Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

• Cathy Bugot,
• Nathanaëlle Schneider,
• Daniel Lincot and
• Frédérique Donsanti

Beilstein J. Nanotechnol. 2013, 4, 750–757, doi:10.3762/bjnano.4.85

• growth rate while using H2O as oxygen precursor and (b) GIXRD diffractogram. The reference diffraction pattern for In2S3 is taken from the database JCPDS 00-005-0731. Influence of the ratio of In2O3 cycles on the film absorption spectra when using H2O as oxygen precursor. Influence of a) the number of

Preparation of electrochemically active silicon nanotubes in highly ordered arrays

• Tobias Grünzel,
• Young Joo Lee,
• Karsten Kuepper and
• Julien Bachmann

Beilstein J. Nanotechnol. 2013, 4, 655–664, doi:10.3762/bjnano.4.73

• with an instrument model EL X-02 P Spec from DRE Dr. Riss Ellipsometerbau GmbH from 400 to 1000 nm. Fits were performed by using the database of material files provided with the instrument. Mixed layers were treated with the Lorentz–Lorentz model as implemented in the software of the instrument

Nano-structuring, surface and bulk modification with a focused helium ion beam

• Daniel Fox,
• Yanhui Chen,
• Colm C. Faulkner and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2012, 3, 579–585, doi:10.3762/bjnano.3.67

• in the spectra at ≈99 eV was observed to degrade from the top spectrum to the bottom. We compared our data to the spectra for crystalline and amorphous silicon from an online database [27]. The intensity of the peak at ≈99 eV is used as an indication of the crystallinity of the silicon. A higher

Towards a scalable and accurate quantum approach for describing vibrations of molecule–metal interfaces

• David M. Benoit,
• Bruno Madebene,
• Inga Ulusoy,
• Luis Mancera,
• Yohann Scribano and
• Sergey Chulkov

Beilstein J. Nanotechnol. 2011, 2, 427–447, doi:10.3762/bjnano.2.48