Plasma fluorination of vertically aligned carbon nanotubes: functionalization and thermal stability

• Claudia Struzzi,
• Mattia Scardamaglia,
• Axel Hemberg,
• Luca Petaccia,
• Jean-François Colomer,
• Rony Snyders and
• Carla Bittencourt

Beilstein J. Nanotechnol. 2015, 6, 2263–2271, doi:10.3762/bjnano.6.232

• a fine selection of grafted species and tuning of electronic properties. Experimental vCNTs were produced by catalytic chemical vapor deposition (CCVD) at atmospheric pressure. The catalysts were prepared by magnetron sputtering; first, a 30 nm Al2O3 buffer layer was deposited on Si wafers with

Enhanced model for determining the number of graphene layers and their distribution from X-ray diffraction data

• Beti Andonovic,
• Abdulakim Ademi,
• Anita Grozdanov,
• Perica Paunović and
• Aleksandar T. Dimitrov

Beilstein J. Nanotechnol. 2015, 6, 2113–2122, doi:10.3762/bjnano.6.216

• attracted great interest in terms of fundamental studies as well as potential applications [2]. To date, several methods have been used to produce high-quality graphene sheets, such as mechanical exfoliation of graphite, chemical vapor deposition (CVD) of gases containing carbon atoms on the surface of

Effect of SiN_x diffusion barrier thickness on the structural properties and photocatalytic activity of TiO₂ films obtained by sol–gel dip coating and reactive magnetron sputtering

• Mohamed Nawfal Ghazzal,
• Eric Aubry,
• Nouari Chaoui and
• Didier Robert

Beilstein J. Nanotechnol. 2015, 6, 2039–2045, doi:10.3762/bjnano.6.207

• plasma-enhanced chemical vapor deposition, respectively. In this paper, we studied the effect of the SiNx thickness on thin TiO2 layers coated by either a soft chemistry (sol–gel) or physical (reactive sputtering) method. In earlier work, we studied the concentration of Na+ ions as a function of the SiNx

Nitrogen-doped graphene films from chemical vapor deposition of pyridine: influence of process parameters on the electrical and optical properties

• Andrea Capasso,
• Theodoros Dikonimos,
• Francesca Sarto,
• Alessio Tamburrano,
• Giovanni De Bellis,
• Maria Sabrina Sarto,
• Giuliana Faggio,
• Angela Malara,
• Giacomo Messina and
• Nicola Lisi

Beilstein J. Nanotechnol. 2015, 6, 2028–2038, doi:10.3762/bjnano.6.206

• Moro 5, 00185 Rome, Italy Dipartimento di Ingegneria dell'Informazione, delle Infrastrutture e dell'Energia Sostenibile (DIIES), Università “Mediterranea” di Reggio Calabria, 89122 Reggio Calabria, Italy 10.3762/bjnano.6.206 Abstract Graphene films were produced by chemical vapor deposition (CVD) of

• production of high-quality graphene for electronics is probably chemical vapor deposition (CVD). By this technique it is possible to produce graphene with large grain sizes and high crystalline quality over large areas [14]. Nonetheless, the sheet resistance of most CVD-graphene films (even in single-crystal

The role of low-energy electrons in focused electron beam induced deposition: four case studies of representative precursors

• Rachel M. Thorman,
• Ragesh Kumar T. P.,
• D. Howard Fairbrother and
• Oddur Ingólfsson

Beilstein J. Nanotechnol. 2015, 6, 1904–1926, doi:10.3762/bjnano.6.194

• attributes: i) sufficient vapor pressure to facilitate their introduction into a vacuum chamber, ii) chemical stability under ambient conditions and iii) non-toxicity and easy handling. These criteria are the same as those that define suitable precursors for chemical vapor deposition (CVD) [4][5]. Because of

Metal hydrides: an innovative and challenging conversion reaction anode for lithium-ion batteries

• Luc Aymard,
• Yassine Oumellal and
• Jean-Pierre Bonnet

Beilstein J. Nanotechnol. 2015, 6, 1821–1839, doi:10.3762/bjnano.6.186

• : 65.3 kJ·(mol H2)−1 bulk material: 74 kJ·(mol H2)−1). Hydriding chemical vapor deposition (HCVD) is also a powerful method to produce in situ high purity nano/microscale MgH2 under hydrogen. This method, which enables to play with temperature and pressure, is a nice tool for the preparation of a variety

Possibilities and limitations of advanced transmission electron microscopy for carbon-based nanomaterials

