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Search for "dopant" in Full Text gives 131 result(s) in Beilstein Journal of Nanotechnology.
Plasmonics-based detection of H2 and CO: discrimination between reducing gases facilitated by material control
Beilstein J. Nanotechnol. 2012, 3, 712–721, doi:10.3762/bjnano.3.81
- overcoat has a crucial role in restricting the growth of the Au NPs during long-term high-temperature exposures, and its thickness has a direct impact on the number of oxygen vacancies in the film. The vacancies are introduced into the film through the yttria dopant in zirconia. YSZ is an excellent oxygen
- , and the number of oxygen vacancies that would be formed due to the yttria dopant level. Calculation of the number of oxygen vacancies per square centimeter led to the following numbers for the films: 8.16 × 1015/cm2 for the small-particle sample and the thinner gold sample, 2.04 × 1015/cm2 for the
Nano-structuring, surface and bulk modification with a focused helium ion beam
Beilstein J. Nanotechnol. 2012, 3, 579–585, doi:10.3762/bjnano.3.67
- properties of the surface [18]. Some other applications to date include imaging of chemical variations at high resolution [19], quantitative dopant contrast mapping [20] and imaging of uncoated biological materials [21]. In this work we further investigate the ability of the HIM to modify a material’s
Synthesis and electrical characterization of intrinsic and in situ doped Si nanowires using a novel precursor
Beilstein J. Nanotechnol. 2012, 3, 564–569, doi:10.3762/bjnano.3.65
- doped NWs appeared to be [112] oriented with a specific resistivity of ρ = 198 mΩ·cm for p-type Si-NWs and ρ = 2.7 mΩ·cm for n-doped Si-NWs, revealing excellent dopant activation. Keywords: chemical vapour deposition; field-effect transistor; oligosilanes; radiation-induced nanostructures; silicon
- of dopant intentionally to the Au catalyst particle [22]. Much more common and effective is to add a gaseous dopant, such as PH3, B2H6 or B(CH3)3, to the precursor gas feed during growth. Thus, for example, p–i–n+-type doped Si-NW heterostructures with a resistivity of a few mΩ·cm have been achieved
- decomposition of the precursor and therefore increases the growth rate. With PCl3 as the dopant, at least 800 °C, 20 sccm H2, and a 2 nm layer of Au were needed to produce epitaxial NWs in considerable quantity. For a more detailed view of the morphology of the intrinsic and doped Si-NWs we performed HRTEM
X-ray absorption spectroscopy by full-field X-ray microscopy of a thin graphite flake: Imaging and electronic structure via the carbon K-edge
Beilstein J. Nanotechnol. 2012, 3, 345–350, doi:10.3762/bjnano.3.39
- . The peak at 284.2 eV, very clear in the spectrum of the flat part of the graphene, also exists at about the same intensity relative to the C 1s continuum intensity, in the spectrum of the fold. Schultz et al. [12] assigned this pre-edge structure to dopant-induced states. As we did not observe this in
Effect of the tip state during qPlus noncontact atomic force microscopy of Si(100) at 5 K: Probing the probe
Beilstein J. Nanotechnol. 2012, 3, 25–32, doi:10.3762/bjnano.3.3
- atomic diameter per scan), and therefore drift is not an issue in the assignment of atomic position. This assignment is confirmed by analysis of other images with similar contrast in which the presence of dopant-related defects [22][28] allows unambiguous identification of true contrast inversion
Magnetic nanoparticles for biomedical NMR-based diagnostics
Beilstein J. Nanotechnol. 2010, 1, 142–154, doi:10.3762/bjnano.1.17
- highest magnetization and r2 value, on account of their electron spin configurations, followed by FeFe2O4, CoFe2O4, and NiFe2O4. More recently, it has been demonstrated that magnetization can be further enhanced via additional Zn2+ dopant control in MnFe2O4 nanoparticles [46]. In addition, nanoparticle
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