, high-dose irradiation over larger areas leaving a narrow gap in between has been used to define YBCO nanowires, which were then line-irradiated at lower dose to form nanowire-based

• membrane targets by ion implantation. Ion-induced mass transport In one example of a morphological change attributed to ion-induced mass transport, segments of a free-standing GaAs nanowire of 100 nm diameter were irradiated locally with 30 keV helium ions at relatively low dose resulting in local thinning

• the beam energy and current, the growth of single-crystal nanowires was also shown. This is reminiscent of nanowire growth by the vapor–solid–liquid mechanism, except here the process was performed at room temperature and without the flow of a gaseous precursor. In the HIM case it was proposed that

High-yield synthesis of silver nanowires for transparent conducting PET films

• Gul Naz,
• Hafsa Asghar,
• Muhammad Ramzan,
• Muhammad Arshad,
• Rashid Ahmed,
• Muhammad Bilal Tahir,
• Bakhtiar Ul Haq,
• Nadeem Baig and
• Junaid Jalil

Beilstein J. Nanotechnol. 2021, 12, 624–632, doi:10.3762/bjnano.12.51

• synthesis, ethylene glycol was used as a reducing agent in the presence of PVP as capping agent. Silver nitrate and CuCl2 were used as sources of silver and metallic salt, respectively. The resultant nanowires grew 3.3–4.7 µm in length and 75–97 nm in diameter. A silver nanowire ink was then transferred to

• nanowire interactions. Also, the aligned assembly may not only yield reduced PET film roughness and resistance but also improved transmissivity. Here, AgNWs with lengths and diameters of 3.3–4.7 µm and 75–97 nm, respectively, have been formed in the reaction. The AgNWs with larger diameters yield lower

• free from impurities, that is, silver nanoparticles. No other nanostructures could affect the optical and conduction properties, or the roughness of the film. A silver nanowire ink formulated by adding HEC to an aqueous solution of silver nanowires, was then loaded onto the surface of PET films by

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

• Jakub Kierdaszuk,
• Piotr Kaźmierczak,
• Justyna Grzonka,
• Aleksandra Krajewska,
• Aleksandra Przewłoka,
• Wawrzyniec Kaszub,
• Zbigniew R. Zytkiewicz,
• Marta Sobanska,
• Maria Kamińska,
• Andrzej Wysmołek and
• Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

• different nanowire substrates shows that bigger differences in nanowires height increase graphene strain, while a higher number of nanowires in contact with graphene locally reduces the strain. Moreover, the value of graphene carrier concentration is found to be correlated with the density of nanowires in

• graphene on rarely distributed nanowires. Our results also show modification of graphene carrier concentration and strain by different types of defects present in graphene. Therefore, the nanowire substrate is promising not only for strain and carrier concentration engineering but also for defect

• absorption [9]. However, the interaction between corrugated nanowire substrate and graphene could substantially increase the scattering of carriers in a graphene electrode and decrease its conductivity. Therefore, detailed studies of the interaction between nanowire substrate and graphene are crucial to gain

Spontaneous shape transition of Mn_xGe_1−x islands to long nanowires

• S. Javad Rezvani,
• Luc Favre,
• Gabriele Giuli,
• Yiming Wubulikasimu,
• Isabelle Berbezier,
• Augusto Marcelli,
• Luca Boarino and
• Nicola Pinto

Beilstein J. Nanotechnol. 2021, 12, 366–374, doi:10.3762/bjnano.12.30

• start to elongate rapidly and their width approaches the optimal value of s ≃ 80 nm (Figure 7a). We have calculated an island aspect ratio as large as t/s ≃ 17 in our sample. These results confirm the compatibility of the nanowire growth with the strain-induced elongation mechanism, also observed in

A review on the green and sustainable synthesis of silver nanoparticles and one-dimensional silver nanostructures

• Sina Kaabipour and
• Shohreh Hemmati

Beilstein J. Nanotechnol. 2021, 12, 102–136, doi:10.3762/bjnano.12.9

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

• Jianqi Dong,
• Liang Chen,
• Yuqing Yang and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1847–1853, doi:10.3762/bjnano.11.166

• heterojunction (left panel, b1) and HRTEM image of the corresponding GaN layer (right panel, b2). (c) XRD 2θ scan of the epitaxial structure in the region of the (002) reflection. (a) Schematic diagrams after ICP dry etching, (b) during EC wet etching, (c) and of a single nanowire. (d) SEM image of a AlGaN/AlN