• Xiaoxing Ke,
• Carla Bittencourt and
• Gustaaf Van Tendeloo

Beilstein J. Nanotechnol. 2015, 6, 1541–1557, doi:10.3762/bjnano.6.158

• electronic scattering and phonon scattering are very likely to be disturbed at the boundary. The fundamental studies on the atomic structure of graphene have a significant impact on the large-scale applications of graphene. Graphene synthesized through chemical vapor deposition (CVD) often exhibits a

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

• Aleksandra Szkudlarek,
• Alfredo Rodrigues Vaz,
• Yucheng Zhang,
• Andrzej Rudkowski,
• Czesław Kapusta,
• Rolf Erni,
• Stanislav Moshkalev and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1508–1517, doi:10.3762/bjnano.6.156

• makes the localized deposition of this metal very attractive for applications in nano-electronics. The organometallic hexafluoroacetylacetonate (hfac)-based Cu(I) and Cu(II) precursors are widely used in chemical vapor deposition (CVD) methods due to their stability and high vapor pressure. They allow

Using natural language processing techniques to inform research on nanotechnology

• Nastassja A. Lewinski and
• Bridget T. McInnes

Beilstein J. Nanotechnol. 2015, 6, 1439–1449, doi:10.3762/bjnano.6.149

• reporting arc-discharge and laser vaporization synthesis methods [26]. Chemical vapor deposition (CVD) methods were also mentioned as being invented frequently. Top patenting companies included NEC, Samsung and Sony. Their dynamic tool revealed a possible patent vacuum of using low temperature or microwave

The convenient preparation of stable aryl-coated zerovalent iron nanoparticles

• Olga A. Guselnikova,
• Andrey I. Galanov,
• Anton K. Gutakovskii and
• Pavel S. Postnikov

Beilstein J. Nanotechnol. 2015, 6, 1192–1198, doi:10.3762/bjnano.6.121

• using diazonium salts have been published [19][20]. Generally one of the following methods is used to synthesize carbon-coated NPs: reducing flame spray synthesis, flame aerosol synthesis, chemical vapor deposition, etc. However, these procedures require special equipment or techniques [21]. One of the

Interaction of electromagnetic radiation in the 20–200 GHz frequency range with arrays of carbon nanotubes with ferromagnetic nanoparticles

• Agylych Atdayev,
• Alexander L. Danilyuk and
• Serghej L. Prischepa

Beilstein J. Nanotechnol. 2015, 6, 1056–1064, doi:10.3762/bjnano.6.106

• resistive–inductive–capacitive (RiLiCi) circuits, which leads to a deeper understanding of the problem. Such nanocomposites can be easily synthesized in situ during the CNT growth by chemical vapor deposition, which involves carbon decomposition of an organic precursor with 3d catalytic metals such as Fe

• , Ni and Co [32]. Model Before describing our theoretical approach in detail, we first specify the object of investigation targeted in this work. We consider the CNT-based nanocomposite synthesized by floating catalyst chemical vapor deposition (FCCVD) employing ferrocene Fe(C5H5)2 as the source of

Characterization of nanostructured ZnO thin films deposited through vacuum evaporation

• Jose Alberto Alvarado,
• Arturo Maldonado,
• Héctor Juarez,
• Mauricio Pacio and
• Rene Perez

Beilstein J. Nanotechnol. 2015, 6, 971–975, doi:10.3762/bjnano.6.100

• , they can be used in many applications, such as gas sensors [4]. A wide range of techniques to deposit thin films are used, such as molecular beam epitaxy (MBE) [5], single-source chemical vapor deposition (SS CVD) [6], metalorganic chemical vapor deposition (MOCVD) [7], sol–gel [8], spray pyrolysis [9

Observing the morphology of single-layered embedded silicon nanocrystals by using temperature-stable TEM membranes

• Sebastian Gutsch,
• Daniel Hiller,
• Jan Laube,
• Margit Zacharias and
• Christian Kübel

Beilstein J. Nanotechnol. 2015, 6, 964–970, doi:10.3762/bjnano.6.99

• -plane energy-filtered TEM (EFTEM) as was demonstrated for Si NCs formed by low energy Si ion implantation [10][26], plasma-enhanced chemical vapor deposition (PE-CVD) [27] or evaporation [28] followed by a high temperature annealing. The bottleneck in such measurements is the low TEM plane view specimen

Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature

• Mykola Telychko,
• Jan Berger,
• Zsolt Majzik,
• Pavel Jelínek and
• Martin Švec

Beilstein J. Nanotechnol. 2015, 6, 901–906, doi:10.3762/bjnano.6.93

• hinders applications of epitaxial graphene in the nanoelectronics [1]. The two main methods of epitaxial graphene growth are chemical vapor deposition (CVD) on metal surfaces [2] and annealing of silicon carbide (SiC) [3]. The large conductivity of metal substrates leaves graphene on metals as model-only

Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition

• Florian Waltz,
• Hans-Christoph Schwarz,
• Andreas M. Schneider,
• Stefanie Eiden and
• Peter Behrens

Beilstein J. Nanotechnol. 2015, 6, 799–808, doi:10.3762/bjnano.6.83

• more than 2100 publications in 2013 (Thomson Reuters, Web of Knowledge). Several methods have been used to deposit ZnO on different substrates, for example, pulsed laser deposition (PLD) [11], chemical vapor deposition (CVD) [12][13], as well as wet chemical approaches such as sol–gel synthesis [14

Applications of three-dimensional carbon nanotube networks

• Manuela Scarselli,
• Paola Castrucci,
• Francesco De Nicola,
• Ilaria Cacciotti,
• Francesca Nanni,
• Emanuela Gatto,
• Mariano Venanzi and
• Maurizio De Crescenzi

Beilstein J. Nanotechnol. 2015, 6, 792–798, doi:10.3762/bjnano.6.82

• constructing three-dimensional random meshes from their overlapping. Recently, Gui and co-workers [6] fabricated CNT-sponges through a chemical vapor deposition (CVD) process during which a catalyst precursor (ferrocene) dissolved in dichlorobenzene, which acted as carbon precursor, was injected in the reactor

• structural fluctuations give different response to incident light. Conclusion A chemical vapor deposition process can be used to synthesize three-dimensional porous structures composed of CNTs. The obtained CNT material exhibits a sponge-like structure and has a low density. The capability to adsorb and

• thorough study on the correlation between the observed properties and the structural and electronic features of the network is ongoing. Experimental Chemical vapor deposition process for the growth of 3D CNT networks: The chemical vapor deposition process was carried out in a horizontal hot-wall quartz

Morphological and structural characterization of single-crystal ZnO nanorod arrays on flexible and non-flexible substrates

• Omar F. Farhat,
• Mohd M. Halim,
• Mat J. Abdullah,
• Mohammed K. M. Ali and
• Nageh K. Allam

Beilstein J. Nanotechnol. 2015, 6, 720–725, doi:10.3762/bjnano.6.73

• , various methods have been reported in the literature to produce amorphous and polycrystalline ZnO nanomaterials, especially in the form of nanorods. Also, several deposition methods have been reported to fabricate single-crystal ZnO nanorods, such as RF and DC sputtering [6], chemical vapor deposition

Electroburning of few-layer graphene flakes, epitaxial graphene, and turbostratic graphene discs in air and under vacuum

• Andrea Candini,
• Nils Richter,
• Domenica Convertino,
• Camilla Coletti,
• Franck Balestro,
• Wolfgang Wernsdorfer,
• Mathias Kläui and
• Marco Affronte

Beilstein J. Nanotechnol. 2015, 6, 711–719, doi:10.3762/bjnano.6.72

• suppression of conductance fluctuations [14]. Recent works have successfully made use of graphene for the realization of electrodes in molecular devices [10][17]. Specifically, parallel multi-junctions devices have been fabricated in chemical vapor deposition (CVD) graphene by electron beam lithography and

Observation of a photoinduced, resonant tunneling effect in a carbon nanotube–silicon heterojunction

• Carla Aramo,
• Antonio Ambrosio,
• Michelangelo Ambrosio,
• Maurizio Boscardin,
• Paola Castrucci,
• Michele Crivellari,
• Marco Cilmo,
• Maurizio De Crescenzi,
• Francesco De Nicola,
• Emanuele Fiandrini,
• Valentina Grossi,
• Pasqualino Maddalena,
• Maurizio Passacantando,
• Sandro Santucci,
• Manuela Scarselli and
• Antonio Valentini

Beilstein J. Nanotechnol. 2015, 6, 704–710, doi:10.3762/bjnano.6.71

• obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD) technique on a 60 nm thick, silicon nitride layer, deposited on an n-type Si substrate. The heterojunction

• 60 nm of silicon nitride (Si3N4) is grown by plasma-enhanced chemical vapor deposition (PECVD). Two, circular, metallic Ti/Pt electrodes of 1 mm in diameter are placed at a distance of 4 mm from each other (Figure 1a) on the silicon nitride surface. A metallic guard ring, 1 mm wide, serves to inhibit

Simple approach for the fabrication of PEDOT-coated Si nanowires

• Mingxuan Zhu,
• Marielle Eyraud,
• Judikael Le Rouzo,
• Nadia Ait Ahmed,
• Florence Boulc’h,
• Claude Alfonso,
• Philippe Knauth and
• François Flory

