In-situ monitoring by Raman spectroscopy of the thermal doping of graphene and MoS₂ in O₂-controlled atmosphere

• Aurora Piazza,
• Filippo Giannazzo,
• Gianpiero Buscarino,
• Gabriele Fisichella,
• Antonino La Magna,
• Fabrizio Roccaforte,
• Marco Cannas,
• Franco Mario Gelardi and
• Simonpietro Agnello

Beilstein J. Nanotechnol. 2017, 8, 418–424, doi:10.3762/bjnano.8.44

• clearly seen. This finding suggests that the observed erosion of the flakes is driven by the formation of oxidized regions at the borders of the MoS2 flakes that gradually convert them to MoO3, before completely destroying them. Similar effects have been suggested for other transition metal

• dichalcogenides and show that the thermal processes could be driven by analogous reactions [32]. In particular, these effects are of relevance for the application of 2D materials in ambient environments where the temperature could be increased during their use. Finally, the possibility that doping of central

Impact of contact resistance on the electrical properties of MoS₂ transistors at practical operating temperatures

• Filippo Giannazzo,
• Gabriele Fisichella,
• Aurora Piazza,
• Salvatore Di Franco,
• Giuseppe Greco,
• Simonpietro Agnello and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2017, 8, 254–263, doi:10.3762/bjnano.8.28

• 373 K, which was explained in terms of electron trapping at MoS2/SiO2 interface states. Keywords: contact resistance; mobility; MoS2; temperature dependence; threshold voltage; Introduction Transition metal dichalcogenides (TMDs) are compound materials formed by the Van der Waals stacking of MX2