Sidewall angle tuning in focused electron beam-induced processing

• Sangeetha Hari,
• Willem F. van Dorp,
• Johannes J. L. Mulders,
• Piet H. F. Trompenaars,
• Pieter Kruit and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 447–456, doi:10.3762/bjnano.15.40

• applications this is highly undesirable, especially when neighboring structures are interconnected. A new technique combining FEBID and focused electron beam-induced etching (FEBIE) has been developed to fabricate structures with vertical sidewalls. The sidewalls of carbon FEBID structures have been modified

• etching the deposit from below, resulting in under-etched structures. The evolution of the sidewall angle during etching has also been experimentally observed in a scanning electron microscope by continuously monitoring the secondary electron detector signal. Keywords: electron lithography; FEBID; FEBIE

• ) or the removal of substrate material by reactive precursor fragments, that is, etching (focused electron beam-induced etching, FEBIE). For the interested reader, the literature contains a number of good reviews of the technique [1][2][3][4][5]. The cross section of a line patterned using FEBID

Graphene removal by water-assisted focused electron-beam-induced etching – unveiling the dose and dwell time impact on the etch profile and topographical changes in SiO₂ substrates

• Aleksandra Szkudlarek,
• Jan M. Michalik,
• Inés Serrano-Esparza,
• Zdeněk Nováček,
• Veronika Novotná,
• Piotr Ozga,
• Czesław Kapusta and
• José María De Teresa

Beilstein J. Nanotechnol. 2024, 15, 190–198, doi:10.3762/bjnano.15.18

• processes using the so-called focused electron-beam-induced etching (FEBIE), with a spatial resolution of ten nanometers. Nanopatterning graphene with such a method in one single step and without using a physical mask or resist is a very appealing approach. During the process, on top of graphene

• on the direct delivery of water molecules into the scanning electron microscope chamber. This process is called focused electron-beam-induced etching (FEBIE) and was already demonstrated for thin amorphous carbon membranes a decade ago [15]. Oxygen or water vapor can be used for etching graphene [16

• ][17] and all carbon allotropes, such as diamond [18][19] or carbon nanotubes [20]. Although the fundamentals of the FEBIE method are easily intelligible, the process includes complex surface kinetics phenomena occurring between electrons and adsorbed molecules [21]. Hence, the resolution of the method

Continuum models of focused electron beam induced processing

• Milos Toth,
• Charlene Lobo,
• Vinzenz Friedli,
• Aleksandra Szkudlarek and
• Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1518–1540, doi:10.3762/bjnano.6.157

• deposition (FEBIE and FEBID), and (iii) etch processes that proceed through multiple reaction pathways and generate a number of reaction products at the substrate surface. We also review and release software for Monte Carlo modeling of the precursor gas flux which is needed as an input parameter for

• beam induced etching (FEBIE), deposition (FEBID) [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] and surface functionalization [17] techniques. They are typically used to simulate growth rates and nanostructure geometries as a function of experimental parameters, and to help elucidate the

• laws. Numerical models can account for adsorbate diffusion and enable modeling of processes such as simultaneous FEBIE and FEBID performed using a mixture of precursor gases. Here we provide software that can be used to simulate a wide range of processes reported in the FEBIP literature, and review the

Focused electron beam induced deposition: A perspective

• Michael Huth,
• Fabrizio Porrati,
• Christian Schwalb,
• Marcel Winhold,
• Roland Sachser,
• Maja Dukic,
• Jonathan Adams and
• Georg Fantner

Beilstein J. Nanotechnol. 2012, 3, 597–619, doi:10.3762/bjnano.3.70

• , with the extension of focused electron beam induced etching (FEBIE), is now the de facto standard in mask repair for the 193 nm node [3]. It also holds great promise for circuit editing. Several reviews have been published in recent years [4][5] discussing various aspects of FEBID, or focused electron

• Toth in order to describe simultaneous FEBID and focused electron beam induced etching (FEBIE) [25]. Etching can intentionally be induced by supplying a reactive precursor, such as XeF2. Bernau et al. adapted this model to describe the deposition process in the presence of a functional precursor and a