Organized films

• Maurizio Canepa and
• Helmuth Möhwald

Beilstein J. Nanotechnol. 2016, 7, 406–408, doi:10.3762/bjnano.7.35

• a molecule in a controlled way for electronic and optoelectronic applications. In this respect, defined protein incorporation, for example, for designing a biosensor, seemed hopeless. Incidentally, these problems were largely shared by self-assembled monolayers (SAMs), as exemplified by the most

Transformations of PTCDA structures on rutile TiO₂ induced by thermal annealing and intermolecular forces

• Szymon Godlewski,
• Jakub S. Prauzner-Bechcicki,
• Thilo Glatzel,
• Ernst Meyer and
• Marek Szymoński

Beilstein J. Nanotechnol. 2015, 6, 1498–1507, doi:10.3762/bjnano.6.155

• point of view of optoelectronic applications [17]. In the following, we extend previous research on the PTCDA/TiO2(110)-(1 × 1) system [36]. Godlewski et al. [36] essentially paid attention to the influence of dispersion forces (changed by the density of molecules on the surface) on the formation of the

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

• Jacques Perrin Toinin,
• Alain Portavoce,
• Khalid Hoummada,
• Michaël Texier,
• Maxime Bertoglio,
• Sandrine Bernardini,
• Marco Abbarchi and
• Lee Chow

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

• interesting properties for optoelectronic applications. For example, porous Si was shown to exhibit an increased band gap compared to bulk Si due to quantum (Q) size effects, related either to the formation of pseudo Q-wires or Q-dots in the porous structure, depending on the production method [1]. Generally

Silicon and germanium nanocrystals: properties and characterization

• Ivana Capan,
• Alexandra Carvalho and
• José Coutinho

Beilstein J. Nanotechnol. 2014, 5, 1787–1794, doi:10.3762/bjnano.5.189

• application in areas such as optoelectronic applications and memory devices has been progressively unraveled. Nevertheless, new challenges with no parallel in the respective bulk material counterparts have arisen. In this review, we consider what has been achieved and what are the current limitations with

• deal of attention, due to the promising optoelectronic applications [27]. It has been shown that in order to study the donor doping and dependences of the PL intensity in such systems, it is crucial to understand and control the presence of defects. The effects of donors and defects to the PL of Si NCs

Growth evolution and phase transition from chalcocite to digenite in nanocrystalline copper sulfide: Morphological, optical and electrical properties

• Priscilla Vasthi Quintana-Ramirez,
• Ma. Concepción Arenas-Arrocena,
• José Santos-Cruz,
• Marina Vega-González,
• Omar Martínez-Alvarez,
• Víctor Manuel Castaño-Meneses,
• Laura Susana Acosta-Torres and
• Javier de la Fuente-Hernández

Beilstein J. Nanotechnol. 2014, 5, 1542–1552, doi:10.3762/bjnano.5.166

• structure. All CuxS products could be promising for optoelectronic applications. Keywords: abundant materials in the crust of Earth; electrical resistance; nanocrystals; nanodisks; non-toxic semiconductors; optical band gap; phase transition; photocurrent; Introduction Metallic chalcogenides based on

• nanostructures, and phase transition were completely described in a scheme based on the TEM images. The full phase transition from chalcocite to digenite is obtained at 260 °C in an organic media. It is clear that the optical and electrical properties are suitable for optoelectronic applications, such as solar

Current–voltage characteristics of single-molecule diarylethene junctions measured with adjustable gold electrodes in solution

• Bernd M. Briechle,
• Youngsang Kim,
• Philipp Ehrenreich,
• Artur Erbe,
• Dmytro Sysoiev,
• Thomas Huhn,
• Ulrich Groth and
• Elke Scheer

Beilstein J. Nanotechnol. 2012, 3, 798–808, doi:10.3762/bjnano.3.89

• small geometrical change, which makes diarylethene molecules promising building blocks for optoelectronic applications [19][20]. Since electrical measurements of diarylethene molecules started, measurements of the charge-transport properties of molecular ensembles by using large-area samples [21

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer

• Jinzhang Liu,
• Nunzio Motta and
• Soonil Lee

Beilstein J. Nanotechnol. 2012, 3, 353–359, doi:10.3762/bjnano.3.41

• photoresponse. Keywords: permeable polymer; photoresponse; polydimethylsiloxane; UV photodetection; ZnO nanowires; Introduction ZnO is a direct wide band gap semiconductor with a 3.37 eV gap and a high exciton binding energy of 60 meV at room temperature, which is promising for optoelectronic applications