Correction: Remarkable electronic and optical anisotropy of layered 1T’-WTe₂ 2D materials

• Qiankun Zhang,
• Rongjie Zhang,
• Jiancui Chen,
• Wanfu Shen,
• Chunhua An,
• Xiaodong Hu,
• Mingli Dong,
• Jing Liu and
• Lianqing Zhu

Beilstein J. Nanotechnol. 2019, 10, 1922–1922, doi:10.3762/bjnano.10.187

• and Opto-Electronics Engineering, Tianjin University, 92 Weijin road, Tianjin 300072, China 10.3762/bjnano.10.187 Keywords: 1T'-WTe2; 2D material; anisotropic; light polarization; optoelectrical; The authors wish to add the following sentence to the Acknowledgement section: The optical anisotropic

Remarkable electronic and optical anisotropy of layered 1T’-WTe₂ 2D materials

• Qiankun Zhang,
• Rongjie Zhang,
• Jiancui Chen,
• Wanfu Shen,
• Chunhua An,
• Xiaodong Hu,
• Mingli Dong,
• Jing Liu and
• Lianqing Zhu

Beilstein J. Nanotechnol. 2019, 10, 1745–1753, doi:10.3762/bjnano.10.170

• , quantitative research on 1T’-WTe2 has been reported, revealing its fascinating physical properties such as non-saturating magnetoresistance, highly anisotropic crystalline structure and anisotropic optical/electrical response. Especially for its anisotropic properties, surging research interest devoted solely

• to understanding its structural and optical properties has been undertaken. Here we report quantitative, comprehensive work on the highly anisotropic, optical, electrical and optoelectronic properties of few-layer 1T’-WTe2 by azimuth-dependent reflectance difference microscopy, DC conductance

• measurements, as well as polarization-resolved and wavelength-dependent optoelectrical measurements. The electrical conductance anisotropic ratio is found to ≈103 for a thin 1T’-WTe2 film, while the optoelectronic anisotropic ratio is around 300 for this material. The polarization dependence of the photo

Ab initio study of adsorption and diffusion of lithium on transition metal dichalcogenide monolayers

• Xiaoli Sun and
• Zhiguo Wang

Beilstein J. Nanotechnol. 2017, 8, 2711–2718, doi:10.3762/bjnano.8.270

• ]. The 2H phase is the stable structure for MoS2, MoSe2, WS2 and WSe2 monolayers, which has also been predicted by other simulations [36][37][38][39][40]. 1T'-VTe2, 1T'-MoTe2 and 1T'-WTe2 are the energetically favourable phases. It is also can be seen from Table 1 that 1T'-MoTe2 is 0.06 eV/f.u. more

• energetically favourable than the 1T phase, which agrees with other simulations [36][39][40]. The energy difference between 2H-WTe2 and 1T'-WTe2 is 0.07 eV/f.u., which indicates MoTe2 and WTe2 maybe exist in two phases. The calculated lattice constants and bond length of the M–X bond in the stable phase is

• , 1T-ZrX2 and 1T-HfX2 show semiconducting and metallic behaviour with X = S/Se and X = Te, respectively. 1T'-VTe2 and 1T'-MoTe2 show metallic behaviour and 1T'-WTe2 has a narrow bandgap of 0.50 eV. The obtained bandgap values are close to those previously reported for TiS2 [32], CrTe2 [40], TiX2 [32