Seebeck coefficient of silicon nanowire forests doped by thermal diffusion

• Shaimaa Elyamny,
• Elisabetta Dimaggio and
• Giovanni Pennelli

Beilstein J. Nanotechnol. 2020, 11, 1707–1713, doi:10.3762/bjnano.11.153

• Technological Applications (SRTA-City), New Borg El-Arab City, 21934, Alexandria, Egypt 10.3762/bjnano.11.153 Abstract Thermoelectric generators made by large arrays of nanowires perpendicular to a silicon substrate, that is, so-called silicon nanowire forests are fabricated on large areas by an inexpensive

• metal-assisted etching technique. After fabrication, a thermal diffusion process is used for doping the nanowire forest with phosphorous. A suitable experimental technique has been developed for the measurement of the Seebeck coefficient under static conditions, and results are reported for different

• doping parameters. These results are in good agreement with numerical simulations of the doping process applied to silicon nanowires. These devices, based on doped nanowire forests, offer a possible route for the exploitation of the high power factor of silicon, which, combined with the very low thermal

Piezoelectric sensor based on graphene-doped PVDF nanofibers for sign language translation

• Shuai Yang,
• Xiaojing Cui,
• Rui Guo,
• Zhiyi Zhang,
• Shengbo Sang and
• Hulin Zhang

Beilstein J. Nanotechnol. 2020, 11, 1655–1662, doi:10.3762/bjnano.11.148

• is added under stirring to yield the spinning solution for electrospinning. After preparation of the fibers, an aqueous solution of Ti3C2 MXene and Ag NWs is sprayed on both sides of the material and then dried. Finally, the nanowire membrane is covered on both sides with PDMS to obtain the

A self-powered, flexible ultra-thin Si/ZnO nanowire photodetector as full-spectrum optical sensor and pyroelectric nanogenerator

• Liang Chen,
• Jianqi Dong,
• Miao He and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1623–1630, doi:10.3762/bjnano.11.145

• work, a new type of self-powered, high-performance ultra-thin p-Si/n-ZnO nanowire (NW) flexible photodetector (PD) and its application as full-spectrum optical sensor and pyroelectric nanogenerator (PENG) are demonstrated. The working mechanism of PDs for PENGs is carefully investigated and

Walking energy harvesting and self-powered tracking system based on triboelectric nanogenerators

• Mingliang Yao,
• Guangzhong Xie,
• Qichen Gong and
• Yuanjie Su

Beilstein J. Nanotechnol. 2020, 11, 1590–1595, doi:10.3762/bjnano.11.141

• inductively coupled plasma chamber, at corresponding flow rates of 10.0, 30.0, and 15.0 sccm, respectively. The nanowire structure was obtained on the surface by etching the PTFE film for 15 s. The high-density plasma was generated by a 500 W power source while the plasma ions were triggered by another 160 W

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

• Mathias Franz,
• Romy Junghans,
• Paul Schmitt,
• Adriana Szeghalmi and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

• random structures are typically vertically aligned nanowires, also called nanorods. Silicon nanowire arrays can be designed to have a low reflectance of about 1% in a broad spectral range, depending on their geometry. These silicon structures exhibit efficient light trapping because photons are scattered

• to fabricate high-efficiency solar cells [4][5]. These nanowire-based solar cells show a higher short circuit current and a higher quantum efficiency than planar cells [6]. Another energy conversion application for nanowires is a thermoelectric harvester. The one-dimensional structures reduce heat

• transport and improve the efficiency of the thermoelectric generator [7]. Silicon nanowire arrays are also an emerging anode material for integrated lithium-ion batteries. They have a ten times higher theoretical capacity than graphite and can be used for cells with high energy density. However, these

Superconductor–insulator transition in capacitively coupled superconducting nanowires

• Alex Latyshev,
• Andrew G. Semenov and
• Andrei D. Zaikin

Beilstein J. Nanotechnol. 2020, 11, 1402–1408, doi:10.3762/bjnano.11.124

• voltage in the form of pulses. By applying a bias current the symmetry between positive and negative voltage pulses is broken and, as a result, a superconducting nanowire acquires a non-vanishing electrical resistance down to the lowest temperatures [5][6]. This effect was directly observed in a number of

• those of another one, thereby shifting the QPT in each of the wires in a way to increase the parameter range for the insulating phase. Qualitatively the same effect is expected to occur in a single superconducting nanowire that has the form of a meander frequently used in experiments. Results and

