Toward the use of CVD-grown MoS₂ nanosheets as field-emission source

• Geetanjali Deokar,
• Nitul S. Rajput,
• Junjie Li,
• Francis Leonard Deepak,
• Wei Ou-Yang,
• Nicolas Reckinger,
• Carla Bittencourt,
• Jean-Francois Colomer and
• Mustapha Jouiad

Beilstein J. Nanotechnol. 2018, 9, 1686–1694, doi:10.3762/bjnano.9.160

• the fabricated MoS2 NSs could have a great potential as robust high-performance electron-emitter material for various applications such as microelectronics and nanoelectronics, flat-panel displays and electron-microscopy emitter tips. Keywords: chemical vapor deposition (CVD); field emission

• ][16] and the number of layers [16]. Various methods have been used to synthesize vertically aligned MoS2 NSs: liquid-phase exfoliation [17], hydrothermal synthesis [8] or chemical vapor deposition (CVD) [15][17][18]. CVD is regarded as the most promising method to synthesize high-quality MoS2 with

• on the NSs transferred onto a conducting fluorine-tin-oxide (FTO) substrate. Experimental Sample preparation The NSs were grown on SiO2/Si substrates via double sulfurization of a sputter-deposited 50 nm Mo film using an ambient-pressure CVD technique. Flushing of the quartz tube using Ar gas stream

Chemistry for electron-induced nanofabrication

• Petra Swiderek,
• Hubertus Marbach and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2018, 9, 1317–1320, doi:10.3762/bjnano.9.124

• chemical vapor deposition (CVD), which is a thermally driven process [6]. Consequently, these precursors are optimized with respect to thermal chemistry and do not necessarily perform well in the electron-driven FEBID process. In fact, they often experience incomplete fragmentation so that material from

Formation mechanisms of boron oxide films fabricated by large-area electron beam-induced deposition of trimethyl borate

• Aiden A. Martin and
• Philip J. Depond

Beilstein J. Nanotechnol. 2018, 9, 1282–1287, doi:10.3762/bjnano.9.120

• and undergoes subsequent reaction with an electron beam. The process has major advantages over thermal chemical vapor deposition (CVD) processes one of which being that the substrate is not exposed to the elevated temperatures required for the thermal decomposition of precursor molecules. To date, the

A novel copper precursor for electron beam induced deposition

• Caspar Haverkamp,
• George Sarau,
• Mikhail N. Polyakov,
• Ivo Utke,
• Marcos V. Puydinger dos Santos,
• Silke Christiansen and
• Katja Höflich

Beilstein J. Nanotechnol. 2018, 9, 1220–1227, doi:10.3762/bjnano.9.113

• deposition should furthermore provide for conductive deposits with a preferably high copper content. Here, the metal-organic precursor bis(tert-butylacetoacetato)Cu(II) (CAS: 23670-45-3, C16H26CuO6) is introduced as a fluorine-free alternative. This precursor is known from chemical vapor deposition (CVD

Review on nanoparticles and nanostructured materials: history, sources, toxicity and regulations

• Jaison Jeevanandam,
• Ahmed Barhoum,
• Yen S. Chan,
• Alain Dufresne and
• Michael K. Danquah

Beilstein J. Nanotechnol. 2018, 9, 1050–1074, doi:10.3762/bjnano.9.98

• morphologies such as hollow tubes, ellipsoids or spheres. Fullerenes (C60), carbon nanotubes (CNTs), carbon nanofibers, carbon black, graphene (Gr), and carbon onions are included under the carbon-based NMs category. Laser ablation, arc discharge, and chemical vapor deposition (CVD) are the important

Single-crystalline FeCo nanoparticle-filled carbon nanotubes: synthesis, structural characterization and magnetic properties

• Rasha Ghunaim,
• Maik Scholz,
• Christine Damm,
• Bernd Rellinghaus,
• Rüdiger Klingeler,
• Bernd Büchner,
• Michael Mertig and
• Silke Hampel

Beilstein J. Nanotechnol. 2018, 9, 1024–1034, doi:10.3762/bjnano.9.95

• the filling material due to the confinement of the material within the hollow tubular cavity. Chemical vapor deposition (CVD) is a technique used to fill MNPs into CNTs via in situ filling, in which metallocene precursors are used as a carbon source and MNPs [22][30][37] or hydrocarbons (such as