Beilstein J. Nanotechnol. 2015, 6, 640–650, doi:10.3762/bjnano.6.65

• individually coated. Various fabrication efforts have been attempted to achieve a true core–shell p–n junction. For example, chemical vapor deposition (CVD) [10][11] and atomic layer deposition (ALD) [12] are methods that can be employed to obtain this type of nanostructured junction, however, they suffer from

A versatile strategy towards non-covalent functionalization of graphene by surface-confined supramolecular self-assembly of Janus tectons

• Ping Du,
• David Bléger,
• Fabrice Charra,
• Vincent Bouchiat,
• David Kreher,
• Fabrice Mathevet and
• André-Jean Attias

Beilstein J. Nanotechnol. 2015, 6, 632–639, doi:10.3762/bjnano.6.64

• upper level, terpyridine unit) can partially explain these features. All of the upper units are size-compatible with the huge footprint value. Finally, the self-assembly of the Janus tectons onto a graphene monolayer, grown by chemical vapor deposition onto a polycrystalline foil, was investigated. As

• illustrate the agreement between all Janus tecton lattices. Figure adapted with permission from [25], copyright 2014 Wiley-VCH Verlag GmbH & Co. Self-assembly on graphene. Drift-corrected STM images obtained in air on a monolayer graphene substrate grown by chemical vapor deposition on a polycrystalline

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation

• Jacques Perrin Toinin,
• Alain Portavoce,
• Khalid Hoummada,
• Michaël Texier,
• Maxime Bertoglio,
• Sandrine Bernardini,
• Marco Abbarchi and
• Lee Chow

Beilstein J. Nanotechnol. 2015, 6, 336–342, doi:10.3762/bjnano.6.32

• electrochemical etching, spark processing or inductively coupled plasma chemical vapor deposition [13][14][15]. Ion implantation is a well-known technique used in the microelectronic industry to dope the active regions of semiconductor devices. Generally, implantation leads to the formation of defects of

X-ray photoelectron spectroscopy of graphitic carbon nanomaterials doped with heteroatoms

• Toma Susi,
• Thomas Pichler and
• Paola Ayala

Beilstein J. Nanotechnol. 2015, 6, 177–192, doi:10.3762/bjnano.6.17

• the Fermi level shift via ARPES [87]. After intercalating hydrogen between the SiC substrate and monolayer graphene, a value of 284.6 eV has been reported [75]. As graphene is commonly grown by chemical vapor deposition on catalytic metals, several XPS measurements on metal surfaces are available

• (N-SWCNT) synthesis was reported by Glerup et al. in 2004 by using arc discharge [111], later followed by laser ablation [112] and many different variations of chemical vapor deposition methods [113][114][115][116][117][118][119][120][121][122][123][124][125] (see also [33][34]). Nitrogen-doped

• graphene (N-graphene) has since been synthesized by using numerous methods, amongst them chemical vapor deposition [126][127], post-synthesis treatments [128][129], and ion implantation [30] (see also [107][130]). Accordingly, there are hundreds of studies that use XPS to study nitrogen doping. However, it

Synthesis of boron nitride nanotubes and their applications

• Saban Kalay,
• Zehra Yilmaz,
• Ozlem Sen,
• Melis Emanet,
• Emine Kazanc and
• Mustafa Çulha

Beilstein J. Nanotechnol. 2015, 6, 84–102, doi:10.3762/bjnano.6.9

• ], and flavin mononucleotides (FMN) [19]. The synthesis of BNNTs was first reported in 1995 [20] by Chopra, based on an arc discharge method. Following the first report, several methods including arc discharge [20][21][22], chemical vapor deposition (CVD) [23][24][25][26], substitution reactions [27][28

• precursor) and MoO3 (as the catalyst) under N2(g) atmosphere at 1500 °C for 30 min [29]. Although this method can be used to produce BNNTs, the outcome is not always pure BNNTs but rather some B- and N-doped CNTs result in addition [48]. Chemical vapor deposition Chemical vapor deposition (CVD) is a well

Si/Ge intermixing during Ge Stranski–Krastanov growth

• Alain Portavoce,
• Khalid Hoummada,
• Antoine Ronda,
• Dominique Mangelinck and
• Isabelle Berbezier

Beilstein J. Nanotechnol. 2014, 5, 2374–2382, doi:10.3762/bjnano.5.246

• concentration reaching ≈15 atom % in the rest of the island. The composition of Ge islands depends on the growth conditions. Ge islands exhibiting a Si-rich core were shown to correspond to growth conditions allowing for near-equilibrium states to be reached, which is more typical for the case of chemical vapor

• deposition [34]. Ge islands exhibiting a Ge-rich core were shown to be related to growth conditions promoting far-from-equilibrium states, controlled by kinetic processes, which is more typical for the case of MBE growth [34]. Equilibrium is reached through free energy minimization, taking into account the