• properties can be investigated in exactly the same manner as was done in [5] in the case of a single nanowire. Generalization of the technique [5] to the case of two capacitively coupled superconducting nanowires is straightforward. For a linear resistance of the ith wire Ri(T) and for λii > 2 (or for any

Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growth

• Owen C. Ernst,
• Felix Lange,
• David Uebel,
• Thomas Teubner and
• Torsten Boeck

Beilstein J. Nanotechnol. 2020, 11, 1371–1380, doi:10.3762/bjnano.11.121

• grow germanium nanowires on different substrates is described. Keywords: dewetting; germanium; interfacial energy; Laplace pressure; nanostructure; nanowire; Ostwald ripening; wetting layer; Introduction Wetting phenomena as well as the formation and movement of droplets are essential for numerous

• can be found in the Experimental section. The resulting free energy leads to different nanodroplets, which changed their catalytic behaviour during nanowire growth. Results and Discussion Theoretical results Gold on silicon oxide Figure 1 shows the first derivative of the free energy with respect to

• germanium was deposited onto Au/Si substrates, germanium nanowires were grown. The in-plane nanowires started to grow at places where the gold droplets had formed previously. The inset shows gold at the top of the germanium nanowire, where continuous homoepitaxial growth was catalysed. A sample with a

3D superconducting hollow nanowires with tailored diameters grown by focused He⁺ beam direct writing

• Rosa Córdoba,
• Alfonso Ibarra,
• Dominique Mailly,
• Isabel Guillamón,
• Hermann Suderow and
• José María De Teresa

Beilstein J. Nanotechnol. 2020, 11, 1198–1206, doi:10.3762/bjnano.11.104

• is present along the whole nanowire length. Moreover, these nanowires become superconducting at 6.8 K and show high values of critical magnetic field and critical current density. Consequently, these 3D nano-objects could be implemented as components in the next generation of electronics, such as

• ion beam current from 1.3 to 7 pA. STEM images of these hollow NWs are shown in Figure 3a. The observed non-uniform shape of the cavity in the central nanowire could be explained by several reasons, such as He+ FIB instability or irregular substrate surface. We find a linear dependence of the inner

Revealing the local crystallinity of single silicon core–shell nanowires using tip-enhanced Raman spectroscopy

• Marius van den Berg,
• Ardeshir Moeinian,
• Arne Kobald,
• Yu-Ting Chen,
• Anke Horneber,
• Steffen Strehle,
• Alfred J. Meixner and
• Dai Zhang

Beilstein J. Nanotechnol. 2020, 11, 1147–1156, doi:10.3762/bjnano.11.99

• electronic functionality of such nanometer-scale building blocks. A rational and well-established synthesis strategy for the creation of complex silicon nanostructures is metal-catalyzed vapor–liquid–solid (VLS) nanowire growth [13]. VLS nanowire growth belongs to the gas-phase synthesis procedures, similar

• to chemical vapor deposition (CVD), and enables direct nanowire growth in a bottom-up manner. The nanowire composition, in particular the doping concentration, can be controlled by an adequate adjustment of the synthesis gas mixture, e.g., by setting the SiH4/B2H6 ratio during the synthesis of boron

• the optical and electronic behavior of nanowire building blocks. Hence, there is an inherent need for non-destructive characterization techniques that are able to elucidate the local crystallinity. Raman spectroscopy is such a type of non-destructive characterization techniques and has become a

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires

• Elena I. Monaico,
• Eduard V. Monaico,
• Veaceslav V. Ursaki,
• Shashank Honnali,
• Vitalie Postolache,
• Karin Leistner,
• Kornelius Nielsch and
• Ion M. Tiginyanu

Beilstein J. Nanotechnol. 2020, 11, 966–975, doi:10.3762/bjnano.11.81

• present work also exhibit a diameter distribution with a certain width. However, we believe that the distribution could be narrowed by further optimization of the technological processes. Note that the diameter of a particular nanowire is determined by the width of the space charge region (SCR) set up

• metal deposition. Note that the nanowire was visible in the optical microscope due to its length of 70 µm, despite the small diameter. The distance between the contacts is 20 µm. A photograph of five contacted nanowires on a glass substrate after Cr/Au deposition and lift-off is presented in the inset

• of the Figure 7A. The photocurrent build-up and relaxation for a photodetector produced on a nanowire with a diameter of 400 nm is presented in Figure 7B for an IR illumination density of 800 mW·cm−2. One can see that the current increases by a factor of four in magnitude under illumination with IR