Effect of annealing treatments on CeO₂ grown on TiN and Si substrates by atomic layer deposition

• Silvia Vangelista,
• Rossella Piagge,
• Satu Ek and
• Alessio Lamperti

Beilstein J. Nanotechnol. 2018, 9, 890–899, doi:10.3762/bjnano.9.83

• sputtering [7], e-beam [16], physical vapor deposition [17], chemical vapor deposition (CVD) [18], and atomic layer deposition (ALD). The latter has been explored by using different precursors, e.g., Ce(thd)4, Ce(iPrCp)3 and Ce(mmp)4) [19][20][21][22][23], obtaining as-deposited film with polycrystalline

The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene

• Egor A. Kolesov,
• Mikhail S. Tivanov,
• Olga V. Korolik,
• Olesya O. Kapitanova,
• Xiao Fu,
• Hak Dong Cho,
• Tae Won Kang and
• Gennady N Panin

Beilstein J. Nanotechnol. 2018, 9, 704–710, doi:10.3762/bjnano.9.65

• , graphene functionalization techniques, and taking into account adsorption effects during nanoelectronic device engineering. Experimental Graphene was synthesized on Cu foil at 1020 °C by a chemical vapor deposition (CVD) method using a mixture of CH4 of 40 sccm and H2 of 10 sccm. Cu foil (Alfa Aesar

Engineering of oriented carbon nanotubes in composite materials

• Razieh Beigmoradi,
• Abdolreza Samimi and
• Davod Mohebbi-Kalhori

Beilstein J. Nanotechnol. 2018, 9, 415–435, doi:10.3762/bjnano.9.41

• arrangement of CNTs and sorting of nanofibers are done at the same time, as shown in Figure 9 [70]. Recently, direct spinning to a vertical chemical vapor deposition (CVD) synthesis zone has also been studied and is under development to produce CNT fibers and ribbons [44][71]. In a vertical CVD reactor, the

• of a wide range of materials, spraying can be combined with other methods to fabricate composite materials. In this method, a sheet of CNTs is produced by chemical vapor deposition (CVD) on a SiO2/Si substrate that is coated with a very thin layer of iron as a catalyst. The CNT rows have been grown

• may reduce the required magnetic field [108][109][110]. Aleman et al. have recently reported the ferromagnetism of residual catalysts in CVD growth of CNTs. This work shows that adjustment of the size and shape of the catalyst nanoparticle can control the CNT ferromagnetism behavior. This phenomenon

Electron interaction with copper(II) carboxylate compounds

• Michal Lacko,
• Peter Papp,
• Iwona B. Szymańska,
• Edward Szłyk and
• Štefan Matejčík

Beilstein J. Nanotechnol. 2018, 9, 384–398, doi:10.3762/bjnano.9.38

• = CnF2n+1, n = 1–6) were previously applied as Cu CVD precursors [34][38] for the formation of copper nanomaterials. This fact confirms that copper(II) carboxylate compounds can be considered as copper sources in vapor deposition processes. The influence of secondary ligands on the physicochemical

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• chemical vapour deposition (CVD)-synthesized or mechanically exfoliated graphene flakes to the desired position on the substrate, and photo- and electron-beam lithography and metal sputtering techniques for fabrication of the electrical contacts. A SiO2 sacrificial layer may be used for the release of

• explained as follows: currently, large area graphene can be prepared by the CVD technique; synthesized by this method, graphene has a polycrystalline nature. Processes occurring at the grain boundaries of polycrystalline graphene as, for example, charge carrier scattering and mechanical stress, result in

• significant degradation of graphene properties and, consequently, poor performance of the CVD-graphene-based NEM switches. Also, the Young’s modulus of CVD graphene is only about 40% of that of exfoliated pristine graphene (0.4 TPa vs 0.98 TPa [128]). CVD graphene NEM switching elements with comparable

BN/Ag hybrid nanomaterials with petal-like surfaces as catalysts and antibacterial agents

• Konstantin L. Firestein,
• Denis V. Leybo,
• Alexander E. Steinman,
• Andrey M. Kovalskii,
• Andrei T. Matveev,
• Anton M. Manakhov,
• Irina V. Sukhorukova,
• Pavel V. Slukin,
• Nadezda K. Fursova,
• Sergey G. Ignatov,
• Dmitri V. Golberg and
• Dmitry V. Shtansky

Beilstein J. Nanotechnol. 2018, 9, 250–261, doi:10.3762/bjnano.9.27

• 10.3762/bjnano.9.27 Abstract BN/Ag hybrid nanomaterials (HNMs) and their possible applications as novel active catalysts and antibacterial agents are investigated. BN/Ag nanoparticle (NP) hybrids were fabricated using two methods: (i) chemical vapour deposition (CVD) of BN NPs in the presence of Ag

• the CVD method. The best catalytic characteristics (100% methanol conversion at 350 °C) were achieved using the UV BN/Ag HNMs without preliminary annealing at 600 °C in an oxidizing atmosphere. Both types of the BN/Ag HNMs possess a profound antibacterial effect against Escherichia coli K-261 bacteria

• of these nanostructures in an amount sufficient for detailed catalytic and biological tests. Therefore, in the present work, we have synthesized BN-based HNMs using two high-throughput methods: (i) chemical vapour deposition (CVD) of BN NPs in the presence of Ag vapors; and (ii) ultraviolet (UV

Gas-assisted silver deposition with a focused electron beam

• Luisa Berger,
• Katarzyna Madajska,
• Iwona B. Szymanska,
• Katja Höflich,
• Mikhail N. Polyakov,
• Jakub Jurczyk,
• Carlos Guerra-Nuñez and
• Ivo Utke

Beilstein J. Nanotechnol. 2018, 9, 224–232, doi:10.3762/bjnano.9.24

• (AgO2CC2F5), for silver FEBID based on reported successful chemical vapor deposition (CVD) experiments yielding silver films at moderate temperatures of around ≤200 °C [16]. This carboxylate compound showed to be susceptible to electron-induced dissociation, but it requires thermal conditions outside the

Electron-driven and thermal chemistry during water-assisted purification of platinum nanomaterials generated by electron beam induced deposition

• Ziyan Warneke,
• Markus Rohdenburg,
• Jonas Warneke,
• Janina Kopyra and
• Petra Swiderek

Beilstein J. Nanotechnol. 2018, 9, 77–90, doi:10.3762/bjnano.9.10

• reduction of MeCpPtMe3 in CVD processes assisted by H2 can be achieved just below 400 K [19]. We conclude that too little material is left at the surface to gain deeper insight in the purification process when only a single multilayer film of MeCpPtMe3 has been decomposed. We note that desorption of MeCpH

• was not observed although proton transfer to the precursor is antipicated when MeCpPtMe3 is irradiated in the presence of H2O. This is obvious from a lack of desorption signal below the precursor desorption temperature in the m/z 39 data shown in Figure 7. Unlike the CVD process in the presence of H2

Response under low-energy electron irradiation of a thin film of a potential copper precursor for focused electron beam induced deposition (FEBID)

• Leo Sala,
• Iwona B. Szymańska,
• Céline Dablemont,
• Anne Lafosse and
• Lionel Amiaud

Beilstein J. Nanotechnol. 2018, 9, 57–65, doi:10.3762/bjnano.9.8

• , Poland, for chemical vapor deposition (CVD) [6][7][8]. Among these complexes, two different compounds, [Cu2(EtNH2)2(μ-O2CC3F7)4] and [Cu2(EtNH2)2(μ-O2CC2F5)4] (Figure 1) will be studied in the present paper and hereafter named as compound A and compound B, respectively. They differ only by the length of

• the four perfluorinated carboxylate ligands. The use of lightly bound amine and carboxylate ligands gives complexes that are stable in gel form under ambient conditions but yield a copper purity from 60% to 80% in CVD. In these CVD studies, the sublimation of the full complexes was observed to be

Electro-optical characteristics of a liquid crystal cell with graphene electrodes

• Nune H. Hakobyan,
• Hakob L. Margaryan,
• Valeri K. Abrahamyan,
• Vladimir M. Aroutiounian,
• Arpi S. Dilanchian Gharghani,
• Amalya B. Kostanyan,
• Timothy D. Wilkinson and
• Nelson Tabirian

Beilstein J. Nanotechnol. 2017, 8, 2802–2806, doi:10.3762/bjnano.8.279

• . Results and Discussion Synthesis of graphene films The graphene was obtained by a chemical vapor deposition (CVD) process. Details of synthesis and extensive characterization of the CVD graphene can be found in prior works [13][14]. The monolayer graphene film was then transferred from the Cu foil to a

The rational design of a Au(I) precursor for focused electron beam induced deposition

• Ali Marashdeh,
• Thiadrik Tiesma,
• Niels J. C. van Velzen,
• Sjoerd Harder,
• Remco W. A. Havenith,
• Jeff T. M. De Hosson and
• Willem F. van Dorp

Beilstein J. Nanotechnol. 2017, 8, 2753–2765, doi:10.3762/bjnano.8.274

• , but non-volatile [12]. MeAuPMe3 has been used for chemical vapor deposition (CVD) [51][52] and can be used for FEBIP. However, the electron-induced dissociation is incomplete, with just a single methyl ligand being removed [12]. The studies of Au(I) compounds that have been made so far have raised

Dry adhesives from carbon nanofibers grown in an open ethanol flame

• Christian Lutz,
• Julia Syurik,
• C. N. Shyam Kumar,
• Christian Kübel,
• Michael Bruns and
• Hendrik Hölscher

Beilstein J. Nanotechnol. 2017, 8, 2719–2728, doi:10.3762/bjnano.8.271

• in a closed chamber. The standard process for their growth is chemical vapor deposition (CVD) [3], which results in randomly oriented structures, whereas a plasma-enhanced CVD (PECVD) [4] allows for the growth of aligned structures. During growth of 1D-CNs, oxidized catalytic centers reduce into

• adhesives is comparably simple and environmentally friendly. Only 1.2 mL ethanol are needed to produce one sample of roughly one square centimeter covered with CNFs with a growing time of 3 min. This is much less than the amount of process gases necessary to grow CNFs with conventional CVD methods. At the

Synthesis of [{AgO₂CCH₂OMe(PPh₃)}_n] and theoretical study of its use in focused electron beam induced deposition

• Jelena Tamuliene,
• Julian Noll,
• Peter Frenzel,
• Tobias Rüffer,
• Alexander Jakob,
• Bernhard Walfort and
• Heinrich Lang

Beilstein J. Nanotechnol. 2017, 8, 2615–2624, doi:10.3762/bjnano.8.262

• -domain control [1][2][3]. Up to now, FEBID relies on the chemical availability of chemical vapor deposition (CVD) precursors. However, such precursors are not optimized for the electron-driven FEBID process and hence molecular precursors particularly adapted to its underlying electron-induced

• -bonded PPh3 group could be detected under the measurement conditions applied (Experimental, Figure 5). To show, if 2 is a suitable FEBID or chemical vapor deposition (CVD) precursor for the deposition of silver, vapor pressure measurements of 2 were undertaken (Figure 6). In order to determine the

• , with an evaporation enthalpy of ΔHvap = 126.1 kJ mol−1. These data approve that 2 is confined to be used as CVD precursor. In addition to the mass-spectrometric and vapor pressure measurements (see earlier), it was proven that coordination compound 2 can experimentally brought into the vapor phase

Localized growth of carbon nanotubes via lithographic fabrication of metallic deposits

• Fan Tu,
• Martin Drost,
• Imre Szenti,
• Janos Kiss,
• Zoltan Kónya and
• Hubertus Marbach

Beilstein J. Nanotechnol. 2017, 8, 2592–2605, doi:10.3762/bjnano.8.260

• morphology, for example, as individual nanotubes or as CNT forests. Electron beam induced deposition (EBID) with subsequent autocatalytic growth (AG) was applied to lithographically produce catalytically active seeds for the localized growth of CNTs via chemical vapor deposition (CVD). With the precursor Fe

• though the metal content (Co) of the latter is reduced in comparison to the Fe deposits, effective CNT growth was observed for the Co-containing deposits at lower CVD temperatures than for the corresponding Fe deposits. Keywords: autocatalytic growth; carbon nanotubes; cobalt tricarbonyl nitrosyl

• storage [1][2][3][4]. The most common synthesis method for CNTs is chemical vapor deposition (CVD) [5][6][7][8], in which statistically distributed, metal-containing particles act as catalysts for CNT growth. Thereby, not only does the random position of the catalyst particles determine the position of

Interactions of low-energy electrons with the FEBID precursor chromium hexacarbonyl (Cr(CO)₆)

• Jusuf M. Khreis,
• João Ameixa,
• Filipe Ferreira da Silva and
• Stephan Denifl

Beilstein J. Nanotechnol. 2017, 8, 2583–2590, doi:10.3762/bjnano.8.258

• deposition (FEBID) can be considered an assisted chemical vapour deposition (CVD) technique. However, in the former case the organometallic precursor is not fragmented by thermal energy but instead by a high-energy electron beam. The precursor molecules are delivered to the substrate in the gas phase and

• uneven surfaces. Although FEBID is a promising technique, improvements are still needed in order to get pure and highly resolved deposits. CVD precursors are normally used as FEBID precursors; however, their performance is limited, leading to co-deposition of ligands and ligand fragments together with

Interface conditions of roughness-induced superoleophilic and superoleophobic surfaces immersed in hexadecane and ethylene glycol

• Yifan Li,
• Yunlu Pan and
• Xuezeng Zhao

Beilstein J. Nanotechnol. 2017, 8, 2504–2514, doi:10.3762/bjnano.8.250

• function layer (thickness ca. 20 nm) by chemical vapor deposition (CVD), one drop (about 0.1 mL) of methyltrichlorosilane (methylsilane, Sigma Aldrich) was placed next to the samples under sealing and left for 10 h. To prepare the superoleophobic surface, the same materials and processes as for

Dissociative electron attachment to coordination complexes of chromium: chromium(0) hexacarbonyl and benzene-chromium(0) tricarbonyl

• Janina Kopyra,
• Paulina Maciejewska and
• Jelena Maljković

Beilstein J. Nanotechnol. 2017, 8, 2257–2263, doi:10.3762/bjnano.8.225

• [1][2][3]. However, they also play an important role in nanotechnology. In fact, a number of organometallic complexes, originally designed for chemical vapor deposition (CVD) purposes, have also been recognized as promising precursors for focused electron beam induced deposition (FEBID), a process to

Vapor-based polymers: from films to nanostructures

• Meike Koenig and
• Joerg Lahann

Beilstein J. Nanotechnol. 2017, 8, 2219–2220, doi:10.3762/bjnano.8.221

• applications. In this context, the versatility of poly(chloro-p-xylylene) in the application of flexible organic electronics is presented in a review article by Marszalek et al. [9]. The absence of small molecule compounds or solvents in CVD films mitigates the risk of potential leakage of hazardous residues

A systematic study of the controlled generation of crystalline iron oxide nanoparticles on graphene using a chemical etching process

• Peter Krauß,
• Jörg Engstler and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2017, 8, 2017–2025, doi:10.3762/bjnano.8.202

• Peter Krauss Jorg Engstler Jorg J. Schneider Fachbereich Chemie, Eduard-Zintl-Institut für Anorganische und Physikalische Chemie, Technische Universität Darmstadt, Alarich-Weiss Str. 12, 64287 Darmstadt, Germany 10.3762/bjnano.8.202 Abstract Chemical vapor deposition (CVD) of carbon precursors

• employing a metal catalyst is a well-established method for synthesizing high-quality single-layer graphene. Yet the main challenge of the CVD process is the required transfer of a graphene layer from the substrate surface onto a chosen target substrate. This process is delicate and can severely degrade the

• on graphene are active in the catalytic growth of carbon nanotubes when employing a water-assisted CVD process. Keywords: carbon nanotubes; chemical vapor deposition; graphene; iron oxide; nanoparticles; Introduction Graphene was first described by Boehm and coworkers in the early 1960s [1][2][3][4